专利检索 ap:("Young Ho Sohn" OR "Seog Moon Choi" OR "Sung Keun Park" OR "Young Ki Lee" OR "Bum Sik Jang" OR "Ji Hyun Park") AND inv:"Bum Sik Jang" 第 1 页

1.

发明申请
HEAT DISSIPATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：散热基板及其制造方法

公开(公告)号：US20100294543A1

公开(公告)日：2010-11-25

申请号：US12539527

申请日：2009-08-11

申请人： Young Ho Sohn , Seog Moon Choi , Sung Keun Park , Young Ki Lee , Bum Sik Jang , Ji Hyun Park

发明人： Young Ho Sohn , Seog Moon Choi , Sung Keun Park , Young Ki Lee , Bum Sik Jang , Ji Hyun Park

IPC分类号： H05K1/00 , B05D5/12

CPC分类号： H05K3/4623 , H05K1/056 , H05K3/429 , H05K3/445 , H05K3/4641 , H05K2201/09536 , H05K2201/0959 , H05K2201/096

摘要： Disclosed herein is a heat dissipating substrate having a structure in which two two-layered core substrates, each including a metal core functioning to radiate heat, are laminated and connected in parallel to each other, thus accomplishing more improved radiation performance, and a method of manufacturing the same.

摘要翻译： 本发明公开了一种散热基板，其结构是将两个分别包含发热功能的金属芯片的两层芯基板彼此并联并相互并联，从而实现更好的辐射性能，制造相同。

2.

发明授权
Power semiconductor module and method of manufacturing the same 有权
标题翻译：功率半导体模块及其制造方法

公开(公告)号：US08309399B2

公开(公告)日：2012-11-13

申请号：US13246615

申请日：2011-09-27

申请人： Shan Gao , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park

发明人： Shan Gao , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park

IPC分类号： H01L21/50

CPC分类号： H01L25/072 , H01L23/3121 , H01L23/3735 , H01L23/427 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/071 , H01L25/50 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/0102 , H01L2924/01057 , H01L2924/01078 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/16195 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207

摘要： Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.

摘要翻译： 这里公开了功率半导体模块。模块包括各自具有第一通孔的金属板，阳极氧化层形成在金属板的表面和第一通孔的内部。冷却构件在与第一通孔对应的位置具有第二通孔，并且金属板附接到冷却构件的两侧。在阳极氧化层上形成电路层，通过在第一和第二通孔中形成的通孔进行层间连接。电源设备连接到电路层。树脂密封剂包围电路层和功率器件。每个金属板上安装有一个壳体，以形成树脂密封剂的密封空间。

3.

发明申请
POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：功率半导体模块及其制造方法

公开(公告)号：US20110012252A1

公开(公告)日：2011-01-20

申请号：US12551238

申请日：2009-08-31

申请人： Shan GAO , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park

发明人： Shan GAO , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park

IPC分类号： H01L23/46 , H01L23/48 , H01L21/50

CPC分类号： H01L25/072 , H01L23/3121 , H01L23/3735 , H01L23/427 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/071 , H01L25/50 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/0102 , H01L2924/01057 , H01L2924/01078 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/16195 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207

摘要： Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.

摘要翻译： 这里公开了功率半导体模块。模块包括各自具有第一通孔的金属板，阳极氧化层形成在金属板的表面和第一通孔的内部。冷却构件在与第一通孔对应的位置具有第二通孔，并且金属板附接到冷却构件的两侧。在阳极氧化层上形成电路层，通过在第一和第二通孔中形成的通孔进行层间连接。电源设备连接到电路层。树脂密封剂包围电路层和功率器件。每个金属板上安装有一个壳体，以形成树脂密封剂的密封空间。

4.

