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76 条记录 (耗时 0.021 秒)

    Method of fabricating Ge-Mn magnetic semiconductors with high cure temperature
    1.
    发明授权
    Method of fabricating Ge-Mn magnetic semiconductors with high cure temperature 失效
    制备具有高固化温度的Ge-Mn磁性半导体的方法

    公开(公告)号：US06946301B2

    公开(公告)日：2005-09-20

    申请号：US10687903

    申请日：2003-10-17

    申请人： Sang Ho Lim ,  Sang Hoon Song

    发明人： Sang Ho Lim ,  Sang Hoon Song

    IPC分类号： H01F1/40 ,  H01F10/18 ,  H01F10/193 ,  H01F41/20 ,  H01L21/00

    CPC分类号： H01F10/193 ,  H01F1/405 ,  H01F41/20

    摘要： The invention relates to a fabrication method of Ge—Mn magnetic semiconductor with a high Curie temperature. To date, most of researches in magnetic semiconductor are constrained to the magnetic semiconductors from group II-VI and group III-V.However, a new range of semiconductors from group IV has been recently added. Especially, Ge based semiconductors are attracting a significant attention. These magnetic semiconductors have very low Curie temperatures whose maximum is around 116 K. The low Curie temperature is a major stumbling block for commercial development. The exact reason for the low Curie temperature is not known, however, this is probably due to the low content of Mn.In order to resolve this problem, the present invention utilizes the thermal evaporation method to fabricate amorphous Ge—Mn alloys. As a result, a large amount of Mn is made solid soluble in Ge without any precipitation. Also, a relatively high Curie temperature of 250 K is obtained. This method is expected to be used as the essential element in the development of spin electronic devices

    摘要翻译： 本发明涉及具有高居里温度的Ge-Mn磁性半导体的制造方法。 迄今为止，大多数磁性半导体的研究受到II-VI族和III-V族的磁性半导体的限制。 然而，最近增加了第IV组的新一系列半导体。 特别是Ge基半导体受到重视。 这些磁性半导体具有非常低的居里温度，其最大值约为116K。居里温度低是商业开发的主要障碍。 低居里温度的确切原因尚不清楚，但这可能是由于Mn含量低。 为了解决这个问题，本发明利用热蒸发法制造非晶Ge-Mn合金。 结果，大量的Mn使得固体可溶于Ge而没有任何沉淀。 此外，获得250K的较高居里温度。 这种方法有望被用作自旋电子器件发展的基本要素

    Magnetoresistance effect element
    3.
    发明授权
    Magnetoresistance effect element 失效
    磁阻效应元件

    公开(公告)号：US06088195A

    公开(公告)日：2000-07-11

    申请号：US827122

    申请日：1997-03-27

    申请人： Yuzo Kamiguchi ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F10/18 ,  H01F10/187 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/3281 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3295

    摘要： A magnetoresistance effect element is provided with a laminated film which is composed of a first ferromagnetic conductive layer, a non-magnetic conductive layer superposed on the first ferromagnetic film, and a second ferromagnetic conductive layer superposed on the non-magnetic conductor layer, and which is provided with a pair of electrodes formed on the laminated film, wherein at least one of the first and second magnetic conductive layers comprises at least a first ferromagnetic layer and a second ferromagnetic film, for example, Co alloy films whose directions of axis of easy magnetization are different from each other. Furthermore, this element is a magnetoresistance effect element provided with a spin valve film having a non-magnetic layer disposed between a first magnetic layer composed of a laminated film of such a ferromagnetic film as a Co based magnetic alloy and a soft magnetic layer, and a second magnetic layer, wherein the soft magnetic layer is composed of a soft magnetic material laminated film of a soft magnetic material film of one kind or soft magnetic material films of two or more kinds, and values of their magnetization M.sub.s (T), film thickness d(nm), and anisotropic magnetic field H.sub.k (Oe) satisfy .SIGMA.(M.sub.s .times.d.times.H.sub.k)>30(Tnm Oe).

    摘要翻译： 磁阻效应元件设置有由第一铁磁性导电层，叠置在第一铁磁膜上的非磁性导电层和叠加在非磁性导体层上的第二铁磁性导电层构成的层叠膜， 设置有形成在层压膜上的一对电极，其中第一和第二导电层中的至少一个至少包括第一铁磁层和第二铁磁膜，例如Co合金膜的方向的轴线方向 磁化彼此不同。 此外，该元件是具有自旋阀膜的磁阻效应元件，该自旋阀膜具有设置在由作为Co基磁性合金的这种铁磁膜的层叠膜构成的第一磁性层和软磁性层之间的非磁性层，以及 第二磁性层，其中软磁性层由一种软磁性材料膜或两种或多种软磁性材料膜的软磁性材料层压膜及其磁化强度Ms（T），膜 厚度d（nm）和各向异性磁场Hk（Oe）满足SIGMA（MsxdxHk）> 30（Tnm Oe）。

    Magnetic recording media and methods for producing the same
    4.
    发明授权
    Magnetic recording media and methods for producing the same 失效
    磁记录介质及其制造方法

