公开(公告)号：US08003900B2

公开(公告)日：2011-08-23

申请号：US12867341

申请日：2009-02-18

申请人： Yuji Watazu ,  Shuzo Okumura ,  Keishiro Murata ,  Asako Sakashita ,  Takahiro Okabe

发明人： Yuji Watazu ,  Shuzo Okumura ,  Keishiro Murata ,  Asako Sakashita ,  Takahiro Okabe

IPC分类号： H01L23/06

CPC分类号： H01Q1/243 ,  B32B1/02 ,  B32B5/142 ,  B32B7/12 ,  B32B15/02 ,  B32B15/04 ,  B32B15/08 ,  B32B15/20 ,  B32B23/042 ,  B32B23/20 ,  B32B27/06 ,  B32B27/302 ,  B32B27/304 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B2307/206 ,  B32B2307/412 ,  B32B2307/714 ,  B32B2457/00 ,  B32B2509/00 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q1/40 ,  H01Q15/14 ,  H01Q15/16 ,  H04M1/0283 ,  H05K9/0047 ,  Y10T428/24033 ,  Y10T428/24636 ,  Y10T428/2481

摘要： A mesh sheet of the present invention is a mesh sheet in which a metal mesh comprising fine bands is laminated on a surface of a base substrate, the mesh sheet being used and adhered along a surface of an arbitrary member having a curved surface portion. The metal mesh has a part in which the fine band positioned between connection points of the fine bands which are adjacent to each other is a curved line so as to absorb stress relative to deformation to be placed along the curved surface portion with a large curvature without destructing the metal mesh.

摘要翻译： 本发明的网眼片是在基材的表面层叠有包含细带的金属网的网眼片，沿着具有曲面部的任意构件的表面使用并粘接网状片。 金属网具有位于彼此相邻的细带的连接点之间的细带在其中彼此相邻的部分，以便相对于沿着具有大曲率的曲面部分放置的变形吸收应力而没有 破坏金属网。

公开(公告)号：US20100326722A1

公开(公告)日：2010-12-30

申请号：US12867341

申请日：2009-02-18

申请人： Yuji Watazu ,  Shuzo Okumura ,  Keishiro Murata ,  Asako Sakashita ,  Takahiro Okabe

发明人： Yuji Watazu ,  Shuzo Okumura ,  Keishiro Murata ,  Asako Sakashita ,  Takahiro Okabe

IPC分类号： H01L23/06 ,  B32B27/12 ,  B32B3/00

CPC分类号： H01Q1/243 ,  B32B1/02 ,  B32B5/142 ,  B32B7/12 ,  B32B15/02 ,  B32B15/04 ,  B32B15/08 ,  B32B15/20 ,  B32B23/042 ,  B32B23/20 ,  B32B27/06 ,  B32B27/302 ,  B32B27/304 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B2307/206 ,  B32B2307/412 ,  B32B2307/714 ,  B32B2457/00 ,  B32B2509/00 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q1/40 ,  H01Q15/14 ,  H01Q15/16 ,  H04M1/0283 ,  H05K9/0047 ,  Y10T428/24033 ,  Y10T428/24636 ,  Y10T428/2481

摘要： A mesh sheet of the present invention is a mesh sheet in which a metal mesh comprising fine bands is laminated on a surface of a base substrate, the mesh sheet being used and adhered along a surface of an arbitrary member having a curved surface portion. The metal mesh has a part in which the fine band positioned between connection points of the fine bands which are adjacent to each other is a curved line so as to absorb stress relative to deformation to be placed along the curved surface portion with a large curvature without destructing the metal mesh.

