EMI preventive part and active device with the same
    4.
    发明授权
    EMI preventive part and active device with the same 失效
    EMI防护部件和有源器件相同

    公开(公告)号:US06310285B1

    公开(公告)日:2001-10-30

    申请号:US09065030

    申请日:1998-04-22

    IPC分类号: H05K900

    摘要: An EMI countermeasure component is provided relative to an active element, which does not deteriorate a circuit function of the active element, but has a sufficient shielding effect against permeation of electromagnetic waves radiated to the exterior, and further suppresses a malfunction or the like due to mutual interferences between peripheral components or an electromagnetic induction to a signal line. The EMI countermeasure component is made of a composite magnetic body including soft magnetic powder having oxide films on the surfaces thereof and an organic binding agent, and extinguishes undesired high frequency electromagnetic radiation as heat due to its complex permeability.

    摘要翻译: 相对于有源元件提供EMI对抗部件,其不会使有源元件的电路功能劣化,而是对辐射到外部的电磁波的透过具有足够的屏蔽效果,并且进一步抑制由于 外围组件之间的相互干扰或对信号线的电磁感应。 EMI对抗部件由包括其表面上具有氧化物膜的软磁性粉末和有机粘合剂的复合磁性体制成,并且由于其复合渗透性而将不需要的高频电磁辐射作为热量熄灭。

    Compound magnetic material and electromagnetic interference suppressor
    6.
    发明授权
    Compound magnetic material and electromagnetic interference suppressor 失效
    复合磁性材料和电磁干扰抑制器

    公开(公告)号:US6051156A

    公开(公告)日:2000-04-18

    申请号:US77442

    申请日:1998-05-28

    摘要: A thin electromagnetic interference suppressing body effective for electromagnetic interference suppression at a microwave band. As a material of the electromagnetic interference suppressing body, there is provided a composite magnetic body formed by bonding powder made of a semi-hard magnetic material by an organic bonding agent and having a high magnetic loss at the microwave band. As the semi-hard magnetic material, a metallic magnetic body, such as Fe--Co--Mo alloy, Co--Fe--Nb alloy or Fe--Co--V alloy, or an oxide magnetic body, such as .gamma.-Fe.sub.2 O.sub.3 or Co--Ti substituted Ba ferrite, can be used. Further, as an example of the organic bonding agent, polyurethane resin can be cited.

    摘要翻译: PCT No.PCT / JP97 / 03396 371日期:1998年5月28日 102(e)日期1998年5月28日PCT 1997年9月24日PCT公布。 公开号WO98 / 14962 日期:1998年4月9日一种薄膜电磁干扰抑制体,对于微波波段的电磁干扰抑制有效。 作为电磁干扰抑制体的材料,提供了一种复合磁体,该复合磁体通过有机粘合剂将由半硬磁性材料制成的粉末粘合在微波带上而具有高的磁损耗而形成。 作为半硬磁性材料,可以使用诸如Fe-Co-Mo合金,Co-Fe-Nb合金或Fe-Co-V合金的金属磁性体,或诸如γ-Fe 2 O 3或Co- 可以使用Ti取代的Ba铁氧体。 此外,作为有机粘合剂的实例,可以列举聚氨酯树脂。

    Dual-band nonreversible circuit device comprising two nonreversible
circuit elements contained in a single housing to be operable in
different frequency bands
    7.
    发明授权
    Dual-band nonreversible circuit device comprising two nonreversible circuit elements contained in a single housing to be operable in different frequency bands 失效
    双频带不可逆电路装置包括两个不可逆电路元件,其包含在单个壳体中以在不同频带中操作

    公开(公告)号:US5898346A

    公开(公告)日:1999-04-27

    申请号:US756035

    申请日:1996-11-26

    CPC分类号: H01P1/387

    摘要: A dual-band nonreversible circuit device comprises a first circulator element (91) and a second circulator element (92) accommodated in a single housing (50, 50', 60) and operable around a first center frequency (f.sub.A) and a second center frequency (f.sub.B), respectively. The first circulator element (91) is formed by a combination of a first permanent magnet (31), a first ferrite plate (21) with a first center conductor (11), and a ground conductor plate (40) successively stacked on a lower magnetic yoke (50). Likewise, the second circulator element (92) is formed by a combination of the ground conductor plate (40), a second ferrite plate (22) with a second center conductor (12), and a second permanent magnet (32) successively stacked and covered by an upper magnetic yoke (60). Alternatively, a first circulator element (91') is formed by a combination of a first ground conductor plate (41), the first ferrite plate (21) with the first center conductor (11), and a permanent magnet (30) while the second circulator element (92') is formed by a combination of a second ground conductor plate (42), the second ferrite plate (22) with the second center conductor (12), and the permanent magnet (30).

