公开(公告)号：US12184826B2

公开(公告)日：2024-12-31

申请号：US18070347

申请日：2022-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehong Lee

IPC: H04N13/194 ,  H04N13/156 ,  H04N13/161 ,  H04N19/117

Abstract: An example method, performed by an edge data network, of transmitting image content, includes obtaining azimuth information and focal position information from an electronic device connected to the edge data network, and generating a filtered first partial image by performing filtering on a first partial image corresponding to the azimuth information by using one filter determined based on the focal position information.

公开(公告)号：US20230411353A1

公开(公告)日：2023-12-21

申请号：US17969402

申请日：2022-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghak Hong ,  Wookhyun Kwon ,  Jaehong Lee

IPC: H01L25/065 ,  H01L23/528 ,  H01L27/02 ,  H01L27/06

CPC classification number: H01L25/0657 ,  H01L23/5286 ,  H01L27/0259 ,  H01L27/0688

Abstract: A (3D) stacked field effect transistors (SFETs) device includes a first transistor structure including a first source/drain (S/D) region and a second S/D region, the second S/D region including a first side and a second side facing opposite to the first side, and a second transistor structure including a third S/D region and a fourth S/D region, the fourth S/D region including a first side and a second side facing opposite to the first side. The first transistor structure and the second transistor structure are merged such that the second side of the second S/D region is merged with the first side of the fourth S/D region.

公开(公告)号：US20240387555A1

公开(公告)日：2024-11-21

申请号：US18239586

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehong Lee ,  Myung Yang ,  Kang-ill Seo

IPC: H01L27/12 ,  G01R27/14 ,  G01R31/66 ,  H01L23/522 ,  H01L23/528

Abstract: Provided is a semiconductor device which includes: a 1st source/drain region; a 2nd source/drain region with a 2nd contact plug thereon; a 3rd source/drain region; a 2nd metal line on the 2nd contact plug with a 2nd via therebetween; a 1st additional metal line on the 2nd contact plug with a 1st additional via therebetween, wherein the 2nd source/drain region is disposed between and connected to the 1st source/drain region and the 3rd source/drain region, and wherein the 2nd metal line and the 1st additional metal line are spaced apart from each other on the 2nd contact plug by a 1st predetermined distance in a 2nd horizontal direction.

公开(公告)号：US12087669B1

公开(公告)日：2024-09-10

申请号：US18543111

申请日：2023-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehong Lee ,  Sooyoung Park ,  Wonhyuk Hong ,  Kang-Ill Seo

IPC: H01L21/00 ,  H01L21/8238 ,  H01L23/48 ,  H01L27/07 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0727 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: Integrated circuit devices and methods of forming the same. As an example, an integrated circuit device may include a substrate; a first transistor structure on the substrate; a second transistor structure stacked in a vertical direction on the first transistor structure; an isolation layer between the first transistor structure and the second transistor structure in the vertical direction; and a diode structure on the substrate and adjacent to the first transistor structure in a horizontal direction. The diode structure may be part of a discharging path between a gate electrode of the second transistor structure and the substrate. The discharging path may extend through the isolation layer.

公开(公告)号：US12211837B1

公开(公告)日：2025-01-28

申请号：US18615573

申请日：2024-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunghoon Jung ,  Jaehong Lee ,  Seungchan Yun ,  Kang-ill Seo

IPC: H01L21/00 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device which may include: a channel structure; a gate structure on the channel structure; and a gate contact structure on the gate structure, the gate contact structure configured to receive a gate input signal, wherein the gate contact structure is a portion of the gate structure itself, and no connection surface, interface or boundary is formed between the gate contact structure and the gate structure.

公开(公告)号：US12058392B2

公开(公告)日：2024-08-06

申请号：US17603134

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boyoung Lee ,  Koanmo Kim ,  Eunji Kim ,  Jiwon Kim ,  Jaehong Lee

IPC: H04N21/2343 ,  H04N21/218 ,  H04N21/81

CPC classification number: H04N21/234345 ,  H04N21/21805 ,  H04N21/816

Abstract: A method of transmitting video content by using an edge computing service (e.g., a multi-access edge computing (MEC) service) is provided. The method includes obtaining sensor information including orientation information and pupil position information from an electronic device connected to the edge data network, obtaining a first partial image including a user field-of-view image and an extra field-of-view image, the user field-of-view image corresponding to the orientation information, and the extra field-of-view image corresponding to the pupil position information, generating a first frame by encoding the first partial image, and transmitting the generated first frame to the electronic device.