摘要翻译： 本发明的网眼片是在基材的表面层叠有包含细带的金属网的网眼片，沿着具有曲面部的任意构件的表面使用并粘接网状片。 金属网具有位于彼此相邻的细带的连接点之间的细带在其中彼此相邻的部分，以便相对于沿着具有大曲率的曲面部分放置的变形吸收应力而没有 破坏金属网。

公开(公告)号：US4258379A

公开(公告)日：1981-03-24

申请号：US78452

申请日：1979-09-24

申请人： Tomoyuki Watanabe ,  Takahiro Okabe ,  Minoru Nagata ,  Tohru Nakamura ,  Kenji Kaneko ,  Yutaka Okada ,  Norio Anzai ,  Takanori Nishimura ,  Takashi Agatsuma

发明人： Tomoyuki Watanabe ,  Takahiro Okabe ,  Minoru Nagata ,  Tohru Nakamura ,  Kenji Kaneko ,  Yutaka Okada ,  Norio Anzai ,  Takanori Nishimura ,  Takashi Agatsuma

IPC分类号： H01L21/74 ,  H01L21/761 ,  H01L21/8226 ,  H01L27/02 ,  H01L27/04 ,  H03K19/091

CPC分类号： H01L21/74 ,  H01L21/761 ,  H01L21/8226 ,  H01L27/0244

摘要： A semiconductor IC device in which an N-type semiconductor layer is formed in a P-type semiconductor substrate; the N-type layer is divided by a P.sup.+ -type insulation region into plural island regions; and an IIL is formed in a first island region while an NPN transistor is formed in a second island region, wherein an N-type up-diffused layer is formed from the bottom of the first island region up while an N-type well region is formed from the surface of the first island region down, and N.sup.+ -type buried layers are formed near the bottoms of the first and the second island region.

摘要翻译： 一种在P型半导体衬底中形成N型半导体层的半导体IC器件; N型层被P +型绝缘区划分成多个岛状区域; 并且在第一岛状区域中形成IIL，而在第二岛状区域中形成NPN晶体管，其中N型上扩散层从第一岛区的底部向上形成，而N型阱区为 从第一岛区域的表面向下形成，并且在第一岛区域和第二岛区域的底部附近形成N +型掩埋层。

公开(公告)号：US4246500A

公开(公告)日：1981-01-20

申请号：US7654

申请日：1979-01-29

申请人： Yutaka Okada ,  Tohru Nakamura ,  Takahiro Okabe

发明人： Yutaka Okada ,  Tohru Nakamura ,  Takahiro Okabe

IPC分类号： G05F3/26 ,  H03K19/091 ,  H03K19/08 ,  H03K19/20

CPC分类号： H03K19/091 ,  G05F3/265

摘要： A current mirror circuit wherein an I.sup.2 L circuit is employed as the load of a current mirror circuit formed of a PNP (NPN) transistor, the injector of the I.sup.2 L circuit is common with those of another group of I.sup.2 L circuits, and a predetermined current is derived from the PNP (NPN) transistor of the current mirror circuit.

摘要翻译： 一种电流镜电路，其中使用I2L电路作为由PNP（NPN）晶体管形成的电流镜电路的负载，I2L电路的注入器与另一组I2L电路的注入器相同，并且导出预定电流 来自电流镜电路的PNP（NPN）晶体管。

公开(公告)号：US4047119A

公开(公告)日：1977-09-06

申请号：US660819

申请日：1976-02-24

申请人： Yoshito Ohmura ,  Takahiro Okabe ,  Hiroshi Morozumi

发明人： Yoshito Ohmura ,  Takahiro Okabe ,  Hiroshi Morozumi

IPC分类号： H03F1/30 ,  H03F3/45 ,  H03K7/08 ,  H03K12/00 ,  H03K17/30

CPC分类号： H03K7/08

摘要： A transistor differential amplifier circuit includes a pair of NPN type amplifying transistors operated by a constant current source commonly connected to their emitters, and a pair of PNP type load transistors inserted in the collector circuits of said amplifying transistors, respectively. The load transistors are commonly biased with a constant voltage to operate within their saturation regions when input signals supplied on respective bases of the amplifying transistors are balanced, whereby pulse signals with a controlled duty ratio are obtained from the respective collectors of the amplifying transistors.

