公开(公告)号：US08395269B2

公开(公告)日：2013-03-12

申请号：US12656616

申请日：2010-02-04

申请人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi ,  Yoichiro Kurita ,  Masahiro Komuro ,  Satoshi Matsui

发明人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi ,  Yoichiro Kurita ,  Masahiro Komuro ,  Satoshi Matsui

IPC分类号： H01L21/50

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/562 ,  H01L23/642 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2223/6622 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10155 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.

摘要翻译： 一种制造半导体器件的方法包括形成互连部件，将具有半导体衬底的第一半导体芯片以面向下的方式安装在互连部件上，在互连部件上形成树脂层以覆盖第一半导体的侧表面 芯片，使第一半导体芯片和树脂层变薄，在第一半导体芯片的背面上形成无机绝缘层，以与背面接触并延伸到树脂层上，并形成通孔，从而形成通孔 以穿透无机绝缘层和半导体衬底。

公开(公告)号：US08114766B1

公开(公告)日：2012-02-14

申请号：US12498664

申请日：2009-07-07

申请人： Koji Soejima ,  Yoichiro Kurita ,  Masaya Kawano

发明人： Koji Soejima ,  Yoichiro Kurita ,  Masaya Kawano

IPC分类号： H01L21/4763

CPC分类号： H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/15788 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2924/00

摘要： Method of manufacturing a semiconductor device, which achieves a reduction in manufacturing cost and prevents, a damage on the interconnect layer by an influence of the etchant solution, since the support substrate can be easily stripped from the interconnect layer. The method of manufacturing a semiconductor device includes: forming an interconnect film, by forming a seed metal layer on a support substrate and a protective film contacting with an end of an interface between the support substrate and the seed metal layer, and by growing a plated material from a surface of the seed metal layer; mounting a semiconductor chip on the interconnect film; removing at least a portion of the protective film to form a region where the support substrate and the seed metal layer are exposed; and stripping the support substrate from the region as a starting point to remove thereof from the seed metal layer.

摘要翻译： 制造半导体器件的方法，由于可以容易地从互连层剥离支撑基板，所以能够降低制造成本并防止由于蚀刻液的影响对互连层的损伤。 制造半导体器件的方法包括：通过在支撑衬底上形成种子金属层和与支撑衬底和种子金属层之间的界面的端部接触的保护膜来形成互连膜，并且通过生长电镀 种子金属层表面的材料; 将半导体芯片安装在所述互连膜上; 去除所述保护膜的至少一部分以形成所述支撑基底和所述种子金属层暴露的区域; 从该区域剥离载体基材作为起始点，以将其从种子金属层除去。

公开(公告)号：US20100144091A1

公开(公告)日：2010-06-10

申请号：US12656616

申请日：2010-02-04

申请人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi ,  Yoichiro Kurita ,  Masahiro Komuro ,  Satoshi Matsui

发明人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi ,  Yoichiro Kurita ,  Masahiro Komuro ,  Satoshi Matsui

IPC分类号： H01L21/50

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/562 ,  H01L23/642 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2223/6622 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10155 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.

摘要翻译： 一种制造半导体器件的方法包括形成互连部件，将具有半导体衬底的第一半导体芯片以面向下的方式安装在互连部件上，在互连部件上形成树脂层以覆盖第一半导体的侧表面 芯片，使第一半导体芯片和树脂层变薄，在第一半导体芯片的背面上形成无机绝缘层，以与背面接触并延伸到树脂层上，并形成通孔，从而形成通孔 以穿透无机绝缘层和半导体衬底。

公开(公告)号：US20080128916A1

公开(公告)日：2008-06-05

申请号：US11987624

申请日：2007-12-03

申请人： Koji Soejima ,  Masaya Kawano ,  Yoichiro Kurita

发明人： Koji Soejima ,  Masaya Kawano ,  Yoichiro Kurita

IPC分类号： H01L23/48

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3135 ,  H01L23/66 ,  H01L24/97 ,  H01L25/0657 ,  H01L2223/6627 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19032 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2224/81 ,  H01L2224/0401

摘要： Provided is a semiconductor device including an interconnect substrate, a transmission line which is formed on the interconnect substrate, and a circuit component which is mounted over the interconnect substrate and has a ground plane. The transmission line includes a first portion and a second portion that is connected to the first portion. The first portion and the ground plane constitute a microstrip line. The second portion and ground line constitute a coplanar line.

