公开(公告)号：US20060177568A1

公开(公告)日：2006-08-10

申请号：US11049846

申请日：2005-02-04

申请人： Gareth Hougham ,  Leena Buchwalter ,  Stephen Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey Gelorme ,  Kathleen Hinge ,  Anurag Jain ,  Sung Kang ,  John Knickerbocker

发明人： Gareth Hougham ,  Leena Buchwalter ,  Stephen Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey Gelorme ,  Kathleen Hinge ,  Anurag Jain ,  Sung Kang ,  John Knickerbocker

IPC分类号： B05D5/12 ,  H05K3/00 ,  B05C1/00

CPC分类号： H05K3/4053 ,  B05D1/002 ,  H01L21/486 ,  H01L21/76898 ,  H05K2201/09509 ,  H05K2203/1554

摘要： The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

摘要翻译： 本公开一般涉及半导体，集成电路，特别是但不限于，用于填充高纵横比通孔和沟槽的离心方法，其具有粉末，糊料，材料悬浮液，用作导电，结构 支撑或电子部件的保护构件。

公开(公告)号：US07815968B2

公开(公告)日：2010-10-19

申请号：US12247894

申请日：2008-10-08

申请人： Gareth Hougham ,  Leena Paivikki Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelmore ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

发明人： Gareth Hougham ,  Leena Paivikki Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelmore ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

IPC分类号： B05D3/12

CPC分类号： H05K3/4053 ,  B05D1/002 ,  H01L21/486 ,  H01L21/76898 ,  H05K2201/09509 ,  H05K2203/1554

摘要： The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

摘要翻译： 本公开一般涉及半导体，集成电路，特别是但不限于，用于填充高纵横比通孔和沟槽的离心方法，其具有粉末，糊料，材料悬浮液，用作导电，结构 支撑或电子部件的保护构件。

公开(公告)号：US20090032962A1

公开(公告)日：2009-02-05

申请号：US12247894

申请日：2008-10-08

申请人： Gareth Hougham ,  Leena P. Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelorme ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

发明人： Gareth Hougham ,  Leena P. Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelorme ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

IPC分类号： H01L23/52 ,  H01L21/44 ,  B04B11/00

CPC分类号： H05K3/4053 ,  B05D1/002 ,  H01L21/486 ,  H01L21/76898 ,  H05K2201/09509 ,  H05K2203/1554

摘要： The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

摘要翻译： 本公开一般涉及半导体，集成电路，特别是但不限于，用于填充高纵横比通孔和沟槽的离心方法，其具有粉末，糊料，材料悬浮液，用作导电，结构 支撑或电子部件的保护构件。

公开(公告)号：US07452568B2

公开(公告)日：2008-11-18

申请号：US11049846

申请日：2005-02-04

申请人： Gareth Hougham ,  Leena Paivikki Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelorme ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

发明人： Gareth Hougham ,  Leena Paivikki Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelorme ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

IPC分类号： B05D3/12 ,  B05D1/42

CPC分类号： H05K3/4053 ,  B05D1/002 ,  H01L21/486 ,  H01L21/76898 ,  H05K2201/09509 ,  H05K2203/1554

摘要： The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

摘要翻译： 本公开总体上涉及半导体，集成电路，特别是但不限于，用于填充高纵横比通孔和沟槽的离心方法，其具有粉末，浆料，材料的悬浮液，以充当导电的结构 支撑或电子部件的保护构件。

公开(公告)号：US20050121768A1

公开(公告)日：2005-06-09

申请号：US10729254

申请日：2003-12-05

申请人： Daniel Edelstein ,  Paul Andry ,  Leena Buchwalter ,  Jon Casey ,  Sherif Goma ,  Raymond Horton ,  Gareth Hougham ,  Michael Lane ,  Xiao Liu ,  Chirag Patel ,  Edmund Sprogis ,  Michelle Steen ,  Brian Sundlof ,  Cornelia Tsang ,  George Walker

发明人： Daniel Edelstein ,  Paul Andry ,  Leena Buchwalter ,  Jon Casey ,  Sherif Goma ,  Raymond Horton ,  Gareth Hougham ,  Michael Lane ,  Xiao Liu ,  Chirag Patel ,  Edmund Sprogis ,  Michelle Steen ,  Brian Sundlof ,  Cornelia Tsang ,  George Walker