摘要翻译： 晶体管差分放大器电路包括由共同连接到它们的发射极的恒流源操作的一对NPN型放大晶体管，以及分别插在所述放大晶体管的集电极电路中的一对PNP型负载晶体管。 当在放大晶体管的各个基极上提供的输入信号被平衡时，负载晶体管通常以恒定的电压偏置以在其饱和区域内工作，从而从放大晶体管的各个集电极获得具有受控占空比的脉冲信号。

公开(公告)号：US4825281A

公开(公告)日：1989-04-25

申请号：US435552

申请日：1982-10-21

申请人： Kazuo Nakazato ,  Tohru Nakamura ,  Masatoshi Matsuda ,  Takao Miyazaki ,  Tokuo Kure ,  Takahiro Okabe ,  Minoru Nagata

发明人： Kazuo Nakazato ,  Tohru Nakamura ,  Masatoshi Matsuda ,  Takao Miyazaki ,  Tokuo Kure ,  Takahiro Okabe ,  Minoru Nagata

IPC分类号： H01L21/8222 ,  H01L21/033 ,  H01L21/3205 ,  H01L21/331 ,  H01L27/06 ,  H01L29/423 ,  H01L29/70 ,  H01L29/72 ,  H01L29/73 ,  H01L29/732 ,  H01L29/735 ,  H01L23/48 ,  H01L29/04 ,  H01L29/34

CPC分类号： H01L29/66272 ,  H01L21/033 ,  H01L29/42304 ,  H01L29/72 ,  H01L29/732 ,  H01L29/735

摘要： A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.

摘要翻译： 一种半导体器件，其中晶体管的有源区形成在设置在绝缘膜中的开口中，电极由形成在绝缘膜上的多晶硅膜引出，发射极和基极的上表面和暴露表面 的绝缘膜基本上均匀。

公开(公告)号：US4699005A

公开(公告)日：1987-10-13

申请号：US884298

申请日：1986-07-10

申请人： Takahiro Okabe

发明人： Takahiro Okabe

IPC分类号： G01P3/44 ,  G01P9/00

CPC分类号： G01P3/44

摘要： An apparatus for measuring angular velocity is provided with a microwave oscillator, closed-loop waveguide and a microwave-detector. The microwave oscillator generates microwaves and the waveguide which may employ a magic tee as a part thereof separates the microwaves to propagate one and the other of separated microwaves clockwise and counterclockwise therethrough, respectively. The microwave detector mixes and microwave-detects one and the other of the separated microwaves propagated through said waveguide. When the waveguide is in rotary motion, frequencies or phases between the separated microwaves differ from each other in dependence upon the angular velocity and the microwave detector produces an output signal corresponding to the difference in frequencies or in phases between the separated microwaves. The angular velocity of the waveguide is measured by the use of output alternating signal component corresponding to the frequency difference between the separated microwaves or by the use of output direct current signal component corresponding to the phase difference between the separated microwaves.

摘要翻译： 用于测量角速度的装置设置有微波振荡器，闭环波导和微波检测器。 微波振荡器产生微波，并且可以使用魔术三通作为其一部分的波导分开微波，以分别使分离的微波中的一个和另一个顺时针和逆时针传播。 微波检测器混合并微波检测通过所述波导传播的一个和另一个分离的微波。 当波导处于旋转运动时，分离的微波之间的频率或相位根据角速度彼此不同，并且微波检测器产生对应于分离的微波之间的频率差异或相位的输出信号。 通过使用对应于分离的微波之间的频率差的输出交变信号分量或通过使用对应于分离的微波之间的相位差的输出直流信号分量来测量波导的角速度。

公开(公告)号：US4609407A

公开(公告)日：1986-09-02

申请号：US563036

申请日：1983-12-19

申请人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

发明人： Tamura Masao ,  Hirotsugu Kozuka ,  Yasuo Wada ,  Makoto Ohkura ,  Tamura Hiroshi ,  Takashi Tokuyama ,  Takahiro Okabe ,  Osamu Minato ,  Shinya Ohba

IPC分类号： H01L21/268 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/04 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L21/8221 ,  H01L21/268 ,  H01L27/0233 ,  H01L27/0688 ,  H01L29/04

摘要： Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

摘要翻译： 这里公开了一种半导体器件，其具有形成在单晶半导体膜中的至少一个下电阻区域，该至少一个下电阻区域被形成为连续地涂覆单晶半导体衬底和形成在衬底表面上的绝缘膜。 由于使用上述单晶半导体膜，因此可以获得从现有技术的半导体器件中获得的许多优点。 通过用激光束照射多晶或非晶半导体膜来形成上述单晶半导体膜。

