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公开(公告)号：US07854962B2
公开(公告)日：2010-12-21
申请号：US12320197
申请日：2009-01-21
IPC分类号： C23C16/448
CPC分类号： H01L21/67017 , C23C16/4481 , Y10T137/0324
摘要： Disclosed herein is a processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss. The processing system has a processing apparatus including a gas injection injector for injecting a specific material gas into a processing vessel in order to provide specific processing to an object to be processed W, the material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system for supplying the specific material gas to the gas injector, the gas injector is a shower head portion and the gas supply system provides: a gas passage extending upwardly from the showerhead portion; a material reservoir tank attached to the upper-end portion of the gas passage for containing the metallic compound material therein; and an open/close valve for opening/closing the gas passage.
摘要翻译： 这里公开了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的材料气体提供到处理装置中。 处理系统具有处理装置，该处理装置包括用于将特定材料气体注入到处理容器中的气体注入喷射器，以便对被加工物W进行特定处理，所述原料气体由低蒸气的金属化合物M 压力; 以及用于将特定材料气体供给到气体喷射器的气体供给系统，气体喷射器是淋浴头部分，气体供应系统提供：从喷头部分向上延伸的气体通道; 附着在气体通道的上端部分的材料储存罐，用于在其中容纳金属化合物材料; 以及用于打开/关闭气体通道的打开/关闭阀。
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公开(公告)号：US20070163713A1
公开(公告)日：2007-07-19
申请号：US10525207
申请日：2003-08-25
IPC分类号： C23F1/00
CPC分类号： H01L21/67017 , C23C16/4481 , Y10T137/0324
摘要： A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided. In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage.
摘要翻译： 提供了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的原料气体提供到处理设备中。 一种处理系统，包括：处理装置，包括用于将特定材料气体注入处理容器26中的气体注入装置42，以便对被处理物体W进行特定处理，所述原料气体由金属化合物材料 M蒸汽压低; 以及用于向所述气体注入装置供应所述特定材料气体的气体供应系统24，所述气体注入装置是淋浴喷头部分，所述气体供应系统提供：从所述喷头部分向上延伸的气体通道56; 附着在所述气体通道的上端部分的材料储存罐58，用于在其中容纳所述金属化合物材料; 以及用于打开/关闭所述气体通道的打开/关闭阀60。
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公开(公告)号：US20050003600A1
公开(公告)日：2005-01-06
申请号：US10485299
申请日：2002-08-01
IPC分类号： C23C16/455 , C23C16/14 , C23C16/44 , H01L21/285 , H01L21/768 , H01L21/8238
CPC分类号： C23C16/4557 , C23C16/14 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/45521 , C23C16/45523 , C23C16/45565 , C23C16/45572 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing.
摘要翻译： 气体处理装置1包括：处理容器2，用于在使用处理气体的同时对晶片W进行处理;安装台5，布置在处理容器2中以安装晶片W;喷淋头22，其对应于晶片W布置 在安装台5上将处理气体排出到处理容器2和用于排出处理容器2内部的排气装置132.喷淋头22具有与安装在安装台上的晶片W相对应布置的第一排气孔46 5和第二气体排出孔47独立地布置在第一气体排出孔46周围，以将处理气体排出到晶片W的周边部分。因此，通过向基板供给均匀的气体，可以进行均匀的气体处理 。
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公开(公告)号：US20090151639A1
公开(公告)日：2009-06-18
申请号：US12314326
申请日：2008-12-08
IPC分类号： C23C16/455
CPC分类号： C23C16/4557 , C23C16/14 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/45521 , C23C16/45523 , C23C16/45565 , C23C16/45572 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing.
摘要翻译： 气体处理装置1包括：处理容器2，用于在使用处理气体的同时对晶片W进行处理;安装台5，布置在处理容器2中以安装晶片W;喷淋头22，其对应于晶片W布置 在安装台5上将处理气体排出到处理容器2和用于排出处理容器2内部的排气装置132.喷淋头22具有与安装在安装台上的晶片W相对应布置的第一排气孔46 5和第二气体排出孔47独立地布置在第一气体排出孔46周围，以将处理气体排出到晶片W的周边部分。因此，通过向基板供给均匀的气体，可以进行均匀的气体处理 。
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公开(公告)号：US20090133755A1
公开(公告)日：2009-05-28
申请号：US12320197
申请日：2009-01-21
IPC分类号： C23C16/448 , G05D7/06
CPC分类号： H01L21/67017 , C23C16/4481 , Y10T137/0324
摘要： A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided.In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage.
