公开(公告)号：US4358093A

公开(公告)日：1982-11-09

申请号：US199200

申请日：1980-10-21

申请人： Yuji Shimoyama ,  Fumiya Yanagishima ,  Hideo Sunami ,  Munetoshi Suzuki ,  Hiromasa Yamamoto ,  Gunji Sakamoto

发明人： Yuji Shimoyama ,  Fumiya Yanagishima ,  Hideo Sunami ,  Munetoshi Suzuki ,  Hiromasa Yamamoto ,  Gunji Sakamoto

IPC分类号： C21D9/56 ,  C21D11/00 ,  C21D9/54

CPC分类号： C21D9/56 ,  C21D11/00

摘要： A steel strip continuous annealing furnace comprises a heating zone, a soaking zone and cooling zones, wherein bridle rolls for isolating tension of a steel strip from those in adjacent sections of the steel strip are provided at the inlet and outlet of the furnace and in the furnace so as to define a plurality of tension control blocks and provide tension control mechanisms for controlling the tensions of the steel strip in the respective tension control blocks, so that appropriate tensions can be rendered to the steel strip in the respective zones of the furnace, thereby enabling to secure the safe and satisfactory operating conditions.

摘要翻译： 钢带连续退火炉包括加热区，均热区和冷却区，其中在炉的入口和出口处设置用于将钢带的张力与钢带的相邻部分中的张力隔离的带轮， 炉，以便限定多个张力控制块，并且提供用于控制各个张力控制块中的钢带的张力的张力控制机构，使得可以对炉的各个区域中的钢带进行适当的张力， 从而确保安全和令人满意的操作条件。

公开(公告)号：US4363471A

公开(公告)日：1982-12-14

申请号：US199199

申请日：1980-10-21

申请人： Fumiya Yanagishima ,  Yuji Shimoyama ,  Hideo Sunami ,  Yukio Ida ,  Goji Katsushima ,  Munetoshi Suzuki ,  Takeo Ohnishi

发明人： Fumiya Yanagishima ,  Yuji Shimoyama ,  Hideo Sunami ,  Yukio Ida ,  Goji Katsushima ,  Munetoshi Suzuki ,  Takeo Ohnishi

IPC分类号： C21D9/56 ,  C21D9/573

CPC分类号： C21D9/56 ,  C21D9/573

摘要： A steel strip continuous annealing apparatus comprising: a steel strip feeder; a heating-soaking zone for heating and soaking a steel strip at a predetermined temperature; a first cooling zone for rapidly cooling the steel strip at a predetermined cooling rate; a second cooling zone for slowly cooling the steel strip or holding same at a predetermined temperature; a third cooling zone for cooling the steel strip to substantially room temperature; and a steel strip carryout device; wherein the first cooling zone incorporates therein forcible cooling means, the second cooling zone incorporates therein hot-cold change-over means and the third cooling zone incorporates therein forcible cooling means, while said steel strip continuous annealing apparatus further comprises: means for directly bypassing the steel strip from the heating-soaking zone through a first bypass passageway to the second cooling zone; and means for directly bypassing the steel strip from the first cooling zone through a second bypass passageway to the steel strip carry-out device; so that the steel strips different in dimensions and required heat cycle can be efficiently annealed.

摘要翻译： 一种钢带连续退火装置，包括：钢带供料器; 用于在预定温度下加热和浸渍钢带的加热均热区; 用于以预定冷却速度快速冷却钢带的第一冷却区; 第二冷却区，用于在预定温度下缓慢冷却钢带或将其保持; 用于将钢带冷却至基本室温的第三冷却区; 和钢带搬运装置; 其中所述第一冷却区包含强制冷却装置，所述第二冷却区包括热冷转换装置，并且所述第三冷却区包含强制冷却装置，而所述钢带连续退火装置还包括：用于直接绕过 从加热均热区通过第一旁路通道到第二冷却区的钢带; 以及用于通过第二旁通通道将钢带从第一冷却区域直接旁路到钢带进给装置的装置; 使得尺寸不同的钢带和所需的热循环可以被有效地退火。

