公开(公告)号：US20110084314A1

公开(公告)日：2011-04-14

申请号：US12900379

申请日：2010-10-07

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J.L. de Jong ,  Deepak C. Sekar ,  Zeev Wurman

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J.L. de Jong ,  Deepak C. Sekar ,  Zeev Wurman

IPC分类号： H01L23/52

CPC分类号： H01L27/0688 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/268 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/544 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66272 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66848 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/78639 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/808 ,  H01L29/812 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/01015

摘要： A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

摘要翻译： 系统包括半导体器件。 半导体器件包括第一单晶硅层，其包括第一晶体管，第一对准标记和覆盖在第一单晶硅层上的至少一个金属层，其中所述至少一个金属层比其它材料包括铜或铝; 以及覆盖所述至少一个金属层的第二单晶硅层。 第二单晶硅层包括以基本平行的带布置的多个第二晶体管。 多个频带中的每一个包括沿着重复图案的轴的第二晶体管的一部分。

公开(公告)号：US20110121366A1

公开(公告)日：2011-05-26

申请号：US13016313

申请日：2011-01-28

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J.L. de Jong ,  Deepak C. Sekar ,  Paul Lim

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J.L. de Jong ,  Deepak C. Sekar ,  Paul Lim

IPC分类号： H01L27/118

CPC分类号： H01L21/8221 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/823828 ,  H01L21/84 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/5252 ,  H01L24/05 ,  H01L24/13 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/10802 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1116 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/4236 ,  H01L29/66272 ,  H01L29/66621 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/66901 ,  H01L29/78 ,  H01L29/7841 ,  H01L29/7881 ,  H01L29/792 ,  H01L2221/68368 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/16145 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00015 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device includes a first single crystal silicon layer including first transistors, a first alignment mark, and at least one metal layer overlying the first single crystal silicon layer for interconnecting the first transistors; a second layer overlying the at least one metal layer, wherein the second layer includes a plurality of second transistors; and a connection path connecting the first transistors and the second transistors and including at least a first strip, a second strip, and a through via connecting the first strip and the second strip, wherein the second strip is substantially orthogonal to the first strip and wherein the through via is substantially away from both ends of the first strip and both ends of the second strip.

摘要翻译： 半导体器件包括第一单晶硅层，其包括第一晶体管，第一对准标记和覆盖在第一单晶硅层上的至少一个金属层，用于互连第一晶体管; 覆盖所述至少一个金属层的第二层，其中所述第二层包括多个第二晶体管; 以及连接路径，其连接第一晶体管和第二晶体管，并且至少包括连接第一条带和第二条带的第一条带，第二条带和通孔，其中第二条带基本上与第一条带正交， 通孔基本上远离第一条带的两端和第二条带的两端。

公开(公告)号：US08395191B2

公开(公告)日：2013-03-12

申请号：US12900379

申请日：2010-10-07

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/76 ,  H01L29/76 ,  H01L29/772 ,  H01L25/065

CPC分类号： H01L27/0688 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/268 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/544 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66272 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66848 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/78639 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/808 ,  H01L29/812 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/01015

摘要： A semiconductor device including a first single crystal layer with first transistors and a first alignment mark; at least one metal layer overlying the first single crystal layer, wherein the at least one metal layer includes copper or aluminum; and a second layer including activated dopant regions, the second layer overlying the at least one metal layer, wherein the second layer includes second transistors, wherein the second transistors are processed aligned to the first alignment mark with less than 100 nm alignment error, and the second transistors include mono-crystal, horizontally-oriented transistors.

摘要翻译： 一种半导体器件，包括具有第一晶体管的第一单晶层和第一对准标记; 覆盖所述第一单晶层的至少一个金属层，其中所述至少一个金属层包括铜或铝; 以及包括激活的掺杂剂区域的第二层，所述第二层覆盖所述至少一个金属层，其中所述第二层包括第二晶体管，其中所述第二晶体管被处理成与所述第一对准标记对齐，具有小于100nm的对准误差， 第二晶体管包括单晶，水平取向晶体管。

公开(公告)号：US08907442B2

公开(公告)日：2014-12-09

申请号：US13492382

申请日：2012-06-08

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

IPC分类号： H01L21/50 ,  H01L21/98 ,  H01L21/822 ,  G03F9/00 ,  H01L21/762 ,  H01L21/84 ,  H01L23/544 ,  H01L27/02 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L27/112 ,  H01L27/115 ,  H01L27/118 ,  H01L27/12 ,  H01L23/48

CPC分类号： H01L27/0688 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/268 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/544 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66272 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66848 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/78639 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/808 ,  H01L29/812 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/01015

摘要： A semiconductor device, including: a first layer including first transistors; an interconnection layer overlying the first transistors, the interconnection layer providing interconnection for the first transistors; a bonding layer overlying the interconnection layer; a second layer overlying the bonding layer; and a carrier substrate for the transferring of the second layer, where the second layer includes at least one through second layer via, where the at least one through second layer via has a diameter of less than 100 nm, where the second layer includes a plurality of second transistors, and where the second layer is transferred from a donor wafer.

摘要翻译： 一种半导体器件，包括：包括第一晶体管的第一层; 覆盖所述第一晶体管的互连层，所述互连层为所述第一晶体管提供互连; 覆盖所述互连层的接合层; 覆盖结合层的第二层; 以及用于转移第二层的载体衬底，其中第二层包括至少一个贯穿第二层通孔，其中至少一个贯穿第二层通孔具有小于100nm的直径，其中第二层包括多个 的第二晶体管，并且其中第二层从施主晶片转移。

公开(公告)号：US08237228B2

公开(公告)日：2012-08-07

申请号：US13246384

申请日：2011-09-27

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

IPC分类号： H01L27/092

CPC分类号： H01L27/0688 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/268 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/544 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66272 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66848 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/78639 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/808 ,  H01L29/812 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/01015

摘要： A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.

