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231 条记录 (耗时 0.028 秒)

    Article comprising a Pb-free solder having improved mechanical properties
    1.
    发明授权
    Article comprising a Pb-free solder having improved mechanical properties 失效
    制品包括具有改善的机械性能的无铅焊料

    公开(公告)号：US5762866A

    公开(公告)日：1998-06-09

    申请号：US502941

    申请日：1995-07-17

    申请人： Sungho Jin ,  Mark Thomas McCormack

    发明人： Sungho Jin ,  Mark Thomas McCormack

    IPC分类号： B23K35/26 ,  C22C13/00 ,  C22C13/02

    CPC分类号： C22C13/00 ,  B23K35/262

    摘要： A high-strength Pb-free solder alloy, based on the Sn--Ag--Zn system, is disclosed. The Pb-free solder alloy contains, in weight percent, 0.2-0.6% Zn, 1-6% Ag, one or both 0.2-0.6% In and 0.2-0.6% Bi, and the balance Sn. The addition of Zn significantly improves the mechanical strength and creep resistance of e.g., Sn--3.5% Ag eutectic solder while maintaining substantially the same level of ductility. The increase in strength is as much as 48% over that of the Sn--3.5% Ag alloy. This strengthening from the Zn additions is attributed to a uniform solidification structure and a substantial refinement of the precipitates in the alloy. Essentially all of the added Zn resides in the more corrosion-resistant, Ag-based, intermetallic precipitates, leaving the Sn-rich matrix primarily free of Zn in solid solution.

    摘要翻译： 公开了一种基于Sn-Ag-Zn系统的高强度无铅焊料合金。 无铅焊料合金以重量百分比含有0.2-0.6％的Zn，1-6％的Ag，一种或两种为0.2-0.6％的In和0.2-0.6％的Bi，余量为Sn。 Zn的添加显着提高例如Sn-3.5％Ag共晶焊料的机械强度和抗蠕变性，同时保持基本上相同的延展性水平。 强度比Sn-3.5％Ag合金高出48％。 Zn添加物的这种强化归因于合金中的均匀凝固结构和沉淀物的显着改进。 基本上所有添加的Zn都位于更耐腐蚀的Ag基金属间析出物中，使富含Sn的基体在固溶体中基本上不含Zn。

    Lead-free alloys for use in solder bonding
    4.
    发明授权
    Lead-free alloys for use in solder bonding 失效
    用于焊接的无铅合金

    公开(公告)号：US5698160A

    公开(公告)日：1997-12-16

    申请号：US705035

    申请日：1996-08-29

    申请人： Ho Sou Chen ,  Sungho Jin ,  Mark Thomas McCormack

    发明人： Ho Sou Chen ,  Sungho Jin ,  Mark Thomas McCormack

    IPC分类号： B23K35/26 ,  C22C13/00

    CPC分类号： C22C13/00 ,  B23K35/262

    摘要： According to the present invention, an article of manufacture is provided having at least one region which includes a lead-free solder composition. The lead-free solder composition comprises an alloy of at least 50 wt. % tin and 7-30 wt. % zinc. An effective amount of silver is added to increase the ductility of the resultant alloy at least 25% over the ductility of the binary eutectic tin-zinc alloy. In a further embodiment, the present invention provides alloys useful in articles comprising lead-free solder compositions. The alloys include at least (8.0+y) wt. % zinc, 0.25 y to 0.5 y wt. % silver and at least 50 wt. % tin where y is from 0.2 to 22.

    摘要翻译： 根据本发明，提供了具有至少一个包括无铅焊料组合物的区域的制造品。 无铅焊料组合物包含至少50wt。 ％锡和7-30重量％ ％锌。 加入有效量的银以使所得合金的延展性比二元共晶锡 - 锌合金的延展性提高至少25％。 在另一个实施方案中，本发明提供了可用于包含无铅焊料组合物的制品中的合金。 合金包括至少（8.0 + y）wt。 ％锌，0.25〜0.5重量％ ％银和至少50重量％ ％锡，其中y为0.2至22。

    Display apparatus comprising diamond field emitters
    5.
    发明授权
    Display apparatus comprising diamond field emitters 失效
    包括金刚石场发射器的显示装置

