-
公开(公告)号：US20240364078A1
公开(公告)日：2024-10-31
申请号：US18648297
申请日：2024-04-26
申请人： NICHIA CORPORATION
发明人： Hisashi OGAWA
CPC分类号： H01S5/12 , H01S5/22 , H01S2301/166
摘要： A transverse multimode semiconductor laser element includes: a semiconductor layered portion that includes an active layer and has a waveguide structure, wherein the semiconductor layered portion includes: a first region that includes a first diffraction grating and has a refractive index n1, and a second region that includes a first core region having a refractive index n21 and a plurality of first cladding regions having a refractive index n22 respectively provided on opposite sides of the first core region, and allows a laser beam to propagate in a plurality of transverse modes. The laser beam emitted from the second region propagates through the first region at a maximum diffusion angle θmax1 determined by the refractive index n1, the refractive index n21, and the refractive index n22.
-
公开(公告)号：US20240332898A1
公开(公告)日：2024-10-03
申请号：US18477446
申请日：2023-09-28
发明人： Atsushi NAKAMURA
CPC分类号： H01S5/124 , H01S5/028 , H01S5/04256 , H01S5/2205 , H01S5/227 , H01S5/34
摘要： To obtain both a high output power and a single mode oscillation of a semiconductor laser. The semiconductor laser includes first and second regions. In the first region, a diffraction pattern having a high reflectance with respect to a light beam having a Bragg wavelength is arranged. The second region includes: a π-shift region with a phase shifting by π from a phase of the first region, a secondary λ/4 shift portion, an in-phase region having the same phase as that of the first region, and the secondary λ/4 shift portion are arranged toward a second end portion in the stated order; and the π-shift region. The π-shift region is longer than the in-phase region, a length of the first region is larger than a difference between the π-shift region and the in-phase region, and facets on both sides each have a low-reflection facet coating film formed thereon.
-
公开(公告)号：US12099267B2
公开(公告)日：2024-09-24
申请号：US18317879
申请日：2023-05-15
发明人： Abu Thomas , Albert Benzoni , Jacob Levy , Thomas Pierre Schrans , Andrea Trita , Guomin Yu , Aaron John Zilkie
IPC分类号： G02F1/01 , G02B6/12 , G02F1/017 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , G02F1/015 , H01S5/227 , H01S5/343 , H01S5/50
CPC分类号： G02F1/01708 , G02B6/12004 , G02F1/025 , H01S5/0085 , H01S5/026 , H01S5/0265 , H01S5/101 , H01S5/12 , G02F1/0157 , G02F2202/102 , G02F2203/70 , H01S5/227 , H01S5/34306 , H01S5/50
摘要： A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm2.
-
公开(公告)号：US12095228B2
公开(公告)日：2024-09-17
申请号：US18337374
申请日：2023-06-19
CPC分类号： H01S5/125 , H01S5/02415 , H01S5/0262 , H01S5/0264 , H01S5/0612 , H01S5/0614 , H01S5/06256 , H01S5/1209 , H01S5/145
摘要： A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.
-
公开(公告)号：US12062886B2
公开(公告)日：2024-08-13
申请号：US17392899
申请日：2021-08-03
发明人： Yasutaka Higa , Yasumasa Kawakita , Kazuaki Kiyota
CPC分类号： H01S5/101 , G02B6/12007 , G02B6/29338 , G02B6/29344 , H01S5/026 , H01S5/12 , H01S5/1007
摘要： An optical functional device includes: first and second optical couplers each including a multi-mode interferometer waveguide portion having a first end portion and a second end portion, two units of first input/output ports and two units of second input/output ports; and first and second arc-shaped waveguides each optically connecting one of the first and second input/output ports of the first and second optical coupler and one of the first and second input/output ports of the second optical coupler, respectively. Further, the first optical coupler, the second optical coupler, the first arc-shaped waveguide, and the second arc-shaped waveguide constitute a ring resonator, and each of the multi-mode waveguide portions of the first optical coupler and the second optical coupler have a narrow portion, an average width of the narrow portion in a longitudinal direction being narrower than widths at the first end portion and the second end portion.
-
6.发明公开公开(公告)号：US20240258769A1
公开(公告)日：2024-08-01
申请号：US18162517
申请日：2023-01-31
CPC分类号： H01S5/141 , H01S3/10092 , H01S5/1007 , H01S5/12 , H01S5/323 , H01S5/50
摘要： A laser device comprises a gain chip that emits light, and a photonics chip optically coupled to the gain chip. The photonics chip comprises a waveguide platform including an input waveguide optically coupled to the gain chip. The input waveguide optical communicates with a cascaded arrangement of waveguide grating structures on the waveguide platform. The grating structures comprise a first grating structure that produces a single resonance frequency within a stopband, and a second grating structure in optical communication with the first grating structure. The second grating structure diffracts a narrowband resonance, overlapping with the stopband of the first grating structure, back toward the gain chip, while passing any light outside of the stopband of the first grating structure out of the waveguide platform. The grating structures cooperate to yield a single resonance frequency that feeds back into the gain chip to produce a self-injection lock for the laser device.
