公开(公告)号：US20110193087A1

公开(公告)日：2011-08-11

申请号：US13023601

申请日：2011-02-09

申请人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Tomokazu YOKOI ,  Makoto FURUNO

发明人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Tomokazu YOKOI ,  Makoto FURUNO

IPC分类号： H01L31/105

CPC分类号： H01L31/03685 ,  H01L31/03762 ,  H01L31/1816 ,  Y02E10/545 ,  Y02E10/548

摘要： To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.

摘要翻译： 提供具有改善的光电转换特性和成本竞争力的光电转换装置。 包括半导体结的光电转换装置具有使针状晶体在杂质半导体层上生长的半导体层。 杂质半导体层由微晶半导体形成，并且包括赋予一种导电类型的杂质。 通过将稀释气体（通常为硅烷）的流量设定为沉积时的半导体源气体（通常为氢）的流量的1倍至6倍，将非晶半导体层沉积在微晶半导体层上。 因此，使得在膜的沉积方向即从微晶半导体层到非晶半导体层的方向上渐缩的三维形状的晶体生长。

公开(公告)号：US20090267066A1

公开(公告)日：2009-10-29

申请号：US12422577

申请日：2009-04-13

申请人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Tomokazu YOKOI ,  Makoto FURUNO

发明人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Tomokazu YOKOI ,  Makoto FURUNO

IPC分类号： H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/03685 ,  H01L31/03762 ,  H01L31/1816 ,  Y02E10/545 ,  Y02E10/548

摘要： To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.

摘要翻译： 提供具有改善的光电转换特性和成本竞争力的光电转换装置。 包括半导体结的光电转换装置具有使针状晶体在杂质半导体层上生长的半导体层。 杂质半导体层由微晶半导体形成，并且包括赋予一种导电类型的杂质。 通过将稀释气体（通常为硅烷）的流量设定为沉积时的半导体源气体（通常为氢）的流量的1倍至6倍，将非晶半导体层沉积在微晶半导体层上。 因此，使得在膜的沉积方向即从微晶半导体层到非晶半导体层的方向上渐缩的三维形状的晶体生长。

公开(公告)号：US20110053358A1

公开(公告)日：2011-03-03

申请号：US12860175

申请日：2010-08-20

申请人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

发明人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/20

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US20090047758A1

公开(公告)日：2009-02-19

申请号：US12186001

申请日：2008-08-05

申请人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Makoto FURUNO ,  Satoshi TORIUMI ,  Yasuhiro JINBO ,  Koji DAIRIKI

发明人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Makoto FURUNO ,  Satoshi TORIUMI ,  Yasuhiro JINBO ,  Koji DAIRIKI

IPC分类号： H01L21/336

CPC分类号： H01L29/04 ,  H01L21/0262 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78696

摘要： In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.

摘要翻译： 在形成底栅极薄膜晶体管的情况下，进行通过等离子体CVD法在栅极绝缘膜上形成微晶半导体膜的步骤，以及在微晶半导体膜上形成非晶半导体膜的步骤。 在形成微晶半导体膜的步骤中，反应室中的压力设定为10-5Pa以下，基板温度设定在120℃〜220℃的范围内，等离子体由 引入氢气和硅气体，使氢等离子体作用于形成在栅极绝缘膜的表面上的反应产物，以在进行成膜的同时进行除去。 此外，通过施加VHF频带的第一高频电力，VHF频带的第二高频电力彼此叠加而产生等离子体。

公开(公告)号：US20110059562A1

公开(公告)日：2011-03-10

申请号：US12944841

申请日：2010-11-12

申请人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Satoshi TORIUMI ,  Makoto FURUNO ,  Yasuhiro JINBO ,  Koji DAIRIKI ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Sachiaki TEDUKA ,  Satoshi TORIUMI ,  Makoto FURUNO ,  Yasuhiro JINBO ,  Koji DAIRIKI ,  Hideaki KUWABARA

IPC分类号： H01L21/336

CPC分类号： C23C16/515 ,  C23C16/509 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.

摘要翻译： 本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。 在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体 在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。 此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

公开(公告)号：US20120033156A1

公开(公告)日：2012-02-09

申请号：US13198203

申请日：2011-08-04

申请人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Toshiyuki ISA

发明人： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Toshiyuki ISA

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/133615 ,  G02F2001/133618 ,  G02F2201/58

摘要： A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor.

