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    Memory device and method for manufacture
    1.
    发明授权
    Memory device and method for manufacture 有权
    存储器件及其制造方法

    公开(公告)号：US06344403B1

    公开(公告)日：2002-02-05

    申请号：US09595735

    申请日：2000-06-16

    申请人： Sucharita Madhukar ,  Ramachandran Muralidhar ,  David L. O'Meara ,  Kristen C. Smith ,  Bich-Yen Nguyen

    发明人： Sucharita Madhukar ,  Ramachandran Muralidhar ,  David L. O'Meara ,  Kristen C. Smith ,  Bich-Yen Nguyen

    IPC分类号： H01L2120

    CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/3145 ,  H01L29/42332 ,  H01L29/66825

    摘要： A semiconductor memory device with a floating gate that includes a plurality of nanoclusters (21) and techniques useful in the manufacturing of such a device are presented. The device is formed by first providing a semiconductor substrate (12) upon which a tunnel dielectric layer (14) is formed. A plurality of nanoclusters (19) is then grown on the tunnel dielectric layer (14). The growth of the nanoclusters (19) may be accomplished using low pressure chemical vapor deposition (LPCVD) or ultra high vacuum chemical vapor deposition (UHCVD) processes. Such growth may be facilitated by formation of a nitrogen-containing layer (502) overlying the tunnel dielectric layer (14). After growth of the nanoclusters (21), a control dielectric layer (20) is formed over the nanoclusters (21). In order to prevent oxidation of the formed nanoclusters (21), the nanoclusters (21) may be encapsulated using various techniques prior to formation of the control dielectric layer (20). A gate electrode (24) is then formed over the control dielectric (20), and portions of the control dielectric, the plurality of nanoclusters, and the gate dielectric that do not underlie the gate electrode are selectively removed. After formation of spacers (35), source and drain regions (32, 34) are then formed by implantation in the semiconductor layer (12) such that a channel region is formed between the source and drain regions (32, 34) underlying the gate electrode (24).

    摘要翻译： 提出了一种具有浮动栅极的半导体存储器件，其包括多个纳米团簇（21）和用于制造这种器件的技术。 该器件通过首先提供其上形成有隧道介电层（14）的半导体衬底（12）形成。 然后在隧道介电层（14）上生长多个纳米团簇（19）。 纳米团簇（19）的生长可以使用低压化学气相沉积（LPCVD）或超高真空化学气相沉积（UHCVD）工艺来实现。 可以通过形成覆盖在隧道介电层（14）上的含氮层（502）来促进这种生长。 在纳米团簇（21）生长之后，在纳米团簇（21）上形成控制电介质层（20）。 为了防止形成的纳米团簇（21）的氧化，可以在形成控制电介质层（20）之前使用各种技术将纳米团簇（21）进行封装。 然后在控制电介质（20）上形成栅极（24），并且选择性地去除不在栅电极下面的控制电介质，多个纳米团簇和栅极电介质的部分。 在形成间隔物（35）之后，然后通过注入在半导体层（12）中形成源极和漏极区域（32,34），使得沟道区域形成在栅极下面的源极和漏极区域（32,34）之间 电极（24）。

    Memory device that includes passivated nanoclusters and method for manufacture
    2.
    发明授权
    Memory device that includes passivated nanoclusters and method for manufacture 有权
    包含钝化纳米簇的记忆体装置及其制造方法

    公开(公告)号：US06297095B1

    公开(公告)日：2001-10-02

    申请号：US09596399

    申请日：2000-06-16

    申请人： Ramachandran Muralidhar ,  Chitra K. Subramanian ,  Sucharita Madhukar ,  Bruce E. White ,  Michael A. Sadd ,  Sufi Zafar ,  David L. O'Meara ,  Bich-Yen Nguyen

    发明人： Ramachandran Muralidhar ,  Chitra K. Subramanian ,  Sucharita Madhukar ,  Bruce E. White ,  Michael A. Sadd ,  Sufi Zafar ,  David L. O'Meara ,  Bich-Yen Nguyen

    IPC分类号： H01L21336

    CPC分类号： H01L21/28282 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/66439 ,  H01L29/7888

    摘要： A semiconductor memory device with a floating gate that includes a plurality of nanoclusters (21) and techniques useful in the manufacturing of such a device are presented. The device is formed by first providing a semiconductor substrate (12) upon which a tunnel dielectric layer (14) is formed. A plurality of nanoclusters (19) is then grown on the tunnel dielectric layer (14). After growth of the nanoclusters (21), a control dielectric layer (20) is formed over the nanoclusters (21). In order to prevent oxidation of the formed nanoclusters (21), the nanoclusters (21) may be encapsulated using various techniques prior to formation of the control dielectric layer (20). A gate electrode (24) is then formed over the control dielectric (20), and portions of the control dielectric, the plurality of nanoclusters, and the gate dielectric that do not underlie the gate electrode are selectively removed. After formation of spacers (35), source and drain regions (32, 34) are then formed by implantation in the semiconductor layer (12) such that a channel region is formed between the source and drain regions (32, 34) underlying the gate electrode (24).

