公开(公告)号：US5427411A

公开(公告)日：1995-06-27

申请号：US255769

申请日：1994-06-07

申请人： Yosuke Iwasaki ,  Toshiteru Yoshimura ,  Masashi Ohtsuka ,  Kiyoshi Hayashi ,  Keisuke Miyoshi ,  Toshiaki Ogawa

发明人： Yosuke Iwasaki ,  Toshiteru Yoshimura ,  Masashi Ohtsuka ,  Kiyoshi Hayashi ,  Keisuke Miyoshi ,  Toshiaki Ogawa

IPC分类号： B62D1/19 ,  B62D1/18

CPC分类号： B62D1/197 ,  B62D1/192

摘要： A steering apparatus support structure includes a steering support member extending transversely in a vehicle body and secured to rigid side components of the vehicle body which are likely free from deformation during a frontal end collision and a support bracket device secured to and supported by the steering support member for supporting forward and rearward portions of the steering column. The support bracket device is releasably linked to a vehicle body part which can be deformed backward during a frontal end collision, and the vehicle body part is allowed to be disconnected from the support bracket device when backward deformation is caused in the vehicle body part.

摘要翻译： 转向装置支撑结构包括转向支撑构件，该转向支撑构件在车身中横向延伸并且固定到车身的刚性侧部件，其在前端碰撞期间可能没有变形，以及固定到转向支撑件并由其支撑的支撑支架装置 用于支撑转向柱的前部和后部的部件。 支撑托架装置可释放地连接到车身部分，该车身部分在前端碰撞期间可以向后变形，并且当在车身部分中产生反向变形时允许车身部分与支撑托架装置断开。

公开(公告)号：US20130049053A1

公开(公告)日：2013-02-28

申请号：US13600145

申请日：2012-08-30

申请人： Takeshi KUSUSE ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

发明人： Takeshi KUSUSE ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

摘要翻译： 半导体发光器件包括半导体结构，透明导电层，电介质膜和金属反射层。 半导体结构包括有源区。 透明导电层形成在半导体结构的上表面上。 电介质膜形成在透明导电层的上表面上。 金属反射层形成在电介质膜的上表面上。 电介质膜具有至少一个开口，从而部分地暴露透明导电层。 透明导电层通过开口与金属反射层电连接。 阻挡层部分地形成并覆盖开口，使得阻挡层插入在透明导电层和金属反射层之间。

公开(公告)号：US20060288521A1

公开(公告)日：2006-12-28

申请号：US11295811

申请日：2005-12-07

申请人： Toshiaki Ogawa ,  Kazuya Kondo

发明人： Toshiaki Ogawa ,  Kazuya Kondo

IPC分类号： A47L5/30

CPC分类号： A47L5/30

摘要： An electric vacuum cleaner comprises a vertical type cleaner body provided with a dust collection chamber a handle protrusively provided on an upper portion of the cleaner body, a suction nozzle provided on an lower portion of the cleaner body in such a manner as to communicate with the dust collection chamber being rotatable back and forth with respect to the cleaner body, and being contactable with a surface to be cleaned, an electric fan provided in the suction nozzle, and a rotary brush which is rotated by the electric fan and is built in the suction nozzle. A clutch mechanism which transmits and interrupts power to the rotary brush is provided between the rotary brush and the electric fan. The suction nozzle is rotatably provided on the cleaner body via a hinge mechanism. The clutch mechanism is coupled to the hinge mechanism by a link mechanism.

摘要翻译： 一种电动真空吸尘器，包括一个垂直式的吸尘器本体，该吸尘器主体设置在吸尘器主体的上部上突出设置的把手，吸尘器吸嘴设置在吸尘器主体的下部， 灰尘收集室相对于吸尘器本体可前后旋转，并且可与待清洁的表面接触，设置在吸嘴中的电风扇和由电风扇旋转并内置于吸尘器中的旋转刷 吸嘴。 在旋转刷和电动风扇之间设置有用于向旋转刷发送和中断动力的离合器机构。 吸嘴通过铰链机构可旋转地设置在吸尘器本体上。 离合器机构通过连杆机构联接到铰链机构。

