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    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    9.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开

    公开(公告)号：US20120040518A1

    公开(公告)日：2012-02-16

    申请号：US13284912

    申请日：2011-10-30

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/20

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Optical ovonic threshold switch
    10.
    发明授权
    Optical ovonic threshold switch 失效
    光学超声门限开关

    公开(公告)号：US08111546B2

    公开(公告)日：2012-02-07

    申请号：US12269901

    申请日：2008-11-13

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： G11C11/00

    CPC分类号： H01L45/085 ,  H01L45/1213 ,  H01L45/141 ,  Y10S977/754

    摘要： A method and device for accomplishing transformation of a switching material from a resistive state to a conductive state. The method utilizes a non-electrical source of energy to effect the switching transformation. The switching material may be a chalcogenide switching material, where the non-electrical source of energy initiates switching by liberating lone pair electrons from bound states of chalcogen atoms. The liberated lone pair electrons form a conductive filament having the characteristics of a solid state plasma to permit high current densities to pass through the switching material. The device includes a switching material with electrical contacts and may be interconnected with other elements in a circuit to regulate electrical communication therebetween.

    摘要翻译： 一种用于实现将开关材料从电阻状态转换为导通状态的方法和装置。 该方法利用非电源能量来实现开关变换。 开关材料可以是硫族化物开关材料，其中非电源能量通过从孤硫原子的结合态释放孤对电子而开始切换。 释放的孤对电子形成具有固态等离子体特性的导电丝，以允许高电流密度通过开关材料。 该装置包括具有电触点的开关材料，并且可以与电路中的其它元件互连以调节它们之间的电连通。