公开(公告)号：US06548317B2

公开(公告)日：2003-04-15

申请号：US09925574

申请日：2001-08-09

申请人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

发明人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01L2100

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2205 ,  H01S5/227 ,  H01S5/4031 ,  H01L2924/00

摘要： The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.

摘要翻译： 本发明的目的是提供一种能够容易且准确地确保接触电极的连接的光电转换元件。在相同的基板上形成多个半导体层和p侧电极层叠的激光振荡器 。 通过绝缘层的每个开口形成在基底基板上的每个接触电极与每个p侧电极电连接。 并排配置的每个激光振荡器对应的开口以对准方向形成为交错构造。 每个接触电极与对应于每个开口的对准方向平行延伸。 因此，各开口之间的空间和在对准方向上并排设置的每个接触电极之间的间隔变宽，并且消除了对高精度位置匹配的要求。 因此，可以容易且准确地连接各p侧电极和各接触电极。

公开(公告)号：US06567445B1

公开(公告)日：2003-05-20

申请号：US09862559

申请日：2001-05-22

申请人： Hironobu Narui ,  Takehiro Taniguchi ,  Noriko Ueno ,  Nobukata Okano

发明人： Hironobu Narui ,  Takehiro Taniguchi ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01S500

CPC分类号： H01S5/4031 ,  H01S5/0425

摘要： A semiconductor emission element is disclosed including a plurality of the laser oscillator formed on the opposite side of a base of a substrate. P-side electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by increasing its thickness, are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.

摘要翻译： 公开了一种半导体发射元件，其包括形成在基底的相对侧上的多个激光振荡器。 P侧电极连接到激光振荡器，而具有通过增加其厚度具有辐射功能的提取电极连接到p侧电极。 提取电极覆盖两个激光振荡器，同时覆盖其中两个具有绝缘层的激光振荡器。 结果，即使基板设置在基板上，基板的发光部分的相对面朝向基板，也可以抑制发热部分的发热性能的劣化，同时可以抑制热干扰。

公开(公告)号：US06459714B1

公开(公告)日：2002-10-01

申请号：US09325451

申请日：1999-06-03

申请人： Hironobu Narui ,  Takehiro Taniguchi ,  Noriko Ueno ,  Nobukata Okano

发明人： Hironobu Narui ,  Takehiro Taniguchi ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01S500

CPC分类号： H01S5/4031 ,  H01S5/0425

摘要： It is an object to provide a semiconductor emission element which can promote radiation while being manufactured easily, and a method of manufacturing the same. In the semiconductor emission element of the invention, a plurality of the laser oscillator are formed on the opposite side of a base of a substrate which is supported by the base. P-sides electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by thickening its thickness are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.

摘要翻译： 本发明的目的是提供一种能够容易地制造能够促进辐射的半导体发光元件及其制造方法。 在本发明的半导体发光元件中，多个激光振荡器形成在由基座支撑的基板的基部的相反侧。 P侧电极连接到激光振荡器，而具有通过增厚其厚度具有辐射功能的提取电极连接到p侧电极。 提取电极覆盖两个激光振荡器，同时覆盖其中两个具有绝缘层的激光振荡器。 结果，即使基板设置在基板上，基板的发光部分的相对面朝向基板，也可以抑制发热部分的发热性能的劣化，同时可以抑制热干扰。

公开(公告)号：US06404790B1

公开(公告)日：2002-06-11

申请号：US09397073

申请日：1999-09-16

申请人： Hironobu Narui ,  Takehiro Taniguchi ,  Noriko Ueno ,  Nobukata Okano

发明人： Hironobu Narui ,  Takehiro Taniguchi ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01S500

CPC分类号： H01S5/227 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/2275 ,  H01S2301/18

摘要： A stripe portion extending in an crystal axis direction of a compound semiconductor substrate (1) in which a {100} crystalline surface is made a major surface is formed between stepped portions (41), a laser resonator is formed in the stripe portion, the width of the stripe portion at one end surface of the laser resonator is made broader in width compared with the central portion and another end surface of the laser resonator. Then, in accordance with the shape of the stripe portion, the stripe shape of an active layer of the laser resonator is made broader in width than the center portion and the other end surface, whereby a semiconductor laser of a narrow field pattern with a low threshold value is obtained.

摘要翻译： 在阶梯部分（41）之间形成有在{100}晶体表面形成主表面的化合物半导体衬底（1）的<011>晶轴方向上延伸的条纹部分，条形状 与激光谐振器的中心部分和另一个端面相比，激光谐振器的一个端面处的条纹部分的宽度被宽化。 然后，根据条形部分的形状，激光谐振器的有源层的条纹形状比中心部分和另一个端面宽，使得具有低的窄场图案的半导体激光器 获得阈值。

公开(公告)号：US06310381B1

公开(公告)日：2001-10-30

申请号：US09306183

申请日：1999-05-06

申请人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

发明人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01L310224

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2205 ,  H01S5/227 ,  H01S5/4031 ,  H01L2924/00

摘要： The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.

