公开(公告)号：US20110217811A1

公开(公告)日：2011-09-08

申请号：US13035037

申请日：2011-02-25

申请人： Tetsuhiro TANAKA ,  Tomokazu YOKOI ,  Koji DAIRIKI

发明人： Tetsuhiro TANAKA ,  Tomokazu YOKOI ,  Koji DAIRIKI

IPC分类号： H01L31/0352 ,  H01L21/20 ,  H01L21/336

CPC分类号： H01L31/1136 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/14692 ,  H01L31/03685 ,  Y02E10/545 ,  Y02E10/548

摘要： A method for manufacturing a microcrystalline semiconductor film having high crystallinity is provided. A method for manufacturing a semiconductor device which has favorable electric characteristics with high productivity is provided. After a first microcrystalline semiconductor film is formed over a substrate, treatment for flattening a surface of the first microcrystalline semiconductor film is performed. Then, treatment for removing an amorphous semiconductor region on a surface side of the flattened first microcrystalline semiconductor film is performed so that a second microcrystalline semiconductor film having high crystallinity and flatness is formed. After that, a third microcrystalline semiconductor film is formed over the second microcrystalline semiconductor film.

摘要翻译： 提供了一种制造具有高结晶度的微晶半导体膜的方法。 提供了一种具有良好的电特性，高生产率的半导体装置的制造方法。 在基板上形成第一微晶半导体膜之后，进行使第一微晶半导体膜的表面变平的处理。 然后，进行用于除去平坦化的第一微晶半导体膜的表面侧的非晶半导体区域的处理，使得形成具有高结晶度和平坦度的第二微晶半导体膜。 之后，在第二微晶半导体膜上形成第三微晶半导体膜。

公开(公告)号：US20110053358A1

公开(公告)日：2011-03-03

申请号：US12860175

申请日：2010-08-20

申请人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

发明人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/20

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US20100327281A1

公开(公告)日：2010-12-30

申请号：US12820201

申请日：2010-06-22

申请人： Miyako NAKAJIMA ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Erika KATO ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI

发明人： Miyako NAKAJIMA ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Erika KATO ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/6675 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

摘要翻译： 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。

公开(公告)号：US20110305950A1

公开(公告)日：2011-12-15

申请号：US13153503

申请日：2011-06-06

申请人： Kazutaka KURIKI ,  Kiyofumi OGINO ,  Tomokazu YOKOI ,  Makoto ISHIKAWA ,  Toshihiko TAKEUCHI

发明人： Kazutaka KURIKI ,  Kiyofumi OGINO ,  Tomokazu YOKOI ,  Makoto ISHIKAWA ,  Toshihiko TAKEUCHI

IPC分类号： H01M4/64 ,  H01G9/042 ,  H01M10/04

CPC分类号： H01G11/26 ,  H01M4/134 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  H01M2004/025 ,  Y02E60/122 ,  Y02E60/13

摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.

摘要翻译： 提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。 在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。 通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。 因此，可以提高放电容量，并且可以提高循环特性。

公开(公告)号：US20120189929A1

公开(公告)日：2012-07-26

申请号：US13345827

申请日：2012-01-09

申请人： Tomokazu YOKOI ,  Shuhei Yoshitomi ,  Kensuke Yoshizumi

发明人： Tomokazu YOKOI ,  Shuhei Yoshitomi ,  Kensuke Yoshizumi

IPC分类号： H01M8/06 ,  F02B43/08 ,  B01J19/00

CPC分类号： H01M8/065 ,  C01B3/0031 ,  C01B3/06 ,  C01B2203/066 ,  H01M8/0606 ,  Y02E60/327 ,  Y02E60/364

摘要： A hydrogen generating element which can supply hydrogen efficiently and stably, is safe, and has low environmental load is provided. Further, a hydrogen generation device to which the hydrogen generating element is applied is provided. Furthermore, a power generation device and a driving device to each of which the hydrogen generation device is applied are provided. A hydrogen generating element in which a needle-like or dome-like silicon microstructure is formed over a base may be used and reacted with water, whereby hydrogen is efficiently generated. The hydrogen generating element may be applied to a hydrogen generation device. The hydrogen generation device may be applied to a power generation device and a driving device.

