Electron beam system
    10.
    发明授权
    Electron beam system 失效
    电子束系统

    公开(公告)号:US07157703B2

    公开(公告)日:2007-01-02

    申请号:US10651105

    申请日:2003-08-29

    Abstract: Provided is an electron beam system, in which an electron beam emitted from an electron gun is irradiated to a stencil mask, and the electron beam that has passed through the stencil mask is magnified by an electron lens and then detected by a detector having a plurality of pixels so as to form an image of the sample. Further provided is an electron beam system, in which a primary electron beam emitted from an electron gun is directed to a sample surface of a sample prepared as a subject to be inspected, and an electron image formed by a secondary electron beam emanated from the sample is magnified and detected, wherein an NA aperture is disposed in a path common to both of the primary electron beam and the secondary electron beam. An electron lens is disposed in the vicinity of a sample surface, and in this arrangement, a crossover produced by the electron gun, the electron lens and the NA aperture may be in conjugate relationships relative to each other with respect to the primary electron beam.

    Abstract translation: 提供了一种电子束系统,其中从电子枪发射的电子束照射到模板掩模,并且已经通过模板掩模的电子束被电子透镜放大,然后由具有多个 以形成样品的图像。 进一步提供了一种电子束系统,其中从电子枪发射的一次电子束被引导到作为待检查对象制备的样品的样品表面,并且由从样品发出的二次电子束形成的电子图像 被放大和检测,其中NA孔径设置在一次电子束和二次电子束共同的路径中。 电子透镜设置在样品表面附近,并且在这种布置中,由电子枪,电子透镜和NA孔径产生的交叉可以相对于一次电子束相对于彼此的共轭关系。

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