发明申请
POWER SEMICONDUCTOR MODULE 审中-公开
标题翻译：功率半导体模块

公开(公告)号：US20100295172A1

公开(公告)日：2010-11-25

申请号：US12538042

申请日：2009-08-07

申请人： Shan Gao , Seog Moon Choi , Do Jae Yoo , Tae Hyun Kim , Bum Sik Jang , Ji Hyun Park

发明人： Shan Gao , Seog Moon Choi , Do Jae Yoo , Tae Hyun Kim , Bum Sik Jang , Ji Hyun Park

IPC分类号： H01L23/34

CPC分类号： H01L23/467 , H01L23/142 , H01L23/24 , H01L23/3735 , H01L23/427 , H01L25/071 , H01L25/072 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00014 , H01L2924/00012

摘要： Disclosed is a power semiconductor module having improved heat dissipation performance, including an anodized metal substrate including a metal plate, an anodized layer formed on a surface of the metal plate, and a circuit layer formed on the anodized layer on the metal plate, a power device connected to the circuit layer, and a housing mounted on the metal plate and for defining a sealing space which accommodates a resin sealing material for sealing the circuit layer and the power device.

摘要翻译： 公开了一种具有改善的散热性能的功率半导体模块，包括阳极化金属基板，其包括金属板，形成在金属板的表面上的阳极氧化层和形成在金属板上的阳极氧化层上的电路层，连接到电路层的器件，以及安装在金属板上并用于限定容纳用于密封电路层和功率器件的树脂密封材料的密封空间的壳体。

5.

发明授权
Power semiconductor module and method of manufacturing the same 有权
标题翻译：功率半导体模块及其制造方法

公开(公告)号：US08058722B2

公开(公告)日：2011-11-15

申请号：US12551238

申请日：2009-08-31

申请人： Shan Gao , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park

发明人： Shan Gao , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park

IPC分类号： H01L23/46

CPC分类号： H01L25/072 , H01L23/3121 , H01L23/3735 , H01L23/427 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/071 , H01L25/50 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/0102 , H01L2924/01057 , H01L2924/01078 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/16195 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207

摘要： Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.

摘要翻译： 这里公开了功率半导体模块。模块包括各自具有第一通孔的金属板，阳极氧化层形成在金属板的表面和第一通孔的内部。冷却构件在与第一通孔对应的位置具有第二通孔，并且金属板附接到冷却构件的两侧。在阳极氧化层上形成电路层，通过在第一和第二通孔中形成的通孔进行层间连接。电源设备连接到电路层。树脂密封剂包围电路层和功率器件。每个金属板上安装有一个壳体，以形成树脂密封剂的密封空间。

6.

发明申请
POWER DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：功率器件封装及其制造方法

公开(公告)号：US20110031608A1

公开(公告)日：2011-02-10

申请号：US12562829

申请日：2009-09-18

申请人： Tae Hyun KIM , Seog Moon Choi , Tae Hoon Kim , Bum Sik Jang , Ji Hyun Park

发明人： Tae Hyun KIM , Seog Moon Choi , Tae Hoon Kim , Bum Sik Jang , Ji Hyun Park

IPC分类号： H01L23/48 , H01L21/56

CPC分类号： H01L23/24 , H01L23/04 , H01L23/13 , H01L23/142 , H01L23/36 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/072 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/73265 , H01L2224/8384 , H01L2924/00014 , H01L2924/01078 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15153 , H01L2924/15165 , H01L2924/1532 , H01L2924/16195 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： Disclosed is a power device package, which has high heat dissipation performance and includes an anodized metal substrate including a metal plate having a cavity formed on one surface thereof and an anodized layer formed on both the surface of the metal plate and the inner wall of the cavity and a circuit layer formed on the metal plate, a power device mounted in the cavity of the metal plate so as to be connected to the circuit layer, and a resin sealing material charged in the cavity of the metal plate. A method of fabricating the power device package is also provided.

摘要翻译： 公开了一种功率器件封装，其具有高散热性能，并且包括阳极氧化金属基板，其包括金属板，金属板的一个表面上形成有空腔，阳极氧化层形成在金属板的表面和金属板的内壁上空腔和形成在金属板上的电路层，安装在金属板的空腔中以连接到电路层的功率器件，以及填充在金属板的空腔中的树脂密封材料。还提供了制造功率器件封装的方法。