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26 条记录 (耗时 0.032 秒)

    Fastening module
    1.
    发明授权
    Fastening module 有权
    紧固模块

    公开(公告)号：US08797733B2

    公开(公告)日：2014-08-05

    申请号：US13463811

    申请日：2012-05-03

    申请人： Wei-Chih Lai ,  Hsin-Hung Hsiao

    发明人： Wei-Chih Lai ,  Hsin-Hung Hsiao

    IPC分类号： G06F1/16

    CPC分类号： G06F1/187

    摘要： A fastening module for fastening a data storage device is provided. The data storage device includes first and second positioning apertures. A frame of the fastening module includes a retaining hole, and first and second positioning holes. The data storage device is slidably received in the frame. A securing member of the fastening module includes a main body, a pivot member, and a pin. The main body includes a pivot hole pivotally connected by the pivot member. A securing piece of the pivot member passes through the retaining hole and rotates relative to the main body to fasten the securing member to the frame. When the securing piece passes through the retaining hole, the pin passes through either the first or second positioning hole and inserts into either the first or second positioning aperture to fasten the data storage device at different positions.

    摘要翻译： 提供了用于紧固数据存储装置的紧固模块。 数据存储装置包括第一和第二定位孔。 紧固模块的框架包括保持孔，以及第一和第二定位孔。 数据存储装置可滑动地接收在框架中。 紧固模块的固定构件包括主体，枢转构件和销。 主体包括由枢轴构件枢转地连接的枢轴孔。 枢转构件的固定件穿过保持孔并相对于主体旋转，以将固定构件紧固到框架上。 当固定件穿过保持孔时，销穿过第一或第二定位孔，插入第一或第二定位孔中，以将数据存储装置固定在不同位置。

    Fastening module
    2.
    发明授权
    Fastening module 有权
    紧固模块

    公开(公告)号：US08730661B2

    公开(公告)日：2014-05-20

    申请号：US13463829

    申请日：2012-05-04

    申请人： Wei-Chih Lai ,  Hsin-Hung Hsiao

    发明人： Wei-Chih Lai ,  Hsin-Hung Hsiao

    IPC分类号： H05K7/00

    CPC分类号： G11B33/124 ,  G11B33/08

    摘要： A fastening module for fastening a data storage device is provided. A fastening trough is formed at a lower surface of the data storage device. The fastening module includes a frame bracket, a fastening member, and a buckling member. The frame bracket is used for carrying the data storage device. The frame bracket includes a lower frame and two side frames. The side frames are connected to two sides of the lower frame. The lower frame includes a clamping hole. The fastening member is disposed at the clamping hole and inserted into a fastening trough, so as to prevent the data storage device from moving. The buckling member is movably disposed at the side frames to buckle an upper surface of the data storage device.

    摘要翻译： 提供了用于紧固数据存储装置的紧固模块。 紧固槽形成在数据存储装置的下表面。 紧固模块包括框架支架，紧固构件和弯曲构件。 框架支架用于承载数据存储设备。 框架支架包括下框架和两个侧框架。 侧框架连接到下框架的两侧。 下框架包括夹紧孔。 紧固构件设置在夹紧孔处并插入紧固槽中，以防止数据存储装置移动。 屈曲构件可移动地设置在侧框架处以扣紧数据存储装置的上表面。

    All-In-One Desktop Computer
    3.
    发明申请
    All-In-One Desktop Computer 审中-公开
    一体机台式电脑

    公开(公告)号：US20110085288A1

    公开(公告)日：2011-04-14

    申请号：US12898899

    申请日：2010-10-06

    申请人： Wei-Chih Lai ,  Yao-Jen Chang ,  Wei-Ting Lai ,  Chia-Fen Tsou ,  Hsin-Hung Hsiao

    发明人： Wei-Chih Lai ,  Yao-Jen Chang ,  Wei-Ting Lai ,  Chia-Fen Tsou ,  Hsin-Hung Hsiao

    IPC分类号： G06F1/16

    CPC分类号： G06F1/20 ,  G06F1/184 ,  G06F1/187

    摘要： An all-in-one desktop computer includes a casing, a display module, a motherboard, a storage device, and a heat dissipating device. The display module is contained in the casing. The display module has a display panel exposed to the casing. The storage device is located at a center-of-gravity position of the all-in-one desktop computer. The motherboard, the storage device, and the heat dissipating device are contained in the casing and are disposed at the back of the display module without overlap. Therefore, the all-in-one desktop computer has smaller volume and a better heat dissipation effect via special disposition of the motherboard, the storage device, and the heat dissipating device.