    公开(公告)号：US5824427A

    公开(公告)日：1998-10-20

    申请号：US673754

    申请日：1996-06-27

    申请人： Masato Kobayashi ,  Keiji Moroishi ,  Jun-ichi Horikawa ,  Osamu Nozawa

    发明人： Masato Kobayashi ,  Keiji Moroishi ,  Jun-ichi Horikawa ,  Osamu Nozawa

    IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B5/73 ,  G11B5/738 ,  G11B5/85 ,  G11B5/851 ,  H01F10/16 ,  H01F10/18 ,  H01F10/30 ,  C23C14/34 ,  G11B5/62

    CPC分类号： G11B5/7325 ,  G11B5/656

    摘要： A magnetic recording medium comprising a non-magnetic underlayer and a CoPt magnetic layer provided on a substrate in this order wherein the non-magnetic underlayer comprises one or more non-magnetic layers, one of the non-magnetic layers which is in contact with the CoPt magnetic layer consists mainly of Cr and Mo, and difference (d.sub.(002) -d.sub.(110)) obtained by subtracting a crystalline lattice spacing of bcc (110) faces in the non-magnetic layer consisting mainly of Cr and Mo from a crystalline lattice spacing of hcp (002) faces in the magnetic layer falls within a range of from 0.002 to 0.032 .ANG., which shows a high magnetic coercive force and square ratio and a low medium noise, and a method for producing the magnetic recording medium mentioned above wherein at least the non-magnetic layer consisting mainly of Cr and Mo and the CoPt magnetic layer are formed by a sputtering technique using a substrate heating temperature within a range of 250.degree. to 425.degree. C. and an Ar gas pressure within a range of 0.5 to 10 mTorr.

    摘要翻译： 一种包括非磁性底层和设置在基板上的CoPt磁性层的磁记录介质，其中非磁性底层包括一个或多个非磁性层，与非磁性层接触的非磁性层之一 CoPt磁性层主要由Cr和Mo组成，并且通过从主要由Cr和Mo组成的非磁性层中减去bcc（110）面的晶格间距而得到的差（d（002）-d（110）） 磁性层中的hcp（002）面的晶格间距在0.002〜0.032的范围内，具有高的矫顽力和平方比以及低的中等噪音，以及提供的磁记录介质的制造方法 其中至少主要由Cr和Mo组成的非磁性层和CoPt磁性层通过使用基板加热温度在250°至425℃范围内的溅射技术形成，并且Ar气体压制 在0.5至10 mTorr的范围内。

    Article comprising spinel-structure material on a substrate, and method of making the article
    5.
    发明授权
    Article comprising spinel-structure material on a substrate, and method of making the article 失效
    在基材上包含尖晶石结构材料的制品以及制造该制品的方法

    公开(公告)号：US5728421A

    公开(公告)日：1998-03-17

    申请号：US697402

    申请日：1996-08-23

    申请人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

    发明人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

    IPC分类号： C30B23/06 ,  H01F10/18 ,  H01F10/193 ,  H01F10/20 ,  H01F10/30 ,  H01F17/04 ,  H01F41/20 ,  H01L21/822 ,  H01L27/04 ,  H01L29/34 ,  B05D5/12 ,  C23C16/40

    CPC分类号： H01F41/20 ,  H01F10/20 ,  H01F10/265 ,  H01F10/30

    摘要： Ferrite films having excellent crystalline and magnetic properties are obtainable without high temperature (>500.degree. C.) processing if an appropriate template layer is deposited on a conventional substrate body (e.g., SrTiO.sub.3, cubic zirconia, Si), and the ferrite is deposited on the annealed template. The template is a spinel-structure metal oxide that has a lattice constant in the range 0.79-0.89 nm, preferably within about 0.015 nm of the lattice constant of the ferrite. Exemplarily, a NiFe.sub.2 O.sub.4 film was deposited at 400.degree. C. on a CoCr.sub.2 O.sub.4 template which had been deposited on (100) SrTiO.sub.3. The magnetization of the ferrite film at 4000 Oe was more than double the magnetization of a similarly deposited comparison ferrite film (NiFe.sub.2 O.sub.4 on SrTiO.sub.3), and was comparable to that of a NiFe.sub.2 O.sub.4 film on SrTiO.sub.3 that was annealed at 1000.degree. C. The ability to produce ferrite films of good magnetic properties without high temperature treatment inter alia makes possible fabrication of on-board magnetic components (e.g., inductor) on Si chips designed for operation at relatively high frequencies, e.g., >10 MHz, even at about 100 MHz.

    摘要翻译： 如果在常规基板主体（例如，SrTiO 3，立方氧化锆，Si）上沉积适当的模板层，则不需要高温（> 500℃）处理即可获得具有优异结晶和磁性能的铁氧体膜，铁素体沉积在 退火模板。 该模板是尖晶石结构金属氧化物，其晶格常数在铁素体的晶格常数的0.79-0.89nm范围内，优选在约0.015nm范围内。 示例性地，在400℃下沉积在（100）SrTiO 3上的CoCr 2 O 4模板上沉积NiFe 2 O 4膜。 铁氧体膜在4000Oe下的磁化强度是同样沉积的比较铁氧体膜（SrTiO3上的NiFe2O4）的磁化强度的两倍，并且与在1000℃退火的SrTiO 3上的NiFe 2 O 4膜的磁化相当。 生产具有良好磁性能的铁氧体膜，而不需要高温处理，特别是可以在设计用于在相对高的频率（例如> 10MHz）操作的Si芯片上制造车载磁性部件（例如，电感器），甚至在约100MHz。