CONTINUOUS OR DISCRETE METALLIZATION LAYER ON A CERAMIC SUBSTRATE
    3.
    发明申请
    CONTINUOUS OR DISCRETE METALLIZATION LAYER ON A CERAMIC SUBSTRATE 审中-公开
    陶瓷基板上连续或不连续的金属化层

    公开(公告)号:WO2009134448A1

    公开(公告)日:2009-11-05

    申请号:PCT/US2009/002724

    申请日:2009-04-30

    Inventor: SELEZNEV, Maxim

    Abstract: Surface metallization technology for ceramic substrates is disclosed herein. It makes use of a known phenomenon that many metal - metal oxide alloys in liquid state readily wet an oxide ceramic surface and strongly bond to it upon solidification. To achieve high adhesion strength of a metallization to ceramic, a discrete metallization layer consisting of metal droplets bonded to ceramic surface using metal - metal oxide bonding process is produced first. Next, a continuous metal layer is deposited on top of the discrete layer and bonded to it using a sintering process. As a result a strongly adhering, glass-free metallization layer directly bonded to ceramic surface is produced. In particular, the process can be successfully used to metallize aluminum nitride ceramic with high theπnal and electrical conductivity copper metal.

    Abstract translation: 本文公开了陶瓷基板的表面金属化技术。 它利用已知的现象,许多液态金属 - 金属氧化物合金容易地润湿氧化物陶瓷表面,并在凝固时与其牢固结合。 为了实现金属化对陶瓷的高粘合强度,首先制造了使用金属 - 金属氧化物粘合工艺由金属液滴结合到陶瓷表面上的离散金属化层。 接下来,连续金属层沉积在离散层的顶部上并且使用烧结工艺与其结合。 结果,产生直接粘合到陶瓷表面上的强烈粘附的无玻璃的金属化层。 特别地,该方法可以成功地用于金属化具有高导电性铜金属的氮化铝陶瓷。

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