公开(公告)号：US5633188A

公开(公告)日：1997-05-27

申请号：US548069

申请日：1995-10-25

申请人： Toshiaki Ogawa

发明人： Toshiaki Ogawa

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/91

摘要： A method of manufacturing a semiconductor device includes forming a first insulating layer on a major surface of a semiconductor substrate. The first insulating layer has an opening located at a predetermined position on and reaching the major surface of the substrate. A first conductive layer is formed in the opening and in contact with the surface of the first insulating layer. A second insulating layer is formed on a predetermined region of the first conductive layer. A second conductive layer is formed to cover at least the second insulating layer. The second conductive layer is removed from at least an upper surface of the second insulating layer to expose the upper surface thereof. The exposed upper surface of the second insulating layer is etched to partially remove a predetermined thickness of the second insulating layer. The second conductive layer is sputter-etched with inert gas to substantially round the tip and flatten a side surface thereof. A capacitor insulating layer is formed to cover the second conductive layer after removing the residual second insulating layer. A third conductive layer is formed to cover the capacitor insulating layer. The sputter-etching of the second conductive layer results in a side surface roughness of the second conductive layer of no more than 200 .ANG..

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底的主表面上形成第一绝缘层。 第一绝缘层具有位于并到达基板的主表面上的预定位置的开口。 第一导电层形成在开口中并与第一绝缘层的表面接触。 在第一导电层的预定区域上形成第二绝缘层。 形成第二导电层以至少覆盖第二绝缘层。 第二导电层从第二绝缘层的至少上表面去除，以暴露其上表面。 蚀刻暴露的第二绝缘层的上表面以部分去除第二绝缘层的预定厚度。 用惰性气体溅射蚀刻第二导电层，以基本上使尖端圆整并使其侧表面变平。 在去除残留的第二绝缘层之后，形成电容器绝缘层以覆盖第二导电层。 形成第三导电层以覆盖电容器绝缘层。 第二导电层的溅射蚀刻导致第二导电层的侧表面粗糙度不超过200。

公开(公告)号：US5504376A

公开(公告)日：1996-04-02

申请号：US222502

申请日：1994-04-04

申请人： Kazuyuki Sugahara ,  Natsuo Ajika ,  Toshiaki Ogawa ,  Toshiaki Iwamatsu ,  Takashi Ipposhi

发明人： Kazuyuki Sugahara ,  Natsuo Ajika ,  Toshiaki Ogawa ,  Toshiaki Iwamatsu ,  Takashi Ipposhi

IPC分类号： H01L27/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L21/822 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/02 ,  H01L23/48

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  H01L21/8221 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896

摘要： In a method of manufacturing a stacked-type semiconductor device, firstly, a first semiconductor substrate having a first device formed thereon is covered with an interlayer insulating layer and a planarized polycrystalline silicon layer is formed on the interlayer insulating layer. The first semiconductor substrate and a second semiconductor substrate are joined together by putting the surface of the polycrystalline silicon layer in close contact with the surface of a refractory metal layer formed on the second semiconductor substrate, applying thermal treatment at 700.degree. C. or below and changing the refractory metal layer to silicide.

摘要翻译： 在叠层型半导体器件的制造方法中，首先，在层间绝缘层上形成有具有形成在其上的第一器件的第一半导体衬底，层间绝缘层形成平坦化的多晶硅层。 将第一半导体衬底和第二半导体衬底通过将多晶硅层的表面与形成在第二半导体衬底上的难熔金属层的表面紧密接触，在700℃以下进行热处理， 将难熔金属层改为硅化物。

公开(公告)号：US5474615A

公开(公告)日：1995-12-12

申请号：US993514

申请日：1992-12-17

申请人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

发明人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  C03C15/00

CPC分类号： H01L21/02046 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/67028 ,  Y10S438/963

摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.

摘要翻译： 公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。 在其上形成图案或沟槽的被处理基板位于处理容器中。 与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。 反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。 根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。 因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

公开(公告)号：US5306671A

公开(公告)日：1994-04-26

申请号：US718674

申请日：1991-06-21

申请人： Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa

发明人： Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa

IPC分类号： H01L21/302 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/3065 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28167 ,  Y10S438/906 ,  Y10S438/974

摘要： A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.