-
公开(公告)号：US12040596B2
公开(公告)日：2024-07-16
申请号：US16834808
申请日：2020-03-30
申请人： Lumentum Japan, Inc.
发明人： Atsushi Nakamura , Akira Nakanishi , Shunya Yamauchi , Hayato Takita , Yoshihiro Nakai , Hideaki Asakura
IPC分类号： H01S5/026 , H01S5/028 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/40 , H01S5/50 , G02B6/42 , H01S5/02345 , H01S5/0237
CPC分类号： H01S5/227 , H01S5/026 , H01S5/04256 , H01S5/12 , H01S5/4068 , H01S5/4075 , H01S5/4087 , H01S5/50 , G02B6/4281 , H01S5/02345 , H01S5/0237 , H01S5/0265 , H01S5/0287 , H01S5/0427 , H01S5/2224
摘要： An optical semiconductor device includes a semiconductor substrate; a plurality of mesa stripes, which are arranged side by side on the semiconductor substrate, and each of which includes an active layer and a diffraction grating, the diffraction grating extending up to a back end surface of each of the plurality of mesa stripes; a plurality of electrodes, each of which is electrically connected to an upper surface of a corresponding one of the plurality of mesa stripes, having a pad portion for wire bonding; a plurality of waveguides, each of which is optically connected to the active layer of a corresponding one of the plurality of mesa stripes; and a reflective film provided at back end surfaces of the plurality of mesa stripes, and wherein at least two mesa stripes, of the plurality of mesa stripes, are configured to be driven at the same time.
-
公开(公告)号：US12038511B2
公开(公告)日：2024-07-16
申请号：US17505640
申请日：2021-10-20
申请人： Intel Corporation
发明人： Naresh Satyan , George Rakuljic
IPC分类号： G01C3/08 , G01S7/481 , G01S7/4911 , G01S7/4914 , G01S7/4915 , G01S7/497 , G01S17/34 , G01S17/42 , G01S17/89 , G02F1/21 , H01S5/026 , H01S5/10 , H01S5/00 , H01S5/12 , H01S5/50
CPC分类号： G01S17/89 , G01S7/4812 , G01S7/4817 , G01S7/4911 , G01S7/4914 , G01S7/4915 , G01S7/497 , G01S17/34 , G01S17/42 , G02F1/21 , H01S5/0261 , H01S5/0265 , H01S5/1014 , G01S7/4818 , G02F1/212 , H01S5/0064 , H01S5/1212 , H01S5/5027
摘要： A light detection and ranging (LIDAR) system may include a laser source configured to emit one or more optical beams; a scanning optical system configured to scan the one or more optical beams over a scene and capture reflections of the one or more optical beams from the scene; a measurement system configured to divide the scene into a plurality of pixels, the measurement system comprising a detector configured to detect a return signal from multiple pixels of the plurality of pixels as the one or more optical beams are scanned across the scene, and a data processor configured to perform data processing from the return signal from the multiple pixels to determine a range and/or range rate for each pixel of the scene.
-
公开(公告)号：US20240210623A1
公开(公告)日：2024-06-27
申请号：US18556055
申请日：2021-05-18
CPC分类号： G02B6/125 , H01S5/0265 , H01S5/12 , H01S5/16
摘要： The optical circuit of the present disclosure provides a new optical transmitter configuration that achieves both high output and high quality transmission characteristics regardless of variations at cleavage positions. The optical circuit of the present disclosure may be an optical transmitter having an AXEL configuration in which an EADFB laser and a semiconductor optical amplifier (SOA) are integrated. In a window structure portion of a chip emission edge face of the AXEL, a partially thickened bulk semiconductor layer is formed by a structure including a simulated mesa configured to be separated from an optical axis parallel to an optical axis of an emission optical waveguide.
-
公开(公告)号：US11967800B2
公开(公告)日：2024-04-23
申请号：US18199960
申请日：2023-05-21
发明人： Chien Hung Pan , Cheng Zu Wu
CPC分类号： H01S5/11 , H01S5/1215 , H01S5/124 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:
∧
=
m
λ
2
⋆
n
eff
;
in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:
∧
=
o
λ
2
⋆
n
eff
.
Wherein ∧ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.
-
-
-
-
-
-
-
-
-
搜索结果
1651 条记录 (耗时 0.028 秒)