摘要翻译： 一种液晶显示装置，包括一对基板，在一对基板之间包括液晶元件的像素，设置在该对基板的外侧上的点亮部分，在该对基板之间的第一偏振构件和 照明部分，设置在闪电部分外部的反射构件，在与第一偏振构件相对的一侧上设置有一对基板的第二偏振构件，以及第一光学传感器和第二光学传感器。 第一光学传感器具有检测外部光的照度的功能，第二光学传感器具有检测从像素部发射的偏振光的色调的功能。 闪电部分可以发射具有预定波长的光，这取决于由第二光学传感器检测的像素部分的色调。

公开(公告)号：US20120129329A1

公开(公告)日：2012-05-24

申请号：US13362049

申请日：2012-01-31

申请人： Taketomi ASAMI ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Shunpei YAMAZAKI

发明人： Taketomi ASAMI ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/28

CPC分类号： H01L27/127 ,  H01L21/32136 ,  H01L21/67207 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

摘要： The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.

摘要翻译： 提供本发明是为了消除由于形成TFT的每个膜的界面的污染物杂质引起的污染，这是降低TFT的可靠性的主要因素。 通过连接洗涤室和成膜室，可以在从洗涤步骤到成膜步骤的时间内不将TFT暴露于空气中进行成膜，并且可以保持形成的每个膜的界面的清洁度 TFT。

公开(公告)号：US20110220905A1

公开(公告)日：2011-09-15

申请号：US13045840

申请日：2011-03-11

申请人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Satoshi TORIUMI

发明人： Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Satoshi TORIUMI

IPC分类号： H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/66742 ,  H01L29/78687 ,  H01L29/78696

摘要： In an inverted staggered thin film transistor, a microcrystalline silicon film and a silicon carbide film are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the silicon carbide film is formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity.

摘要翻译： 在倒置的交错薄膜晶体管中，在栅绝缘膜和用作源极布线和漏极布线的布线之间设置微晶硅膜和碳化硅膜。 在栅极绝缘膜侧形成微晶硅膜，在布线侧形成碳化硅膜。 以这种方式，可以以高生产率制造具有良好电特性的半导体器件。

公开(公告)号：US20090305469A1

公开(公告)日：2009-12-10

申请号：US12467454

申请日：2009-05-18

申请人： Sho KATO ,  Satoshi TORIUMI ,  Fumito ISAKA ,  Hideto OHNUMA

发明人： Sho KATO ,  Satoshi TORIUMI ,  Fumito ISAKA ,  Hideto OHNUMA

IPC分类号： H01L21/762 ,  H01L21/336

CPC分类号： H01L21/84 ,  H01L21/76251

摘要： A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.

摘要翻译： 至少包括绝缘层，第一电极和第一杂质半导体层的叠层设置在支撑基板上; 在所述第一杂质半导体层上形成添加有赋予一种导电类型的杂质元素的第一半导体层; 在与第一半导体层不同的条件下，在第一半导体层上形成添加有赋予一种导电型的杂质元素的第二半导体层; 通过固相生长法提高第一半导体层的结晶度和第二半导体层的结晶度，形成第二杂质半导体层; 赋予一种导电类型的杂质元素和赋予不同于一种导电类型的导电类型的杂质元素添加到第二杂质半导体层; 并且经由栅极绝缘层形成栅极电极层。

公开(公告)号：US20120083078A1

公开(公告)日：2012-04-05

申请号：US13236837

申请日：2011-09-20

申请人： Satoshi TORIUMI ,  Shinobu FURUKAWA

发明人： Satoshi TORIUMI ,  Shinobu FURUKAWA

IPC分类号： H01L21/336

CPC分类号： H01L29/66765 ,  H01L27/1251 ,  H01L29/04 ,  H01L29/78648 ,  H01L29/78696

摘要： To provide a method for manufacturing a transistor which has little variation in characteristics and favorable electric characteristics. A gate insulating film is formed over a gate electrode; a semiconductor layer including a microcrystalline semiconductor is formed over the gate insulating film; an impurity semiconductor layer is formed over the semiconductor layer; a mask is formed over the impurity semiconductor layer, and then the semiconductor layer and the impurity semiconductor layer are etched with use of the mask to form a semiconductor stacked body; the mask is removed and then the semiconductor stacked body is exposed to plasma generated in an atmosphere containing a rare gas to form a barrier region on a side surface of the semiconductor stacked body; and a wiring over the impurity semiconductor layer of the semiconductor stacked body is formed.

摘要翻译： 提供一种几何特性变化小，电气特性好的晶体管的制造方法。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成包含微晶半导体的半导体层; 在半导体层上形成杂质半导体层; 在杂质半导体层上形成掩模，然后使用掩模蚀刻半导体层和杂质半导体层，以形成半导体层叠体; 去除掩模，然后将半导体层叠体暴露于在含有稀有气体的气氛中产生的等离子体，以在半导体层叠体的侧面上形成阻挡区域; 并且形成半导体层叠体的杂质半导体层上的布线。