摘要翻译： 能够高效，稳定地供给氢的氢发生元件是安全的，并且具有低的环境负荷。 此外，提供了应用氢生成元件的氢生成装置。 此外，提供了施加氢生成装置的发电装置和驱动装置。 可以使用其中在基底上形成针状或圆顶状硅微结构的氢发生元件，并与水反应，从而有效地产生氢。 氢生成元件可以应用于氢生成装置。 氢发生装置可以应用于发电装置和驱动装置。

公开(公告)号：US20090267066A1

公开(公告)日：2009-10-29

申请号：US12422577

申请日：2009-04-13

申请人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Tomokazu YOKOI ,  Makoto FURUNO

发明人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Tomokazu YOKOI ,  Makoto FURUNO

IPC分类号： H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/03685 ,  H01L31/03762 ,  H01L31/1816 ,  Y02E10/545 ,  Y02E10/548

摘要： To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.

摘要翻译： 提供具有改善的光电转换特性和成本竞争力的光电转换装置。 包括半导体结的光电转换装置具有使针状晶体在杂质半导体层上生长的半导体层。 杂质半导体层由微晶半导体形成，并且包括赋予一种导电类型的杂质。 通过将稀释气体（通常为硅烷）的流量设定为沉积时的半导体源气体（通常为氢）的流量的1倍至6倍，将非晶半导体层沉积在微晶半导体层上。 因此，使得在膜的沉积方向即从微晶半导体层到非晶半导体层的方向上渐缩的三维形状的晶体生长。

公开(公告)号：US20130062600A1

公开(公告)日：2013-03-14

申请号：US13604937

申请日：2012-09-06

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

摘要： The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

摘要翻译： 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

公开(公告)号：US20120100677A1

公开(公告)日：2012-04-26

申请号：US13343734

申请日：2012-01-05

申请人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

发明人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

IPC分类号： H01L21/336 ,  H01L21/205

CPC分类号： H01L21/02532 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.

摘要翻译： 提供了一种以高质量生产率制造微晶半导体层的技术。 在等离子体CVD装置的反应室中，上部电极和下部电极彼此平行地设置。 在上部电极中形成中空部，上部电极具有形成在上部电极的与下部电极相对的面上形成的多个孔的喷淋板。 衬底设置在下电极上。 含有沉积气体和氢气的气体从淋浴板通过上部电极的中空部分供应到反应室，并且稀有气体从不同于上部电极的部分供应到反应室。 因此，向上部电极提供高频电力以产生等离子体，从而在基板上形成微晶半导体层。

公开(公告)号：US20090134397A1

公开(公告)日：2009-05-28

申请号：US12275840

申请日：2008-11-21

申请人： Tomokazu YOKOI ,  Yujiro Sakurada

发明人： Tomokazu YOKOI ,  Yujiro Sakurada

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66772

摘要： A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.

摘要翻译： 在衬底上形成非单晶半导体层，然后在非单晶半导体层的一部分上形成单晶半导体层。 因此，可以使用非单晶半导体层和需要高速操作的区域的半导体元件（例如，在显示装置中的像素区域）上形成需要大面积的区域的半导体元件（例如，显示装置中的像素区域） 可以使用单晶半导体层形成显示装置中的驱动电路区域）。

公开(公告)号：US20120313152A1

公开(公告)日：2012-12-13

申请号：US13488791

申请日：2012-06-05

申请人： Tomokazu YOKOI ,  Yasumasa YAMANE

发明人： Tomokazu YOKOI ,  Yasumasa YAMANE

IPC分类号： H01L29/78 ,  H01L21/20

CPC分类号： H01L29/78609 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/20 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation region, and a source and drain regions which are provided so that the channel formation region is interposed therebetween and have lower resistance than the channel formation region. The channel formation region and the source and drain regions each include a crystalline region.

摘要翻译： 包括氧化物半导体并且能够进行高速操作的晶体管以及晶体管的制造方法。 此外，包括晶体管的高可靠性半导体器件和制造半导体器件的方法。 半导体器件包括具有沟道形成区域的氧化物半导体层以及被设置为使得沟道形成区域介于其间并具有比沟道形成区域更低的电阻的源极和漏极区域。 沟道形成区域和源极区域和漏极区域各自包括结晶区域。