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1.发明授权Semiconductor device with a layer including niobium, and/or tantalum overlying a contact pad or a metal layer 有权具有包括铌的层和/或覆盖在接触焊盘或金属层上的钽的半导体器件公开(公告)号：US08836120B2
公开(公告)日：2014-09-16
申请号：US13090092
申请日：2011-04-19
申请人： Khalil Hosseini , Manfred Mengel , Joachim Mahler
发明人： Khalil Hosseini , Manfred Mengel , Joachim Mahler
CPC分类号： H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/43 , H01L24/45 , H01L24/73 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05017 , H01L2224/05147 , H01L2224/05166 , H01L2224/05179 , H01L2224/05184 , H01L2224/05558 , H01L2224/05564 , H01L2224/05679 , H01L2224/05681 , H01L2224/06181 , H01L2224/29111 , H01L2224/29179 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/43826 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45664 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/4569 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48879 , H01L2224/48881 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/013 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/181 , Y10T428/2938 , H01L2924/01014 , H01L2924/01032 , H01L2924/01031 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip, a contact pad of the semiconductor chip and a first layer arranged over the contact pad. The first layer includes niobium, tantalum or an alloy including niobium and tantalum.
摘要翻译： 半导体器件包括半导体芯片，半导体芯片的接触焊盘和布置在接触焊盘上的第一层。 第一层包括铌，钽或包括铌和钽的合金。
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公开(公告)号：US09337164B2
公开(公告)日：2016-05-10
申请号：US14525855
申请日：2014-10-28
发明人： Rama I. Hegde
IPC分类号： H01L23/48 , H01L23/00 , H01L23/495 , H01L21/48
CPC分类号： H01L24/45 , H01L21/4821 , H01L21/4846 , H01L23/49548 , H01L23/49582 , H01L23/49586 , H01L24/32 , H01L24/43 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/43 , H01L2224/45147 , H01L2224/45565 , H01L2224/45573 , H01L2224/45647 , H01L2224/45666 , H01L2224/45681 , H01L2224/45687 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/04941 , H01L2924/04953 , H01L2924/013 , H01L2924/0104 , H01L2924/01072 , H01L2924/00012
摘要： A coating layer for use in copper integrated circuit interconnect and other conductive structures hinders and decreases oxide growth on surfaces of such conductive structures. The coating layer includes an amorphous copper containing layer deposited on a crystalline copper substrate, such as utilized for a lead frame and a bonding wire. Additional amorphous layers may be interposed between the amorphous copper containing layer and the copper substrate, such as an amorphous tantalum nitride layer and an amorphous titanium nitride layer.
摘要翻译： 用于铜集成电路互连和其它导电结构的涂层阻碍并减少这种导电结构表面上的氧化物生长。 涂层包括沉积在结晶铜基底上的非晶态含铜层，例如用于引线框架和接合线。 可以在非晶态含铜层和铜基板之间插入附加非晶层，例如非晶氮化钽层和无定形氮化钛层。
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公开(公告)号：US08450611B2
公开(公告)日：2013-05-28
申请号：US12607225
申请日：2009-10-28
申请人： Rainer Dohle , Frank Rudolf , Christian Wenzel
发明人： Rainer Dohle , Frank Rudolf , Christian Wenzel
IPC分类号： H01R4/62
CPC分类号： H01L24/85 , B23K35/0227 , B23K35/286 , B32B15/01 , B32B15/018 , C22C27/02 , C22C27/04 , C23C14/3407 , C23C14/562 , C23C30/00 , H01L24/43 , H01L24/45 , H01L24/745 , H01L2224/435 , H01L2224/4381 , H01L2224/4382 , H01L2224/43826 , H01L2224/43827 , H01L2224/43831 , H01L2224/43848 , H01L2224/45012 , H01L2224/45014 , H01L2224/45015 , H01L2224/45016 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4557 , H01L2224/45572 , H01L2224/45573 , H01L2224/456 , H01L2224/45624 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45681 , H01L2224/45684 , H01L2224/45686 , H01L2224/45687 , H01L2224/745 , H01L2224/85099 , H01L2224/85205 , H01L2224/85207 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/20103 , H01L2924/20104 , H01L2224/45138 , H01L2924/00015 , H01L2924/00 , H01L2224/48 , H01L2924/05432 , H01L2924/013
摘要： A connecting wire having an electrically conductive core, preferably provided by a wire or ribbon, with a coating provided on the surface of the core. The coating is composed of a nitrogen-containing tantalum alloy or tungsten alloy, and also optionally contains silicon as an additional alloy component. A manufacturing method for producing such a connecting wire involves passing a wire or ribbon core past a coating source to apply the coating.
