公开(公告)号：US09142520B2

公开(公告)日：2015-09-22

申请号：US13221517

申请日：2011-08-30

申请人： Roden R. Topacio ,  Neil McLellan

发明人： Roden R. Topacio ,  Neil McLellan

IPC分类号： H01L23/488 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/03622 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10126 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/115 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13026 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/06 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/00 ,  H01L2224/05552

摘要： Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes depositing a layer of a first metallic material on a semiconductor chip. The first layer has a first physical quantity. A layer of a second metallic material is deposited on the layer of the first metallic material. The second layer has a second physical quantity. The first and second layers are reflowed to form a solder structure with a desired ratio of the first metallic material to the second metallic material.

摘要翻译： 公开了各种半导体芯片焊料凸块和底部金属化（UBM）结构及其制造方法。 一方面，提供一种方法，其包括在半导体芯片上沉积第一金属材料层。 第一层具有第一物理量。 第二金属材料层沉积在第一金属材料的层上。 第二层具有第二物理量。 第一层和第二层被回流以形成具有所需比例的第一金属材料与第二金属材料的焊料结构。

公开(公告)号：US20130049190A1

公开(公告)日：2013-02-28

申请号：US13221517

申请日：2011-08-30

申请人： Roden R. Topacio ,  Neil McLellan

发明人： Roden R. Topacio ,  Neil McLellan

IPC分类号： H01L23/488 ,  H01L21/58 ,  H01L21/283

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/03622 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10126 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/115 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13026 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/06 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/00 ,  H01L2224/05552

摘要： Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes depositing a layer of a first metallic material on a semiconductor chip. The first layer has a first physical quantity. A layer of a second metallic material is deposited on the layer of the first metallic material. The second layer has a second physical quantity. The first and second layers are reflowed to form a solder structure with a desired ratio of the first metallic material to the second metallic material.

公开(公告)号：US08367539B2

公开(公告)日：2013-02-05

申请号：US13040318

申请日：2011-03-04

申请人： Daisuke Sakurai

发明人： Daisuke Sakurai

IPC分类号： H01L21/44 ,  H01L21/48

CPC分类号： H01L23/562 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/11003 ,  H01L2224/11009 ,  H01L2224/11332 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/115 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13551 ,  H01L2224/13562 ,  H01L2224/13566 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/14 ,  H01L2224/16058 ,  H01L2224/16238 ,  H01L2224/17 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/81011 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81201 ,  H01L2224/814 ,  H01L2224/81444 ,  H01L2224/81825 ,  H01L2224/8183 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/3841 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： The semiconductor device manufacturing method includes the steps of attaching two or more solder particles on at least one electrode among a plurality of electrodes of an electronic component, arranging the electrode of the electronic component and an electrode of a circuit board so as to oppose each other, abutting the solder particles attached on a surface of the electrode of the electronic component to the electrode of the circuit board and heating the solder particles, and connecting electrically the electrode of the electronic component and the electrode of the circuit board via two or more solder joint bodies made by melting the solder particles.

摘要翻译： 半导体器件制造方法包括以下步骤：在电子部件的多个电极中的至少一个电极上附接两个或更多个焊料颗粒，将电子部件的电极和电路板的电极彼此对置 将附着在电子部件的电极表面上的焊料颗粒与电路板的电极相接合并加热焊料颗粒，并通过两个或多个焊料将电子部件的电极和电路板的电极电连接 通过熔化焊料颗粒制成的接合体。

公开(公告)号：US08701973B2

公开(公告)日：2014-04-22

申请号：US13138425

申请日：2010-02-15

申请人： Takeo Kuramoto ,  Kaichi Tsuruta ,  Takeo Saitou

发明人： Takeo Kuramoto ,  Kaichi Tsuruta ,  Takeo Saitou

IPC分类号： B23K1/20 ,  B23K35/24 ,  H05K1/09 ,  B32B15/04

CPC分类号： B23K1/0016 ,  B23K3/0638 ,  B23K35/262 ,  C22F1/00 ,  H01L21/4853 ,  H01L21/6835 ,  H01L2224/11003 ,  H01L2224/11332 ,  H01L2224/115 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/19041 ,  H05K3/3478 ,  H05K3/3484 ,  H05K2203/0338 ,  H05K2203/0405 ,  H05K2203/041 ,  H05K2203/0415 ,  H05K2203/0425 ,  Y10T428/12736 ,  Y10T428/265 ,  Y10T428/31678 ,  H01L2224/29099

摘要： A method of forming solder bumps on electrodes of a circuit board without producing bridging using a solder transfer sheet which does not require alignment includes superposing a circuit board and a solder transfer sheet having a solder layer adhered to at least one side of a supporting substrate, performing heating under pressure to a temperature lower than the solidus temperature of the solder to selectively perform solid phase diffusion bonding of the solder layer to electrodes, and peeling the transfer sheet from the circuit board. The solder layer is in the form of a continuous solder coating or in the form of a monoparticle layer of solder particles which are adhered to the supporting substrate by an adhesive layer.