公开(公告)号：US4363472A

公开(公告)日：1982-12-14

申请号：US201586

申请日：1980-10-28

申请人： Yuji Shimoyama ,  Fumiya Yanagishima ,  Hideo Sunami ,  Yukio Ida ,  Goji Katsushima ,  Takeo Ohnishi ,  Takeo Fukushima

发明人： Yuji Shimoyama ,  Fumiya Yanagishima ,  Hideo Sunami ,  Yukio Ida ,  Goji Katsushima ,  Takeo Ohnishi ,  Takeo Fukushima

IPC分类号： C21D1/26 ,  C21D9/573

CPC分类号： C21D9/573

摘要： A steel strip continuous annealing apparatus comprising: a steel strip feeder; a heating-soaking zone for heating and soaking the steel strip at a predetermined temperature; a first cooling zone for rapidly cooling the steel strip at a predetermined cooling rate; a second cooling zone for slowly cooling the steel strip or holding same at a predetermined temperature; a third cooling zone for cooling the steel strip to substantially the room temperature; and a steel strip carry-out device; wherein the first cooling zone incorporates therein forcible cooling means, the second cooling zone incorporates therein hot-cold change-over means and said forcible cooling means incorporated in the first cooling zone is provided thereon with self-cooling means; so that steel strips of various grades of steel different in required heat cycle to be applied thereto can be efficiently and stably annealed.

摘要翻译： 一种钢带连续退火装置，包括：钢带供料器; 用于将钢带加热和浸泡在预定温度的加热均热区; 用于以预定冷却速度快速冷却钢带的第一冷却区; 第二冷却区，用于在预定温度下缓慢冷却钢带或将其保持; 用于将钢带冷却至基本上为室温的第三冷却区; 和钢带搬运装置; 其特征在于，所述第一冷却区包含强制冷却装置，所述第二冷却区包括热冷转换装置，并且在所述第一冷却区中结合的所述强制冷却装置设置有自冷却装置; 从而可以有效且稳定地退火，使得在所需的热循环中不同的各种等级的钢的钢带被施加到其上。

公开(公告)号：US4561909A

公开(公告)日：1985-12-31

申请号：US551503

申请日：1983-11-14

申请人： Hideo Sunami ,  Hideo Kuguminato ,  Yoshio Izumiyama ,  Fumiya Yanagishima ,  Takashi Obara ,  Kazuo Mochizuki

发明人： Hideo Sunami ,  Hideo Kuguminato ,  Yoshio Izumiyama ,  Fumiya Yanagishima ,  Takashi Obara ,  Kazuo Mochizuki

IPC分类号： C22C38/00 ,  C21D8/02 ,  C21D9/46 ,  C21D9/52 ,  C22C38/06

CPC分类号： C21D8/0273 ,  C21D9/52 ,  C21D8/0226 ,  C21D8/0236

摘要： A method of manufacturing T-3 grade low temper blackplates having an excellent corrosion resistance by a continuous annealing process. In this method, after a continuously cast slab of low carbon aluminum killed steel consisting of 0.02-0.09% of C, not more than 0.04% of Si, 0.15-0.40% of Mn, 0.003-0.02% of soluble Al, not more than 0.0040% in total of N and the balance of Fe and inevitable impurities is subjected to hot rolling, coiled at a temperature of less than 580.degree. C., pickled and subjected to cold rolling, the resulting cold-rolled strip is subjected to such a continuous annealing that the strip is maintained at a temperature above 680.degree. C. for at least 20 seconds, quenched up to a temperature below 500.degree. C. at a cooling rate of 10.degree.-500.degree. C./sec, maintained at a temperature of 350.degree.-500.degree. C. for at least 20 seconds and cooled to room temperature.

