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    Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture
    2.
    发明申请
    Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture 审中-公开
    具有改进的针对集成电路应用的无机抗反射涂层材料的蚀刻选择性的多孔二氧化硅电介质以及制造方法

    公开(公告)号：US20050136687A1

    公开(公告)日：2005-06-23

    申请号：US10741272

    申请日：2003-12-19

    申请人： Victor Lu ,  Bo Li ,  Deling Zhou ,  Roger Leung ,  Paul Apen

    发明人： Victor Lu ,  Bo Li ,  Deling Zhou ,  Roger Leung ,  Paul Apen

    IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/31695 ,  H01L21/7682 ,  H01L2221/1047

    摘要： A composition comprising a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A method of producing a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A silicon containing pre-polymer is provided, which is capable of forming a film having a dielectric constant of about 2.8 or less. It is then combined with a porogen, and a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles, to thereby form a composition. A layer of the composition is coated on to a substrate, crosslinked to form a gelled film, and heated to remove substantially all of the porogen and to thereby produce a nanoporous silica dielectric film of the invention.

    摘要翻译： 一种组合物，其包含基于纳米多孔硅介电膜的总体积具有约30％或更小的空隙体积并且具有约2.2或更小的介电常数的纳米多孔硅介电膜。 基于纳米多孔硅介电膜的总体积，并且具有约2.2或更小的介电常数，制备具有约30％或更小的空隙体积的纳米多孔二氧化硅电介质膜的方法。 提供含硅预聚物，其能够形成介电常数为约2.8或更小的膜。 然后将其与致孔剂和选自鎓化合物和亲核试剂的无金属离子的催化剂组合，从而形成组合物。 将一层组合物涂布在基材上，交联以形成凝胶膜，并加热以除去基本上所有的致孔剂，从而制备本发明的纳米孔硅石介电膜。

    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
    4.
    发明授权
    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof 有权
    用于通孔填充和光刻应用的抗反射涂层及其制备方法

    公开(公告)号：US08992806B2

    公开(公告)日：2015-03-31

    申请号：US13217706

    申请日：2011-08-25

    申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

    发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

    IPC分类号： C09K3/00 ,  G03F7/11 ,  C09D183/04 ,  G03F7/075 ,  C09D183/08 ,  G03F7/09

    CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    Antireflective Coatings for Via Fill and Photolithography Applications and Methods of Preparation Thereof
    5.
    发明申请
    Antireflective Coatings for Via Fill and Photolithography Applications and Methods of Preparation Thereof 审中-公开
    用于通孔填充和光刻的抗反射涂层及其制备方法

    公开(公告)号：US20120001135A1

    公开(公告)日：2012-01-05

    申请号：US13217706

    申请日：2011-08-25

    申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodin ,  Victor Lu ,  Roger Leung

    发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodin ,  Victor Lu ,  Roger Leung

    IPC分类号： C09K3/00

    CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
    6.
    发明申请
    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof 有权
    用于通孔填充和光刻应用的抗反射涂层及其制备方法

    公开(公告)号：US20050171277A1

    公开(公告)日：2005-08-04

    申请号：US10717028

    申请日：2003-11-18

    申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Victor Lu ,  Roger Leung ,  Mark Fradkin ,  Makarem Hussein ,  Michael Goodner

    发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Victor Lu ,  Roger Leung ,  Mark Fradkin ,  Makarem Hussein ,  Michael Goodner

    IPC分类号： C08G20060101 ,  C08L83/04 ,  C09D183/04 ,  C09D183/08 ,  G03F7/09

    CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    Low dielectric constant materials and methods of preparation thereof
    7.
    发明授权
    Low dielectric constant materials and methods of preparation thereof 有权
    低介电常数材料及其制备方法

    公开(公告)号：US07307137B2

    公开(公告)日：2007-12-11

    申请号：US10466651

    申请日：2001-10-18

    申请人： Kreisler Lau ,  Feng Quan Liu ,  Paul Apen ,  Boris Korolev ,  Emma Brouk ,  Ruslan Zherebin ,  David Nalewajek ,  Roger Leung

    发明人： Kreisler Lau ,  Feng Quan Liu ,  Paul Apen ,  Boris Korolev ,  Emma Brouk ,  Ruslan Zherebin ,  David Nalewajek ,  Roger Leung

    IPC分类号： C08G63/78

    CPC分类号： C08G61/12 ,  C07C13/615 ,  C07C13/64 ,  C07C15/54 ,  C07C17/10 ,  C07C17/269 ,  C07C2603/74 ,  C07C2603/90 ,  C07F7/0805 ,  C08F238/00 ,  C08G61/02 ,  H01L2924/0002 ,  C07C23/46 ,  C07C25/22 ,  H01L2924/00

    摘要： The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.

    摘要翻译： 本发明涉及低介电聚合物以及生产这些低介电常数聚合物，介电材料和层以及电子元件的方法。 在本发明的一个方面，提供其中单体具有核心结构和多个臂的热固性单体的异构体混合物，并且热固性单体的异构体混合物聚合，其中聚合包括乙炔基 其位于单体的至少一个臂中。 在本发明主题的另一方面，形成旋涂低介电常数材料，其具有具有芳族部分和第一反应性基团的第一主链和具有芳族部分和第二反应性基团的第二主链，其中第一 并且第二主链在交联反应中通过第一和第二反应性基团交联，优选不含另外的交联剂，并且其中具有至少八个（8）原子的笼结构共价结合至第一和第二主链中的至少一个。

    Interlayer adhesion promoter for low k materials
    10.
    发明申请
    Interlayer adhesion promoter for low k materials 审中-公开
    用于低k材料的层间粘合促进剂

    公开(公告)号：US20050173803A1

    公开(公告)日：2005-08-11

    申请号：US10517575

    申请日：2002-09-20

    申请人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

    发明人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

    IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31695 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

    摘要翻译： 本发明涉及多层电介质结构的制造以及包括这些结构的半导体器件和集成电路。 本发明的结构通过将多孔电介质层通过中间粘合促进介电层粘附到基本上无孔的覆盖层来制备。 制备多层电介质结构，其具有孔隙率为约10％以上的多孔介电层; b）多孔电介质层上的粘附促进介电层，其孔隙率为约10％或更小; 和在粘附促进电介质层上的基本上无孔的覆盖层。