公开(公告)号：US20230361112A1

公开(公告)日：2023-11-09

申请号：US17936127

申请日：2022-09-28

Applicant: Samsung Electronics Co.; Ltd.

Inventor： BYOUNGHAK HONG ,  Gunho Jo ,  Sooyoung Park ,  Hyoeun Park ,  WookHyun Kwon ,  Jaehong Lee ,  Kang-Ill Seo

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/735 ,  H01L29/861

CPC classification number: H01L27/067 ,  H01L29/0673 ,  H01L29/735 ,  H01L29/8613

Abstract: Integrated circuit devices including a bipolar junction transistor (BJT) and/or a P-N junction diode are provided. The integrated circuit devices may include a first stack including first and second semiconductor regions that are spaced apart from each other in a horizontal direction and have a first conductivity type and a plurality of nano-semiconductor layers that are stacked in a vertical direction and are between the first and second semiconductor regions. The plurality of nano-semiconductor layers each have a second conductivity type, and the first semiconductor region may include a side surface facing the plurality of nano-semiconductor layers. The integrated circuit device may also include a vertical semiconductor layer having the second conductivity type and a conductive contact that contacts the plurality of nano-semiconductor layers. The vertical semiconductor layer may contact the side surface of the first semiconductor region and the plurality of nano-semiconductor layers.

公开(公告)号：US20240363633A1

公开(公告)日：2024-10-31

申请号：US18470684

申请日：2023-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： MYUNG YANG ,  Seungchan YUN ,  Sooyoung Park ,  Jaehong Lee ,  KANG-ILL SEO

IPC: H01L27/092 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L27/0922 ,  H01L21/8221 ,  H01L21/823807 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  H03K17/687

Abstract: Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor on a substrate. The transistor may include: a pair of thin semiconductor layers spaced apart from each other; a channel region between the pair of thin semiconductor layers; a gate electrode on the pair of thin semiconductor layers and the channel region; and a gate insulator separating the gate electrode from both the pair of thin semiconductor layers and the channel region. A side surface of the channel region may be recessed with respect to side surfaces of the pair of thin semiconductor layers and may define a recess between the pair of thin semiconductor layers. A portion of the gate insulator and/or a portion of the gate electrode may be in the recess.

公开(公告)号：US20230420459A1

公开(公告)日：2023-12-28

申请号：US18056181

申请日：2022-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghak Hong ,  Sooyoung Park ,  Jaehong Lee ,  Kang-ill Seo ,  WookHyun Kwon

IPC: H01L27/092 ,  H01L27/06 ,  H01L21/768

CPC classification number: H01L27/0922 ,  H01L27/0688 ,  H01L21/768

Abstract: Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a substrate and a transistor stack on the substrate. The transistor stack comprises a first transistor and a second transistor stacked in a first direction. The first transistor comprises first and second source/drain regions and a first channel region between the first and second source/drain regions, and the first source/drain region comprises a first metal layer. The second transistor comprises third and fourth source/drain regions and a second channel region between the third and fourth source/drain regions, and the first and third source/drain regions overlap each other in the first direction. The transistor stack further comprises a metal interconnector contacting the third source/drain region and the first metal layer of the first source/drain region material.

公开(公告)号：US11736792B2

公开(公告)日：2023-08-22

申请号：US16954409

申请日：2018-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehong Lee

IPC: H04N23/63 ,  G06F1/16 ,  G06F3/041

CPC classification number: H04N23/632 ,  G06F1/1605 ,  G06F3/0412 ,  G06F3/0416 ,  G06F1/1626

Abstract: An electronic device according to various embodiments comprises: a first camera; a second camera; a processor that is electrically connected to the first camera and the second camera; a touch screen that is electrically connected to the processor; and a memory that is electrically connected to the processor, wherein the processor may be configured to obtain an initiation command for capturing a first video, to display a plurality of first image frames that are obtained by the first camera onto the touch screen in response to the initiation command for capturing the first video being obtained, to store the first video based on the plurality of first image frames in the memory, to obtain, while capturing the first video, an initiation command for capturing second video with respect to a first object that is included in one or more image frames of the plurality of first image frames through the touch screen, and to store, while capturing the first video, the second video based on a plurality of second image frames that include a second object corresponding to the first object obtained using the second camera.