摘要翻译： 通过连续退火工艺制造具有优异耐腐蚀性的T-3级低温黑板的方法。 在该方法中，在由0.02-0.09％的C，不超过0.04％的Si，0.15-0.40％的Mn，0.003-0.02％的可溶性Al组成的低碳铝杀死钢的连续铸造板坯之后，不大于 将总计0.0040％的N和余量的Fe和不可避免的杂质进行热轧，在低于580℃的温度下卷取，酸洗并进行冷轧，将得到的冷轧带材 连续退火，将条保持在高于680℃的温度下至少20秒，以10℃-500℃/秒的冷却速率淬火至低于500℃的温度，保持在温度 350℃-500℃至少20秒，并冷却至室温。

公开(公告)号：US06825527B2

公开(公告)日：2004-11-30

申请号：US10454527

申请日：2003-06-05

申请人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

发明人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

IPC分类号： H01L2972

CPC分类号： B82Y10/00 ,  G11C16/02 ,  H01L27/108 ,  H01L29/511 ,  H01L29/772 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/7883 ,  H01L29/7888

摘要： A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-only Memory) cannot be configured as a high speed/large capacity memory. A semiconductor memory device of the present invention realizes nonvolatile characteristic by shielding a drain functioning as a memory node from a leakage current by a tunnel insulator, and also realizes stable and high speed operation by adding a transistor for reading to a memory cell.

摘要翻译： 通常由于漏电流而丢失存储在其中的信息，所以每0.1秒钟通常刷新高速/大容量DRAM（动态随机存取存储器）。 在断电时，DRAM也会丢失存储在其中的信息。 同时，非易失性ROM（只读存储器）不能被配置为高速/大容量存储器。本发明的半导体存储器件通过屏蔽用作存储器节点的漏极与隧道的泄漏电流来实现非易失性特性 绝缘体，并且通过将用于读取的晶体管添加到存储单元来实现稳定和高速操作。

公开(公告)号：US06642574B2

公开(公告)日：2003-11-04

申请号：US09727497

申请日：2000-12-04

申请人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

发明人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

IPC分类号： H01L2972

CPC分类号： B82Y10/00 ,  G11C16/02 ,  H01L27/108 ,  H01L29/511 ,  H01L29/772 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/7883 ,  H01L29/7888

摘要： A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-only Memory) cannot be configured as a high speed/large capacity memory. A semiconductor memory device of the present invention realizes nonvolatile characteristic by shielding a drain functioning as a memory node from a leakage current by a tunnel insulator, and also realizes stable and high speed operation by adding a transistor for reading to a memory cell.

摘要翻译： 通常由于漏电流而丢失存储在其中的信息，所以每0.1秒钟通常刷新高速/大容量DRAM（动态随机存取存储器）。 在断电时，DRAM也会丢失存储在其中的信息。 同时，非易失性ROM（只读存储器）不能被配置为高速/大容量存储器。本发明的半导体存储器件通过屏蔽用作存储器节点的漏极与隧道的泄漏电流来实现非易失性特性 绝缘体，并且通过将用于读取的晶体管添加到存储单元来实现稳定和高速操作。

公开(公告)号：US5357131A

公开(公告)日：1994-10-18

申请号：US93033

申请日：1993-07-19

申请人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

发明人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L27/108 ,  H01L27/12

CPC分类号： H01L27/1203 ,  H01L21/0337 ,  H01L21/3086 ,  H01L27/1082 ,  H01L27/10832 ,  H01L27/10841

摘要： A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.

