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公开(公告)号:CN108028229A
公开(公告)日:2018-05-11
申请号:CN201680053250.9
申请日:2016-08-03
申请人: 美光科技公司
IPC分类号: H01L23/00 , H01L23/31 , H01L23/488 , H01L21/60
CPC分类号: H01L24/05 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/02126 , H01L2224/02135 , H01L2224/0219 , H01L2224/03013 , H01L2224/0346 , H01L2224/03472 , H01L2224/0361 , H01L2224/03906 , H01L2224/03912 , H01L2224/0401 , H01L2224/05009 , H01L2224/05082 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05547 , H01L2224/05553 , H01L2224/05555 , H01L2224/05565 , H01L2224/05568 , H01L2224/05644 , H01L2224/05655 , H01L2224/05684 , H01L2224/05686 , H01L2224/05687 , H01L2224/10145 , H01L2224/114 , H01L2224/11472 , H01L2224/13018 , H01L2224/13023 , H01L2224/13026 , H01L2224/13109 , H01L2224/13111 , H01L2224/94 , H01L2924/014 , H01L2924/07025 , H01L2924/3651 , H01L2224/11 , H01L2224/03 , H01L2924/00014 , H01L2924/01047 , H01L2924/053
摘要: 本发明涉及用于裸片间及/或封装间互连件的凸块下金属UBM结构环的制造及相关联的系统。一种半导体裸片包含:半导体材料,其具有固态组件;及互连件,其至少部分延伸穿过所述半导体材料。凸块下金属UBM结构形成于所述半导体材料上方且电耦合到对应互连件。套环包围所述UBM结构的侧表面的至少一部分,且焊接材料安置于所述UBM结构的顶面上方。
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公开(公告)号:CN107924878A
公开(公告)日:2018-04-17
申请号:CN201680047840.0
申请日:2016-07-05
申请人: 英帆萨斯公司
发明人: 塞普里昂·艾米卡·乌卓
IPC分类号: H01L23/00 , H01L23/12 , H01L21/324 , H01L23/485
CPC分类号: H01L24/17 , H01L21/4853 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/03009 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05568 , H01L2224/05647 , H01L2224/11442 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11614 , H01L2224/1162 , H01L2224/1182 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13309 , H01L2224/13311 , H01L2224/13313 , H01L2224/13339 , H01L2224/13344 , H01L2224/13355 , H01L2224/13409 , H01L2224/13561 , H01L2224/1357 , H01L2224/13809 , H01L2224/13811 , H01L2224/13813 , H01L2224/13839 , H01L2224/13844 , H01L2224/13855 , H01L2224/1601 , H01L2224/16058 , H01L2224/16059 , H01L2224/16104 , H01L2224/16113 , H01L2224/16145 , H01L2224/16227 , H01L2224/16238 , H01L2224/16501 , H01L2224/81193 , H01L2224/81204 , H01L2224/81801 , H01L2224/8184 , H01L2224/83815 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/014 , H01L2924/2064 , H01L2924/3511 , H01L2924/3841 , H01L2924/013
摘要: 一种制造一组件的方法可包含在一第一构件的一基板的一第一表面形成一第一导电的元件;藉由曝露到一无电的电镀浴以在所述导电的元件的一表面形成导电的纳米粒子;并列所述第一导电的元件的所述表面以及在一第二构件的一基板的一主要的表面的一第二导电的元件的一对应的表面;以及至少在所述并列的第一及第二导电的元件的介面升高一温度至一接合温度,所述导电的纳米粒子在所述接合温度下使得冶金的接合点形成在所述并列的第一及第二导电的元件之间。所述导电的纳米粒子可被设置在所述第一及第二导电的元件的表面之间。所述导电的纳米粒子可以具有小于100纳米的长度尺寸。
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公开(公告)号:CN106847762A
公开(公告)日:2017-06-13
申请号:CN201611025660.0
申请日:2016-11-16
申请人: 三星电子株式会社
IPC分类号: H01L23/31 , H01L23/488
CPC分类号: H01L23/5223 , H01L21/4846 , H01L23/49816 , H01L24/13 , H01L24/14 , H01L2224/0401 , H01L2224/05567 , H01L2224/13021 , H01L2224/13022 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/1312 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/1403 , H01L2224/14104 , H01L2224/14166 , H01L2224/16238 , H01L2924/014 , H01L2924/00014 , H01L23/31 , H01L23/488
摘要: 公开了一种半导体装置和一种半导体封装件。所述半导体装置包括:基底;去耦电容器,设置在基底上;第一连接焊盘,与去耦电容器竖直地叠置;钝化层,暴露第一连接焊盘的一部分;以及第一焊料凸块,设置在第一连接焊盘上并覆盖钝化层的顶表面的一部分。
