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    Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
    2.
    发明授权
    Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 失效
    在GaAs基半导体本体上制造包含氧化物层的制品的方法

    公开(公告)号：US06271069B1

    公开(公告)日：2001-08-07

    申请号：US09122558

    申请日：1998-07-24

    申请人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

    发明人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

    IPC分类号： H01L2976

    CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66522 ,  H01L29/78 ,  H01L33/44 ,  H01S5/028

    摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.

    摘要翻译： 公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1） 。 该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。 在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。 该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。 该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零 选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。

    MATERIALS AND METHODS FOR DETECTING TOXINS, PATHOGENS AND OTHER BIOLOGICAL MATERIALS
    4.
    发明申请
    MATERIALS AND METHODS FOR DETECTING TOXINS, PATHOGENS AND OTHER BIOLOGICAL MATERIALS 审中-公开
    用于检测毒素，病原体和其他生物材料的材料和方法

    公开(公告)号：US20110117669A1

    公开(公告)日：2011-05-19

    申请号：US12664022

    申请日：2009-11-06

    申请人： Fan Ren ,  Stephen John Pearton ,  Tanmay Lele

    发明人： Fan Ren ,  Stephen John Pearton ,  Tanmay Lele

    IPC分类号： H01L29/20 ,  H01L29/737 ,  G01N33/566

    CPC分类号： G01N27/3275 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/56911 ,  G01N33/56983 ,  G01N2333/33

    摘要： Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs.

    摘要翻译： 本发明的实施方案提供可用于检测毒素，病原体和其他生物材料的结合分子官能化的高电子迁移率晶体管（HEMT）。 在具体实施方案中，抗体功能化的HEMT可用于检测肉毒杆菌毒素。 抗体可以通过固定化的巯基乙酸锚定在HEMT的金层门区。 本发明的检测器的实施例可以用于基于AlGaN / GaN HEMT的现场可部署电子生物学应用中。

    Carbon nanotube films for hydrogen sensing
    6.
    发明申请
    Carbon nanotube films for hydrogen sensing 审中-公开
    用于氢气感测的碳纳米管膜

    公开(公告)号：US20060213251A1

    公开(公告)日：2006-09-28

    申请号：US11089311

    申请日：2005-03-24

    申请人： Andrew Rinzler ,  Jennifer Sippel-Oakley ,  Byoung Kang ,  Hung-Ta Wang ,  Fan Ren ,  Stephen Pearton

    发明人： Andrew Rinzler ,  Jennifer Sippel-Oakley ,  Byoung Kang ,  Hung-Ta Wang ,  Fan Ren ,  Stephen Pearton

    IPC分类号： G01N7/00

    CPC分类号： G01N27/127 ,  G01N33/005

    摘要： A multi-layer H2 sensor includes a carbon nanotube layer, and a ultra-thin metal or metal alloy layer in contact with the nanotube layer. The ultra-thin metal or metal alloy layer is preferably from 10 to 50 angstroms thick. An electrical resistance of the layered sensor increases upon exposure to H2 and can provide detection of hydrogen gas (H2) down to at least 10 ppm, The metal or metal alloy layer is preferably selected from the group consisting of Ni, Pd and Pt, or mixtures thereof. Multi-layered sensors and can be conveniently operated at room temperature.

    摘要翻译： 多层H 2传感器包括碳纳米管层和与纳米管层接触的超薄金属或金属合金层。 超薄金属或金属合金层的厚度优选为10〜50埃。 层状传感器的电阻在暴露于H 2 2时增加，并且可以将氢气（H 2 O 2）的检测降低至至少10ppm。金属或金属合金 层优选选自Ni，Pd和Pt，或其混合物。 多层传感器，可方便地在室温下运行。

    SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS
    8.
    发明申请
    SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS 有权
    传感器使用高电子移动晶体管

    公开(公告)号：US20110068372A1

    公开(公告)日：2011-03-24

    申请号：US12992002

    申请日：2009-03-20

    申请人： Fan Ren ,  Stephen John Pearton ,  Tanmay Lele ,  Hung-Ta Wang ,  Byoung-Sam Kang

    发明人： Fan Ren ,  Stephen John Pearton ,  Tanmay Lele ,  Hung-Ta Wang ,  Byoung-Sam Kang

    IPC分类号： H01L29/778

    CPC分类号： G01N27/414

    摘要： Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

    摘要翻译： 本发明的实施例包括具有InGaP / GaAs HEMT的AlGaAs / GaAs高电子迁移率晶体管（HEMT）的传感器。 InAlAs / InGaAs HEMT，AlGaAs / InGaAs PHEMT，InAlAs / InGaAs PHEMT，Sb基HEMT或基于InAs的HEMT，HEMT在门表面具有目标受体的功能化。 目标受体允许敏感性用于检测乳腺癌，前列腺癌，肾损伤，氯化物，葡萄糖，金属或pEI的目标（或底物），当溶液与传感器接触时，HEMI产生信号。 解决方案可以是血液，唾液，尿液，呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

    Method of making in-containing III/V semiconductor devices
    10.
    发明授权
    Method of making in-containing III/V semiconductor devices 失效
    制造内置III / V半导体器件的方法

    公开(公告)号：US5527425A

    公开(公告)日：1996-06-18

    申请号：US505047

    申请日：1995-07-21

    申请人： William S. Hobson ,  John Lopata ,  Fan Ren

    发明人： William S. Hobson ,  John Lopata ,  Fan Ren

    IPC分类号： H01L29/73 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/331 ,  H01L21/338 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812 ,  H01S5/00 ,  H01L21/20

    CPC分类号： H01L21/30621

    摘要： In-containing III/V semiconductor materials (e.g., InGaP) can be dry etched in BCl.sub.3 in ECR apparatus. We have discovered that addition of N.sub.2 to the BCl.sub.3 can result in substantially higher etch rate (e.g., more than 50% higher). Etching is substantially without incubation period, and the resulting surface can be very smooth (e.g., RMS roughness less than 5 nm, even less than 2.5 nm). Exemplarily, the novel etching step is used in the manufacture of a InGaP/GaAs transistor.

    摘要翻译： 含In III / V半导体材料（例如，InGaP）可以在ECR设备中在BCl3中进行干蚀刻。 我们已经发现，向BCl 3中添加N2可导致显着更高的蚀刻速率（例如，高于50％以上）。 蚀刻基本上没有潜伏期，并且所得表面可以非常光滑（例如，RMS粗糙度小于5nm，甚至小于2.5nm）。 示例性地，新颖的蚀刻步骤用于制造InGaP / GaAs晶体管。