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/49883 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

摘要翻译： 一种载体结构和方法，用于制造具有通孔的载流子结构，每个导通孔具有导电结构，其有效热膨胀系数小于或接近于基板的热膨胀系数，并且具有小于或等于 或者与衬底的密切匹配。 导电结构可以包括同心的通孔填充区域，其具有同心设置的不同材料，由导电材料的环形环包围的衬底材料的芯，由导电材料的环形环包围的CTE匹配的非导电材料的芯， 具有低CTE的内部空隙的导电通孔，或已经烧结或熔合的诸如金属 - 陶瓷浆料的导电复合材料的完整填充物。

公开(公告)号：US20060027934A1

公开(公告)日：2006-02-09

申请号：US11242221

申请日：2005-10-03

申请人： Daniel Edelstein ,  Paul Andry ,  Leena Buchwalter ,  Jon Casey ,  Sherif Goma ,  Raymond Horton ,  Gareth Hougham ,  Michael Lane ,  Xiao Liu ,  Chirag Patel ,  Edmund Sprogis ,  Michelle Steen ,  Brian Sundlof ,  Cornelia Tsang ,  George Walker ,  Yu-Ting Cheng ,  Kenneth Ocheltree ,  Robert Montoye

发明人： Daniel Edelstein ,  Paul Andry ,  Leena Buchwalter ,  Jon Casey ,  Sherif Goma ,  Raymond Horton ,  Gareth Hougham ,  Michael Lane ,  Xiao Liu ,  Chirag Patel ,  Edmund Sprogis ,  Michelle Steen ,  Brian Sundlof ,  Cornelia Tsang ,  George Walker ,  Yu-Ting Cheng ,  Kenneth Ocheltree ,  Robert Montoye

IPC分类号： H01L23/48

CPC分类号： H01L23/49883 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

摘要翻译： 一种载体结构和方法，用于制造具有通孔的载流子结构，每个导通孔具有导电结构，其有效热膨胀系数小于或接近于基板的热膨胀系数，并且具有小于或等于 或者与衬底的密切匹配。 导电结构可以包括同心的通孔填充区域，其具有同心设置的不同材料，由导电材料的环形环包围的衬底材料的芯，由导电材料的环形环包围的CTE匹配的非导电材料的芯， 具有低CTE的内部空隙的导电通孔，或已经烧结或熔合的诸如金属 - 陶瓷浆料的导电复合材料的完整填充物。

公开(公告)号：US20060255480A1

公开(公告)日：2006-11-16

申请号：US10908480

申请日：2005-05-13

申请人： Jon Casey ,  Michael Berger ,  Leena Buchwalter ,  Donald Canaperi ,  Raymond Horton ,  Anurag Jain ,  Eric Perfecto ,  James Tornello

发明人： Jon Casey ,  Michael Berger ,  Leena Buchwalter ,  Donald Canaperi ,  Raymond Horton ,  Anurag Jain ,  Eric Perfecto ,  James Tornello

IPC分类号： H01L23/29

CPC分类号： H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

摘要： Sealing a via using a soventless, low viscosity, high temperature stable polymer or a high solids content polymer solution of low viscosity, where the polymeric material is impregnated within the via at an elevated temperature. A supply chamber is introduced to administer the polymeric material at an elevated temperature, typically at a temperature high enough to liquefy the polymeric material. The polymeric material is introduced through heated supply lines under force from a pump, piston, or a vacuum held within said supply chamber.

摘要翻译： 使用无粘性，低粘度，高温稳定的聚合物或低粘度的高固含量聚合物溶液密封通孔，其中聚合物材料在高温下浸渍在通孔内。 引入供应室以在升高的温度下施用聚合物材料，通常在高至足以液化聚合物材料的温度下。 聚合物材料通过来自泵，活塞或保持在所述供应室内的真空的力的加热供应管线引入。

公开(公告)号：US20050100743A1

公开(公告)日：2005-05-12

申请号：US10702280

申请日：2003-11-06

申请人： Gareth Hougham ,  Xiao Liu ,  S. Chey ,  James Doyle ,  Joseph Zinter ,  Michael Rooks ,  Brian Sundlof ,  Jon Casey

发明人： Gareth Hougham ,  Xiao Liu ,  S. Chey ,  James Doyle ,  Joseph Zinter ,  Michael Rooks ,  Brian Sundlof ,  Jon Casey