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公开(公告)号:CN103915401B
公开(公告)日:2017-05-03
申请号:CN201310119638.2
申请日:2013-04-08
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/488 , H01L21/60
CPC分类号: H01L24/13 , H01L23/49811 , H01L24/05 , H01L24/11 , H01L24/14 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/0401 , H01L2224/05009 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05572 , H01L2224/1145 , H01L2224/1146 , H01L2224/13005 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13016 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/14155 , H01L2224/16225 , H01L2224/16237 , H01L2224/16238 , H01L2224/81024 , H01L2224/81191 , H01L2224/81203 , H01L2224/81385 , H01L2224/814 , H01L2224/81424 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81484 , H01L2224/81815 , H01L2924/00012 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/206 , H01L2924/00 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/01047
摘要: 本发明公开了封装结构中的细长凸块结构,其中封装结构包括附接至衬底的芯片。芯片包括凸块结构,其包括具有沿着导电柱的长轴测量的长度(L)和沿着导电柱的短轴测量的宽度(W)的导电柱。衬底包括焊盘区域和位于焊盘区域上方的掩模层,其中,掩模层具有露出部分焊盘区域的开口。芯片附接至衬底以在导电柱和焊盘区域之间形成互连件。开口具有沿着长轴测量的第一尺寸(d1)和沿着短轴测量的第二尺寸(d2)。在一个实施例中,L大于d1,而W小于d2。
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公开(公告)号:CN102468197B
公开(公告)日:2017-04-26
申请号:CN201110058357.1
申请日:2011-02-21
申请人: 新科金朋有限公司 , 星科金朋(上海)有限公司
发明人: R·D·彭德塞
IPC分类号: H01L21/60 , H01L21/50 , H01L23/485 , H01L23/488 , H01L25/00
CPC分类号: H01L24/81 , H01L21/563 , H01L21/565 , H01L23/3121 , H01L24/16 , H01L24/73 , H01L24/83 , H01L24/90 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1134 , H01L2224/13017 , H01L2224/13019 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/1601 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/16238 , H01L2224/27013 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73204 , H01L2224/73265 , H01L2224/81141 , H01L2224/81191 , H01L2224/81193 , H01L2224/81345 , H01L2224/81385 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H05K3/325 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要: 本发明涉及半导体器件以及形成倒装芯片互连结构的方法。一种半导体器件具有半导体管芯,该半导体管芯具有形成在半导体管芯的有源表面上的多个凸块或互连结构。凸块可以具有可熔部分和非可熔部分,例如导电柱和形成在导电柱上的凸块。具有互连部位的多个导电迹线形成在衬底上。凸块宽于互连部位。掩蔽层形成在衬底的远离互连部位的区域上。凸块在压力或回流温度下被结合到互连部位,使得凸块覆盖互连部位的顶面和侧面。密封剂沉积在管芯与衬底之间的凸块周围。掩蔽层可以形成坝状物以阻挡密封剂延伸到半导体管芯之外。凸起体可以形成在互连部位或凸块上。
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公开(公告)号:CN103026476B
公开(公告)日:2017-04-12
申请号:CN201180033313.1
申请日:2011-06-23
申请人: 安美特德国有限公司
IPC分类号: H01L21/48 , H01L23/498
CPC分类号: B23K31/02 , H01L21/4853 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L2224/03464 , H01L2224/0361 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/11462 , H01L2224/1147 , H01L2224/11474 , H01L2224/1148 , H01L2224/11502 , H01L2224/11849 , H01L2224/11901 , H01L2224/11912 , H01L2224/13006 , H01L2224/13018 , H01L2224/13022 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01061 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15787 , H01L2924/351 , H01L2924/00 , H01L2224/05552
摘要: 描述了一种在衬底上形成焊料合金沉积的方法,其包括下述步骤:i) 提供包括表面承载电路的衬底,所述表面承载电路包括至少一个内层接触焊盘,ii) 形成焊料掩模层,所述焊料掩模层被置于所述衬底表面上并且被图案化以暴露所述至少一个接触区域,iii) 使包括所述焊料掩模层和所述至少一个接触区域的整个衬底区域与适于在所述衬底表面上提供金属种层的溶液相接触,iv) 在所述金属种层上形成结构化的抗蚀剂层,v) 将含有锡的第一焊料材料层电镀到所述导电层上,vi)将第二焊料材料层电镀到所述第一焊料材料层上,vii) 去除所述结构化的抗蚀剂层,并且蚀刻掉一定量的金属种层,其足以将所述金属种层从所述焊料掩模层区域去除,以及对所述衬底进行回流,并且在这样做时根据所述金属种层、第一焊料材料层和第二焊料材料层形成焊料合金沉积。