摘要翻译： 提供了一种半导体器件，包括互连衬底，形成在互连衬底上的传输线，以及安装在互连衬底上并具有接地面的电路部件。 传输线包括连接到第一部分的第一部分和第二部分。 第一部分和接地平面构成微带线。 第二部分和地线构成共面线。

公开(公告)号：US20080079164A1

公开(公告)日：2008-04-03

申请号：US11865750

申请日：2007-10-02

申请人： Yoichiro KURITA ,  Koji Soejima ,  Masaya Kawano

发明人： Yoichiro KURITA ,  Koji Soejima ,  Masaya Kawano

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/3128 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The electronic device includes a first interconnect layer and a second interconnect layer. The second interconnect layer is provided on the lower surface of the first interconnect layer. The first interconnect layer includes a via plug (first conductive plug). An end face of the via plug on the side of the second interconnect layer is smaller in area than the opposite end face. The via plug is exposed on the surface of the first interconnect layer facing the second interconnect layer. An insulating resin forming the first interconnect layer is higher in thermal decomposition temperature than an insulating resin forming the second interconnect layer.

摘要翻译： 电子设备包括第一互连层和第二互连层。 第二互连层设置在第一互连层的下表面上。 第一互连层包括通孔插头（第一导电插头）。 通孔塞在第二互连层一侧的端面的面积小于相对端面。 通孔插头暴露在面向第二互连层的第一互连层的表面上。 形成第一互连层的绝缘树脂的热分解温度高于形成第二互连层的绝缘树脂。

公开(公告)号：US20080079157A1

公开(公告)日：2008-04-03

申请号：US11856730

申请日：2007-09-18

申请人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

发明人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L23/3128 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/1469 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The electronic device includes a first interconnect layer and a second interconnect layer. The second interconnect layer is provided on the lower surface of the first interconnect layer. The first interconnect layer includes a via plug (first conductive plug). An end face of the via plug on the side of the second interconnect layer is smaller in area than the opposite end face. The via plug is exposed on the surface of the first interconnect layer facing the second interconnect layer. An insulating resin forming the first interconnect layer is higher in thermal decomposition temperature than an insulating resin forming the second interconnect layer.

公开(公告)号：US08035231B2

公开(公告)日：2011-10-11

申请号：US12114238

申请日：2008-05-02

申请人： Yoichiro Kurita ,  Masaya Kawano ,  Koji Soejima

发明人： Yoichiro Kurita ,  Masaya Kawano ,  Koji Soejima

IPC分类号： H01L23/48

CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83051 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/19041 ,  H05K3/4644 ,  H05K3/4676 ,  H05K3/4688 ,  Y10T29/4913 ,  H01L2924/00 ,  H01L2224/0401

摘要： The semiconductor device 1 includes interconnect layers 10, 20, an IC chip 30, via plugs 42, 44, a seal resin 50, and solder balls 60. The interconnect layer 10 includes a via plug 42. An end face of the via plug 42 on the side of the interconnect layer 20 is smaller in area than the opposite end face, i.e. the end face on the side of the IC chip 30. An end face of the via plug 44 on the side of the interconnect layer 10 is smaller in area than the opposite end face, i.e. the end face on the side of the solder balls 60. The thermal decomposition temperature of the insulating resin 14 constituting the interconnect layer 10 is higher than that of the insulating resin 24 constituting the interconnect layer 20.

