摘要:
Reworkable thermoset acid-cleavable acetal and ketal based epoxy oligomers can be B-staged into a tack free state. Compositions containing the epoxy oligomers are employed in a reworkable assembly such as a wafer-level underfilled microelectronic package.
摘要:
A reworkable thermoset epoxy-containing material that allows for a reworkable assembly such as a reworkable waferlevel underfilled microelectronic package. A method for using the reworkable thermoset material in the formation of a microelectronic package using this material.
摘要:
A reworkable thermoset epoxy-containing material that allows for a reworkable assembly such as a reworkable waferlevel underfilled miocroelectronic package. A method for using the reworkable thermoset material in the formation of a microelectronic package using this material.
摘要:
The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.
摘要:
The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.
摘要:
Techniques for providing electrical connections are provided. In one aspect, an electrical connecting device is provided which comprises a plurality of compressible contacts; and a downstop structure surrounding at least a portion of one or more of the contacts, limiting compression of the contacts, and being configured to limit interaction between the contacts. The electrical connecting device may be further configured to have the plurality of compressible contacts have a first coefficient of thermal expansion and the downstop structure have a second coefficient of thermal expansion, the first coefficient of thermal expansion being substantially similar to the second coefficient of thermal expansion.
摘要:
The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.
摘要:
The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.
摘要:
A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.
摘要:
A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a plurality of outwardly extending bump each defining a cavity. Symmetrically mating the first and second metal sheets in opposing relation to each other to form upper and lower bumps each defining an enclosure therebetween wherein the mated first and second sheets form a contact structure. Coating the contact structure with an insulating material, and fabricating helix shaped contacts from upper and lower bumps. The helix shaped contacts having first and second portions being in minor image relationship to each other.