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    Process for manufacture of solvent for coal liquefaction
    1.
    发明授权
    Process for manufacture of solvent for coal liquefaction 失效
    煤液化溶剂的制造工艺

    公开(公告)号：US4326946A

    公开(公告)日：1982-04-27

    申请号：US157837

    申请日：1980-06-09

    申请人： Tsukasa Chikata ,  Yoshihiko Sunami ,  Keiichi Sasaki ,  Kunihiko Nishioka

    发明人： Tsukasa Chikata ,  Yoshihiko Sunami ,  Keiichi Sasaki ,  Kunihiko Nishioka

    IPC分类号： C10G1/06 ,  C10G1/04 ,  C10G7/00

    CPC分类号： C10G1/042

    摘要： A process of producing a solvent useful in coal liquefaction which includes separating the heavy liquid produced from the liquefaction of coal into a fraction boiling at 200.degree. to 210.degree. C., a fraction boiling at 211.degree. to 230.degree. C., and a fraction boiling at not less than 231.degree. subjecting the fraction boiling at 211.degree. to 230.degree. C. to a hydrogenation treatment to produce a hydrogenated fraction, mixing the hydrogenated fraction with the fraction boiling at 200.degree. to 210.degree. C. to form a resultant mixture, and mixing a portion of the resultant mixture with a portion of the fraction boiling at not less than 231.degree. C. Alternately, the solvent is produced from the heavy liquid by separating it into a fraction boiling at 200.degree. C. to 210.degree. C., a fraction boiling at 211.degree. C. to 230.degree. C., a fraction boiling at 231.degree. C. to 250.degree. C., a fraction boiling at 251.degree. C. to 350.degree. C. and a fraction boiling at not less than 351.degree. C., subjecting each of the middle three fractions to a hydrogenation treatment to form three hydrogenated fractions, mixing the three hydrogenated fractions with the fraction boiling at 200.degree. C. to 210.degree. C. to form a resultant mixture, and mixing the resultant mixture with a portion of the fraction boiling at not less than 351.degree. C.

    摘要翻译： 一种生产可用于煤液化的溶剂的方法，其包括将从液化产生的重液体分离成沸腾温度为200至210℃的馏分，沸点为211至230℃的馏分，以及馏分 沸腾不低于231℃，使沸点为211〜230℃的馏分进行氢化处理，生成氢化馏分，将氢化馏分与沸点为200〜210℃的馏分混合，形成混合物 并将所得混合物的一部分与沸点不低于231℃的部分混合。或者，通过将溶液分离成在200℃至210℃沸腾的馏分，将该溶剂从重质液体中制备 ，在211℃至230℃沸腾的馏分，沸点在231℃至250℃的馏分，沸点在251℃至350℃的馏分和沸点不低于的馏分 比351℃高，每个中间三分 进行氢化处理以形成三个氢化馏分，将三个氢化馏分与200℃至210℃的馏分混合以形成所得混合物，并将所得混合物与一部分沸点不同的馏分混合 小于351℃

    Process for manufacture of solvent for coal liquefaction
    2.
    发明授权
    Process for manufacture of solvent for coal liquefaction 失效
    煤液化溶剂的制造工艺

    公开(公告)号：US4303498A

    公开(公告)日：1981-12-01

    申请号：US157451

    申请日：1980-06-06

    申请人： Tsukasa Chikata ,  Yoshihiko Sunami ,  Keiichi Sasaki ,  Kunihiko Nishioka

    发明人： Tsukasa Chikata ,  Yoshihiko Sunami ,  Keiichi Sasaki ,  Kunihiko Nishioka

    IPC分类号： C10G1/06 ,  C10G1/04 ,  C10G45/44 ,  C10G65/08 ,  C10G7/00

    CPC分类号： C10G45/44 ,  C10G1/042 ,  C10G65/08

    摘要： A solvent useful in coal liquefaction is obtained by separating the heavy liquid resulting from coal liquefaction into a fraction boiling at temperatures of between 200.degree. to 210.degree. C., a fraction boiling at temperatures between 211.degree. to 250.degree. C., and a fraction boiling at not less than 250.degree. C., subjecting the fraction boiling at between 211.degree. C. to 250.degree. C. to two hydrogenation treatments, mixing the hydrogenated product with the fraction boiling at between 200.degree. to 210.degree. C. which optionally has been hydrogenated to form a resultant mixture and mixing a portion of the resultant mixture with the fraction boiling at not less than 250.degree. C. which has been optionally hydrogenated.