摘要翻译： 本发明的主要特征是清洁半导体衬底的表面，而不会在其表面上提供损伤层。 通过使用含氟气体的等离子体蚀刻在硅衬底的表面上形成的自然氧化膜。 通过使用含氟气体以除去在上述等离子体蚀刻步骤中形成的表面损伤层和碳氟化合物层，再次对半导体衬底的表面进行等离子体蚀刻。 半导体衬底表面在低压下用紫外线照射，以便在后一等离子体蚀刻时解离和去除化学吸附到半导体衬底表面上的氟原子。

公开(公告)号：US5047417A

公开(公告)日：1991-09-10

申请号：US354306

申请日：1989-05-19

申请人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Megumi Ikemori ,  Toshiaki Ogawa ,  Takanori Kawamura

发明人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Megumi Ikemori ,  Toshiaki Ogawa ,  Takanori Kawamura

IPC分类号： C07C233/40 ,  C07C235/34 ,  C07C235/36 ,  C07C237/12 ,  C07C237/20 ,  C07C255/41 ,  C07C255/57 ,  C07C317/44 ,  C07C323/62 ,  C07D207/08 ,  C07D207/32 ,  C07D207/327 ,  C07D207/38 ,  C07D211/22 ,  C07D211/34 ,  C07D211/58 ,  C07D211/86 ,  C07D213/38 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D223/16 ,  C07D231/12 ,  C07D233/56 ,  C07D233/61 ,  C07D235/06 ,  C07D237/14 ,  C07D241/18 ,  C07D249/08 ,  C07D263/32 ,  C07D277/22 ,  C07D277/30 ,  C07D317/58 ,  C07D317/60 ,  C07D319/18 ,  C07D405/06 ,  C07D471/04 ,  C07D521/00

CPC分类号： C07D207/08 ,  C07C233/40 ,  C07C235/34 ,  C07C235/36 ,  C07C237/12 ,  C07C237/20 ,  C07C255/41 ,  C07C255/57 ,  C07C317/44 ,  C07C323/62 ,  C07D207/327 ,  C07D207/38 ,  C07D211/22 ,  C07D211/34 ,  C07D211/58 ,  C07D211/86 ,  C07D213/38 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D223/16 ,  C07D231/12 ,  C07D233/56 ,  C07D235/06 ,  C07D237/14 ,  C07D241/18 ,  C07D249/08 ,  C07D263/32 ,  C07D277/30 ,  C07D317/58 ,  C07D317/60 ,  C07D319/18 ,  C07D405/06 ,  C07D471/04 ,  C07C2101/08

摘要： A butenoic or propenoic acid derivative having the following formula in which G is an aryl or a heterocyclic ring, R11 and R12 are hydrogen or an alkyl, X is sulfur or oxygen, R2 and R3 are hydrogen, an substituent such as an alkyl and J is pyridyl or phenyl having substituents and a heterocyclic ring may be formed between R2, R3 and J is provided here and is useful in the pharmacological field. ##STR1##

公开(公告)号：US5038013A

公开(公告)日：1991-08-06

申请号：US562669

申请日：1990-08-03

申请人： Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida

发明人： Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32623 ,  H01J37/32688

摘要： A plasma etching apparatus comprises a chamber, a holding table for holding samples, such as a semiconductor substrate to be etched, in the chamber, a plasma-generating device for generating a plasma within the chamber, and a magnetic-field-forming device which forms a magnetic field perpendicular to the surface of the sample placed on the holding table and parallel the inner wall of the chamber.

摘要翻译： 等离子体蚀刻装置包括：腔室，用于保持腔室中待蚀刻的半导体衬底等样品的保持台，用于在腔室内产生等离子体的等离子体产生装置;以及磁场形成装置， 形成垂直于放置在保持台上并平行于室的内壁的样品表面的磁场。

公开(公告)号：US08823031B2

公开(公告)日：2014-09-02

申请号：US13600145

申请日：2012-08-30

申请人： Takeshi Kususe ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

发明人： Takeshi Kususe ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

IPC分类号： H01L33/60 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

摘要翻译： 半导体发光器件包括半导体结构，透明导电层，电介质膜和金属反射层。 半导体结构包括有源区。 透明导电层形成在半导体结构的上表面上。 电介质膜形成在透明导电层的上表面上。 金属反射层形成在电介质膜的上表面上。 电介质膜具有至少一个开口，从而部分地暴露透明导电层。 透明导电层通过开口与金属反射层电连接。 阻挡层部分地形成并覆盖开口，使得阻挡层插入在透明导电层和金属反射层之间。