摘要翻译： 在电路板的电极上形成焊料凸块而不用不需要对准的焊料转移片而形成桥接的方法包括将电路板和焊料层叠置在支撑基板的至少一侧上， 在压力下进行加热至低于焊料的固相线温度的温度，以选择性地进行焊料层与电极的固相扩散接合，以及从电路板剥离转印片材。 焊料层是连续焊料涂层的形式或者是通过粘合剂层粘合到支撑衬底的焊料颗粒的单颗粒层的形式。

公开(公告)号：US20110297433A1

公开(公告)日：2011-12-08

申请号：US13138425

申请日：2010-02-15

申请人： Takeo Kuramoto ,  Kaichi Tsuruta ,  Takeo Saitou

发明人： Takeo Kuramoto ,  Kaichi Tsuruta ,  Takeo Saitou

IPC分类号： H05K1/11 ,  B32B5/00 ,  B32B15/04 ,  B23K1/20 ,  B23K35/24

CPC分类号： B23K1/0016 ,  B23K3/0638 ,  B23K35/262 ,  C22F1/00 ,  H01L21/4853 ,  H01L21/6835 ,  H01L2224/11003 ,  H01L2224/11332 ,  H01L2224/115 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/19041 ,  H05K3/3478 ,  H05K3/3484 ,  H05K2203/0338 ,  H05K2203/0405 ,  H05K2203/041 ,  H05K2203/0415 ,  H05K2203/0425 ,  Y10T428/12736 ,  Y10T428/265 ,  Y10T428/31678 ,  H01L2224/29099

摘要： A method of forming solder bumps on electrodes of a circuit board without producing bridging using a solder transfer sheet which does not require alignment includes superposing a circuit board and a solder transfer sheet having a solder layer adhered to at least one side of a supporting substrate, performing heating under pressure to a temperature lower than the solidus temperature of the solder to selectively perform solid phase diffusion bonding of the solder layer to electrodes, and peeling the transfer sheet from the circuit board. The solder layer is in the form of a continuous solder coating or in the form of a monoparticle layer of solder particles which are adhered to the supporting substrate by an adhesive layer.

摘要翻译： 在电路板的电极上形成焊料凸块而不用不需要对准的焊料转移片而形成桥接的方法包括将电路板和焊料层叠置在支撑基板的至少一侧上， 在压力下进行加热至低于焊料的固相线温度的温度，以选择性地进行焊料层与电极的固相扩散接合，以及从电路板剥离转印片材。 焊料层是连续焊料涂层的形式或者是通过粘合剂层粘合到支撑衬底的焊料颗粒的单颗粒层的形式。

公开(公告)号：US20110233767A1

公开(公告)日：2011-09-29

申请号：US13040318

申请日：2011-03-04

申请人： Daisuke SAKURAI

发明人： Daisuke SAKURAI

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L23/562 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/11003 ,  H01L2224/11009 ,  H01L2224/11332 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/115 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13551 ,  H01L2224/13562 ,  H01L2224/13566 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/14 ,  H01L2224/16058 ,  H01L2224/16238 ,  H01L2224/17 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/81011 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81201 ,  H01L2224/814 ,  H01L2224/81444 ,  H01L2224/81825 ,  H01L2224/8183 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/3841 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： The semiconductor device manufacturing method includes the steps of attaching two or more solder particles on at least one electrode among a plurality of electrodes of an electronic component, arranging the electrode of the electronic component and an electrode of a circuit board so as to oppose each other, abutting the solder particles attached on a surface of the electrode of the electronic component to the electrode of the circuit board and heating the solder particles, and connecting electrically the electrode of the electronic component and the electrode of the circuit board via two or more solder joint bodies made by melting the solder particles.

摘要翻译： 半导体器件制造方法包括以下步骤：在电子部件的多个电极中的至少一个电极上附接两个或更多个焊料颗粒，将电子部件的电极和电路板的电极彼此对置 将附着在电子部件的电极表面上的焊料颗粒与电路板的电极相接合并加热焊料颗粒，并通过两个或多个焊料将电子部件的电极和电路板的电极电连接 通过熔化焊料颗粒制成的接合体。

公开(公告)号：US20170145576A1

公开(公告)日：2017-05-25

申请号：US15332192

申请日：2016-10-24

申请人： International Business Machines Corporation

发明人： Charles L. Arvin ,  Michael S. Gordon

IPC分类号： C25D3/30 ,  H01L23/00 ,  C25D17/00

CPC分类号： C25D3/30 ,  B01J20/0211 ,  B01J20/0251 ,  B01J20/06 ,  B01J20/3078 ,  B01J20/3085 ,  B01J20/3204 ,  B01J20/3236 ,  C23C18/54 ,  C25D5/50 ,  C25D5/505 ,  C25D7/12 ,  C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  C25D17/10 ,  C25D17/12 ,  C25D21/06 ,  G21F9/12 ,  H01L24/11 ,  H01L2224/11462 ,  H01L2224/115 ,  H01L2224/13111 ,  H01L2924/01084

摘要： A non alpha controlled plating bath including Tin species and a trace amount of Polonium species is utilized in a plating tool. The plating tool includes a Polonium filter element to remove Polonium species from the plating bath to selectively plate Tin upon a plating cathode. The filter may include a Titanium inner portion surrounding by a stannic oxide exterior. The filter may reduce the Polonium species by having the polonium absorb and then enter within the stannic oxide matrix. The filter may be located within the plating tool reservoir or filter housing. The filter may be fabricated by forming Tin upon a Titanium backbone and converting the Tin to stannic oxide.