摘要翻译： 一种连接线，其具有导电芯，优选地由线或带提供，其具有设置在芯的表面上的涂层。 该涂层由含氮钽合金或钨合金组成，并且还任选地含有作为附加合金成分的硅。 用于制造这种连接线的制造方法包括使线或带芯通过涂覆源以施加涂层。
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4.发明申请公开(公告)号：US20040188833A1
公开(公告)日：2004-09-30
申请号：US10355593
申请日：2003-01-31
发明人： Shigeyoshi Yoshida , Hiroshi Ono , Koji Kamei
IPC分类号： H01L023/34
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (nullm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
摘要翻译： 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。
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公开(公告)号：US20150214177A1
公开(公告)日：2015-07-30
申请号：US14525855
申请日：2014-10-28
发明人： Rama I. Hegde
IPC分类号： H01L23/00 , H01L21/48 , H01L23/495
CPC分类号： H01L24/45 , H01L21/4821 , H01L21/4846 , H01L23/49548 , H01L23/49582 , H01L23/49586 , H01L24/32 , H01L24/43 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/43 , H01L2224/45147 , H01L2224/45565 , H01L2224/45573 , H01L2224/45647 , H01L2224/45666 , H01L2224/45681 , H01L2224/45687 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/04941 , H01L2924/04953 , H01L2924/013 , H01L2924/0104 , H01L2924/01072 , H01L2924/00012
摘要： A coating layer for use in copper integrated circuit interconnect and other conductive structures hinders and decreases oxide growth on surfaces of such conductive structures. The coating layer includes an amorphous copper containing layer deposited on a crystalline copper substrate, such as utilized for a lead frame and a bonding wire. Additional amorphous layers may be interposed between the amorphous copper containing layer and the copper substrate, such as an amorphous tantalum nitride layer and an amorphous titanium nitride layer.
摘要翻译： 用于铜集成电路互连和其它导电结构的涂层阻碍并减少这种导电结构表面上的氧化物生长。 涂层包括沉积在结晶铜基底上的非晶态含铜层，例如用于引线框架和接合线。 可以在非晶态含铜层和铜基板之间插入附加非晶层，例如非晶氮化钽层和无定形氮化钛层。
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公开(公告)号：US20100108359A1
公开(公告)日：2010-05-06
申请号：US12607225
申请日：2009-10-28
申请人： Rainer Dohle , Frank Rudolf , Christian Wenzel
发明人： Rainer Dohle , Frank Rudolf , Christian Wenzel
CPC分类号： H01L24/85 , B23K35/0227 , B23K35/286 , B32B15/01 , B32B15/018 , C22C27/02 , C22C27/04 , C23C14/3407 , C23C14/562 , C23C30/00 , H01L24/43 , H01L24/45 , H01L24/745 , H01L2224/435 , H01L2224/4381 , H01L2224/4382 , H01L2224/43826 , H01L2224/43827 , H01L2224/43831 , H01L2224/43848 , H01L2224/45012 , H01L2224/45014 , H01L2224/45015 , H01L2224/45016 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4557 , H01L2224/45572 , H01L2224/45573 , H01L2224/456 , H01L2224/45624 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45681 , H01L2224/45684 , H01L2224/45686 , H01L2224/45687 , H01L2224/745 , H01L2224/85099 , H01L2224/85205 , H01L2224/85207 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/20103 , H01L2924/20104 , H01L2224/45138 , H01L2924/00015 , H01L2924/00 , H01L2224/48 , H01L2924/05432 , H01L2924/013
摘要： A connecting wire having an electrically conductive core—preferably provided by a wire or ribbon—with a coating provided on the surface of the core, the coating being composed of a nitrogen-containing tantalum alloy or tungsten alloy, and also optionally containing silicon as an additional alloy component. The invention further relates to a manufacturing method for such a connecting wire.
