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公开(公告)号：US20110084314A1
公开(公告)日：2011-04-14
申请号：US12900379
申请日：2010-10-07
申请人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J.L. de Jong , Deepak C. Sekar , Zeev Wurman
发明人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J.L. de Jong , Deepak C. Sekar , Zeev Wurman
IPC分类号： H01L23/52
CPC分类号： H01L27/0688 , G03F9/7076 , G03F9/7084 , H01L21/268 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823871 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/544 , H01L24/73 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/42392 , H01L29/458 , H01L29/66272 , H01L29/66545 , H01L29/66621 , H01L29/66848 , H01L29/66901 , H01L29/732 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/808 , H01L29/812 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/80001 , H01L2924/00012 , H01L2924/01015
摘要： A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
摘要翻译： 系统包括半导体器件。 半导体器件包括第一单晶硅层，其包括第一晶体管，第一对准标记和覆盖在第一单晶硅层上的至少一个金属层，其中所述至少一个金属层比其它材料包括铜或铝; 以及覆盖所述至少一个金属层的第二单晶硅层。 第二单晶硅层包括以基本平行的带布置的多个第二晶体管。 多个频带中的每一个包括沿着重复图案的轴的第二晶体管的一部分。
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公开(公告)号：US08395191B2
公开(公告)日：2013-03-12
申请号：US12900379
申请日：2010-10-07
申请人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
发明人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/76 , H01L29/76 , H01L29/772 , H01L25/065
CPC分类号： H01L27/0688 , G03F9/7076 , G03F9/7084 , H01L21/268 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823871 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/544 , H01L24/73 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/42392 , H01L29/458 , H01L29/66272 , H01L29/66545 , H01L29/66621 , H01L29/66848 , H01L29/66901 , H01L29/732 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/808 , H01L29/812 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/80001 , H01L2924/00012 , H01L2924/01015
摘要： A semiconductor device including a first single crystal layer with first transistors and a first alignment mark; at least one metal layer overlying the first single crystal layer, wherein the at least one metal layer includes copper or aluminum; and a second layer including activated dopant regions, the second layer overlying the at least one metal layer, wherein the second layer includes second transistors, wherein the second transistors are processed aligned to the first alignment mark with less than 100 nm alignment error, and the second transistors include mono-crystal, horizontally-oriented transistors.
摘要翻译： 一种半导体器件，包括具有第一晶体管的第一单晶层和第一对准标记; 覆盖所述第一单晶层的至少一个金属层，其中所述至少一个金属层包括铜或铝; 以及包括激活的掺杂剂区域的第二层，所述第二层覆盖所述至少一个金属层，其中所述第二层包括第二晶体管，其中所述第二晶体管被处理成与所述第一对准标记对齐，具有小于100nm的对准误差， 第二晶体管包括单晶，水平取向晶体管。
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公开(公告)号：US08907442B2
公开(公告)日：2014-12-09
申请号：US13492382
申请日：2012-06-08
申请人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
发明人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
IPC分类号： H01L21/50 , H01L21/98 , H01L21/822 , G03F9/00 , H01L21/762 , H01L21/84 , H01L23/544 , H01L27/02 , H01L27/06 , H01L27/105 , H01L27/108 , H01L27/11 , H01L27/112 , H01L27/115 , H01L27/118 , H01L27/12 , H01L23/48
CPC分类号： H01L27/0688 , G03F9/7076 , G03F9/7084 , H01L21/268 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823871 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/544 , H01L24/73 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/42392 , H01L29/458 , H01L29/66272 , H01L29/66545 , H01L29/66621 , H01L29/66848 , H01L29/66901 , H01L29/732 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/808 , H01L29/812 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/80001 , H01L2924/00012 , H01L2924/01015
摘要： A semiconductor device, including: a first layer including first transistors; an interconnection layer overlying the first transistors, the interconnection layer providing interconnection for the first transistors; a bonding layer overlying the interconnection layer; a second layer overlying the bonding layer; and a carrier substrate for the transferring of the second layer, where the second layer includes at least one through second layer via, where the at least one through second layer via has a diameter of less than 100 nm, where the second layer includes a plurality of second transistors, and where the second layer is transferred from a donor wafer.