    公开(公告)号：US5747918A

    公开(公告)日：1998-05-05

    申请号：US567867

    申请日：1995-12-06

    申请人： Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

    发明人： Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

    IPC分类号： H01J31/12 ,  H01J1/304 ,  H01J29/04 ,  H01J1/30

    CPC分类号： H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

    摘要： A novel and advantageous cathode structure for a field emission display apparatus is disclosed. A given pixel comprises a multiplicity of spaced apart emitter bodies on a support. A given emitter body comprises diamond and/or rare earth boride, and has a relatively sharp geometrical feature that facilitates electron emission from the emitter body. By way of example, the emitter body comprises diamond bodies grown on a support, or it comprises a pre-existing diamond particle that was placed on the support. Such emitter bodies generally can be provided easily and at low cost, and typically have naturally occurring sharp geometrical features such as points and edges. We have also discovered that appropriately grown rare earth boride films of thickness 30 nm or less may substantially improve electron emission from emitter bodies, and some preferred embodiments of the invention comprise a cathode structure that comprises a thin layer of, e.g., LaB.sub.6 on the emitter bodies. Methods of making cathodes according to the invention are also disclosed.

    摘要翻译： 公开了一种用于场发射显示装置的新型和有利的阴极结构。 给定像素包括在支撑体上的多个间隔开的发射体。 给定的发射体包括金刚石和/或稀土硼化物，并且具有促进发射体的电子发射的相对尖锐的几何特征。 作为示例，发射器体包括在支撑体上生长的金刚石体，或者包括放置在支撑体上的预先存在的金刚石颗粒。 这样的发射体通常可以容易且低成本地提供，并且通常具有天然存在的尖锐几何特征，例如点和边缘。 我们还发现，适当生长的厚度为30nm或更小的稀土硼化物膜可以显着改善发射体的电子发射，并且本发明的一些优选实施例包括阴极结构，其包括例如发射极上的LaB6的薄层 身体。 还公开了制备根据本发明的阴极的方法。

    Article comprising metal oxide nanostructures
    6.
    发明授权
    Article comprising metal oxide nanostructures 失效
    文章包含金属氧化物纳米结构

    公开(公告)号：US08659217B2

    公开(公告)日：2014-02-25

    申请号：US11892737

    申请日：2007-08-27

    申请人： Dong-Wook Kim ,  Sungho Jin ,  In-Kyung Yoo

    发明人： Dong-Wook Kim ,  Sungho Jin ,  In-Kyung Yoo

    IPC分类号： H01J1/62

    CPC分类号： H01J31/127 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0431 ,  H01J2329/0455 ,  Y10S977/742

    摘要： This invention includes field emitters, in particular, electron field emitters with metal oxide nanoscale, aligned and sharped-tip emitter structures, the metal oxide emitter structures being a plurality of carbon nanostructures supported by and projecting from a substrate and including a metal oxide coating overlying the surfaces of the plurality of carbon nanostructures.

    摘要翻译： 本发明包括场致发射体，特别是具有金属氧化物纳米尺度，排列和锐尖发射极结构的电子场发射体，金属氧化物发射体结构是多个碳纳米结构，由碳纳米结构支撑并从衬底突出，并包括覆盖上面的金属氧化物涂层 多个碳纳米结构的表面。

    Articles comprising high-electrical-conductivity nanocomposite material and method for fabricating same
    9.
    发明授权
    Articles comprising high-electrical-conductivity nanocomposite material and method for fabricating same 有权
    包含高导电性纳米复合材料的制品及其制造方法

    公开(公告)号：US07959830B2

    公开(公告)日：2011-06-14

    申请号：US10584680

    申请日：2004-12-23

    申请人： Sungho Jin

    发明人： Sungho Jin

    IPC分类号： H01B1/02 ,  B32B3/02 ,  B22F3/00 ,  H01L21/763

    CPC分类号： H01B1/026 ,  B22F1/0018 ,  B22F2998/00 ,  B22F2998/10 ,  B22F2999/00 ,  B82Y30/00 ,  C22C47/04 ,  C25D5/48 ,  C25D15/02 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10T428/12049 ,  Y10T428/12493 ,  Y10T428/12576 ,  Y10T428/12771 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/2991 ,  B22F2207/03 ,  B22F1/025 ,  B22F1/0085 ,  B22F3/02 ,  B22F3/10 ,  B22F2201/01 ,  H01L2924/00

