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公开(公告)号：US12119798B2
公开(公告)日：2024-10-15
申请号：US18153741
申请日：2023-01-12
发明人： Patrick Turner , Mike Eddy , Andrew Kay , Ventsislav Yantchev , Charles Chung
CPC分类号： H03H3/02 , H03H3/04 , H03H9/02228 , H03H9/02992 , H03H9/105 , H03H9/1085 , H03H9/25 , H03H9/586 , H03H9/6406 , H03H2003/023
摘要： Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a surface of a base, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is connected to a respective pad of the second plurality of contact pads. A seal is formed between a perimeter of the piezoelectric plate and a perimeter of the base.
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公开(公告)号：US12088278B2
公开(公告)日：2024-09-10
申请号：US17219525
申请日：2021-03-31
发明人： Kwang Jae Shin , Jiansong Liu , Jong Duk Han , Jae Hyung Lee , Yiliu Wang , Yosuke Hamaoka , Alexandre Augusto Shirakawa , Benfeng Zhang
CPC分类号： H03H9/205 , H03H3/02 , H03H3/04 , H03H9/02015 , H03H9/02086 , H03H9/173 , H03H9/175 , H03H9/54 , H03H9/564 , H03H9/568 , H04B1/40 , H03H2003/0442
摘要： Aspects of this disclosure relate bulk acoustic wave resonators with a patterned mass loading layer at least contributing to a difference in mass loading between a main acoustically active region of the bulk acoustic wave resonator and a recessed frame region of the bulk acoustic wave resonator. Related methods of manufacturing can involve forming the patterned mass loading layer in the main acoustically active region and the recessed frame region in a common processing step such that the patterned mass loading layer has a higher density in the main acoustically active region than in the recessed frame region.
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公开(公告)号：US12088270B2
公开(公告)日：2024-09-10
申请号：US17067418
申请日：2020-10-09
发明人： Patrick Turner , Mike Eddy , Andrew Kay , Ventsislav Yantchev , Charles Chung
CPC分类号： H03H3/02 , H03H3/04 , H03H9/02228 , H03H9/02992 , H03H9/105 , H03H9/1085 , H03H9/25 , H03H9/586 , H03H9/6406 , H03H2003/023
摘要： Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a surface of a base, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is connected to a respective pad of the second plurality of contact pads. A seal is formed between a perimeter of the piezoelectric plate and a perimeter of the base.
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公开(公告)号：US12081187B2
公开(公告)日：2024-09-03
申请号：US17463322
申请日：2021-08-31
发明人： Viktor Plesski , Soumya Yandrapalli , Robert B. Hammond , Bryant Garcia , Patrick Turner , Jesson John , Ventsislav Yantchev
CPC分类号： H03H9/02228 , H03H3/04 , H03H9/02031 , H03H9/132 , H03H9/174 , H03H9/176 , H03H9/562 , H03H9/564 , H03H9/568 , H03H2003/023 , H03H2003/0442
摘要： Acoustic resonator devices and filters, and methods of making the same. An acoustic resonator includes a piezoelectric plate and an interdigital transducer (IDT) including interleaved fingers on the piezoelectric plate. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic resonator further includes a front-side dielectric layer on the piezoelectric plate between the fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the front-side dielectric layer.
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公开(公告)号：US11984872B2
公开(公告)日：2024-05-14
申请号：US17364778
申请日：2021-06-30
CPC分类号： H03H9/205 , H03H3/02 , H03H3/04 , H03H9/02015 , H03H9/02157 , H03H9/02228 , H03H9/568
摘要： Methods of fabricating acoustic filters are disclosed. The back of a piezoelectric plate is bonded to a surface of a substrate. The thickness of the piezoelectric plate is measured at a plurality of positions. Excess material is removed from the front surface of the piezoelectric plate in accordance with the thickness measurements to improve the thickness uniformity of the piezoelectric plate. After removing the excess material, a conductor pattern including a plurality of ladder filter circuits is formed on the front surface. Each ladder filter circuit includes at least one shunt resonator and at least one series resonator, each of which has an interdigital transducer (IDT). Cavities are formed in the substrate such that portions of the piezoelectric plate form a plurality of diaphragms spanning respective cavities. After the cavities are formed, interleaved fingers of each IDT are on a respective one of the plurality of diaphragms.
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公开(公告)号：US11984864B2
公开(公告)日：2024-05-14
申请号：US16970019
申请日：2018-12-27
发明人： Liang Li , Xin Lv , Dongsheng Liang
CPC分类号： H03H3/04 , H03H2003/028 , H03H2003/0435
摘要： The disclosure relates to the technical field of semiconductors, and discloses a method for manufacturing a resonator. The method includes: a substrate is pretreated to change a preset reaction rate of a preset region part of the substrate, so that the preset reaction rate of the preset region part is higher than that of a region outside the preset region part; a preset reaction is performed to the substrate to form a sacrificial material part including an upper half part above an upper surface of the substrate and a lower half part below a lower surface of the substrate; a multilayer structure is formed on the sacrificial material part, and includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top; and the sacrificial material part is removed.
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公开(公告)号：US20240088863A1
公开(公告)日：2024-03-14
申请号：US18515882
申请日：2023-11-21
发明人： Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC分类号： H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87
CPC分类号： H03H9/0222 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87 , H10N30/877 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号：US11888464B2
公开(公告)日：2024-01-30
申请号：US18081084
申请日：2022-12-14
IPC分类号： H03H9/21 , H03H3/02 , H03H9/05 , G01C19/5607 , H03H3/04 , H03H9/10 , G01C19/5621 , G01C19/5628 , G01C19/5663 , G01C19/5656
CPC分类号： H03H9/21 , G01C19/5607 , G01C19/5621 , G01C19/5628 , G01C19/5656 , G01C19/5663 , H03H3/02 , H03H3/04 , H03H9/0533 , H03H9/0547 , H03H9/0595 , H03H9/1014 , H03H2003/026 , H03H2003/0492
摘要： A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.
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公开(公告)号：US11876498B2
公开(公告)日：2024-01-16
申请号：US17351201
申请日：2021-06-17
CPC分类号： H03H9/568 , H03H3/02 , H03H3/04 , H03H9/02015 , H03H9/02157 , H03H9/02228 , H03H9/174 , H03H9/205 , H03H9/54 , H03H9/564 , H03H9/566
摘要： Filter devices and methods are disclosed. A filter device includes a substrate and a piezoelectric plate attached to the substrate, the piezoelectric plate forming diaphragms spanning respective cavities in the substrate. A first portion of the piezoelectric plate has a first thickness. A front surface of a second portion of the piezoelectric plate is recessed relative to a front surface of the first portion of the piezoelectric plate such that the second portion of the piezoelectric plate has a second thickness less than the first thickness. A conductor pattern is formed on the front surfaces of the first and second portions of the piezoelectric plate. The conductor pattern includes a first interdigital transducer (IDT) with interleaved fingers on a diaphragm having the first thickness, and a second IDT with interleaved fingers on a diaphragm having the second thickness.
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公开(公告)号：US20230396230A1
公开(公告)日：2023-12-07
申请号：US18454034
申请日：2023-08-22
发明人： Anindya PODDAR , Hau NGUYEN , Masamitsu MATSUURA
CPC分类号： H03H9/02133 , H03H9/02102 , H03H9/02448 , H03H9/0523 , H03H9/0533 , H03H9/0547 , H03H9/1057 , H03H9/17 , H03H9/2426 , H03H9/2457 , H03H3/0073 , H03H3/04 , H03H9/1021 , H03H2003/0407
摘要： In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.
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