摘要翻译： 一种半导体存储器，其中每个电容器的一部分形成在由形成在半导体衬底中的凹部包围的岛状区域的侧壁上，并且岛状区域和其它区域通过凹部电隔离。

公开(公告)号：US5106775A

公开(公告)日：1992-04-21

申请号：US564470

申请日：1990-07-30

申请人： Toru Kaga ,  Yoshifumi Kawamoto ,  Hideo Sunami

发明人： Toru Kaga ,  Yoshifumi Kawamoto ,  Hideo Sunami

IPC分类号： H01L27/04 ,  H01L21/28 ,  H01L21/311 ,  H01L21/334 ,  H01L21/762 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/06 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28211 ,  H01L21/31111 ,  H01L27/10841 ,  H01L27/10864 ,  H01L29/0657 ,  H01L29/66181 ,  H01L29/7827 ,  H01L29/51

摘要： A semiconductor memory comprises a switching device and a charge-storage device disposed at the upper and lower sides, respectively, of each of semiconductor islands. The islands are formed on a semiconductor substrate that is completely isolated from the semiconductor substrate by an insulator. The switching device and charge-storage device are substantially the same width. The memory cell structure is extremely small. The cell structure is highly resistant to alpha-particles and is formed self-aligned. During manufacture, the SiO.sub.2 island is oxidized adjacent its lower end to insulate the island from the substrate.

公开(公告)号：US4692994A

公开(公告)日：1987-09-15

申请号：US857200

申请日：1986-04-29

申请人： Masahiro Moniwa ,  Terunori Warabisako ,  Hideo Sunami

发明人： Masahiro Moniwa ,  Terunori Warabisako ,  Hideo Sunami

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/092 ,  H01L21/425

CPC分类号： H01L29/66772 ,  H01L21/76248 ,  H01L21/8221 ,  H01L21/8238 ,  H01L29/42392 ,  H01L27/0688 ,  H01L27/0921 ,  Y10S148/15 ,  Y10S148/164 ,  Y10S438/91

摘要： A process for manufacturing semiconductor devices, comprising steps for obtaining a multilayered structure consisting of semiconductors and insulating films, by forming a microbridge which consists of a semiconductor in the form of a connecting bar or a one-side supported bar, and by forming an insulating film by oxidizing the exposed surface of the microbridge. The semiconductor device manufactured by the process of the invention exhibits good interface properties between the insulating film and the semiconductor layer. The invention makes it possible to easily manufacture a variety of MOSFETs with the SOI structure, which exhibit excellent characteristics.

摘要翻译： 一种用于制造半导体器件的方法，包括通过形成由连接棒或单侧支撑棒形式的半导体构成的微桥，通过形成绝缘体的步骤，获得由半导体和绝缘膜组成的多层结构 通过氧化微桥的暴露表面的膜。 通过本发明的方法制造的半导体器件在绝缘膜和半导体层之间表现出良好的界面性质。 本发明使得可以容易地制造具有优异特性的具有SOI结构的各种MOSFET。

公开(公告)号：US4656492A

公开(公告)日：1987-04-07

申请号：US786715

申请日：1985-10-15

申请人： Hideo Sunami ,  Hiroo Masuda ,  Yoshiaki Kamigaki ,  Katsuhiro Shimohigashi ,  Eiji Takeda

发明人： Hideo Sunami ,  Hiroo Masuda ,  Yoshiaki Kamigaki ,  Katsuhiro Shimohigashi ,  Eiji Takeda

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/7838 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/78 ,  H01L29/7836

摘要： An insulated gate field effect transistor is formed in one surface of a semiconductor substrate. The surface portion of a channel has an impurity distribution of the conduction type opposite to that of the substrate, which the deeper portion of the channel has an impurity distribution of the same conduction type as that of the substrate. Moreover, at least one of a source and a drain is formed of such an impurity layer of the conduction type opposite to that of the substrate as has its impurity distribution gently sloped by double diffusion processes.

摘要翻译： 绝缘栅场效应晶体管形成在半导体衬底的一个表面中。 通道的表面部分具有与衬底相反的导电类型的杂质分布，其中沟道的较深部分具有与衬底相同导电类型的杂质分布。 此外，源极和漏极中的至少一个由具有与衬底相反的导电类型的杂质层形成，其杂质分布通过双扩散过程缓缓倾斜。