摘要翻译： 系统包括半导体器件。 该半导体器件包括包括第一晶体管的第一半导体层，其中第一晶体管通过包括铝或铜的至少一个金属层互连。 第二单结晶半导体层包括第二晶体管并且覆盖至少一个金属层，其中第二单结晶半导体层的厚度小于150nm，并且至少一个第二晶体管是N型晶体管 并且所述第二晶体管中的至少一个是P型晶体管。

公开(公告)号：US20120273955A1

公开(公告)日：2012-11-01

申请号：US13492382

申请日：2012-06-08

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

IPC分类号： H01L23/48 ,  H01L21/02

CPC分类号： H01L27/0688 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/268 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/544 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66272 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66848 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/78639 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/808 ,  H01L29/812 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/01015

摘要： A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.

公开(公告)号：US20120012895A1

公开(公告)日：2012-01-19

申请号：US13246384

申请日：2011-09-27

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar ,  Zeev Wurman

IPC分类号： H01L27/118

CPC分类号： H01L27/0688 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/268 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/544 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/66272 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66848 ,  H01L29/66901 ,  H01L29/732 ,  H01L29/78639 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/808 ,  H01L29/812 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/01015

摘要： A system includes a semiconductor device. The semiconductor device includes a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper. The second mono-crystallized semiconductor layer includes second transistors and is overlaying the at least one metal layer, wherein the second mono-crystallized semiconductor layer is less than 150 nm in thickness, and at least one of the second transistors is an N-type transistor and at least one of the second transistors is a P-type transistor.

摘要翻译： 系统包括半导体器件。 该半导体器件包括包括第一晶体管的第一半导体层，其中第一晶体管通过包括铝或铜的至少一个金属层互连。 第二单结晶半导体层包括第二晶体管并且覆盖至少一个金属层，其中第二单结晶半导体层的厚度小于150nm，并且至少一个第二晶体管是N型晶体管 并且所述第二晶体管中的至少一个是P型晶体管。

公开(公告)号：US08664042B2

公开(公告)日：2014-03-04

申请号：US13471009

申请日：2012-05-14

申请人： Zvi Or-Bach ,  Deepak C. Sekar ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong

发明人： Zvi Or-Bach ,  Deepak C. Sekar ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong

IPC分类号： H01L21/00

CPC分类号： H01L21/76254 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/36 ,  H01L23/481 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/105 ,  H01L27/11 ,  H01L27/1104 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01066 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H03K19/177 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method to construct configurable systems, the method including: providing a first configurable system including a first die and a second die, where the connections between the first die and the second die include through-silicon-via (“TSV”), where the first die is diced from a first wafer using first dice lines; providing a second configurable system including a third die and a fourth die, where the connections between the third die and the fourth die include through-silicon-via (“TSV”), where the third die is diced from a third wafer using third dice lines; and processing the first wafer and the third wafer utilizing at least 20 masks that are the same; where the first dice lines are substantially different than the third dice lines, and where the second die includes a configurable I/O to connect the first configurable system to external devices.

摘要翻译： 一种构建可配置系统的方法，所述方法包括：提供包括第一管芯和第二管芯的第一可配置系统，其中第一管芯和第二管芯之间的连接包括穿硅通孔（“TSV”），其中 使用第一骰子线从第一晶片切下第一芯片; 提供包括第三管芯和第四管芯的第二可配置系统，其中第三管芯和第四管芯之间的连接包括穿硅通孔（“TSV”），其中使用第三管芯从第三晶片切割第三管芯 线条 以及使用相同的至少20个掩模来处理所述第一晶片和所述第三晶片; 其中第一骰子线与第三骰子线基本上不同，并且其中第二骰子包括用于将第一可配置系统连接到外部装置的可配置I / O。

公开(公告)号：US07960242B2

公开(公告)日：2011-06-14

申请号：US12847911

申请日：2010-07-30

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  Jan Lodewijk de Jong ,  Deepak C. Sekar

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/76

CPC分类号： G11C17/14 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/36 ,  H01L23/481 ,  H01L23/5252 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/18 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/0694 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11803 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01066 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03K17/687 ,  H03K19/0948 ,  H03K19/17704 ,  H03K19/17756 ,  H03K19/17764 ,  H03K19/17796 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks; and performing a lithography using an alignment based on a misalignment between said first alignment marks and said second alignment marks.

摘要翻译： 一种制造半导体晶片的方法，所述方法包括：提供包括半导体衬底，金属层和第一对准标记的基底晶片; 在所述金属层的顶部上转移单晶层，其中所述单晶层包括第二对准标记; 以及使用基于所述第一对准标记和所述第二对准标记之间的未对准的对准来执行光刻。

公开(公告)号：US20110108888A1

公开(公告)日：2011-05-12

申请号：US12949617

申请日：2010-11-18

申请人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J. L. de Jong ,  Deepak C. Sekar

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Israel Beinglass ,  J. L. de Jong ,  Deepak C. Sekar

IPC分类号： H01L27/118

CPC分类号： H01L21/8221 ,  H01L21/76254 ,  H01L21/84 ,  H01L23/481 ,  H01L23/544 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/78 ,  H01L2223/54426 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2924/00012

摘要： A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.

摘要翻译： 半导体器件包括包括第一晶体管的第一单结晶层和形成第一晶体管之间的连接的至少一部分的第一金属层; 以及包括第二晶体管的第二层，所述第二晶体管包括单晶材料，所述第二层覆盖所述第一金属层，其中所述第一金属层包括铝或铜，并且其中所述第二层的厚度小于1微米，并且包括 逻辑单元。