摘要翻译： 提供了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的原料气体提供到处理设备中。 一种处理系统，包括：处理装置，包括用于将特定材料气体注入处理容器26中的气体注入装置42，以便对被处理物体W进行特定处理，所述原料气体由金属化合物材料 M蒸汽压低; 以及用于向所述气体注入装置供应所述特定材料气体的气体供应系统24，所述气体注入装置是淋浴喷头部分，所述气体供应系统提供：从所述喷头部分向上延伸的气体通道56; 附着在所述气体通道的上端部分的材料储存罐58，用于在其中容纳所述金属化合物材料; 以及用于打开/关闭所述气体通道的打开/关闭阀60。
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6.发明申请Processing gas supply mechanism, film forming apparatus and method, and computer storage medium storing program for controlling same 审中-公开处理气体供给机构，成膜装置和方法以及用于控制其的计算机存储介质存储程序公开(公告)号：US20060086319A1
公开(公告)日：2006-04-27
申请号：US11297394
申请日：2005-12-09
申请人： Shigeru Kasai , Norihiko Yamamoto
发明人： Shigeru Kasai , Norihiko Yamamoto
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/16 , C23C16/4557
摘要： A processing gas supply mechanism installed on a processing chamber of a film forming apparatus for supplying a processing gas containing a metal organic compound onto a substrate to be processed includes a processing gas inlet opening for introducing the processing gas, a diffusion space for diffusing the processing gas introduced from the processing gas inlet opening, a processing gas supply mechanism main body for forming the processing gas diffusion space, and one or more processing gas supply holes for supplying the processing gas from the diffusion space to a processing space on the substrate in the processing chamber. Further, the processing gas supply holes are shaped to have a Peclet number of 0.5 to 2.5 when the processing gas passes therethrough.
摘要翻译： 一种安装在用于将含有金属有机化合物的处理气体供给到待处理的基板上的成膜装置的处理室中的处理气体供给机构包括：用于引入处理气体的处理气体入口，用于使处理气体扩散的扩散空间 从处理气体导入口导入的气体，用于形成处理气体扩散空间的处理气体供给机构主体，以及用于将处理气体从扩散空间供给到基板上的处理空间的一个或多个处理气体供给孔 处理室。 此外，当处理气体通过时，处理气体供给孔被成形为具有0.5至2.5的佩佩克数。
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公开(公告)号：US09543123B2
公开(公告)日：2017-01-10
申请号：US13435552
申请日：2012-03-30
申请人： Taro Ikeda , Tomohito Komatsu , Shigeru Kasai
发明人： Taro Ikeda , Tomohito Komatsu , Shigeru Kasai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/455 , H05H1/46 , C23C16/511
CPC分类号： H01J37/3222 , C23C16/45565 , C23C16/511 , H01J37/32211 , H01J37/32229 , H01J37/3244 , H01J37/32449 , H05H1/46 , H05H2001/463
摘要： A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.
摘要翻译： 等离子体发生天线和等离子体处理装置可以有效地提供气体和电磁波。 等离子体处理装置10包括其中执行等离子体处理的处理室100; 构造成透射电磁波的波长缩短板480; 以及等离子体产生天线200，其具有与波长缩短板480相邻设置的淋浴喷头210.喷头210由导体制成，并具有多个气孔215和多个槽220，电磁 波通。 槽220设置在与气孔215隔开的位置处。
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公开(公告)号：US20120328273A1
公开(公告)日：2012-12-27
申请号：US13524023
申请日：2012-06-15
申请人： Hisashi KAWANO , Ryouichi Uemura , Kousuke Yoshihara , Shigeru Kasai , Keiji Tanouchi , Makoto Muramatsu , Mitsuaki Iwashita , Masatake Yoneda , Kazuhiro Ooya
发明人： Hisashi KAWANO , Ryouichi Uemura , Kousuke Yoshihara , Shigeru Kasai , Keiji Tanouchi , Makoto Muramatsu , Mitsuaki Iwashita , Masatake Yoneda , Kazuhiro Ooya
IPC分类号： H05B6/00
CPC分类号： H01L21/67115 , H05B3/0033
摘要： Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.
