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公开(公告)号：CN101208798A
公开(公告)日：2008-06-25
申请号：CN200680022867.0
申请日：2006-06-29
申请人： 英特尔公司
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/2885 , H01L23/481 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/11 , H01L2224/11424 , H01L2224/11462 , H01L2224/1147 , H01L2224/13009 , H01L2224/13216 , H01L2224/13224 , H01L2224/13239 , H01L2224/13244 , H01L2224/13247 , H01L2224/13284 , H01L2224/13384 , H01L2224/13386 , H01L2924/00014 , H01L2924/0002 , H01L2924/01322 , H01L2924/12033 , H01L2924/14 , H01L2924/0105 , H01L2224/05552 , H01L2924/00
摘要： 本发明公开了利用复合材料导电通孔通路的方法、设备和系统，复合材料具有形成连续相的基质和嵌入粒子，嵌入粒子具有与基质不同的材料特性，形成分散相，导致复合材料具有与基质不同的材料特性。
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公开(公告)号：CN105980087B
公开(公告)日：2018-05-25
申请号：CN201480074919.3
申请日：2014-02-04
申请人： 千住金属工业株式会社
CPC分类号： B23K35/0244 , B22F1/0003 , B22F1/0048 , B22F1/025 , B22F9/08 , B22F9/082 , B22F9/14 , B22F2009/0848 , B22F2301/10 , B22F2301/15 , B22F2998/10 , B22F2999/00 , B23K1/0016 , B23K1/008 , B23K3/0623 , B23K35/302 , B23K35/3033 , B23K2101/42 , C22C9/00 , C22C19/03 , C22F1/08 , C22F1/10 , H01L23/49816 , H01L23/556 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/111 , H01L2224/11334 , H01L2224/13014 , H01L2224/13016 , H01L2224/13105 , H01L2224/13109 , H01L2224/13117 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13138 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13163 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13172 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13183 , H01L2224/13184 , H01L2224/132 , H01L2224/13211 , H01L2224/13294 , H01L2224/133 , H01L2224/13305 , H01L2224/13309 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13338 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13363 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1337 , H01L2224/13371 , H01L2224/13372 , H01L2224/13373 , H01L2224/13376 , H01L2224/13378 , H01L2224/13379 , H01L2224/1338 , H01L2224/13381 , H01L2224/13383 , H01L2224/13384 , H01L2224/1339 , H01L2224/136 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2224/1369 , H01L2224/16145 , H01L2224/16225 , H01L2224/81011 , H01L2924/381 , H01L2924/3841 , H05K3/3436 , H05K3/3463 , H05K2203/041 , B22F2202/13 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01049 , H01L2924/01028 , H01L2924/01027 , H01L2924/01051 , H01L2924/01032 , H01L2924/01015 , H01L2924/01026 , H01L2924/01082 , H01L2924/01079 , H01L2924/01092 , H01L2924/0109 , H01L2924/01033 , H01L2924/00014 , H01L2924/01203 , H01L2924/01204 , H01L2924/0105 , H01L2924/01083 , H01L2924/0103 , H01L2924/01048 , H01L2924/01016 , H01L2924/01013 , H01L2924/01012 , H01L2924/01022 , H01L2924/01025 , H01L2924/0106 , H01L2924/01071 , H01L2924/01069 , H01L2924/01021 , H01L2924/01068 , H01L2924/01059 , H01L2924/01067 , H01L2924/01066 , H01L2924/01065 , H01L2924/01064 , H01L2924/01061 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/0107 , H01L2924/01058 , H01L2924/01038 , H01L2924/01056 , H01L2924/01052 , H01L2924/01076 , H01L2924/01072 , H01L2924/01043 , H01L2924/01004
摘要： 制造抑制了所释放的α射线量的金属球。包括如下工序：将纯金属在比作为去除对象的杂质的沸点高、比纯金属的熔点高、且比纯金属的沸点低的温度下进行加热而使纯金属熔融的工序；将熔融的纯金属造球成为球状的工序，其中，该纯金属与在纯金属所含的杂质中作为去除对象的杂质的对应于气压的沸点相比具有更高的沸点，U的含量为5ppb以下，Th的含量为5ppb以下，纯度为99.9％以上且99.995％以下，Pb或Bi中任一者的含量、或者Pb和Bi的总量为1ppm以上。
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公开(公告)号：CN102280422B
公开(公告)日：2015-09-23
申请号：CN201110224384.1
申请日：2006-06-29
申请人： 英特尔公司
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/2885 , H01L23/481 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/11 , H01L2224/11424 , H01L2224/11462 , H01L2224/1147 , H01L2224/13009 , H01L2224/13216 , H01L2224/13224 , H01L2224/13239 , H01L2224/13244 , H01L2224/13247 , H01L2224/13284 , H01L2224/13384 , H01L2224/13386 , H01L2924/00014 , H01L2924/0002 , H01L2924/01322 , H01L2924/12033 , H01L2924/14 , H01L2924/0105 , H01L2224/05552 , H01L2924/00
摘要： 本发明的名称是“包含金属和粒子填充的硅片直通通路的集成电路芯片”。本发明公开了利用复合材料导电通孔通路的方法、设备和系统，复合材料具有形成连续相的基质和嵌入粒子，嵌入粒子具有与基质不同的材料特性，形成分散相，导致复合材料具有与基质不同的材料特性。