摘要翻译： 一种连接线，其具有导电芯 - 优选地由线或带提供，其具有设置在芯的表面上的涂层，该涂层由含氮钽合金或钨合金构成，并且还任选地含有硅作为 额外的合金成分。 本发明还涉及这种连接线的制造方法。
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7.发明申请公开(公告)号：US20010026016A1
公开(公告)日：2001-10-04
申请号：US09826436
申请日：2001-04-04
发明人： Shigeyoshi Yoshida , Hiroshi Ono , Koji Kamei
IPC分类号： H01L023/48 , H01L023/52 , H01L029/40
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (nullm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
摘要翻译： 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。
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公开(公告)号：US20120267784A1
公开(公告)日：2012-10-25
申请号：US13090092
申请日：2011-04-19
申请人： Khalil Hosseini , Manfred Mengel , Joachim Mahler
发明人： Khalil Hosseini , Manfred Mengel , Joachim Mahler
IPC分类号： H01L23/48 , C23C16/06 , B05D1/36 , C23C14/34 , C25D3/56 , C25D3/54 , C23C14/14 , B32B15/02 , B05D7/20 , B82Y30/00
CPC分类号： H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/43 , H01L24/45 , H01L24/73 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05017 , H01L2224/05147 , H01L2224/05166 , H01L2224/05179 , H01L2224/05184 , H01L2224/05558 , H01L2224/05564 , H01L2224/05679 , H01L2224/05681 , H01L2224/06181 , H01L2224/29111 , H01L2224/29179 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/43826 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45664 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/4569 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48879 , H01L2224/48881 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/013 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/181 , Y10T428/2938 , H01L2924/01014 , H01L2924/01032 , H01L2924/01031 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip, a contact pad of the semiconductor chip and a first layer arranged over the contact pad. The first layer includes niobium, tantalum or an alloy including niobium and tantalum.
摘要翻译： 半导体器件包括半导体芯片，半导体芯片的接触焊盘和布置在接触焊盘上的第一层。 第一层包括铌，钽或包括铌和钽的合金。
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9.发明授权公开(公告)号：US06903440B2
公开(公告)日：2005-06-07
申请号：US10355593
申请日：2003-01-31
申请人： Shigeyoshi Yoshida , Hiroshi Ono , Koji Kamei
发明人： Shigeyoshi Yoshida , Hiroshi Ono , Koji Kamei
IPC分类号： H01L21/60 , H01L23/49 , H01L23/495 , H01L23/66 , H03H1/00 , H05K1/02 , H01L27/082
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (μm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
摘要翻译： 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。
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10.发明授权公开(公告)号：US06635961B2
公开(公告)日：2003-10-21
申请号：US09826436
申请日：2001-04-04
申请人： Shigeyoshi Yoshida , Hiroshi Ono , Koji Kamei
发明人： Shigeyoshi Yoshida , Hiroshi Ono , Koji Kamei
IPC分类号： H01L2334
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (&mgr;m) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
摘要翻译： 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是薄膜磁性物质，其厚度范围为0.3〜20（μm），并且设置在各端子（19）的整个表面上，覆盖安装在安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。
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