摘要翻译： 公开了一种可以获得高产量并减少热处理装置的占用面积的热处理装置和方法。 通过照射与晶片的吸收波长相对应的红外光的LED模块对晶片进行加热，因此可以快速加热晶片。 由于将LED用作热源并且LED的温度升高很小，因此可以在与加热处理区域相同的处理区域中进行加热处理之后的冷却处理。 结果，可以减少热处理装置的安装面积。 由于可以节省在加热处理区域和冷却处理区域之间移动的时间，因此可以缩短包括加热处理和随后的冷却处理的一系列处理所需的时间，从而提高生产量。
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9.发明申请BREAKDOWN PREDICTION DEVICE, BREAKDOWN PREDICTION METHOD, AND BREAKDOWN PREDICTION PROGRAM 有权预测预测设备，预测预测方法和预测预测程序公开(公告)号：US20120287526A1
公开(公告)日：2012-11-15
申请号：US13574141
申请日：2011-01-20
申请人： Shigeru Kasai , Yasuhiro Sasaki , Hiroshi Sakai
发明人： Shigeru Kasai , Yasuhiro Sasaki , Hiroshi Sakai
IPC分类号： G11B27/36
CPC分类号： G11B20/10009 , G11B19/048 , G11B20/10027 , G11B20/10314 , G11B20/1816 , G11B27/36 , G11B2220/2516
摘要： A breakdown prediction device of the present invention includes: a vibration measurement unit that measures vibrations generated from a device being monitored; and a signal processing unit that performs breakdown prediction when a specific vibration is measured at the vibration measurement unit, a maximum vibration amplitude value of the vibration exceeding an upper limit vibration amplitude threshold, and a vibration amplitude value thereof being below a lower limit vibration amplitude threshold at a point in time when a specified time is reached from a point in time when the vibration exceeds the upper limit vibration amplitude threshold.
摘要翻译： 本发明的故障预测装置包括：振动测量单元，其测量从被监视的设备产生的振动; 以及信号处理单元，其在所述振动测量单元处测量特定振动时执行击穿预测，所述振动的最大振动振幅值超过上限振幅阈值，并且其振动振幅值低于下限振幅 在振动超过上限振幅阈值的时间点达到指定时间的时间点的阈值。
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公开(公告)号：US20120247390A1
公开(公告)日：2012-10-04
申请号：US13496794
申请日：2010-08-30
IPC分类号： C23C16/50 , C23C16/505 , C23C16/511
CPC分类号： C23C16/4412 , C23C16/452 , C23C16/45502 , C23C16/45574 , C23C16/509 , H01J37/32082 , H01J37/32431 , H01J37/3244 , H01J37/32568 , H01J37/32633
摘要： Disclosed is a film formation apparatus (1a) that forms a thin film upon a substrate (S), wherein partitions (41) separate the space above the substrate (S) into a plasma generation space (401) and an exhaust space (402) and extend downward from the ceiling of the processing container (10) to form an opening between the substrate (S) and the bottom end of the partitions, in which gas flows from the plasma generation space (401) to the exhaust space (402). An activating mechanism (42, 43) generates plasma by activating a first reactant gas that has been supplied to the plasma generation space (401). A second reactant gas supply section (411, 412) supplies a second reactant gas to the bottom of the plasma generation space (401), and an evacuation opening (23) evacuates the exhaust space (402) from a position that is higher than the bottom end of the partitions (41).
摘要翻译： 公开了一种在基板（S）上形成薄膜的成膜装置（1a），其中隔板（41）将基板（S）上方的空间分离成等离子体产生空间（401）和排气空间（402） 并且从处理容器（10）的天花板向下延伸，以形成基板（S）和分隔壁的底端之间的开口，其中气体从等离子体产生空间（401）流到排气空间（402） 。 激活机构（42,43）通过激活已经供应到等离子体产生空间（401）的第一反应气体产生等离子体。 第二反应气体供给部（411,412）将第二反应气体供给到等离子体产生空间（401）的底部，排气口（23）将排气空间（402）从高于 分区（41）的底端。
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