公开(公告)号：US20100294543A1

公开(公告)日：2010-11-25

申请号：US12539527

申请日：2009-08-11

申请人： Young Ho Sohn ,  Seog Moon Choi ,  Sung Keun Park ,  Young Ki Lee ,  Bum Sik Jang ,  Ji Hyun Park

发明人： Young Ho Sohn ,  Seog Moon Choi ,  Sung Keun Park ,  Young Ki Lee ,  Bum Sik Jang ,  Ji Hyun Park

IPC分类号： H05K1/00 ,  B05D5/12

CPC分类号： H05K3/4623 ,  H05K1/056 ,  H05K3/429 ,  H05K3/445 ,  H05K3/4641 ,  H05K2201/09536 ,  H05K2201/0959 ,  H05K2201/096

摘要： Disclosed herein is a heat dissipating substrate having a structure in which two two-layered core substrates, each including a metal core functioning to radiate heat, are laminated and connected in parallel to each other, thus accomplishing more improved radiation performance, and a method of manufacturing the same.

摘要翻译： 本发明公开了一种散热基板，其结构是将两个分别包含发热功能的金属芯片的两层芯基板彼此并联并相互并联，从而实现更好的辐射性能， 制造相同。

公开(公告)号：US08309399B2

公开(公告)日：2012-11-13

申请号：US13246615

申请日：2011-09-27

申请人： Shan Gao ,  Seog Moon Choi ,  Tae Hyun Kim ,  Ju Pyo Hong ,  Bum Sik Jang ,  Ji Hyun Park

发明人： Shan Gao ,  Seog Moon Choi ,  Tae Hyun Kim ,  Ju Pyo Hong ,  Bum Sik Jang ,  Ji Hyun Park

IPC分类号： H01L21/50

CPC分类号： H01L25/072 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/427 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/071 ,  H01L25/50 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.

摘要翻译： 这里公开了功率半导体模块。 模块包括各自具有第一通孔的金属板，阳极氧化层形成在金属板的表面和第一通孔的内部。 冷却构件在与第一通孔对应的位置具有第二通孔，并且金属板附接到冷却构件的两侧。 在阳极氧化层上形成电路层，通过在第一和第二通孔中形成的通孔进行层间连接。 电源设备连接到电路层。 树脂密封剂包围电路层和功率器件。 每个金属板上安装有一个壳体，以形成树脂密封剂的密封空间。

公开(公告)号：US20110012252A1

公开(公告)日：2011-01-20

申请号：US12551238

申请日：2009-08-31

申请人： Shan GAO ,  Seog Moon Choi ,  Tae Hyun Kim ,  Ju Pyo Hong ,  Bum Sik Jang ,  Ji Hyun Park

发明人： Shan GAO ,  Seog Moon Choi ,  Tae Hyun Kim ,  Ju Pyo Hong ,  Bum Sik Jang ,  Ji Hyun Park

IPC分类号： H01L23/46 ,  H01L23/48 ,  H01L21/50

CPC分类号： H01L25/072 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/427 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/071 ,  H01L25/50 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.

摘要翻译： 这里公开了功率半导体模块。 模块包括各自具有第一通孔的金属板，阳极氧化层形成在金属板的表面和第一通孔的内部。 冷却构件在与第一通孔对应的位置具有第二通孔，并且金属板附接到冷却构件的两侧。 在阳极氧化层上形成电路层，通过在第一和第二通孔中形成的通孔进行层间连接。 电源设备连接到电路层。 树脂密封剂包围电路层和功率器件。 每个金属板上安装有一个壳体，以形成树脂密封剂的密封空间。

公开(公告)号：US20100295172A1

公开(公告)日：2010-11-25

申请号：US12538042

申请日：2009-08-07

申请人： Shan Gao ,  Seog Moon Choi ,  Do Jae Yoo ,  Tae Hyun Kim ,  Bum Sik Jang ,  Ji Hyun Park

发明人： Shan Gao ,  Seog Moon Choi ,  Do Jae Yoo ,  Tae Hyun Kim ,  Bum Sik Jang ,  Ji Hyun Park

IPC分类号： H01L23/34

CPC分类号： H01L23/467 ,  H01L23/142 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/427 ,  H01L25/071 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Disclosed is a power semiconductor module having improved heat dissipation performance, including an anodized metal substrate including a metal plate, an anodized layer formed on a surface of the metal plate, and a circuit layer formed on the anodized layer on the metal plate, a power device connected to the circuit layer, and a housing mounted on the metal plate and for defining a sealing space which accommodates a resin sealing material for sealing the circuit layer and the power device.