公开(公告)号：US09548282B2

公开(公告)日：2017-01-17

申请号：US14440872

申请日：2013-10-30

申请人： NANTONG FUJITSU MICROELECTRONICS CO., LTD.

发明人： Chang-Ming Lin ,  Lei Shi ,  Yujuan Tao

IPC分类号： H01L23/00 ,  H01L23/31

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03618 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05011 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/115 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13014 ,  H01L2224/13015 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2924/00012

摘要： A semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate (300) provided with a plurality of pads (301), columnar electrodes on the pads (301) and a solder ball (321) provided on the columnar electrode. The columnar electrode comprises a main body (307) and a groove in the main body (307), and an opening of the groove is overlapped with the top surface of the columnar electrode. The solder ball (321) comprises a metal bump (320) arranged on the top of the columnar electrode and a filling part (319) filled in the groove. The solder ball and the columnar electrode form a structure similar to a bolt; thus the binding force between the solder ball and the columnar electrode is improved.

摘要翻译： 半导体器件及其制造方法。 半导体器件包括设置有多个焊盘（301）的半导体衬底（300），焊盘上的柱状电极（301）和设置在柱状电极上的焊球（321）。 柱状电极包括主体（307）和主体（307）中的凹槽，并且凹槽的开口与柱状电极的顶表面重叠。 焊球（321）包括布置在柱状电极的顶部上的金属凸块（320）和填充在凹槽中的填充部分（319）。 焊球和柱状电极形成类似于螺栓的结构; 因此焊球和柱状电极之间的结合力提高。

公开(公告)号：US20150287688A1

公开(公告)日：2015-10-08

申请号：US14440872

申请日：2013-10-30

申请人： NANTONG FUJITSU MICROELECTRONICS CO., LTD.

发明人： Chang-Ming Lin ,  Lei Shi ,  Yujuan Tao

IPC分类号： H01L23/00 ,  H01L23/31

CPC分类号： H01L24/13 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03472 ,  H01L2224/03618 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05011 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/115 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13011 ,  H01L2224/13014 ,  H01L2224/13015 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2924/00012

摘要： A semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate (300) provided with a plurality of pads (301), columnar electrodes on the pads (301) and a solder ball (321) provided on the columnar electrode. The columnar electrode comprises a main body (307) and a groove in the main body (307), and an opening of the groove is overlapped with the top surface of the columnar electrode. The solder ball (321) comprises a metal bump (320) arranged on the top of the columnar electrode and a filling part (319) filled in the groove. The solder ball and the columnar electrode form a structure similar to a bolt; thus the binding force between the solder ball and the columnar electrode is improved.

摘要翻译： 半导体器件及其制造方法。 半导体器件包括设置有多个焊盘（301）的半导体衬底（300），焊盘上的柱状电极（301）和设置在柱状电极上的焊球（321）。 柱状电极包括主体（307）和主体（307）中的凹槽，并且凹槽的开口与柱状电极的顶表面重叠。 焊球（321）包括布置在柱状电极的顶部上的金属凸块（320）和填充在凹槽中的填充部分（319）。 焊球和柱状电极形成类似于螺栓的结构; 因此焊球和柱状电极之间的结合力提高。

公开(公告)号：US20130168851A1

公开(公告)日：2013-07-04

申请号：US13484289

申请日：2012-05-31

申请人： Yu-Min Lin ,  Chau-Jie Zhan ,  Tao-Chih Chang

发明人： Yu-Min Lin ,  Chau-Jie Zhan ,  Tao-Chih Chang

IPC分类号： H01L23/498 ,  H01L21/28

CPC分类号： H01L24/13 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05613 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/115 ,  H01L2224/11502 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11906 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/13184 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/8181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2224/1146

摘要： A bump structure includes a substrate, a pad, an electrode and a protruding electrode. The pad is disposed on the substrate. The electrode is formed by a first metal material and disposed on the pad. The protruding electrode is formed by a second metal material and disposed on the electrode, wherein a cross-sectional area of the protruding electrode is less than a cross-sectional area of the electrode.

摘要翻译： 凸块结构包括基板，焊盘，电极和突出电极。 衬垫设置在衬底上。 电极由第一金属材料形成并设置在焊盘上。 突起电极由第二金属材料形成并设置在电极上，其中突出电极的横截面面积小于电极的横截面面积。