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公开(公告)号:CN106548997A
公开(公告)日:2017-03-29
申请号:CN201610805906.X
申请日:2016-09-06
申请人: 三星电子株式会社
IPC分类号: H01L23/488 , H01L21/60
CPC分类号: H01L24/13 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/02205 , H01L2224/02215 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05008 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05569 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/10145 , H01L2224/11462 , H01L2224/1147 , H01L2224/11614 , H01L2224/1162 , H01L2224/11849 , H01L2224/13006 , H01L2224/13014 , H01L2224/13017 , H01L2224/13018 , H01L2224/13022 , H01L2224/13026 , H01L2224/13076 , H01L2224/13083 , H01L2224/13084 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/13564 , H01L2224/16227 , H01L2224/16237 , H01L2224/73204 , H01L2224/81011 , H01L2224/81191 , H01L2224/81815 , H01L2924/05042 , H01L2924/05442 , H01L2924/07025 , H01L2924/00014 , H01L2924/014 , H01L2924/01082 , H01L2924/01083 , H01L2924/0103 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/11 , H01L2224/13016
摘要: 公开了一种电子器件和一种半导体器件。所述电子器件包括其上具有电气导电的接触焊盘的基底和在接触焊盘上的电气导电的连接端子。连接端子包括导电柱结构和在柱结构上延伸并且与柱结构的侧壁的突出部分接触的焊料层。柱结构可包括下柱层、在下柱层上的扩散阻挡层和在扩散阻挡层上的上柱层。在发明的一些附加实施例中,柱结构的侧壁的突出部分包括扩散阻挡层的上表面的最外侧部分。这可通过使扩散阻挡层的宽度当在横向剖面上观察时大于上柱层的宽度来获得。
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公开(公告)号:CN105980087A
公开(公告)日:2016-09-28
申请号:CN201480074919.3
申请日:2014-02-04
申请人: 千住金属工业株式会社
CPC分类号: B23K35/0244 , B22F1/0003 , B22F1/0048 , B22F1/025 , B22F9/08 , B22F9/082 , B22F9/14 , B22F2009/0848 , B22F2301/10 , B22F2301/15 , B22F2998/10 , B22F2999/00 , B23K1/0016 , B23K1/008 , B23K3/0623 , B23K35/302 , B23K35/3033 , B23K2101/42 , C22C9/00 , C22C19/03 , C22F1/08 , C22F1/10 , H01L23/49816 , H01L23/556 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/111 , H01L2224/11334 , H01L2224/13014 , H01L2224/13016 , H01L2224/13105 , H01L2224/13109 , H01L2224/13117 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13138 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13163 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13172 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13183 , H01L2224/13184 , H01L2224/132 , H01L2224/13211 , H01L2224/13294 , H01L2224/133 , H01L2224/13305 , H01L2224/13309 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13338 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13363 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1337 , H01L2224/13371 , H01L2224/13372 , H01L2224/13373 , H01L2224/13376 , H01L2224/13378 , H01L2224/13379 , H01L2224/1338 , H01L2224/13381 , H01L2224/13383 , H01L2224/13384 , H01L2224/1339 , H01L2224/136 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2224/1369 , H01L2224/16145 , H01L2224/16225 , H01L2224/81011 , H01L2924/381 , H01L2924/3841 , H05K3/3436 , H05K3/3463 , H05K2203/041 , B22F2202/13 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01049 , H01L2924/01028 , H01L2924/01027 , H01L2924/01051 , H01L2924/01032 , H01L2924/01015 , H01L2924/01026 , H01L2924/01082 , H01L2924/01079 , H01L2924/01092 , H01L2924/0109 , H01L2924/01033 , H01L2924/00014 , H01L2924/01203 , H01L2924/01204 , H01L2924/0105 , H01L2924/01083 , H01L2924/0103 , H01L2924/01048 , H01L2924/01016 , H01L2924/01013 , H01L2924/01012 , H01L2924/01022 , H01L2924/01025 , H01L2924/0106 , H01L2924/01071 , H01L2924/01069 , H01L2924/01021 , H01L2924/01068 , H01L2924/01059 , H01L2924/01067 , H01L2924/01066 , H01L2924/01065 , H01L2924/01064 , H01L2924/01061 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/0107 , H01L2924/01058 , H01L2924/01038 , H01L2924/01056 , H01L2924/01052 , H01L2924/01076 , H01L2924/01072 , H01L2924/01043 , H01L2924/01004
摘要: 制造抑制了所释放的α射线量的金属球。包括如下工序:将纯金属在比作为去除对象的杂质的沸点高、比纯金属的熔点高、且比纯金属的沸点低的温度下进行加热而使纯金属熔融的工序;将熔融的纯金属造球成为球状的工序,其中,该纯金属与在纯金属所含的杂质中作为去除对象的杂质的对应于气压的沸点相比具有更高的沸点,U的含量为5ppb以下,Th的含量为5ppb以下,纯度为99.9%以上且99.995%以下,Pb或Bi中任一者的含量、或者Pb和Bi的总量为1ppm以上。
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公开(公告)号:CN105810603A
公开(公告)日:2016-07-27
申请号:CN201610031246.4
申请日:2016-01-18
申请人: 国际商业机器公司
IPC分类号: H01L21/603
CPC分类号: H01L25/0657 , H01L21/565 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/50 , H01L2224/0381 , H01L2224/0401 , H01L2224/05147 , H01L2224/05647 , H01L2224/05655 , H01L2224/0612 , H01L2224/065 , H01L2224/11003 , H01L2224/11334 , H01L2224/1141 , H01L2224/1144 , H01L2224/11849 , H01L2224/13109 , H01L2224/13111 , H01L2224/14104 , H01L2224/16012 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16503 , H01L2224/17181 , H01L2224/73204 , H01L2224/81022 , H01L2224/81065 , H01L2224/8109 , H01L2224/811 , H01L2224/8112 , H01L2224/81201 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/8181 , H01L2224/81815 , H01L2224/81986 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/15311 , H01L2924/3511 , H01L2924/381 , H01L2924/3841 , H01L2924/00012 , H01L2924/00014 , H01L2224/81203 , H01L2924/01047 , H01L2924/01029 , H01L24/19
摘要: 一种形成用于包括多个硅层的芯片堆叠的体积减少的互连的方法,该方法包括:形成多个导电结构,导电结构的至少一个子集中的每个导电结构具有针对导电结构被转移到其上的对应凸块下冶金焊盘的导电材料的体积,该体积被配置为使得导电结构的未回流直径与对应焊盘的直径的比率为约三分之一比一或更小;将导电结构转移到硅层;在基本上竖直的维度上堆叠硅层,使得给定硅层上的导电结构中的每个导电结构与邻近硅层的下侧上的对应电接触位置对准;以及加热互连,以便以冶金方式键合邻近硅层的多个电接触位置。
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公开(公告)号:CN103137585B
公开(公告)日:2016-07-06
申请号:CN201210190255.X
申请日:2012-06-08
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/485 , H01L21/60
CPC分类号: H01L23/293 , H01L21/568 , H01L23/3157 , H01L24/02 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/06 , H01L24/10 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/14 , H01L2224/0346 , H01L2224/0347 , H01L2224/0401 , H01L2224/05541 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/1146 , H01L2224/1147 , H01L2224/1181 , H01L2224/1191 , H01L2224/13005 , H01L2224/13007 , H01L2224/13022 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16237 , H01L2224/73104 , H01L2224/81193 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2924/00014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/206 , H01L2924/207 , H01L2924/01082 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要: 本发明提供了用于形成细间距铜凸块结构的机构。所描述的形成铜柱结构的机构使在平坦导电表面上形成铜柱结构成为可能。另外,铜柱结构由杨氏模量比聚酰亚胺更高(或更硬的材料)的模塑层支持。所形成的铜柱结构大大减小了钝化层碎裂和围绕铜柱结构的电介质界面处分层的风险。
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