摘要:
A wiring substrate for mounting semiconductors is provided with an insulation film, wires formed in the insulation film, and a plurality of electrode pads that electrically connect to the wires through vias. The electrode pads are provided to have their surfaces exposed to both of the front surface and the rear surface of the insulation film, and at least a part of the side surface of the electrode pads is buried in the insulation film. The insulation film is formed by forming electrode pads on the respective two metallic plates, thereafter, laminating an insulation layer and wires on the respective metallic plates to cover the electrode pad, and adhering the insulation layers to each other for integration, and thereafter, removing the metallic plates.
摘要:
A wiring board has a base insulating film. The base insulating film has a thickness of 20 to 100 μm and is made of a heat-resistant resin which has a glass-transition temperature of 150° C. or higher and which contains reinforcing fibers made of glass or aramid. The base insulating film has the following physical properties (1) to (6) when an elastic modulus at a temperature of T° C. is given as DT (GPa) and a breaking strength at a temperature of T° C. is given as HT (MPa). (1) A coefficient of thermal expansion in the direction of thickness thereof is 90 ppm/K or less. (2) D23≧5 (3) D150≧2.5 (4) (D−65/D150)≦3.0 (5) H23≧140 (6) (H−65/H150)≦2.3.
摘要:
A wiring board has a base insulating film. The base insulating film has a thickness of 20 to 100 μm and is made of a heat-resistant resin which has a glass-transition temperature of 150° C. or higher and which contains reinforcing fibers made of glass or aramid. The base insulating film has the following physical properties (1) to (6) when an elastic modulus at a temperature of T° C. is given as DT (GPa) and a breaking strength at a temperature of T° C. is given as HT (MPa). (1) A coefficient of thermal expansion in the direction of thickness thereof is 90 ppm/K or less. (2) D23≧5 (3) D150≧2.5 (4) (D-65/D150)≦3.0 (5) H23≧140 (6) (H-65/H150)≦2.3
摘要:
A wiring substrate for mounting semiconductors is provided with an insulation film, wires formed in the insulation film, and a plurality of electrode pads that electrically connect to the wires through vias. The electrode pads are provided to have their surfaces exposed to both of the front surface and the rear surface of the insulation film, and at least a part of the side surface of the electrode pads is buried in the insulation film. The insulation film is formed by forming electrode pads on the respective two metallic plates, thereafter, laminating an insulation layer and wires on the respective metallic plates to cover the electrode pad, and adhering the insulation layers to each other for integration, and thereafter, removing the metallic plates.
摘要:
A wiring board has a base insulating film. The base insulating film has a thickness of 20 to 100 μm and is made of a heat-resistant resin which has a glass-transition temperature of 150° C. or higher and which contains reinforcing fibers made of glass or aramid. The base insulating film has the following physical properties (1) to (6) when an elastic modulus at a temperature of T° C. is given as DT (GPa) and a breaking strength at a temperature of T° C. is given as HT (MPa). (1) A coefficient of thermal expansion in the direction of thickness thereof is 90 ppm/K or less (2) D23≧5 (3) D150≧2.5 (4) (D−65/D150)≦3.0 (5) H23≧140 (6) (H−65/H150)≦2.3.
摘要:
A wiring substrate for mounting semiconductors is provided with an insulation film, wires formed in the insulation film, and a plurality of electrode pads that electrically connect to the wires through vias. The electrode pads are provided to have their surfaces exposed to both of the front surface and the rear surface of the insulation film, and at least a part of the side surface of the electrode pads is buried in the insulation film. The insulation film is formed by forming electrode pads on the respective two metallic plates, thereafter, laminating an insulation layer and wires on the respective metallic plates to cover the electrode pad, and adhering the insulation layers to each other for integration, and thereafter, removing the metallic plates.
摘要:
In a sheet material (1), a bonding layer (2) is provided, and then a high-strength layer (3) is laminated on the bonding layer (2). The bonding layer (2) is made of an epoxy resin being a thermosetting material. The high-strength layer (3) is made of polyimide, which is not softened at a thermosetting temperature of the epoxy resin and has a tensile rupture strength higher than that of the cured thermosetting material. Moreover, the polyimide has a tensile rupture strength of 100 MPa or higher at 23° C. and a tensile rupture elongation of 10% or higher at 23° C. Assuming that a tensile rupture strength at −65° C. is a and a tensile rupture strength at 150° C. is b, a ratio (a/b) is 2.5 or less.
摘要:
In a sheet material (1), a bonding layer (2) is provided, and then a high-strength layer (3) is laminated on the bonding layer (2). The bonding layer (2) is made of an epoxy resin being a thermosetting material. The high-strength layer (3) is made of polyimide, which is not softened at a thermosetting temperature of the epoxy resin and has a tensile rupture strength higher than that of the cured thermosetting material. Moreover, the polyimide has a tensile rupture strength of 100 MPa or higher at 23° C. and a tensile rupture elongation of 10% or higher at 23° C. Assuming that a tensile rupture strength at −65° C. is a and a tensile rupture strength at 150° C. is b, a ratio (a/b) is 2.5 or less.
摘要:
An oxide layer and a metal layer composed of a gold- or platinum-group metal are formed in the stated order on a substrate. A wiring body having a wiring layer, insulating layer, via, and electrode is formed on the metal layer. A semiconductor element is then connected as a flip chip via solder balls on the wiring body electrode, and underfill is introduced between the semiconductor element and the wiring body. Subsequently, a sealing resin layer is formed so as to cover the semiconductor element and the surface of the wiring body on which the semiconductor element is mounted, thus producing a semiconductor package. A high-density, detailed, thin semiconductor package can thereby be realized.
摘要:
A wiring board for mounting semiconductor device, includes at least a dielectric film 1; wirings formed in the dielectric film 1; a plurality of electrode pads provided at front and back surfaces of the dielectric film with their surfaces exposed and at least portions of lateral sides of them buried into the dielectric film; vias connecting the wirings and the electrode pads. At least one via connecting each other the wirings formed in the dielectric film includes second material different from first material forming the vias connecting the wirings and the electrode pads. The wiring board for mounting semiconductor device, is effective for an increase in terminals and finer pitch of terminal intervals due to an improvement in integration, performance or multi-function of semiconductor devices, can mount semiconductor devices especially on both sides of the board at a high density and high accuracy, and furthermore, is excellent in reliability as well.