摘要翻译： 公开了一种具有改善的散热性能的功率半导体模块，包括阳极化金属基板，其包括金属板，形成在金属板的表面上的阳极氧化层和形成在金属板上的阳极氧化层上的电路层， 连接到电路层的器件，以及安装在金属板上并用于限定容纳用于密封电路层和功率器件的树脂密封材料的密封空间的壳体。

公开(公告)号：US08058722B2

公开(公告)日：2011-11-15

申请号：US12551238

申请日：2009-08-31

申请人： Shan Gao ,  Seog Moon Choi ,  Tae Hyun Kim ,  Ju Pyo Hong ,  Bum Sik Jang ,  Ji Hyun Park

发明人： Shan Gao ,  Seog Moon Choi ,  Tae Hyun Kim ,  Ju Pyo Hong ,  Bum Sik Jang ,  Ji Hyun Park

IPC分类号： H01L23/46

CPC分类号： H01L25/072 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/427 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/071 ,  H01L25/50 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.

摘要翻译： 这里公开了功率半导体模块。 模块包括各自具有第一通孔的金属板，阳极氧化层形成在金属板的表面和第一通孔的内部。 冷却构件在与第一通孔对应的位置具有第二通孔，并且金属板附接到冷却构件的两侧。 在阳极氧化层上形成电路层，通过在第一和第二通孔中形成的通孔进行层间连接。 电源设备连接到电路层。 树脂密封剂包围电路层和功率器件。 每个金属板上安装有一个壳体，以形成树脂密封剂的密封空间。

公开(公告)号：US20110031608A1

公开(公告)日：2011-02-10

申请号：US12562829

申请日：2009-09-18

申请人： Tae Hyun KIM ,  Seog Moon Choi ,  Tae Hoon Kim ,  Bum Sik Jang ,  Ji Hyun Park

发明人： Tae Hyun KIM ,  Seog Moon Choi ,  Tae Hoon Kim ,  Bum Sik Jang ,  Ji Hyun Park

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L23/24 ,  H01L23/04 ,  H01L23/13 ,  H01L23/142 ,  H01L23/36 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed is a power device package, which has high heat dissipation performance and includes an anodized metal substrate including a metal plate having a cavity formed on one surface thereof and an anodized layer formed on both the surface of the metal plate and the inner wall of the cavity and a circuit layer formed on the metal plate, a power device mounted in the cavity of the metal plate so as to be connected to the circuit layer, and a resin sealing material charged in the cavity of the metal plate. A method of fabricating the power device package is also provided.

摘要翻译： 公开了一种功率器件封装，其具有高散热性能，并且包括阳极氧化金属基板，其包括金属板，金属板的一个表面上形成有空腔，阳极氧化层形成在金属板的表面和金属板的内壁上 空腔和形成在金属板上的电路层，安装在金属板的空腔中以连接到电路层的功率器件，以及填充在金属板的空腔中的树脂密封材料。 还提供了制造功率器件封装的方法。

公开(公告)号：US20120319259A1

公开(公告)日：2012-12-20

申请号：US13235176

申请日：2011-09-16

申请人： Kwang Soo Kim ,  Ji Hyun Park ,  Young Ki Lee ,  Seog Moon Choi

发明人： Kwang Soo Kim ,  Ji Hyun Park ,  Young Ki Lee ,  Seog Moon Choi

IPC分类号： H01L23/495 ,  H01L21/50

CPC分类号： H01L24/43 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49586 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15724 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: first and second lead frames arranged to face each other, both or either of the first and second frames being made of aluminum; anodized layers formed on portions of the lead frame(s) made of aluminum in the first and second lead frames; and semiconductor devices mounted on first surfaces of the first and second lead frames.