摘要翻译： 一种半导体器件，包括：包括第一晶体管的第一层; 覆盖所述第一晶体管的互连层，所述互连层为所述第一晶体管提供互连; 覆盖所述互连层的接合层; 覆盖结合层的第二层; 以及用于转移第二层的载体衬底，其中第二层包括至少一个贯穿第二层通孔，其中至少一个贯穿第二层通孔具有小于100nm的直径，其中第二层包括多个 的第二晶体管，并且其中第二层从施主晶片转移。
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公开(公告)号：US08237228B2
公开(公告)日：2012-08-07
申请号：US13246384
申请日：2011-09-27
申请人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
发明人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
IPC分类号： H01L27/092
CPC分类号： H01L27/0688 , G03F9/7076 , G03F9/7084 , H01L21/268 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823871 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/544 , H01L24/73 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/42392 , H01L29/458 , H01L29/66272 , H01L29/66545 , H01L29/66621 , H01L29/66848 , H01L29/66901 , H01L29/732 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/808 , H01L29/812 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/80001 , H01L2924/00012 , H01L2924/01015
摘要： A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.
摘要翻译： 系统包括半导体器件。 该半导体器件包括包括第一晶体管的第一半导体层，其中第一晶体管通过包括铝或铜的至少一个金属层互连。 第二单结晶半导体层包括第二晶体管并且覆盖至少一个金属层，其中第二单结晶半导体层的厚度小于150nm，并且至少一个第二晶体管是N型晶体管 并且所述第二晶体管中的至少一个是P型晶体管。
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公开(公告)号：US20120273955A1
公开(公告)日：2012-11-01
申请号：US13492382
申请日：2012-06-08
申请人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
发明人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
CPC分类号： H01L27/0688 , G03F9/7076 , G03F9/7084 , H01L21/268 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823871 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/544 , H01L24/73 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/42392 , H01L29/458 , H01L29/66272 , H01L29/66545 , H01L29/66621 , H01L29/66848 , H01L29/66901 , H01L29/732 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/808 , H01L29/812 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/80001 , H01L2924/00012 , H01L2924/01015
摘要： A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.
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公开(公告)号：US20120012895A1
公开(公告)日：2012-01-19
申请号：US13246384
申请日：2011-09-27
申请人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
发明人： Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Zeev Wurman
IPC分类号： H01L27/118
CPC分类号： H01L27/0688 , G03F9/7076 , G03F9/7084 , H01L21/268 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823871 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/544 , H01L24/73 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/42392 , H01L29/458 , H01L29/66272 , H01L29/66545 , H01L29/66621 , H01L29/66848 , H01L29/66901 , H01L29/732 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/808 , H01L29/812 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/80001 , H01L2924/00012 , H01L2924/01015
摘要： A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.
摘要翻译： 系统包括半导体器件。 该半导体器件包括包括第一晶体管的第一半导体层，其中第一晶体管通过包括铝或铜的至少一个金属层互连。 第二单结晶半导体层包括第二晶体管并且覆盖至少一个金属层，其中第二单结晶半导体层的厚度小于150nm，并且至少一个第二晶体管是N型晶体管 并且所述第二晶体管中的至少一个是P型晶体管。
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公开(公告)号：US20110199116A1
公开(公告)日：2011-08-18
申请号：US12706520
申请日：2010-02-16
申请人： Zvi Or-Bach , Brian Cronquist , Zeev Wurman , Israel Beinglass , J. L. de Jong
发明人： Zvi Or-Bach , Brian Cronquist , Zeev Wurman , Israel Beinglass , J. L. de Jong
IPC分类号： H03K19/173 , H01L23/538 , H01L21/306 , H01L21/26 , H01L21/70
CPC分类号： H01L21/76254 , H01L21/76232 , H01L21/8221 , H01L21/84 , H01L23/481 , H01L23/49827 , H01L24/16 , H01L24/48 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/1203 , H01L2224/13025 , H01L2224/131 , H01L2224/16225 , H01L2224/17181 , H01L2224/48145 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00013 , H01L2924/00014 , H01L2924/01019 , H01L2924/01066 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2924/1436 , H01L2924/1443 , H01L2924/15311 , H01L2924/3011 , H01L2924/014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： A Configurable device comprising, a logic die connected by at least one through silicon-via (TSV), to an input/output (I/O) die.