    摘要翻译： 用于煤液化的溶剂是通过将由煤液化产生的重液体分离成在200-210℃的温度下沸腾的馏分，在211-250℃之间沸腾的馏分和一个馏分 沸腾不低于250℃，将沸点在211℃至250℃的馏分进行两次氢化处理，将氢化产物与沸点在200至210℃之间的馏分混合，任选具有 被氢化以形成所得混合物，并将所得混合物的一部分与沸点不低于250℃的馏分混合，将其任选氢化。

    Process for refining coal-based heavy oils
    3.
    发明授权
    Process for refining coal-based heavy oils 失效
    煤基重油精炼工艺

    公开(公告)号：US4402824A

    公开(公告)日：1983-09-06

    申请号：US247332

    申请日：1981-03-25

    申请人： Yoshihiko Sunami ,  Keiichi Sasaki ,  Tohru Iwahashi

    发明人： Yoshihiko Sunami ,  Keiichi Sasaki ,  Tohru Iwahashi

    IPC分类号： C10C1/18 ,  C10G21/00 ,  C10G21/16 ,  C10C3/00

    CPC分类号： C10G21/003 ,  C10C1/18 ,  C10G21/16

    摘要： A coal-based heavy oil is refined so as to remove quinoline insolubles and provide a hydrocarbon product suitable for making carbon stocks by heating to remove the volatile components which have boiling points ranging from the initial boiling point of the heavy oil to up to at least 200.degree. C. and at most 270.degree. C., thereby leaving a residual coal-based heavy oil, the residual coal-based heavy oil is mixed with a ketone-type solvent having a boiling point less than 200.degree. C. to form an insoluble precipitate (including quinoline insolubles) and a supernatent, the supernatent is treated to recover the ketone-type solvent, and the remaining hydrocarbon mixture is easily processed by vacuum distillation to produce a hydrocarbon product suitable for making carbon stocks.

    摘要翻译： 精炼煤基重油以除去喹啉不溶物，并提供适于通过加热制备碳原料的烃产物，以除去沸点为重油至沸点至少至少至少 200℃，最多270℃，留下残留的煤基重油，将剩余的煤基重油与沸点低于200℃的酮型溶剂混合，形成 不溶解的沉淀物（包括喹啉不溶物）和上清液，处理上清液以回收酮型溶剂，并且通过真空蒸馏容易地处理剩余的烃混合物以产生适于制备碳储存的烃产物。

    ARRAY-TYPE PHOTO MODULE
    4.
    发明申请
    ARRAY-TYPE PHOTO MODULE 有权
    阵列型照片模块

    公开(公告)号：US20120257855A1

    公开(公告)日：2012-10-11

    申请号：US13410131

    申请日：2012-03-01

    申请人： Yuto Yamashita ,  Keiichi Sasaki ,  Etsuo Ogino ,  Yasuaki Tamura ,  Yuji Akahori ,  Yuichi Suzuki

    发明人： Yuto Yamashita ,  Keiichi Sasaki ,  Etsuo Ogino ,  Yasuaki Tamura ,  Yuji Akahori ,  Yuichi Suzuki

    IPC分类号： G02B6/32

    CPC分类号： G02B6/425 ,  G02B6/4215

    摘要： PROBLEMAn object of the present invention is to easily and inexpensively manufacture an array-type photo module and, in addition, coexist high-density array and low crosstalk.SOLUTIONThe present invention provides an array-type photo module M including a filter 31, which, in each channel, transmits therethrough a portion of emitting light from an incident optical fiber 11 on the opposite side of a gradient-index lens array 2 and reflects another portion of the emitting light from the incident optical fiber 11 toward the gradient-index lens array 2, and a light-shielding member 32 (33) which is arranged on the opposite side of the gradient-index lens array 2 of the filter 31 so as to be spaced from the filter 31 and, in each channel, has an opening 34 (35) passing therethrough transmitted light from the filter 31 on the opposite side of the filter 31.

    摘要翻译： 发明内容本发明的目的在于容易且廉价地制造阵列型照相模块，另外共存高密度阵列和低串扰。 解决方案本发明提供一种阵列型光模块M，其包括滤光器31，滤光器31在每个通道中透过其中一部分发射光，该入射光纤11位于梯度折射率透镜阵列2的相对侧并反射 来自入射光纤11的发光的另一部分朝向梯度折射率透镜阵列2，以及设置在滤光器31的梯度折射率透镜阵列2的相反侧的遮光部件32（33） 与过滤器31隔开，并且在每个通道中具有穿过过滤器31的相反侧上的来自过滤器31的透射光的开口34（35）。

    THROUGH-HOLE FORMING METHOD, INKJET HEAD, AND SILICON SUBSTRATE
    5.
    发明申请
    THROUGH-HOLE FORMING METHOD, INKJET HEAD, AND SILICON SUBSTRATE 失效
    通孔形成方法，喷头和硅基板

    公开(公告)号：US20090073228A1

    公开(公告)日：2009-03-19

    申请号：US12197499

    申请日：2008-08-25

    申请人： Keiichi Sasaki ,  Yukihiro Hayakawa

    发明人： Keiichi Sasaki ,  Yukihiro Hayakawa

    IPC分类号： B41J2/015 ,  H01L21/00 ,  H01L23/58

    CPC分类号： H01L21/308 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2202/13 ,  H01L29/06

    摘要： A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.

