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    Refrigeration apparatus
    2.
    发明授权
    Refrigeration apparatus 有权
    制冷装置

    公开(公告)号：US09276516B2

    公开(公告)日：2016-03-01

    申请号：US13643134

    申请日：2011-04-28

    申请人： Yoshiyuki Harada ,  Toshiyuki Maeda

    发明人： Yoshiyuki Harada ,  Toshiyuki Maeda

    IPC分类号： H02M1/32 ,  H02P27/08 ,  F25B31/00 ,  H02P29/00 ,  H02M1/44 ,  F25B49/02

    CPC分类号： H02P27/08 ,  F25B13/00 ,  F25B31/006 ,  F25B49/025 ,  F25B2313/003 ,  F25B2313/021 ,  F25B2600/021 ,  F25B2600/024 ,  H02M1/44 ,  H02M2001/327 ,  H02P29/68 ,  Y02B30/741

    摘要： A refrigeration apparatus includes a refrigerant circuit with a compressor, a power module, a refrigerant cooler in contact with the power module, and an IPM motor which drives the compressor. A refrigerant in the refrigerant circuit flows through the refrigerant cooler, and cooling of the power module is performed by dissipating heat to the refrigerant flowing in the refrigerant cooler. A controller in the refrigeration apparatus outputs a driving signal to a drive circuit to reduce the number of switching operations of switching elements by performing overmodulation control such that there exists a carrier cycle in which no switching is performed.

    摘要翻译： 制冷装置包括具有压缩机的制冷剂回路，功率模块，与功率模块接触的制冷剂冷却器，以及驱动压缩机的IPM电动机。 制冷剂回路中的制冷剂流过制冷剂冷却器，通过向在制冷剂冷却器中流动的制冷剂散热而进行动力组件的冷却。 制冷装置中的控制器通过执行过调制控制将驱动信号输出到驱动电路来减少开关元件的开关操作次数，使得存在不进行开关的载波周期。

    Method for manufacturing nitride semiconductor layer
    4.
    发明授权
    Method for manufacturing nitride semiconductor layer 有权
    氮化物半导体层的制造方法

    公开(公告)号：US09349590B2

    公开(公告)日：2016-05-24

    申请号：US13604183

    申请日：2012-09-05

    申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/12

    CPC分类号： H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

    摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

    摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20120032209A1

    公开(公告)日：2012-02-09

    申请号：US13032934

    申请日：2011-02-23

    申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/32

    CPC分类号： H01L33/06 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/04 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。 多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。 发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比 第三组元素在第二层。 多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。 多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20110204394A1

    公开(公告)日：2011-08-25

    申请号：US12875503

    申请日：2010-09-03

    申请人： Toshiki HIKOSAKA ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    发明人： Toshiki HIKOSAKA ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    IPC分类号： H01L33/30 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0

    摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0

    Crystal growth method and apparatus
    8.
    发明授权
    Crystal growth method and apparatus 失效
    晶体生长方法和装置

    公开(公告)号：US07862657B2

    公开(公告)日：2011-01-04

    申请号：US11782052

    申请日：2007-07-24

    申请人： Masaaki Onomura ,  Yoshiyuki Harada

    发明人： Masaaki Onomura ,  Yoshiyuki Harada

    IPC分类号： C30B35/00 ,  C23C16/54

    CPC分类号： C30B29/40 ,  C23C16/45572 ,  C23C16/45576 ,  C23C16/4584 ,  C30B25/165 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T117/10 ,  Y10T117/1016

    摘要： A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.

    摘要翻译： 一种用于形成半导体膜的晶体生长方法，所述方法包括：在围绕旋转轴线旋转一个或多个基板的同时，使基板平行于基板的旋转轴侧的原料气体和载气从基板平行。 与通过原料气体的热分解形成的半导体膜的生长速度最大的位置相比，基板的中心位于比旋转轴更靠近的一侧。

    Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
    9.
    发明授权
    Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer 有权
    氮化物半导体晶片，氮化物半导体器件以及氮化物半导体晶片的制造方法

    公开(公告)号：US09053931B2

    公开(公告)日：2015-06-09

    申请号：US13626265

    申请日：2012-09-25

    申请人： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

    发明人： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC分类号： H01L21/02 ,  H01L29/10 ,  H01L29/205 ,  H01L33/32 ,  H01L33/06

    CPC分类号： H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262

    摘要： According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.

    摘要翻译： 根据一个实施例，氮化物半导体晶片包括：硅衬底; 设置在所述硅基板上的缓冲部; 以及设置在缓冲部上并包含氮化物半导体的功能层。 缓冲部包括含有氮化物半导体的第一〜第n缓冲层（n为4以上的整数）。 第一至第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在平行于第一缓冲层的主面的第一方向上具有晶格长度Wi。 设置在第i个缓冲层上的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。 在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足关系式（W（i + 1）-Wi）/ W i＆nlE; 0。008。

    Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer
    10.
    发明授权
    Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer 有权
    半导体发光器件，氮化物半导体层和形成氮化物半导体层的方法

    公开(公告)号：US08829544B2

    公开(公告)日：2014-09-09

    申请号：US13406770

    申请日：2012-02-28

    申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

    IPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/12

    CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

    摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

    摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。