摘要翻译： 一种可配置设备，包括通过至少一个通过硅通孔（TSV）连接到输入/输出（I / O）管芯的逻辑管芯。
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公开(公告)号：US20110031997A1
公开(公告)日：2011-02-10
申请号：US12577532
申请日：2009-10-12
申请人： Zvi Or-Bach , Brian Cronquist , Zeev Wurman , Reza Arghavani , Israel Beinglass
发明人： Zvi Or-Bach , Brian Cronquist , Zeev Wurman , Reza Arghavani , Israel Beinglass
IPC分类号： H03K19/173
CPC分类号： H03K19/17704 , H01L2224/16145 , H01L2224/32145 , H01L2224/73204 , H01L2224/73265 , H01L2924/181 , H03K19/17736 , H03K19/1778 , H03K19/17796 , H01L2924/00012 , H01L2924/00
摘要： A method is presented that may be used to provide a Configurable Logic device, which may be Field Programmable with volume flexibility. A method of fabricating an integrated circuit may include the steps of: providing a semiconductor substrate and forming a borderless logic array, and it may also include the step of forming a plurality of antifuse configurable interconnect circuits and/or a plurality of transistors to configure at least one antifuse. The programming transistors may be fabricated over the at least one antifuse.
摘要翻译： 提出了一种可用于提供可配置逻辑器件的方法，其可以是具有体积灵活性的现场可编程的。 制造集成电路的方法可以包括以下步骤：提供半导体衬底并形成无边界逻辑阵列，并且还可以包括形成多个反熔丝可配置互连电路和/或多个晶体管以在 最少一个反熔丝。 可以在至少一个反熔丝上制造编程晶体管。
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公开(公告)号：US09509313B2
公开(公告)日：2016-11-29
申请号：US13041406
申请日：2011-03-06
申请人： Zvi Or-Bach , Zeev Wurman
发明人： Zvi Or-Bach , Zeev Wurman
IPC分类号： H01L21/00 , H03K19/177
CPC分类号： H03K19/17748 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/14 , H01L2924/15311 , H03K19/17736 , H03K19/1778 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising first layer comprising multiplicity of first transistors and, second layer comprising multiplicity of second transistors and, at least one function constructed by the first transistors are structure so it could be replaced by a function constructed by the second transistors.
摘要翻译： 一种半导体器件，包括包含多个第一晶体管的第一层，以及包括多个第二晶体管的第二层，以及由第一晶体管构成的至少一个功能是结构，因此可由第二晶体管构成的功能代替。
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公开(公告)号：US20120193621A1
公开(公告)日：2012-08-02
申请号：US13041406
申请日：2011-03-06
申请人： Zvi Or-Bach , Zeev Wurman
发明人： Zvi Or-Bach , Zeev Wurman
IPC分类号： H01L25/065
CPC分类号： H03K19/17748 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/14 , H01L2924/15311 , H03K19/17736 , H03K19/1778 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising first layer comprising multiplicity of first transistors and, second layer comprising multiplicity of second transistors and, at least one function constructed by the first transistors are structure so it could be replaced by a function constructed by the second transistors.
摘要翻译： 一种半导体器件，包括包含多个第一晶体管的第一层，以及包括多个第二晶体管的第二层，以及由第一晶体管构成的至少一个功能是结构，因此可由第二晶体管构成的功能代替。
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