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    FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    场效应晶体管及其制造方法

    公开(公告)号：US20110254062A1

    公开(公告)日：2011-10-20

    申请号：US13042590

    申请日：2011-03-08

    申请人： Tatsuo Shimizu ,  Atsuhiro Kinoshita ,  Hirotaka Nishino

    发明人： Tatsuo Shimizu ,  Atsuhiro Kinoshita ,  Hirotaka Nishino

    IPC分类号： H01L29/772 ,  H01L21/8238 ,  H01L21/336

    CPC分类号： H01L21/823857 ,  H01L21/28185 ,  H01L21/3115 ,  H01L21/31155 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A field effect transistor which can operate at a low threshold value includes: an n-type semiconductor region; a source region and a drain region separately formed in the n-type semiconductor region; a first insulating film formed in the semiconductor region between the source region and the drain region and containing silicon and oxygen; a second insulating film formed on the first insulating film and containing at least one material selected from Hf, Zr, and Ti and oxygen; and a gate electrode formed on the second insulating film. Ge is doped in an interface region including an interface between the first insulating film and the second insulating film, and an area density of the Ge has a peak on a first insulating film side in the interface region.

    摘要翻译： 可以以低阈值工作的场效应晶体管包括：n型半导体区域; 分别形成在所述n型半导体区域中的源极区域和漏极区域; 形成在源极区域和漏极区域之间并且含有硅和氧的半导体区域中的第一绝缘膜; 形成在所述第一绝缘膜上并且包含选自Hf，Zr和Ti中的至少一种材料和氧的第二绝缘膜; 以及形成在所述第二绝缘膜上的栅电极。 Ge掺杂在包括第一绝缘膜和第二绝缘膜之间的界面的界面区域中，Ge的面密度在界面区域的第一绝缘膜侧具有峰值。

    COMPLEMENTARY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    COMPLEMENTARY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    补充半导体器件及其制造方法

    公开(公告)号：US20090114995A1

    公开(公告)日：2009-05-07

    申请号：US12200599

    申请日：2008-08-28

    申请人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

    发明人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

    IPC分类号： H01L27/08 ,  H01L21/3205

    CPC分类号： H01L21/823857 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/785

    摘要： A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.

    摘要翻译： 互补半导体器件包括半导体衬底，形成在半导体衬底的表面上的第一半导体区域，形成在半导体衬底的离开第一半导体区域的表面上的第二半导体区域，具有第一栅极的n-MIS晶体管 形成在第一半导体区域上的包括La和Al的绝缘膜和形成在栅极绝缘膜上的第一栅电极和形成在第二半导体区上的具有包括La和Al的第二栅极绝缘膜的p-MIS晶体管， 以及形成在所述栅极绝缘膜上的第二栅电极，所述第二栅极绝缘膜中的原子密度比Al / La大于所述第一栅极绝缘膜中的原子密度比Al / La。

    Method for manufacturing semiconductor device
    8.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07767538B2

    公开(公告)日：2010-08-03

    申请号：US11507007

    申请日：2006-08-21

    申请人： Hirotaka Nishino ,  Koichi Kato

    发明人： Hirotaka Nishino ,  Koichi Kato

    IPC分类号： H01L21/26 ,  H01L27/14 ,  H01L27/30

    CPC分类号： H01L21/3211 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02345 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/3185

    摘要： It is made possible to form a silicon nitride film, an aluminum oxide film and a transition metal high-k insulation film of high quality. A manufacturing method includes: forming an insulation film having at least one kind of bonds selected out of silicon-nitrogen bonds, aluminum-oxygen bonds, transition metal-oxygen-silicon bonds, transition metal-oxygen-aluminum bonds, and transition metal-oxygen bonds on either a film having a semiconductor as a main component or a semiconductor substrate, and irradiating the insulation film with pulse infrared light having a wavelength corresponding to a maximum intensity in a wavelength region depending upon the insulation film and having a wavelength absorbed by the insulation film.

    摘要翻译： 可以形成高质量的氮化硅膜，氧化铝膜和过渡金属高k绝缘膜。 一种制造方法包括：形成具有选自硅 - 氮键，铝 - 氧键，过渡金属 - 氧 - 硅键，过渡金属 - 氧 - 铝键和过渡金属 - 氧中的至少一种键的绝缘膜 在具有半导体作为主要成分的膜或半导体衬底上的膜上键合，并且用绝缘膜照射具有与波长区域中的最大强度相对应的波长的脉冲红外光，该波长区域取决于绝缘膜并且具有由 绝缘膜。