Ordered nanoscale domains by infiltration of block copolymers
    2.
    发明授权
    Ordered nanoscale domains by infiltration of block copolymers 有权
    有序的纳米级域通过嵌段共聚物的渗透

    公开(公告)号:US09487600B2

    公开(公告)日:2016-11-08

    申请号:US13209190

    申请日:2011-08-12

    IPC分类号: C08F8/42

    摘要: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic features with patterned nanostructures defined by the configuration of the microdomain.

    摘要翻译: 通过渗透具有多个自组装的周期性聚合物微畴的嵌段共聚物支架来制备可调谐无机图案化纳米尺度的方法。 该方法可以使用与原子层沉积(ALD)相关的顺序渗透合成(SIS)。 该方法包括选择配置为与限定微区的共聚物单元选择性反应但与该共聚物的另一聚合物单元基本上不反应的金属前体。 选择性地在微区上形成可调谐的无机特征以形成金属前体和共反应物的杂化有机/无机复合材料。 可以任选地除去有机组分以获得由微区的构型定义的图案化纳米结构的无机特征。

    ATOMIC LAYER DEPOSITION OF SUPER-CONDUCTING NIOBIUM SILICIDE
    3.
    发明申请
    ATOMIC LAYER DEPOSITION OF SUPER-CONDUCTING NIOBIUM SILICIDE 审中-公开
    超导硅酸钠的原子层沉积

    公开(公告)号:US20120219824A1

    公开(公告)日:2012-08-30

    申请号:US13036952

    申请日:2011-02-28

    IPC分类号: B05D5/12 B32B15/00

    摘要: A method of preparing a superconducting thin film of niobium silicide using atomic layer deposition (ALD) where the superconducting critical temperature of the film is controllable by modulating the thickness of the thin film. The film is formed by exposing a substrate within an ALD reactor to alternating exposures of a niobium halide (NbQx) and a reducing precursor, for example, disilane (Si2H6) or silane (SiH4). A number of ALD cycles are performed to obtain the film thickness and establish the desired superconducting critical temperature between 0.4 K and 3.1 K.

    摘要翻译: 使用原子层沉积(ALD)制备硅化铌超导薄膜的方法,其中膜的超导临界温度可通过调节薄膜的厚度来控制。 通过将ALD反应器内的基板暴露于铌卤化物(NbQ x)和还原性前体例如乙硅烷(Si 2 H 6)或硅烷(SiH 4)的交替曝光来形成膜。 执行多个ALD循环以获得膜厚度并建立在0.4K和3.1K之间的所需超导临界温度。

    Ordered Nanoscale Domains by Infiltration of Block Copolymers
    7.
    发明申请
    Ordered Nanoscale Domains by Infiltration of Block Copolymers 有权
    嵌段共聚物渗透的有序纳米领域

    公开(公告)号:US20120046421A1

    公开(公告)日:2012-02-23

    申请号:US13209190

    申请日:2011-08-12

    IPC分类号: C08F8/42

    摘要: A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

    摘要翻译: 通过渗透具有多个自组装的周期性聚合物微畴的嵌段共聚物支架来制备可调谐无机图案化纳米尺度的方法。 该方法可以使用与原子层沉积(ALD)相关的顺序渗透合成(SIS)。 该方法包括选择配置为与限定微区的共聚物单元选择性反应但与该共聚物的另一聚合物单元基本上不反应的金属前体。 选择性地在微区上形成可调谐的无机特征以形成金属前体和共反应物的杂化有机/无机复合材料。 可以任选地除去有机组分以获得具有由微区域的构型限定的图案化纳米结构的无机特征。