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    Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture
    1.
    发明申请
    Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture 审中-公开
    具有改进的针对集成电路应用的无机抗反射涂层材料的蚀刻选择性的多孔二氧化硅电介质以及制造方法

    公开(公告)号：US20050136687A1

    公开(公告)日：2005-06-23

    申请号：US10741272

    申请日：2003-12-19

    申请人： Victor Lu ,  Bo Li ,  Deling Zhou ,  Roger Leung ,  Paul Apen

    发明人： Victor Lu ,  Bo Li ,  Deling Zhou ,  Roger Leung ,  Paul Apen

    IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/31695 ,  H01L21/7682 ,  H01L2221/1047

    摘要： A composition comprising a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A method of producing a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A silicon containing pre-polymer is provided, which is capable of forming a film having a dielectric constant of about 2.8 or less. It is then combined with a porogen, and a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles, to thereby form a composition. A layer of the composition is coated on to a substrate, crosslinked to form a gelled film, and heated to remove substantially all of the porogen and to thereby produce a nanoporous silica dielectric film of the invention.

    摘要翻译： 一种组合物，其包含基于纳米多孔硅介电膜的总体积具有约30％或更小的空隙体积并且具有约2.2或更小的介电常数的纳米多孔硅介电膜。 基于纳米多孔硅介电膜的总体积，并且具有约2.2或更小的介电常数，制备具有约30％或更小的空隙体积的纳米多孔二氧化硅电介质膜的方法。 提供含硅预聚物，其能够形成介电常数为约2.8或更小的膜。 然后将其与致孔剂和选自鎓化合物和亲核试剂的无金属离子的催化剂组合，从而形成组合物。 将一层组合物涂布在基材上，交联以形成凝胶膜，并加热以除去基本上所有的致孔剂，从而制备本发明的纳米孔硅石介电膜。

    Low dielectric constant materials and methods of preparation thereof
    4.
    发明授权
    Low dielectric constant materials and methods of preparation thereof 有权
    低介电常数材料及其制备方法

    公开(公告)号：US07307137B2

    公开(公告)日：2007-12-11

    申请号：US10466651

    申请日：2001-10-18

    申请人： Kreisler Lau ,  Feng Quan Liu ,  Paul Apen ,  Boris Korolev ,  Emma Brouk ,  Ruslan Zherebin ,  David Nalewajek ,  Roger Leung

    发明人： Kreisler Lau ,  Feng Quan Liu ,  Paul Apen ,  Boris Korolev ,  Emma Brouk ,  Ruslan Zherebin ,  David Nalewajek ,  Roger Leung

    IPC分类号： C08G63/78

    CPC分类号： C08G61/12 ,  C07C13/615 ,  C07C13/64 ,  C07C15/54 ,  C07C17/10 ,  C07C17/269 ,  C07C2603/74 ,  C07C2603/90 ,  C07F7/0805 ,  C08F238/00 ,  C08G61/02 ,  H01L2924/0002 ,  C07C23/46 ,  C07C25/22 ,  H01L2924/00

    摘要： The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.

    摘要翻译： 本发明涉及低介电聚合物以及生产这些低介电常数聚合物，介电材料和层以及电子元件的方法。 在本发明的一个方面，提供其中单体具有核心结构和多个臂的热固性单体的异构体混合物，并且热固性单体的异构体混合物聚合，其中聚合包括乙炔基 其位于单体的至少一个臂中。 在本发明主题的另一方面，形成旋涂低介电常数材料，其具有具有芳族部分和第一反应性基团的第一主链和具有芳族部分和第二反应性基团的第二主链，其中第一 并且第二主链在交联反应中通过第一和第二反应性基团交联，优选不含另外的交联剂，并且其中具有至少八个（8）原子的笼结构共价结合至第一和第二主链中的至少一个。

    LOW TEMPERATURE CURABLE MATERIALS FOR OPTICAL APPLICATIONS
    6.
    发明申请
    LOW TEMPERATURE CURABLE MATERIALS FOR OPTICAL APPLICATIONS 有权
    用于光学应用的低温可固化材料

    公开(公告)号：US20060027803A1

    公开(公告)日：2006-02-09

    申请号：US10910673

    申请日：2004-08-03

    申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen

    发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen

    IPC分类号： H01L29/04 ,  H01L21/84

    CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

    摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.

    摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种具有至少一个有机基团的含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用该组合物涂覆基材以在基材上形成膜，（c）通过在约250℃或更低的温度下加热该组合物约30分钟或更短时间来交联该组合物，以产生基本上裂纹 该硅聚合物的有机基团与SiO基的重量比为约0.15:1或更高，并且含硅聚合物膜的场击穿电压为约2.5MV / cm，或者 在约400nm至约700nm的范围内的光的透明度为约95％或更高。

    Organic compositions
    7.
    发明申请
    Organic compositions 审中-公开
    有机成分

    公开(公告)号：US20070155997A1

    公开(公告)日：2007-07-05

    申请号：US10536884

    申请日：2003-12-31

    申请人： Bo Li ,  Kreisler Lau ,  Paul Apen

    发明人： Bo Li ,  Kreisler Lau ,  Paul Apen

    IPC分类号： C07C13/615

    CPC分类号： C07C17/10 ,  C07C13/615 ,  C07C13/64 ,  C07C17/269 ,  C07C2603/74 ,  C07C2603/90 ,  C08G61/06 ,  C07C23/46 ,  C07C25/22

    摘要： Compositions and methods of forming and using those compositions are provided herein where the composition comprises at least one oligomer or polymer of Formula I wherein E is a cage compound; each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; A is substituted or unsubstituted aryl with substituted or unsubstituted arylalkynyl group (substituents include hydrogen, halogen, alkyl, phenyl or substituted aryl; and aryl includes phenyl, biphenyl, naphthyl, terphenyl, anthracenyl, polyphenylene, polyphenylene ether, or substituted aryl); h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1.

    摘要翻译： 本文提供了组合物和形成和使用这些组合物的方法，其中组合物包含至少一种式I的低聚物或聚合物，其中E是笼形化合物; 每个Q相同或不同，选自芳基，支链芳基和取代芳基，其中取代基包括氢，卤素，烷基，芳基，取代的芳基，杂芳基，芳基醚，烯基，炔基，烷氧基，羟基烷基，羟基芳基，羟基烯基， 羟基炔基，羟基或羧基; A是取代或未取代的具有取代或未取代的芳基炔基的芳基（取代基包括氢，卤素，烷基，苯基或取代的芳基;芳基包括苯基，联苯基，萘基，三联苯基，蒽基，聚亚苯基，聚苯醚或取代的芳基）。 h为0〜10; 我是从0到10; j为0〜10; w为0或1。

    Electrical properties of shallow trench isolation materials via high temperature annealing in the presence of reactive gases
    9.
    发明申请
    Electrical properties of shallow trench isolation materials via high temperature annealing in the presence of reactive gases 审中-公开
    浅沟槽隔离材料的电性能在反应气体存在下通过高温退火

    公开(公告)号：US20060051929A1

    公开(公告)日：2006-03-09

    申请号：US10934068

    申请日：2004-09-03

    申请人： Lei Jin ,  Victor Lu ,  Wenya Fan ,  Paul Apen

    发明人： Lei Jin ,  Victor Lu ,  Wenya Fan ,  Paul Apen

    IPC分类号： H01L21/76

    CPC分类号： H01L21/02129 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76224

    摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits having improved electrical properties. A silica dielectric film is formed on a substrate (a) preparing a composition comprising a silicon containing pre-polymer, a metal-ion-free catalyst, and optionally water; (b) coating a substrate with the composition to form a film, (c) crosslinking the composition by first heating the composition in a nitrogen atmosphere at a temperature of from about 750° C. to about 850° C. for from about 30 minutes to about 120 minutes; and thereafter heating the composition in an oxygen atmosphere at a temperature of from about 850° C. to about 1000° C. for from about 30 minutes to about 120 minutes, effective to produce a substantially crack-free, and substantially void-free silica dielectric film having a density of from about 1.8 to about 2.3 g/ml, a dielectric constant of about 4.0 or less, a breakdown voltage of about 3 MV/cm or more.

    摘要翻译： 本发明涉及半导体器件制造，更具体地涉及在具有改进的电性能的集成电路中形成高密度浅沟槽隔离结构的方法和材料。 在基材（a）上形成二氧化硅电介质膜，制备包含含硅预聚物，不含金属离子的催化剂和任选的水的组合物; （b）用组合物涂覆基材以形成膜，（c）通过在氮气气氛中在约750℃至约850℃的温度下首先加热该组合物约30分钟来交联该组合物 至约120分钟; 然后在氧气氛中在约850℃至约1000℃的温度下加热组合物约30分钟至约120分钟，有效地产生基本上无裂纹且基本上无空隙的二氧化硅 绝缘膜的密度为约1.8至约2.3g / ml，介电常数为约4.0或更小，击穿电压为约3MV / cm以上。

    Low temperature curable materials for optical applications
    10.
    发明申请
    Low temperature curable materials for optical applications 有权
    用于光学应用的低温可固化材料

    公开(公告)号：US20060035419A1

    公开(公告)日：2006-02-16

    申请号：US11192352

    申请日：2005-07-29

    申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen ,  Peter Smith ,  Jinghong Chen

    发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen ,  Peter Smith ,  Jinghong Chen

    IPC分类号： H01L21/84 ,  H01L21/31

    CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

    摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.

    摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用所述组合物涂覆基材以在基材上形成膜，（c）通过加热使组合物交联以产生基本上无裂纹且基本上无空隙的硅聚合物膜，其具有在 约400nm至约800nm约95％或更多。