公开(公告)号：US07095045B2

公开(公告)日：2006-08-22

申请号：US10998182

申请日：2004-11-29

申请人： Shuichi Chiba ,  Masahiko Ishiguri ,  Koichi Murata ,  Eiji Watanabe ,  Michiaki Tamagawa ,  Akira Satoh ,  Yasushi Toida ,  Kazuhiro Misawa

发明人： Shuichi Chiba ,  Masahiko Ishiguri ,  Koichi Murata ,  Eiji Watanabe ,  Michiaki Tamagawa ,  Akira Satoh ,  Yasushi Toida ,  Kazuhiro Misawa

IPC分类号： H01L23/58 ,  H01L29/10

CPC分类号： H01L24/05 ,  H01L21/2885 ,  H01L22/34 ,  H01L23/562 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12044 ,  H01L2924/19043 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.

摘要翻译： 半导体器件包括衬底，形成在衬底上的焊盘电极和形成在焊盘电极上的凸起电极，其中焊盘电极具有不规则的缺陷，并且提供覆盖焊盘电极与凸块之间的不规则缺陷的图案 电极。

公开(公告)号：US20050151250A1

公开(公告)日：2005-07-14

申请号：US10998182

申请日：2004-11-29

申请人： Shuichi Chiba ,  Masahiko Ishiguri ,  Koichi Murata ,  Eiji Watanabe ,  Michiaki Tamagawa ,  Akira Satoh ,  Yasushi Toida ,  Kazuhiro Misawa

发明人： Shuichi Chiba ,  Masahiko Ishiguri ,  Koichi Murata ,  Eiji Watanabe ,  Michiaki Tamagawa ,  Akira Satoh ,  Yasushi Toida ,  Kazuhiro Misawa

IPC分类号： H01L21/288 ,  H01L21/60 ,  H01L23/00 ,  H01L23/485 ,  H01L23/544 ,  H01L29/40 ,  H01L29/78

CPC分类号： H01L24/05 ,  H01L21/2885 ,  H01L22/34 ,  H01L23/562 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12044 ,  H01L2924/19043 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.

摘要翻译： 半导体器件包括衬底，形成在衬底上的焊盘电极和形成在焊盘电极上的凸起电极，其中焊盘电极具有不规则的缺陷，并且提供覆盖焊盘电极与凸块之间的不规则缺陷的图案 电极。

公开(公告)号：US06462415B1

公开(公告)日：2002-10-08

申请号：US09594155

申请日：2000-06-15

申请人： Masahiko Ishiguri ,  Eiji Watanabe ,  Yutaka Makino ,  Koichi Murata

发明人： Masahiko Ishiguri ,  Eiji Watanabe ,  Yutaka Makino ,  Koichi Murata

IPC分类号： H01L2348

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05166

摘要： There is provided a semiconductor device which comprises electrode pads formed on an insulating film on a semiconductor substrate, an insulating cover film formed on the insulating film to have openings that expose the electrode pads, and a masking tape having a base material layer and a resist layer coated on the base material layer, and for covering an upper surface of the cover film and inner surfaces of the openings in a situation that the resist layer is directed toward a semiconductor substrate side. Accordingly, it is possible to improve a throughput in a series of steps of grinding/polishing the semiconductor substrate and forming the bump electrodes which are required to thin the substrate of the semiconductor device.

摘要翻译： 提供了一种半导体器件，其包括形成在半导体衬底上的绝缘膜上的电极焊盘，形成在绝缘膜上以具有露出电极焊盘的开口的绝缘覆盖膜，以及具有基材层和抗蚀剂 层，涂覆在基材层上，并且用于在抗蚀剂层朝向半导体衬底侧的情况下覆盖覆盖膜的上表面和开口的内表面。 因此，可以提高半导体衬底的研磨/抛光和形成半导体器件的衬底所需的凸块电极的一系列步骤中的通过量。

公开(公告)号：US07064436B2

公开(公告)日：2006-06-20

申请号：US10995081

申请日：2004-11-23

申请人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

发明人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099

摘要： A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).