IPC分类号： B32B15/08 ,  B32B27/00 ,  H01R13/24 ,  H01R43/00 ,  H05K1/02 ,  H05K3/32

CPC分类号： H01R13/2414 ,  B32B15/08 ,  H01R43/007 ,  H05K1/0271 ,  H05K3/321 ,  H05K3/325 ,  H05K2201/0218 ,  H05K2201/068 ,  Y10T428/12028 ,  Y10T428/12181 ,  Y10T428/12535 ,  Y10T428/249971 ,  Y10T428/249974 ,  Y10T428/31609

摘要： A negative coefficient of thermal expansion particle includes a first bilayer having a first bilayer inner layer and a first bilayer outer layer, and a second bilayer having a second bilayer inner layer and a second bilayer outer layer. The first and second bilayers are joined together along perimeters of the first and second bilayer outer layers and first and second bilayer inner layers, respectively. The first bilayer inner layer and the second bilayer inner layer are made of a first material and the first bilayer outer layer and the second bilayer outer layer are made of a second material. The first material has a greater coefficient of thermal expansion than that of the second material.

摘要翻译： 负系数的热膨胀粒子包括具有第一双层内层和第一双层外层的第一双层和具有第二双层内层和第二双层外层的第二双层。 第一和第二双层分别沿着第一和第二双层外层以及第一和第二双层内层的周边连接在一起。 第一双层内层和第二双层内层由第一材料制成，第一双层外层和第二双层外层由第二材料制成。 第一种材料具有比第二种材料更大的热膨胀系数。

公开(公告)号：US20050200025A1

公开(公告)日：2005-09-15

申请号：US11037995

申请日：2005-01-18

申请人： Jon Casey ,  Daniel Edelstein

发明人： Jon Casey ,  Daniel Edelstein

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/02129 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02318 ,  H01L21/02343 ,  H01L21/31625 ,  H01L21/31695 ,  H01L21/7682

摘要： A low-k dielectric for use as an interlayer for an interconnect structure is provided. The dielectric of the present invention is an alkaline boron silicate glass which when formulated in certain compositional ranges can undergo spinodal decomposition when processed using certain thermal profiles. Spinodal decomposition is a chemical and physical separation of the silicate glass into a distinct interpenetrating microstructure which contains a substantially pure silicon dioxide network and a boron-rich network. The dimension (i.e., scale), and the amount of separation can be controlled through compositional and thermal control during the processing of the silicate glass.

公开(公告)号：US20050151213A1

公开(公告)日：2005-07-14

申请号：US10707746

申请日：2004-01-08

申请人： Jon Casey ,  William Ferrante ,  Edward Kiewra ,  Carl Radens ,  William Tonti

发明人： Jon Casey ,  William Ferrante ,  Edward Kiewra ,  Carl Radens ,  William Tonti

IPC分类号： H01L21/28 ,  G01K7/22 ,  H01C7/00 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L21/00 ,  H01L27/14 ,  H01L29/82 ,  H01L31/058

CPC分类号： H01L21/76895 ,  G01K7/226 ,  H01C7/006 ,  H01L21/76224 ,  H01L21/76838

摘要： A structure and method are provided for forming a thermistor. Isolation structures are formed in a substrate including at least an upper layer of a single crystal semiconductor. A layer of salicide precursor is deposited over the isolation region and the upper layer. The salicide precursor is then reacted with the upper layer to form a salicide self-aligned to the upper layer. Finally, the unreacted portions of the salicide precursor are then removed while preserving a portion of the salicide precursor over the isolation region as a body of the thermistor. An alternative integrated circuit thermistor is formed from a region of thermistor material in an embossed region of an interlevel dielectric (ILD).

摘要翻译： 提供了用于形成热敏电阻的结构和方法。 隔离结构形成在至少包括单晶半导体的上层的基板中。 一层自杀化合物前体沉积在隔离区和上层上。 然后将自对准硅化物前体与上层反应以形成与上层自对准的自对准硅化物。 最后，除去自对准硅胶前体的未反应部分，同时在作为热敏电阻体的隔离区域上保留一部分自杀化合物前体。 一种替代的集成电路热敏电阻由层间电介质（ILD）的压花区域中的热敏电阻材料的区域形成。