    摘要翻译： 提出了一种具有浮动栅极的半导体存储器件，其包括多个纳米团簇（21）和用于制造这种器件的技术。 该器件通过首先提供其上形成有隧道介电层（14）的半导体衬底（12）形成。 然后在隧道介电层（14）上生长多个纳米团簇（19）。 在纳米团簇（21）生长之后，在纳米团簇（21）上形成控制电介质层（20）。 为了防止形成的纳米团簇（21）的氧化，可以在形成控制电介质层（20）之前使用各种技术将纳米团簇（21）进行封装。 然后在控制电介质（20）上形成栅极（24），并且选择性地去除不在栅电极下面的控制电介质，多个纳米团簇和栅极电介质的部分。 在形成间隔物（35）之后，然后通过注入在半导体层（12）中形成源极和漏极区域（32,34），使得沟道区域形成在栅极下面的源极和漏极区域（32,34）之间 电极（24）。

    Memory device and method for using prefabricated isolated storage elements
    3.
    发明授权
    Memory device and method for using prefabricated isolated storage elements 有权
    使用预制隔离存储元件的存储器件和方法

    公开(公告)号：US06413819B1

    公开(公告)日：2002-07-02

    申请号：US09595821

    申请日：2000-06-16

    申请人： Sufi Zafar ,  Ramachandran Muralidhar ,  Bich-Yen Nguyen ,  Sucharita Madhukar ,  Daniel T. Pham ,  Michael A. Sadd ,  Chitra K. Subramanian

    发明人： Sufi Zafar ,  Ramachandran Muralidhar ,  Bich-Yen Nguyen ,  Sucharita Madhukar ,  Daniel T. Pham ,  Michael A. Sadd ,  Chitra K. Subramanian

    IPC分类号： H01L21336

    CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L29/7883 ,  H01L29/7888

    摘要： A semiconductor device that includes a floating gate made up of a plurality of pre-formed isolated storage elements (18) and a method for making such a device is presented. The device is formed by first providing a semiconductor layer (12) upon which a first gate insulator (14) is formed. A plurality of pre-fabricated isolated storage elements (18) is then deposited on the first gate insulator (14). This deposition step may be accomplished by immersion in a colloidal solution (16) that includes a solvent and pre-fabricated isolated storage elements (18). Once deposited, the solvent of the solution (16) can be removed, leaving the pre-fabricated isolated storage elements (18) deposited on the first gate insulator (14). After depositing the pre-fabricated isolated storage elements (18), a second gate insulator (20) is formed over the pre-fabricated isolated storage elements (18). A gate electrode (24) is then formed over the second gate insulator (20), and portions the first and second gate insulators and the plurality of pre-fabricated isolated storage elements that do not underlie the gate electrode are selectively removed. A source region (32) and a drain region (34) are then formed in the semiconductor layer (12) such that a channel region is formed between underlying the gate electrode (24).

    摘要翻译： 提供了一种半导体器件，其包括由多个预先形成的隔离存储元件（18）构成的浮动栅极和用于制造这种器件的方法。 该器件通过首先提供形成第一栅极绝缘体（14）的半导体层（12）形成。 然后，多个预制隔离存储元件（18）沉积在第一栅极绝缘体（14）上。 该沉积步骤可以通过浸入包括溶剂和预制隔离存储元件（18）的胶体溶液（16）中来实现。 一旦沉积，可以除去溶液（16）的溶剂，留下沉积在第一栅极绝缘体（14）上的预制隔离存储元件（18）。 在沉积预制隔离存储元件（18）之后，在预制隔离存储元件（18）上形成第二栅极绝缘体（20）。 然后，在第二栅极绝缘体（20）之上形成栅电极（24），并且选择性地去除不在栅电极下面的第一和第二栅极绝缘体和多个预制隔离存储元件的部分。 然后在半导体层（12）中形成源极区（32）和漏极区（34），使得在栅电极（24）下方形成沟道区。

    METHOD FOR FORMING A SPLIT GATE MEMORY DEVICE
    9.
    发明申请
    METHOD FOR FORMING A SPLIT GATE MEMORY DEVICE 有权
    形成分离栅存储器件的方法

    公开(公告)号：US20080199996A1

    公开(公告)日：2008-08-21

    申请号：US11676403

    申请日：2007-02-19

    申请人： Ramachandran Muralidhar ,  Rajesh A. Rao ,  Matthew T. Herrick ,  Narayanan C. Ramani ,  Robert F. Steimle

    发明人： Ramachandran Muralidhar ,  Rajesh A. Rao ,  Matthew T. Herrick ,  Narayanan C. Ramani ,  Robert F. Steimle

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L27/115 ,  H01L27/11521

    摘要： A method forms a split gate memory device. A layer of select gate material over a substrate is patterned to form a first sidewall. A sacrificial spacer is formed adjacent to the first sidewall. Nanoclusters are formed over the substrate including on the sacrificial spacer. The sacrificial spacer is removed after the forming the layer of nanoclusters, wherein nanoclusters formed on the sacrificial spacer are removed and other nanoclusters remain. A layer of control gate material is formed over the substrate after the sacrificial spacer is removed. A control gate of a split gate memory device is formed from the layer of control gate material, wherein the control gate is located over remaining nanoclusters.

    摘要翻译： 一种方法形成分离栅极存储器件。 将衬底上的选择栅极材料层图案化以形成第一侧壁。 邻近第一侧壁形成牺牲隔离物。 纳米团簇形成在包括在牺牲间隔物上的衬底上。 在形成纳米团簇层之后去除牺牲隔离物，其中在牺牲隔离物上形成的纳米团簇被去除并且其它纳米团簇保留。 在除去牺牲间隔物之后，在衬底上形成一层控制栅极材料。 分离栅极存储器件的控制栅极由控制栅极材料层形成，其中控制栅极位于剩余的纳米簇上。