摘要翻译： 半导体器件1包括互连层10,20，IC芯片30，经由插头42,44，密封树脂50和焊球60.互连层10包括通孔塞42.通孔插塞42的端面 在互连层20一侧的面积比相对端面即IC芯片30一侧的端面的面积小。在互连层10一侧的通路插塞44的端面较小 构成互连层10的绝缘树脂14的热分解温度高于构成互连层20的绝缘树脂24的热分解温度。

公开(公告)号：US07928001B2

公开(公告)日：2011-04-19

申请号：US11865750

申请日：2007-10-02

申请人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

发明人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

IPC分类号： H01L21/4763

CPC分类号： H01L23/3128 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/5389 ,  H01L25/0652 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The electronic device includes a first interconnect layer and a second interconnect layer. The second interconnect layer is provided on the lower surface of the first interconnect layer. The first interconnect layer includes a via plug (first conductive plug). An end face of the via plug on the side of the second interconnect layer is smaller in area than the opposite end face. The via plug is exposed on the surface of the first interconnect layer facing the second interconnect layer. An insulating resin forming the first interconnect layer is higher in thermal decomposition temperature than an insulating resin forming the second interconnect layer.

摘要翻译： 电子设备包括第一互连层和第二互连层。 第二互连层设置在第一互连层的下表面上。 第一互连层包括通孔插头（第一导电插头）。 通孔塞在第二互连层一侧的端面的面积小于相对端面。 通孔插头暴露在面向第二互连层的第一互连层的表面上。 形成第一互连层的绝缘树脂的热分解温度高于形成第二互连层的绝缘树脂。

公开(公告)号：US07759786B2

公开(公告)日：2010-07-20

申请号：US11543079

申请日：2006-10-05

申请人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

发明人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

IPC分类号： H01L23/12

CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L2221/68345 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8182 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0695

摘要： An insulating layer 12 is formed as a surface layer of electronic circuit chip 10. A conductor interconnect 14 is formed in the insulating layer 12. The conductor interconnect 14 is exposed in the surface of the insulating layer 12. A solder wetting metallic film 16 (a metallic film) is formed on a portion of the conductor interconnect 14 to be exposed in the surface of the insulating layer 12. Typical metallic material (second metallic material) available for composing the solder wetting metallic film 16 includes a material that requires higher free energy for forming an oxide thereof, as compared with a free energy required for forming an oxide of the metallic material composing the conductor interconnect 14.

摘要翻译： 形成绝缘层12作为电子电路芯片10的表面层。导体互连14形成在绝缘层12中。导体互连14暴露在绝缘层12的表面中。焊料润湿金属膜16 金属膜）形成在导体互连14的一部分上以暴露在绝缘层12的表面中。可用于组成焊料润湿金属膜16的典型金属材料（第二金属材料）包括需要较高自由度的材料 与用于形成构成导体互连14的金属材料的氧化物所需的自由能相比，形成其氧化物的能量。

公开(公告)号：US07656046B2

公开(公告)日：2010-02-02

申请号：US11543207

申请日：2006-10-05

申请人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

发明人： Yoichiro Kurita ,  Koji Soejima ,  Masaya Kawano

IPC分类号： H01L23/28

CPC分类号： H01L21/6835 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device 1 is a semiconductor device of the BGA type, and includes a semiconductor chip 10, a resin layer 20, an insulating layer 30, and an external electrode pad 40. The resin layer 20 is constituted by a sealing resin 22 and an underfill resin 24, and covers the semiconductor chip 10. The insulating layer 30 is formed on the resin layer 20. The external electrode pad 40 is formed in the insulating layer 30. This external electrode pad 40 extends through the insulating layer 30. One surface S1 of the external electrode pad 40 is exposed in the surface of the insulating layer 30, and the other surface S2 is located in the resin layer 20. A concave portion 45 is formed in the surface S2 of the external electrode pad 40. The resin composing the resin layer 20 enters into the concave portion 45.

摘要翻译： 半导体器件1是BGA型的半导体器件，包括半导体芯片10，树脂层20，绝缘层30和外部电极焊盘40.树脂层20由密封树脂22和 底部填充树脂24并且覆盖半导体芯片10.绝缘层30形成在树脂层20上。外部电极焊盘40形成在绝缘层30中。该外部电极焊盘40延伸穿过绝缘层30.一个表面 外部电极焊盘40的S1被暴露在绝缘层30的表面中，另一个表面S2位于树脂层20中。在外部电极焊盘40的表面S2中形成有凹部45。 构成树脂层20进入凹部45。