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公开(公告)号：CN101208798B
公开(公告)日：2012-06-13
申请号：CN200680022867.0
申请日：2006-06-29
申请人： 英特尔公司
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/2885 , H01L23/481 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/11 , H01L2224/11424 , H01L2224/11462 , H01L2224/1147 , H01L2224/13009 , H01L2224/13216 , H01L2224/13224 , H01L2224/13239 , H01L2224/13244 , H01L2224/13247 , H01L2224/13284 , H01L2224/13384 , H01L2224/13386 , H01L2924/00014 , H01L2924/0002 , H01L2924/01322 , H01L2924/12033 , H01L2924/14 , H01L2924/0105 , H01L2224/05552 , H01L2924/00
摘要： 本发明公开了利用复合材料导电通孔通路的方法、设备和系统，复合材料具有形成连续相的基质和嵌入粒子，嵌入粒子具有与基质不同的材料特性，形成分散相，导致复合材料具有与基质不同的材料特性。
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公开(公告)号：CN105980087A
公开(公告)日：2016-09-28
申请号：CN201480074919.3
申请日：2014-02-04
申请人： 千住金属工业株式会社
CPC分类号： B23K35/0244 , B22F1/0003 , B22F1/0048 , B22F1/025 , B22F9/08 , B22F9/082 , B22F9/14 , B22F2009/0848 , B22F2301/10 , B22F2301/15 , B22F2998/10 , B22F2999/00 , B23K1/0016 , B23K1/008 , B23K3/0623 , B23K35/302 , B23K35/3033 , B23K2101/42 , C22C9/00 , C22C19/03 , C22F1/08 , C22F1/10 , H01L23/49816 , H01L23/556 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/111 , H01L2224/11334 , H01L2224/13014 , H01L2224/13016 , H01L2224/13105 , H01L2224/13109 , H01L2224/13117 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13138 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13163 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13172 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13183 , H01L2224/13184 , H01L2224/132 , H01L2224/13211 , H01L2224/13294 , H01L2224/133 , H01L2224/13305 , H01L2224/13309 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13338 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13363 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1337 , H01L2224/13371 , H01L2224/13372 , H01L2224/13373 , H01L2224/13376 , H01L2224/13378 , H01L2224/13379 , H01L2224/1338 , H01L2224/13381 , H01L2224/13383 , H01L2224/13384 , H01L2224/1339 , H01L2224/136 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2224/1369 , H01L2224/16145 , H01L2224/16225 , H01L2224/81011 , H01L2924/381 , H01L2924/3841 , H05K3/3436 , H05K3/3463 , H05K2203/041 , B22F2202/13 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01049 , H01L2924/01028 , H01L2924/01027 , H01L2924/01051 , H01L2924/01032 , H01L2924/01015 , H01L2924/01026 , H01L2924/01082 , H01L2924/01079 , H01L2924/01092 , H01L2924/0109 , H01L2924/01033 , H01L2924/00014 , H01L2924/01203 , H01L2924/01204 , H01L2924/0105 , H01L2924/01083 , H01L2924/0103 , H01L2924/01048 , H01L2924/01016 , H01L2924/01013 , H01L2924/01012 , H01L2924/01022 , H01L2924/01025 , H01L2924/0106 , H01L2924/01071 , H01L2924/01069 , H01L2924/01021 , H01L2924/01068 , H01L2924/01059 , H01L2924/01067 , H01L2924/01066 , H01L2924/01065 , H01L2924/01064 , H01L2924/01061 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/0107 , H01L2924/01058 , H01L2924/01038 , H01L2924/01056 , H01L2924/01052 , H01L2924/01076 , H01L2924/01072 , H01L2924/01043 , H01L2924/01004
摘要： 制造抑制了所释放的α射线量的金属球。包括如下工序：将纯金属在比作为去除对象的杂质的沸点高、比纯金属的熔点高、且比纯金属的沸点低的温度下进行加热而使纯金属熔融的工序；将熔融的纯金属造球成为球状的工序，其中，该纯金属与在纯金属所含的杂质中作为去除对象的杂质的对应于气压的沸点相比具有更高的沸点，U的含量为5ppb以下，Th的含量为5ppb以下，纯度为99.9％以上且99.995％以下，Pb或Bi中任一者的含量、或者Pb和Bi的总量为1ppm以上。
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公开(公告)号：CN102280422A
公开(公告)日：2011-12-14
申请号：CN201110224384.1
申请日：2006-06-29
申请人： 英特尔公司
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/2885 , H01L23/481 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/11 , H01L2224/11424 , H01L2224/11462 , H01L2224/1147 , H01L2224/13009 , H01L2224/13216 , H01L2224/13224 , H01L2224/13239 , H01L2224/13244 , H01L2224/13247 , H01L2224/13284 , H01L2224/13384 , H01L2224/13386 , H01L2924/00014 , H01L2924/0002 , H01L2924/01322 , H01L2924/12033 , H01L2924/14 , H01L2924/0105 , H01L2224/05552 , H01L2924/00
摘要： 本发明的名称是“包含金属和粒子填充的硅片直通通路的集成电路芯片”。本发明公开了利用复合材料导电通孔通路的方法、设备和系统，复合材料具有形成连续相的基质和嵌入粒子，嵌入粒子具有与基质不同的材料特性，形成分散相，导致复合材料具有与基质不同的材料特性。
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