公开(公告)号：US07810952B2

公开(公告)日：2010-10-12

申请号：US11930727

申请日：2007-10-31

Applicant: Su Hwan Oh ,  Jong Moo Lee

Inventor： Su Hwan Oh ,  Jong Moo Lee

IPC: G02B26/08 ,  G02F1/35 ,  H01S3/10 ,  F21S8/10

CPC classification number: H04N9/3129

Abstract: A method and apparatus for modulating a particular light source used for laser display are provided. The apparatus includes a digital modulator digitally modulating light output from a semiconductor laser to a frequency higher than a repetition frequency required for laser image display; and a pixel brightness adjustor inserting at least one high-speed pulse into a period of the modulated output light, which is required for a single pixel, and adjusting a brightness of the pixel by adjusting the number of the inserted high-speed pulses.

Abstract translation: 提供了用于调制用于激光显示的特定光源的方法和装置。 该装置包括将从半导体激光器输出的光数字调制到高于激光图像显示所需的重复频率的数字调制器; 以及像素亮度调整器，其将至少一个高速脉冲插入到单个像素所需的调制输出光的周期中，并且通过调整插入的高速脉冲的数量来调整像素的亮度。

公开(公告)号：US08937980B2

公开(公告)日：2015-01-20

申请号：US13614280

申请日：2012-09-13

Applicant: Oh Kee Kwon ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

Inventor： Oh Kee Kwon ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/1225 ,  H01S5/1243 ,  H01S5/2213 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34306

Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Abstract translation: 提供分布式反馈激光二极管。 分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层， 第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

公开(公告)号：US07920322B2

公开(公告)日：2011-04-05

申请号：US11924772

申请日：2007-10-26

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S5/00 ,  H01L29/06 ,  H01L33/20

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US07179669B2

公开(公告)日：2007-02-20

申请号：US11414644

申请日：2006-04-27

Applicant: Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

Inventor： Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

IPC: H01L21/00

CPC classification number: H01S5/10 ,  G02B6/12004 ,  G02B6/124 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0607 ,  H01S5/06255 ,  H01S5/0654 ,  H01S5/101 ,  H01S5/1025 ,  H01S5/1082 ,  H01S5/12 ,  H01S5/1212 ,  H01S5/1237 ,  H01S5/1243 ,  H01S5/125 ,  H01S5/14

Abstract: A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.

Abstract translation: 公开了一种包括法布里 - 珀罗滤波器和电极阵列的可调谐半导体激光器。 空腔中的光束的传播方向可以连续地向电极施加电场或电流，并且可以通过腔内激光束的角度的连续移动在宽波长带上连续执行调谐。

公开(公告)号：US07599624B2

公开(公告)日：2009-10-06

申请号：US11252401

申请日：2005-10-17

Applicant: Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

Inventor： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

IPC: H04J14/00

CPC classification number: H04J14/0282 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J2014/0253

Abstract: A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

Abstract translation: 信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率， 数据结构，并正确使用必要的光学元件。 此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。 此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

公开(公告)号：US07130325B2

公开(公告)日：2006-10-31

申请号：US10749043

申请日：2003-12-29

Applicant: Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

Inventor： Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

IPC: H01S5/00 ,  H01S3/08

CPC classification number: H01S5/06256 ,  H01S5/028 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125 ,  H01S5/2205 ,  H01S5/227

Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.

Abstract translation: 本发明涉及具有能够调谐波长的结构的半导体激光器，其中采样光栅分布反馈SG-DFB结构部分和采样光栅分布布拉格反射器SG-DBR结构部分被集成。 在本发明中，折射率根据SG-DFB结构部分和SG-DBR结构部分中的相位控制区域的电流而变化，由此可以连续或不连续地调谐波长。 因此，在这种波长可调谐半导体激光器中，其结构相对简单，对制造和批量生产半导体激光器相对有用。 此外，这种波长可调谐半导体激光器具有优异的输出光学效率，同时可以调谐宽带的波长。

公开(公告)号：US07065108B2

公开(公告)日：2006-06-20

申请号：US10744457

申请日：2003-12-22

Applicant: Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

Inventor： Sahng Gi Park ,  Moon Ho Park ,  Ji Myon Lee ,  Su Hwan Oh ,  Kyong Hon Kim

IPC: H01S3/10

CPC classification number: H01S5/10 ,  G02B6/12004 ,  G02B6/124 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0607 ,  H01S5/06255 ,  H01S5/0654 ,  H01S5/101 ,  H01S5/1025 ,  H01S5/1082 ,  H01S5/12 ,  H01S5/1212 ,  H01S5/1237 ,  H01S5/1243 ,  H01S5/125 ,  H01S5/14

Abstract: A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.

Abstract translation: 公开了一种包括法布里 - 珀罗滤波器和电极阵列的可调谐半导体激光器。 空腔中的光束的传播方向可以连续地向电极施加电场或电流，并且可以通过腔内激光束的角度的连续移动在宽波长带上连续执行调谐。

公开(公告)号：US08363314B2

公开(公告)日：2013-01-29

申请号：US12929970

申请日：2011-02-28

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S5/227

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US08107508B2

公开(公告)日：2012-01-31

申请号：US12541561

申请日：2009-08-14

Applicant: Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

IPC: H01S3/08

CPC classification number: H01S5/14 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/164 ,  H01S5/2231

Abstract: Provided is an external cavity laser light source. The light source includes a substrate, an optical waveguide, and a current blocking layer. The optical waveguide includes a passive waveguide layer, a lower clad layer, an active layer, and an upper clad layer that are sequentially stacked on the substrate and is divided into regions including a linear active waveguide region, a bent active waveguide region, a tapered waveguide region, and a window region. The current blocking layer was formed an outside of the active layer to reduce leakage current. The linear and bent active waveguide regions have a buried heterostructure (BH), and the tapered waveguide region and the window region have a buried ridge stripe (BRS) structure. The passive waveguide layer a width substantially equal to a maximal width of the tapered waveguide region at least in the bent active waveguide region, the tapered waveguide region, and the window region.

Abstract translation: 提供外腔激光光源。 光源包括基板，光波导和电流阻挡层。 光波导包括顺序层叠在基板上的无源波导层，下包层，有源层和上覆层，并分为包括线性有源波导区域，弯曲有源波导区域，锥形 波导区域和窗口区域。 电流阻挡层形成在有源层的外侧，以减少泄漏电流。 线性和弯曲的有源波导区域具有掩埋异质结构（BH），并且锥形波导区域和窗口区域具有掩埋脊条纹（BRS）结构。 至少在弯曲的有源波导区域，锥形波导区域和窗口区域中，无源波导层的宽度基本上等于锥形波导区域的最大宽度。

公开(公告)号：US08989229B2

公开(公告)日：2015-03-24

申请号：US13486698

申请日：2012-06-01

Applicant: Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

Inventor： Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

IPC: H01S5/22 ,  H01S5/026 ,  H01S5/14 ,  H01L33/20 ,  H01S5/022 ,  H01S5/062 ,  H01S5/10 ,  H01S5/223 ,  H01S5/343 ,  H01L33/00 ,  G02B6/30 ,  G02B6/42

CPC classification number: H01L33/005 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4206 ,  H01L33/0045 ,  H01L33/20 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2213 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306 ,  H01S2301/176

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract translation: 提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。 超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导， 脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。