    摘要翻译: 双频带不可逆电路装置包括容纳在单个壳体(50,50',60)中的第一循环器元件(91)和第二循环器元件(92),并且围绕第一中心频率(fA)和第二中心 频率(fB)。 第一循环器元件(91)由第一永久磁铁(31),第一铁氧体板(21)与第一中心导体(11)的组合和接地导体板(40)组合而成, 磁轭(50)。 类似地,第二循环器元件(92)由接地导体板(40),具有第二中心导体(12)的第二铁氧体板(22)和依次层叠的第二永磁体(32)的组合形成, 被上磁轭(60)覆盖。 或者,第一循环器元件(91')由第一接地导体板(41),第一铁氧体板(21)与第一中心导体(11)和永磁体(30)的组合形成,同时 第二循环器元件(92')由第二接地导体板(42),第二铁氧体板(22)与第二中心导体(12)和永磁体(30)的组合形成。

    Optical fiber cable
    8.
    发明授权
    Optical fiber cable 失效
    光纤电缆

    公开(公告)号:US6011887A

    公开(公告)日:2000-01-04

    申请号:US68064

    申请日:1998-04-28

    IPC分类号: G02B6/44 H01B11/22

    CPC分类号: G02B6/4422 G02B6/443

    摘要: In an optical fiber cable, for effectively suppressing undesired radiant noise propagating in a reinforcing wire or generated from the reinforcing wire without providing an electromagnetic shielding member apart from the optical fiber cable, a buffer layer and an outer jacket of an LAP sheath covering the reinforcing wire being a tension member forming the optical fiber cable are constituted by composite magnetic bodies, respectively, composed of soft magnetic powder and organic binding agents. It is preferable that the soft magnetic powder is powder being essentially flat.

    摘要翻译: PCT No.PCT / JP97 / 03003 Sec。 371日期:1998年4月28日 102(e)1998年4月28日PCT PCT 1997年8月28日PCT公布。 公开号WO98 / 09189 日期1998年5月3日在光纤电缆中,为了有效地抑制在加强线中传播或从加强线产生的不期望的辐射噪声,而不提供远离光纤电缆的电磁屏蔽构件,LAP的缓冲层和外护套 覆盖作为形成光缆的张力构件的加强丝的护套由分别由软磁性粉末和有机粘合剂构成的复合磁体构成。 软磁性粉末优选基本上为平坦的粉末。

    Gallium nitride-based compound semiconductor light-emitting device
    9.
    发明授权
    Gallium nitride-based compound semiconductor light-emitting device 有权
    氮化镓系化合物半导体发光元件

    公开(公告)号:US07759690B2

    公开(公告)日:2010-07-20

    申请号:US11994549

    申请日:2006-06-30

    摘要: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.

    摘要翻译: 本发明的目的是提供一种具有反射性正极的氮化镓系化合物半导体发光元件,其具有优异的光提取效率。 本发明的氮化镓系化合物半导体发光元件在基板上具有含有n型半导体层,发光层和p型半导体层的氮化镓系化合物半导体层结构, 设置在p型半导体层上的电极是包括透明材料层和形成在透明材料层上的反射金属层的反射性正极。

    GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
    10.
    发明申请
    GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    基于氮化镓的化合物半导体发光器件

    公开(公告)号:US20090224282A1

    公开(公告)日:2009-09-10

    申请号:US12093758

    申请日:2006-11-14

    申请人: Koji Kamei

    发明人: Koji Kamei

    IPC分类号: H01L33/00

    CPC分类号: H01L33/42 H01L33/32 H01L33/40

    摘要: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer.The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.

    摘要翻译: 本发明的目的是提供一种具有低驱动电压和高发光输出的氮化镓基化合物半导体发光器件,其具有包括与p型直接接触的透明导电层的正极 半导体层。 本发明的氮化镓系化合物半导体发光元件包括在基板上依次形成的n型半导体层,发光层和p型半导体层,其中,各层包含氮化镓系化合物半导体发光元件, 所述发光装置的负极和正极分别设置在所述n型半导体层和所述p型半导体层上,所述正极至少部分地由透明导电膜形成 透明导电膜至少部分地与p型半导体层接触,在透明导电膜的半导体侧表面上存在含有III族金属成分的半导体金属混合层, 半导体金属混合层为0.1〜10nm。