    摘要： This invention discloses novel nanocomposite material structures which are strong, highly conductive, and fatigue-resistant. It also discloses novel fabrication techniques to obtain such structures. The new nanocomposite materials comprise a high-conductivity base metal, such as copper, incorporating high-conductivity dispersoid particles that simultaneously minimize field enhancements, maintain good thermal conductivity, and enhance mechanical strength. The use of metal nanoparticles with electrical conductivity comparable to that of the base automatically removes the regions of higher RF field and enhanced current density. Additionally, conductive nanoparticles will reduce the surface's sensitivity to arc or sputtering damage. If the surface is sputtered away to uncover the nanoparticles, their properties will not be dramatically different from the base surface. Most importantly, the secondary electron emission coefficients of all materials in the nanocomposite are small and close to unity, whereas the previously used insulating particles can produce significant and undesirable electron multiplication.

    摘要翻译： 本发明公开了具有强的，高导电性和耐疲劳性的新型纳米复合材料结构。 它还公开了获得这种结构的新型制造技术。 新的纳米复合材料包括高导电性贱金属（例如铜），其结合了高导电性分散质颗粒，同时最小化场增强，保持良好的导热性和增强机械强度。 使用具有与碱性电导率相当的导电性的金属纳米粒子自动去除较高RF场的区域和增强的电流密度。 另外，导电纳米颗粒将降低表面对电弧或溅射损伤的敏感性。 如果表面被溅射以揭开纳米颗粒，它们的性质将不会与基底表面显着不同。 最重要的是，纳米复合材料中所有材料的二次电子发射系数很小，接近于单一，而先前使用的绝缘颗粒可以产生显着和不期望的电子倍增。

    Probe system comprising an electric-field-aligned probe tip and method for fabricating the same
    10.
    发明授权
    Probe system comprising an electric-field-aligned probe tip and method for fabricating the same 有权
    包括电场对准探针尖端的探针系统及其制造方法

    公开(公告)号：US07735147B2

    公开(公告)日：2010-06-08

    申请号：US12088223

    申请日：2006-10-10

    申请人： Sungho Jin ,  Li-Han Chen ,  I-Chen Chen

    发明人： Sungho Jin ,  Li-Han Chen ,  I-Chen Chen

    IPC分类号： H01J37/06

    CPC分类号： H01J9/025 ,  C01B32/162 ,  C01B32/18 ,  G01Q60/38 ,  G01Q60/56 ,  G01Q70/12 ,  G11B9/1409 ,  H01J1/3044 ,  H01J2201/30407 ,  H01J2201/30469 ,  Y10T428/11

    摘要： A mechanically stable and oriented scanning probe tip comprising a carbon nanotube having a base with gradually decreasing diameter, with a sharp tip at the probe tip. Such a tip or an array of tips is produced by depositing a catalyst metal film on a substrate (10 & 12 in FIG. 1(a)), depositing a carbon dot (14 in FIG. 1(b)) on the catalyst metal film, etching away the catalyst metal film (FIG. 1(c)) not masked by the carbon dot, removing the carbon dot from the catalyst metal film to expose the catalyst metal film (FIG. 1(d)), and growing a carbon nanotube probe tip on the catalyst film (16 in FIG. 1(e)). The carbon probe tips can be straight, angled, or sharply bent and have various technical applications.

    摘要翻译： 一种机械稳定和取向的扫描探针尖端，其包括具有逐渐减小的直径的基底的碳纳米管，在探针尖端具有尖锐的尖端。 通过在基板（图1（a）中的10和12）上沉积催化剂金属膜，在催化剂金属上沉积碳点（图1（b）中的14））来产生尖端或尖端阵列 蚀刻不被碳点掩蔽的催化剂金属膜（图1（c）），从催化剂金属膜除去碳点以暴露催化剂金属膜（图1（d）），并生长 催化剂膜上的碳纳米管探针尖端（图1（e）中的16））。 碳探针尖端可以是直的，有角度的或急剧弯曲的，并具有各种技术应用。