公开(公告)号：US20100150545A1

公开(公告)日：2010-06-17

申请号：US12312223

申请日：2007-10-24

申请人： Satoshi Imai ,  Mitsuru Ichikawa ,  Fujio Kanai ,  Atsushi Horidan ,  Takahiro Okabe

发明人： Satoshi Imai ,  Mitsuru Ichikawa ,  Fujio Kanai ,  Atsushi Horidan ,  Takahiro Okabe

IPC分类号： G03B17/02

CPC分类号： H04N5/2253 ,  G02B7/102 ,  G03B17/02 ,  G03B2217/002 ,  H04M1/0214 ,  H04M1/0264 ,  H04N5/2254 ,  H04N5/2257

摘要： A camera module advantageous in simplifying an assembly process is provided. A camera module 22 includes a barrel unit 66 having a housing space S; a lens holding unit 68 which holds an imaging optical system 34, which is housed in the housing space S, and which is supported such that the lens holding unit 68 is movable along an optical axis of the imaging optical system 34; an image pickup element 29 which is disposed in the barrel unit 66 and which picks up an object image guided by the imaging optical system 34; and a driving unit 72 which moves the lens holding unit 68 along the optical axis of the imaging optical system 34. The barrel unit 66 includes an inner barrel 80 in which the housing space S is formed and an outer barrel 78 disposed outside the inner barrel 80. A retaining plate 86 includes a front plate portion 86A and two side plate portions 86B. The retaining plate 86 clamps the inner barrel 80 and the outer barrel 78 in the optical axis direction in the state in which the front plate portion 86A retains a front end of the outer barrel 78 and distal ends of the two side plate portions 86B retain the rear end-face wall 8002.

摘要翻译： 提供了有利于简化组装过程的相机模块。 相机模块22包括具有容纳空间S的筒单元66; 保持单元68，其保持容纳在容纳空间S中的成像光学系统34，并且被支撑为使得透镜保持单元68能够沿着成像光学系统34的光轴移动; 图像拾取元件29，其设置在镜筒单元66中并拾取由成像光学系统34引导的物体图像; 以及驱动单元72，其沿着成像光学系统34的光轴移动透镜保持单元68.筒单元66包括内筒80，其中形成有容纳空间S，以及设置在内筒外侧的外筒78 保持板86包括前板部分86A和两个侧板部分86B。 在前板部86A保持外筒78的前端的状态下，保持板86在光轴方向夹持内筒80和外筒78，两侧板部86B的前端保持 后端面壁8002。

公开(公告)号：US4998155A

公开(公告)日：1991-03-05

申请号：US73305

申请日：1987-07-13

申请人： Kikuo Watanabe ,  Tohru Nakamura ,  Toru Toyabe ,  Takahiro Okabe ,  Minoru Nagata

发明人： Kikuo Watanabe ,  Tohru Nakamura ,  Toru Toyabe ,  Takahiro Okabe ,  Minoru Nagata

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/72 ,  H01L29/732

CPC分类号： H01L29/1008 ,  H01L29/1004 ,  H01L29/72 ,  Y10S257/906

摘要： A radiation-hardened semiconductor device including a bipolar transistor is disclosed in which a highly-doped layer equal in conductivity type to and larger in impurity concentration than the base region of the transistor is formed in that portion of the surface of the base region which exists beneath an insulating film, to prevent minority carriers injected into the base region, from reaching the above-mentioned surface portion. Thus, the injected minority carriers can reach a collector region without being extinguished by the recombination at the surface of the base region.

摘要翻译： 公开了一种包括双极晶体管的辐射硬化半导体器件，其中在存在的基极区域的表面部分中形成了与晶体管的基极区相比导电类型等于或大于杂质浓度的高掺杂层 在绝缘膜下面，以防止注入基底区域的少数载流子到达上述表面部分。 因此，注入的少数载流子可以到达集电极区，而不会被基区表面的复合所熄灭。