摘要翻译： 半导体器件包括半导体衬底和以间距X 1布置的突出电极阵列。 每个突出电极具有高度X 3，并且形成在与布置在半导体衬底上的电极耦合的直径为X 2的阻挡金属基底上，以满足关系（X 1/2）<= X 2 <=（ 3 * X 1/4）和（X 1/2）<= X 3 <=（3 * X 1/4）。

公开(公告)号：US20060258045A1

公开(公告)日：2006-11-16

申请号：US11412127

申请日：2006-04-27

申请人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

发明人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099

摘要： A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X½)≦X2≦(3*X¼) and (X½)≦X3≦(3*X¼).

摘要翻译： 半导体器件包括半导体衬底和以间距X1布置的突出电极阵列。 每个突出电极具有高度X3，并且形成在直径为X2的阻挡金属基底上，耦合到布置在半导体衬底上的电极，以满足关系式（X 1/2）<= X2 <=（3 *X¼）和（ X½）<= X3 <=（3 *X¼）。

公开(公告)号：US20050140004A1

公开(公告)日：2005-06-30

申请号：US10995081

申请日：2004-11-23

申请人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

发明人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

IPC分类号： H01L21/60 ,  H01L21/28 ,  H01L21/768 ,  H01L23/02 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099

摘要： A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).

摘要翻译： 半导体器件包括半导体衬底和以间距X 1布置的突出电极阵列。 每个突出电极具有高度X 3，并且形成在与布置在半导体衬底上的电极耦合的直径为X 2的阻挡金属基底上，以满足关系（X 1/2）<= X 2 <=（ 3 * X 1/4）和（X 1/2）<= X 3 <=（3 * X 1/4）。

公开(公告)号：US5801439A

公开(公告)日：1998-09-01

申请号：US804270

申请日：1997-02-21

申请人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kosuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

发明人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kosuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

IPC分类号： H01L23/28 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L25/11 ,  H01L25/18 ,  H01L23/48 ,  H01L27/10

CPC分类号： H01L23/4951 ,  H01L25/105 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/1041 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/12042

摘要： A semiconductor device includes a semiconductor element, a package sealing the semiconductor element, and leads for passing signals between the semiconductor element and an external device. Each of the leads has an inner-lead part sealed within the package and connected with the semiconductor element, and an outer-lead part which extends outward from the package toward a top of the package, and is to be connected to the external device. The outer-lead part includes a first-port part at a lower side of the package, and a second-port part at an upper side of the package.

摘要翻译： 半导体器件包括半导体元件，密封半导体元件的封装以及用于在半导体元件和外部器件之间传递信号的引线。 每个引线具有密封在封装内并与半导体元件连接的内引线部分，以及从封装向外朝向封装顶部延伸并且连接到外部装置的外引线部分。 外引线部分包括在封装的下侧的第一端口部分和在封装的上侧的第二端口部分。

公开(公告)号：US5760471A

公开(公告)日：1998-06-02

申请号：US794763

申请日：1997-02-03

申请人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kousuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

发明人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kousuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

IPC分类号： H01L23/495 ,  H01L25/10 ,  H01L23/48 ,  H01L23/02 ,  H01L23/12 ,  H01L23/50

CPC分类号： H01L23/4951 ,  H01L23/49551 ,  H01L25/105 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/8547 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/1041 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12042

摘要： A semiconductor device including a semiconductor element, and leads connected with the semiconductor element. Each of the leads includes an outer lead part for being connected externally. The semiconductor device further includes a plastic package sealing the semiconductor element and the leads. In the semiconductor device, the outer lead part is exposed to the outside of a side face of the plastic package, and the plastic package is mounted on any base in a standing form by the side face contacting the base.

摘要翻译： 包括半导体元件的半导体器件和与半导体元件连接的引线。 每个引线包括用于外部连接的外引线部分。 半导体器件还包括密封半导体元件和引线的塑料封装。 在半导体器件中，外部引线部分暴露于塑料封装的侧面的外侧，塑料封装通过与底座接触的侧面以立式形式安装在任何基座上。