摘要:
A method for receiving an optical orthogonal frequency-division multiplexing (OFDM) signal and a receiver thereof are applicable to an optical OFDM system. The receiving method includes the following steps. An optical signal is converted into a digital signal. A symbol boundary of the digital signal is estimated. A guard interval of the digital signal is removed according to the symbol boundary, so as to generate an electrical signal. The electrical signal is converted into a plurality of frequency domain sub-carriers in a fast Fourier transform (FFT) manner. A timing offset is estimated with pilot carriers and frequency domain sub-carriers corresponding to the same symbol period. The estimated symbol boundary is compensated with the timing offset. Each frequency domain sub-carrier includes a plurality of pilot carrier signals. Through the receiving method, the timing offset arisen from chromatic dispersion of an optical fiber is effectively estimated and adopted for compensation.
摘要:
An FFT processor is disclosed, which includes a first multi-pipelined MDC unit, a second multi-pipelined MDC unit and a switching network. The first multi-pipelined MDC unit and the second multi-pipelined MDC unit respectively employ a plurality of MDC circuits to change the positions of the delayers thereof in parallel way. By changing the operation time sequence of the signals in the first multi-pipelined MDC unit and the second multi-pipelined MDC unit, the first multi-pipelined MDC unit is able to directly send the operation results to the second multi-pipelined MDC unit through the switching network.
摘要:
A bump structure includes a substrate, a pad, an electrode and a protruding electrode. The pad is disposed on the substrate. The electrode is formed by a first metal material and disposed on the pad. The protruding electrode is formed by a second metal material and disposed on the electrode, wherein a cross-sectional area of the protruding electrode is less than a cross-sectional area of the electrode.
摘要:
A fabricating method of an active device array substrate is provided. The active device array substrate has at least one patterned conductive layer. The patterned conductive layer includes a copper layer. A cross-section of the copper layer which is parallel to a normal line direction of the copper layer includes a first trapezoid and a second trapezoid stacked on the first trapezoid. A base angle of the first trapezoid and a base angle of the second trapezoid are acute angles, and a difference between the base angle of the first trapezoid and the base angle of the second trapezoid is from about 5° to about 30°.
摘要:
An electrode connection structure of a speaker unit is provided. The speaker unit includes at least one electrode layer, which is made of a conductive material, or made of a non-conductive material with a conductive layer formed on a surface thereof. The electrode connection structure includes a conductive electrode and an adhesive material. The conductive electrode is used for providing power supply signals for the speaker unit to generate sounds. The adhesive material adheres the conductive electrode in parallel with a surface of the electrode layer. The adhesive material has adhesive characteristics, so as to electrically connect the conductive electrode and the electrode layer, in which the adhesive material is adhered to a side of the surface of the electrode layer closely adjacent to the conductive electrode with a certain area.
摘要:
The present invention relates to a heating assembly, a heating device and an auxiliary cooling module for a battery. The heating assembly is connected to a battery and includes a heat-conducting element and a heating element. The heat-conducting element has at least one heat-absorbing portion and at least one heat-conducting portion. The heat-conducting portion is provided to correspond to the battery. The heating element has at least one first heating portion located to correspond to the heat-absorbing portion for heating the heat-absorbing portion. The other side of the heat-conducting element opposite to the battery is provided with a heat-insulating portion. The auxiliary cooling module is further provided with at least one cooling pipe in the heat-conducting element, thereby cooling the battery. With the heating assembly, the heating device, and the auxiliary cooling module of the present invention, the battery can be kept in a normal range of working temperature, so that the efficiency and lifetime of the battery can be increased greatly.
摘要:
A bust-mode clock and data recovery circuit using phase selecting technology is provided. In the data recovery circuit, a phase-locked loop (PLL) circuit is used for providing a plurality of fixed clock signals, each of which has a clock phase. An oversampling phase selecting circuit is coupled to the phase-locked loop circuit and used for detecting a data edge of a received data signal by using the clock signals and selects a clock phase to be locked according to the location of the data edge. A delay-locked loop (DLL) circuit is coupled to the phase-locked loop circuit and the oversampling phase selecting circuit, and used for comparing the data phase of the data signal with the clock phase of the selected clock signal, so as to delay the data phase of the data signal by a delay time until the data phase is locked as the clock phase.
摘要:
A bump structure includes a substrate, a pad, an electrode and a protruding electrode. The pad is disposed on the substrate. The electrode is formed by a first metal material and disposed on the pad. The protruding electrode is formed by a second metal material and disposed on the electrode, wherein a cross-sectional area of the protruding electrode is less than a cross-sectional area of the electrode.
摘要:
A semiconductor device includes: a substrate having a first region and a second region; a first gate structure disposed on the first region, wherein the first gate structure comprises a first high-k dielectric layer, a first work function metal layer, and a first metal layer disposed between the first high-k dielectric layer and the first work function metal layer; and a second gate structure disposed on the second region, wherein the second gate structure comprises a second high-k dielectric layer, a second work function metal layer, and a second metal layer disposed between the second high-k dielectric layer and the second work function metal layer, wherein the thickness of the second metal layer is lower than the thickness of the first metal layer.
摘要:
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.