摘要:
In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (μm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
摘要:
In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (&mgr;m) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
摘要:
In a display device (70, 70A, 80-80G, 90-90F) having a display window (73, 81, 93), a magnetic loss layer or layer (75, 75A, 88-88C, 97-97C) is formed on at least a part of a principal surface of the display window. The magnetic loss layer may be a granular magnetic thin layer which is, for example, made of a magnetic substance of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O. The magnetic loss layer may be formed in any one selected from mat, lattice, stripe, and speck fashions. The magnetic loss layer may be formed in a mesh fashion.
摘要:
An EMI countermeasure component is provided relative to an active element, which does not deteriorate a circuit function of the active element, but has a sufficient shielding effect against permeation of electromagnetic waves radiated to the exterior, and further suppresses a malfunction or the like due to mutual interferences between peripheral components or an electromagnetic induction to a signal line. The EMI countermeasure component is made of a composite magnetic body including soft magnetic powder having oxide films on the surfaces thereof and an organic binding agent, and extinguishes undesired high frequency electromagnetic radiation as heat due to its complex permeability.
摘要:
For improving a noise characteristic of a printed circuit board excellent in noise characteristic, a magnetic prepreg formed by impregnating a magnetic paint composed of soft magnetic powder and thermosetting resin into a glass cloth is used as a prepreg constituting the printed circuit board. It is preferable that the soft magnetic powder is metal powder being essentially flat. Further, it is preferable that a main component of the thermosetting resin is epoxy resin.
摘要:
A thin electromagnetic interference suppressing body effective for electromagnetic interference suppression at a microwave band. As a material of the electromagnetic interference suppressing body, there is provided a composite magnetic body formed by bonding powder made of a semi-hard magnetic material by an organic bonding agent and having a high magnetic loss at the microwave band. As the semi-hard magnetic material, a metallic magnetic body, such as Fe--Co--Mo alloy, Co--Fe--Nb alloy or Fe--Co--V alloy, or an oxide magnetic body, such as .gamma.-Fe.sub.2 O.sub.3 or Co--Ti substituted Ba ferrite, can be used. Further, as an example of the organic bonding agent, polyurethane resin can be cited.
摘要:
A dual-band nonreversible circuit device comprises a first circulator element (91) and a second circulator element (92) accommodated in a single housing (50, 50', 60) and operable around a first center frequency (f.sub.A) and a second center frequency (f.sub.B), respectively. The first circulator element (91) is formed by a combination of a first permanent magnet (31), a first ferrite plate (21) with a first center conductor (11), and a ground conductor plate (40) successively stacked on a lower magnetic yoke (50). Likewise, the second circulator element (92) is formed by a combination of the ground conductor plate (40), a second ferrite plate (22) with a second center conductor (12), and a second permanent magnet (32) successively stacked and covered by an upper magnetic yoke (60). Alternatively, a first circulator element (91') is formed by a combination of a first ground conductor plate (41), the first ferrite plate (21) with the first center conductor (11), and a permanent magnet (30) while the second circulator element (92') is formed by a combination of a second ground conductor plate (42), the second ferrite plate (22) with the second center conductor (12), and the permanent magnet (30).
摘要:
In an optical fiber cable, for effectively suppressing undesired radiant noise propagating in a reinforcing wire or generated from the reinforcing wire without providing an electromagnetic shielding member apart from the optical fiber cable, a buffer layer and an outer jacket of an LAP sheath covering the reinforcing wire being a tension member forming the optical fiber cable are constituted by composite magnetic bodies, respectively, composed of soft magnetic powder and organic binding agents. It is preferable that the soft magnetic powder is powder being essentially flat.
摘要:
An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.
摘要:
An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer.The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.