    摘要翻译： 通孔形成方法包括以下步骤：在硅衬底（101）的第一表面中形成在要形成通孔的区域周围的第一杂质区域（102a），第一杂质区域（102）更高 在所述硅衬底（101）的深度方向上与所述第一杂质区（102a）相邻的位置形成第二杂质区（102b），所述第二杂质区（102b） 杂质浓度高于第一杂质区（102a），在第一表面上形成蚀刻停止层（103），形成在硅衬底（101）的第二表面上具有开口的蚀刻掩模层（104） 并且蚀刻硅衬底（101），直到至少蚀刻停止层（103）经由开口露出。

    Method for producing circuit substrate
    8.
    发明申请
    Method for producing circuit substrate 失效
    电路基板的制造方法

    公开(公告)号：US20050031996A1

    公开(公告)日：2005-02-10

    申请号：US10910271

    申请日：2004-08-04

    申请人： Keiichi Sasaki ,  Masato Kamiichi ,  Yukihiro Hayakawa ,  Ershad Chowdhury

    发明人： Keiichi Sasaki ,  Masato Kamiichi ,  Yukihiro Hayakawa ,  Ershad Chowdhury

    IPC分类号： B41J2/14 ,  B41J2/16 ,  G03F7/00 ,  H05K1/09 ,  H05K1/16 ,  H05K3/02 ,  H05K3/06 ,  H05K3/28

    CPC分类号： H05K1/167 ,  B41J2/14072 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1643 ,  B41J2/1646 ,  H05K1/09 ,  H05K3/06 ,  H05K3/067 ,  H05K2201/0317 ,  H05K2203/0361

    摘要： In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.

    摘要翻译： 为了通过利用这种电路基板的布线边缘部分中的保护层和防空穴膜提供令人满意的阶梯覆盖的电路基板，本发明提供一种制造电路基板的方法， 在基板的绝缘表面上，多个元件各自包括电阻层和在所述电阻层上以预定间隔形成的一对电极，包括在电阻层上形成铝电极布线层的步骤，步骤 通过干蚀刻将电极配线层隔离成各元件，以及通过含有与配线金属形成络合物的磷酸，硝酸和螯合剂的蚀刻液将电极配线形成为锥形截面的工序。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06376894B1

    公开(公告)日：2002-04-23

    申请号：US09525107

    申请日：2000-03-14

    申请人： Hiroshi Ikegami ,  Keiichi Sasaki ,  Nobuo Hayasaka

    发明人： Hiroshi Ikegami ,  Keiichi Sasaki ,  Nobuo Hayasaka

    IPC分类号： H01L2900

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a semiconductor device in which redundancy fuses formed in an upper layer wiring region can be cut without damaging an underlying Si substrate or adjacent regions. The semiconductor device comprises a lower layer wiring formed within an interlayer insulating film on the Si substrate, and an upper layer metal wiring made of Al, Cu or the like, formed above the lower layer wiring and connected thereto through a via metal, wherein the redundancy fuses are formed in the same wiring layer as the upper layer metal wiring. For cutting a fuse by irradiating with a laser having a wavelength in a range of 1,000 to 1,100 nm and a beam diameter D (&mgr;m), the fuse may be designed to have a film thickness T (&mgr;m) and a width W (&mgr;m) which satisfy T≦(−0.15 (D+2&sgr;)+0.46) exp (2W), where &sgr; (&mgr;m) is an alignment accuracy of the center of the laser beam to the center of the fuse, with the result that the fuse formed in the same wiring layer as the upper layer metal wiring can be cut without damaging the Si substrate, an adjacent fuse and the upper layer metal wiring.

    摘要翻译： 提供了一种半导体器件，其中可以切割形成在上层布线区域中的冗余熔丝而不损坏下面的Si衬底或相邻区域。 半导体器件包括形成在Si衬底上的层间绝缘膜内的下层布线和由Al，Cu等制成的上层金属布线，其形成在下层布线的上方并通过通孔金属连接， 冗余熔丝形成在与上层金属布线相同的布线层中。 为了通过用波长在1000至1100nm的波长和光束直径D（母体）的激光照射来切割熔丝，可以将熔丝设计成具有膜厚T（mum）和宽度W（mum） 其满足T <=（ - 0.15（D + 2sigma）+0.46）exp（2W），其中σ（mum）是激光束的中心对熔丝的中心的对准精度，结果是熔丝 形成在与上层金属布线相同的布线层中，不会损坏Si基板，相邻的熔丝和上层金属布线。