摘要翻译： 本发明的目的是提供一种能够容易且准确地确保接触电极的连接的光电转换元件。在相同的基板上形成多个半导体层和p侧电极层叠的激光振荡器 。 通过绝缘层的每个开口形成在基底基板上的每个接触电极与每个p侧电极电连接。 并排配置的每个激光振荡器对应的开口以对准方向形成为交错构造。 每个接触电极与对应于每个开口的对准方向平行延伸。 因此，各开口之间的空间和在对准方向上并排放置的每个接触电极之间的空间被加宽，并且消除了对高精度位置匹配的要求。 因此，可以容易且准确地连接各p侧电极和各接触电极。

公开(公告)号：US08138002B2

公开(公告)日：2012-03-20

申请号：US12461409

申请日：2009-08-11

申请人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

发明人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01L33/24 ,  H01S5/22 ,  H01S5/223 ,  H01S5/3202

摘要： A convex part formation method of forming a convex part in parallel with a direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θU; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θD (where θD≠θU).

摘要翻译： 在具有{100}面作为其顶面的背衬上形成与背衬的<110>方向平行的凸部的凸部形成方法包括：（a） 110>方向在背面; （b）蚀刻背衬以便形成凸起部分上层，其在与{110}面相对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长，并且侧面 其表面具有倾斜度; U; （c）进一步蚀刻背衬，以便形成凸起部分的下层，其在与{110}面对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长;以及 其侧表面具有倾斜度; D（其中＆amp; D;≠＆thetas; U）。

公开(公告)号：US20100019255A1

公开(公告)日：2010-01-28

申请号：US12311916

申请日：2008-05-20

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/00

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/3211 ,  H01S5/3432

摘要： There is provided a semiconductor light-emitting device capable of an attempt to further decrease a leakage current in a current-blocking layer and including (A) a light-emitting portion (20) composed of a first compound semiconductor layer (abbreviated as a layer hereinafter) (21) having a first conductivity type, an active layer (23), and a second layer (22) having a second conductivity type, and (B) a current-blocking layer (40) in contact with the side of the light-emitting portion and composed of a third layer (43) having the first conductivity type and a fourth layer (44) having the second conductivity type, wherein the impurity for imparting the first conductivity type to the first layer (21) includes an impurity in the first layer (21) at a substitution site which is uncompetitive with a substitution site of the impurity in the second layer (22), for imparting the second conductivity type to the second layer (22), and the impurity for imparting the first conductivity type to the third layer (43) includes an impurity in the third layer (43) at a substitution site which is competitive with a substitution site of the impurity in the fourth layer (44), for imparting the second conductivity type to the fourth layer (44).

摘要翻译： 提供一种半导体发光器件，其能够进一步减小电流阻挡层中的漏电流，并且包括（A）由第一化合物半导体层（简称为层）构成的发光部（20） （21），具有第一导电类型的有源层（23）和具有第二导电类型的第二层（22），和（B）与所述第二导电类型的侧面接触的电流阻挡层（40） 发光部分，并且由具有第一导电类型的第三层（43）和具有第二导电类型的第四层（44）组成，其中用于赋予第一层（21）的第一导电类型的杂质包括杂质 在与第二层（22）中的杂质的取代部位不具竞争力的取代位置处的第一层（21）中，用于将第二导电类型赋予第二层（22），并且用于赋予第一层 导电类型到th 第三层（43）在与第四层（44）中的杂质的取代位置竞争的取代位置处包含在第三层（43）中的杂质，用于将第二导电类型赋予第四层（44） ）。

公开(公告)号：US20070085093A1

公开(公告)日：2007-04-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US07196357B2

公开(公告)日：2007-03-27

申请号：US11192727

申请日：2005-07-29

申请人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

发明人： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC分类号： H01L27/15 ,  H01L29/16 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

摘要翻译： 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US08320421B2

公开(公告)日：2012-11-27

申请号：US12311916

申请日：2008-05-20

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/00

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/3211 ,  H01S5/3432

摘要： A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.

摘要翻译： 一种半导体发光器件，被配置为减小电流阻挡层中的漏电流，并且包括由具有第一导电类型的第一化合物半导体层，具有第二导电性的有源层和第二层构成的发光部 以及与发光部分侧接触并由具有第一导电类型的第三层和具有第二导电类型的第四层构成的电流阻挡层。