    摘要翻译： 一体式台式计算机包括壳体，显示模块，母板，存储装置和散热装置。 显示模块包含在外壳中。 显示模块具有暴露于壳体的显示面板。 存储设备位于一体式台式计算机的重心位置。 主板，存储装置和散热装置包含在壳体中，并且不重叠地布置在显示模块的后部。 因此，通过主板，存储装置和散热装置的特殊配置，一体式台式计算机具有较小的体积和更好的散热效果。

    Light emitting diode, optoelectronic device and method of fabricating the same
    6.
    发明授权
    Light emitting diode, optoelectronic device and method of fabricating the same 有权
    发光二极管，光电器件及其制造方法

    公开(公告)号：US07833809B2

    公开(公告)日：2010-11-16

    申请号：US12117746

    申请日：2008-05-09

    申请人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

    发明人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

    IPC分类号： H01L21/00

    CPC分类号： H01L33/12 ,  H01L33/007

    摘要： A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.

    摘要翻译： 提供了包括基板，应变降低种子层，外延层，第一电极和第二电极的发光二极管结构。 具有多个簇的应变减少种子层设置在基板上，并且簇的材料选自氮化铝，氮化镁和氮化铟。 外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。 第一电极设置在暴露的第一型掺杂半导体层上并与其电连接。 第二电极设置在第二类型掺杂半导体层上并与其电连接。

    LIGHT EMITTING DIODE, OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    LIGHT EMITTING DIODE, OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管，光电器件及其制造方法

    公开(公告)号：US20080315226A1

    公开(公告)日：2008-12-25

    申请号：US12117746

    申请日：2008-05-09

    申请人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

    发明人： Cheng-Huang Kuo ,  Wei-Chih Lai ,  Chi-Wen Kuo

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/12 ,  H01L33/007

    摘要： A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.

    摘要翻译： 提供了包括基板，应变降低种子层，外延层，第一电极和第二电极的发光二极管结构。 具有多个簇的应变减少种子层设置在基板上，并且簇的材料选自氮化铝，氮化镁和氮化铟。 外延层包括第一掺杂半导体层，发光层和第二掺杂半导体层。 第一电极设置在暴露的第一型掺杂半导体层上并与其电连接。 第二电极设置在第二类型掺杂半导体层上并与其电连接。

    Method for manufacturing high efficiency light-emitting diodes
    8.
    发明申请
    Method for manufacturing high efficiency light-emitting diodes 有权

    公开(公告)号：US20060094138A1

    公开(公告)日：2006-05-04

    申请号：US11030790

    申请日：2005-01-07

    申请人： Wei-Chih Lai ,  Jinn-Kong Sheu ,  Chi-Ming Tsai ,  Cheng-Ta Kuo

    发明人： Wei-Chih Lai ,  Jinn-Kong Sheu ,  Chi-Ming Tsai ,  Cheng-Ta Kuo

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  H01L33/02 ,  H01L33/14 ,  H01L33/20

    摘要： A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active layer are stacked on the substrate in sequence. A first P-type cladding layer is formed on the active layer. Next, a growth-interruption step is performed, and a catalyst is introduced to form a plurality of nuclei sites on a surface of the first P-type cladding layer. A second P-type cladding layer is formed on the first P-type cladding layer according to the nuclei sites, so that the second P-type cladding layer has a surface with a plurality of mesa hillocks. Then, a contact layer is formed on the second P-type cladding layer. Subsequently, a transparent electrode is formed on the contact layer.

    Photodetector
    10.
    发明授权
    Photodetector 有权
    光电检测器

    公开(公告)号：US07238972B2

    公开(公告)日：2007-07-03

    申请号：US11129787

    申请日：2005-05-16

    申请人： Ming-Lum Lee ,  Wei-Chih Lai ,  Shih-Chang Shei

    发明人： Ming-Lum Lee ,  Wei-Chih Lai ,  Shih-Chang Shei

    IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/732

    CPC分类号： B82Y20/00 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/105 ,  Y02E10/544

    摘要： A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n++-type III-V compound semiconductor layer located on a first portion of the first n-type III-V compound semiconductor layer with a second portion of the first n-type III-V compound semiconductor layer exposed, a p-type III-V compound semiconductor layer located on the n++-type compound semiconductor layer, an undoped III-V compound semiconductor layer located on the p-type III-V compound semiconductor layer, a second n-type III-V compound semiconductor layer located on the undoped III-V compound semiconductor layer, a conductive transparent oxide layer located on the second n-type III-V compound semiconductor layer, a first electrode located on a portion of the conductive transparent oxide layer, and a second electrode located on a portion of the second portion of the first n-type III-V compound semiconductor layer.

    摘要翻译： 描述光电检测器。 光电检测器由基板，位于基板上的第一n型III-V族化合物半导体层，位于第一部分上的n + 第一n型III-V族化合物半导体层，第一n型III-V族化合物半导体层的第二部分露出，p型III-V族化合物半导体层位于第n + 位于p型III-V族化合物半导体层上的未掺杂的III-V族化合物半导体层，位于未掺杂的III-V族化合物半导体层上的第二n型III-V族化合物半导体层， 位于第二n型III-V族化合物半导体层上的导电透明氧化物层，位于导电透明氧化物层的一部分上的第一电极，以及位于第一n-型III-V化合物半导体层的第二部分的一部分上的第二电极， III-V族化合物半导体层。