摘要翻译： 这里公开了功率模块封装及其制造方法。 功率模块封装包括：布置成彼此面对的第一和第二引线框架，第一和第二框架中的任一个或第二框架由铝制成; 阳极氧化层形成在第一和第二引线框架中由铝制成的引线框架的部分上; 以及安装在第一和第二引线框架的第一表面上的半导体器件。

公开(公告)号：US08553417B2

公开(公告)日：2013-10-08

申请号：US13007545

申请日：2011-01-14

申请人： Ji Hyun Park ,  Seog Moon Choi ,  Young Ki Lee

发明人： Ji Hyun Park ,  Seog Moon Choi ,  Young Ki Lee

IPC分类号： H05K7/20

CPC分类号： H05K1/053 ,  H05K2201/09745

摘要： Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes: a base substrate with a heat sink, having a groove; an insulating layer formed on the base substrate by performing anodization thereon; and a circuit layer formed on the insulating layer, whereby the heat-radiating substrate with the heat-sink, made of metal material, is manufactured, thereby making it possible to protect devices weak against heat and thus solve the problem in view of reduced life span and degraded reliability.

摘要翻译： 这里公开了散热基板及其制造方法。 散热基板包括：具有散热器的基底，具有凹槽; 绝缘层，其通过在其上进行阳极氧化而形成在所述基底基板上; 以及形成在绝缘层上的电路层，由此制造具有由金属材料制成的散热器的散热基板，从而可以保护弱热的器件，从而解决了降低寿命的问题 跨度和可靠性降低。

公开(公告)号：US08729683B2

公开(公告)日：2014-05-20

申请号：US13235176

申请日：2011-09-16

申请人： Kwang Soo Kim ,  Ji Hyun Park ,  Young Ki Lee ,  Seog Moon Choi

发明人： Kwang Soo Kim ,  Ji Hyun Park ,  Young Ki Lee ,  Seog Moon Choi

IPC分类号： H01L23/495

CPC分类号： H01L24/43 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49586 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15724 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: first and second lead frames arranged to face each other, both or either of the first and second frames being made of aluminum; anodized layers formed on portions of the lead frame(s) made of aluminum in the first and second lead frames; and semiconductor devices mounted on first surfaces of the first and second lead frames.

摘要翻译： 这里公开了功率模块封装及其制造方法。 功率模块封装包括：布置成彼此面对的第一和第二引线框架，第一和第二框架中的任一个或第二框架由铝制成; 阳极氧化层形成在第一和第二引线框架中由铝制成的引线框架的部分上; 以及安装在第一和第二引线框架的第一表面上的半导体器件。

公开(公告)号：US20110316035A1

公开(公告)日：2011-12-29

申请号：US12897936

申请日：2010-10-05

申请人： Sang Hyun Shin ,  Tae Hoon Kim ,  Cheol Ho Heo ,  Young Ki Lee ,  Ji Hyun Park ,  Ki Ho Seo

发明人： Sang Hyun Shin ,  Tae Hoon Kim ,  Cheol Ho Heo ,  Young Ki Lee ,  Ji Hyun Park ,  Ki Ho Seo

IPC分类号： H01L33/48 ,  H01L33/64

CPC分类号： H05K3/0061 ,  H01L23/4006 ,  H01L33/641 ,  H01L33/642 ,  H01L2023/4062 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H05K1/05 ,  H05K2201/0209 ,  H05K2201/10106 ,  H05K2201/10409 ,  H05K2203/0315 ,  H01L2924/00

摘要： Disclosed is a heat-dissipating substrate, which includes a base substrate including a metal layer, an insulating layer formed on one surface of the metal layer, and a circuit layer formed on the insulating layer, a heat sink layer formed on the other surface of the metal layer, a connector for connecting the base substrate and the heat sink layer to each other, an opening formed in a direction of thickness of the base substrate and into which the connector is inserted, and an anodized layer formed on either or both of the other surface and a lateral surface of the metal layer, and in which the metal layer and the heat sink layer are insulated from each other by means of the anodized layer, thus preventing transfer of static electricity or voltage shock to the metal layer. A method of manufacturing the heat-dissipating substrate is also provided.

摘要翻译： 本发明公开了一种散热基板，其特征在于，具备包括金属层的基底基板，在所述金属层的一个面上形成的绝缘层，以及在所述绝缘层上形成的电路层，形成在所述绝缘层的另一面的散热层 所述金属层，用于将所述基底基板和所述散热层彼此连接的连接器，形成在所述基底基板的厚度方向上并且所述连接器被插入的开口的开口以及形成在所述基底基板中的任一个或两者上的阳极氧化层 金属层的另一表面和侧表面，并且其中金属层和散热层通过阳极氧化层彼此绝缘，从而防止静电或电压冲击向金属层传递。 还提供了制造散热基板的方法。