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公开(公告)号：CN107924878A
公开(公告)日：2018-04-17
申请号：CN201680047840.0
申请日：2016-07-05
申请人： 英帆萨斯公司
发明人： 塞普里昂·艾米卡·乌卓
IPC分类号： H01L23/00 , H01L23/12 , H01L21/324 , H01L23/485
CPC分类号： H01L24/17 , H01L21/4853 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/03009 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05568 , H01L2224/05647 , H01L2224/11442 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11614 , H01L2224/1162 , H01L2224/1182 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13309 , H01L2224/13311 , H01L2224/13313 , H01L2224/13339 , H01L2224/13344 , H01L2224/13355 , H01L2224/13409 , H01L2224/13561 , H01L2224/1357 , H01L2224/13809 , H01L2224/13811 , H01L2224/13813 , H01L2224/13839 , H01L2224/13844 , H01L2224/13855 , H01L2224/1601 , H01L2224/16058 , H01L2224/16059 , H01L2224/16104 , H01L2224/16113 , H01L2224/16145 , H01L2224/16227 , H01L2224/16238 , H01L2224/16501 , H01L2224/81193 , H01L2224/81204 , H01L2224/81801 , H01L2224/8184 , H01L2224/83815 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/014 , H01L2924/2064 , H01L2924/3511 , H01L2924/3841 , H01L2924/013
摘要： 一种制造一组件的方法可包含在一第一构件的一基板的一第一表面形成一第一导电的元件；藉由曝露到一无电的电镀浴以在所述导电的元件的一表面形成导电的纳米粒子；并列所述第一导电的元件的所述表面以及在一第二构件的一基板的一主要的表面的一第二导电的元件的一对应的表面；以及至少在所述并列的第一及第二导电的元件的介面升高一温度至一接合温度，所述导电的纳米粒子在所述接合温度下使得冶金的接合点形成在所述并列的第一及第二导电的元件之间。所述导电的纳米粒子可被设置在所述第一及第二导电的元件的表面之间。所述导电的纳米粒子可以具有小于100纳米的长度尺寸。
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公开(公告)号：CN104134634B
公开(公告)日：2017-08-11
申请号：CN201410185095.9
申请日：2014-05-04
申请人： 英飞凌科技股份有限公司
IPC分类号： H01L23/14 , H01L23/50 , H01L25/16 , H01L21/58 , G06K19/077
CPC分类号： H05K1/028 , G06K19/07728 , G06K19/07749 , H01L23/4985 , H01L24/16 , H01L24/32 , H01L24/95 , H01L2224/131 , H01L2224/13147 , H01L2224/13309 , H01L2224/13311 , H01L2224/13316 , H01L2224/13318 , H01L2224/13324 , H01L2224/13339 , H01L2224/13344 , H01L2224/13393 , H01L2224/16238 , H01L2224/17106 , H01L2224/291 , H01L2224/2919 , H01L2224/32227 , H01L2224/73204 , H01L2224/81191 , H01L2224/81424 , H01L2224/81447 , H01L2924/12044 , H05K1/02 , H05K2201/2009 , H01L2924/00014 , H01L2924/01006 , H01L2924/00 , H01L2924/014
摘要： 本发明涉及芯片装置、芯片卡装置和用于制造芯片装置的方法。依据不同的实施形式提供了一种芯片装置(100)，其具有：弹性的载体；用于增强该载体的一个区域的第一支持结构和第二支持结构，其中，第一支持结构被设置在载体的第一侧上并且第二支持结构与所述第一支持结构相反地被设置在载体的第二侧上；和设置在载体的所述第一侧上的芯片(104)，其中，所述芯片(104)借助于所述支持结构(106、108)并且借助于所述载体(102)来承载和支持，其中，所述第二支持结构(108)沿着与所述载体(102)的表面平行的方向(101)比芯片(104)更远地延伸和/或至少沿着与所述载体(102)的表面平行的方向(101)比所述第一支持结构(106)更远地延伸。
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公开(公告)号：CN104205328B
公开(公告)日：2017-05-10
申请号：CN201380012403.1
申请日：2013-02-13
申请人： 富士电机株式会社
发明人： 梨子田典弘
CPC分类号： H01L24/09 , H01L23/3735 , H01L23/4334 , H01L23/49811 , H01L23/49833 , H01L24/01 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/80 , H01L24/81 , H01L24/92 , H01L25/072 , H01L2224/0401 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11848 , H01L2224/13017 , H01L2224/13019 , H01L2224/13147 , H01L2224/13294 , H01L2224/13339 , H01L2224/13347 , H01L2224/13369 , H01L2224/13639 , H01L2224/13644 , H01L2224/13655 , H01L2224/16058 , H01L2224/16225 , H01L2224/16227 , H01L2224/1623 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/291 , H01L2224/32225 , H01L2224/73253 , H01L2224/81048 , H01L2224/81065 , H01L2224/81091 , H01L2224/81095 , H01L2224/81192 , H01L2224/81193 , H01L2224/81203 , H01L2224/81359 , H01L2224/81385 , H01L2224/8184 , H01L2224/92242 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/10272 , H01L2924/1203 , H01L2924/12032 , H01L2924/1304 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/35 , H01L2924/351 , H05K3/32 , H05K3/3436 , H05K3/4015 , H01L2924/014 , H01L2924/00014 , H01L2224/81 , H01L2924/00 , H01L2224/01 , H01L2224/80 , H01L2924/00012
摘要： 在使用金属纳米粒子对导电柱(8)和被接合构件即半导体芯片(6)或带导电图案的绝缘基板(4)进行金属粒子接合的情况下，通过将导电柱(8)的前端的底面(12)形成为凹状，从而能获得牢固的接合层。
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公开(公告)号：CN105980087A
公开(公告)日：2016-09-28
申请号：CN201480074919.3
申请日：2014-02-04
申请人： 千住金属工业株式会社
CPC分类号： B23K35/0244 , B22F1/0003 , B22F1/0048 , B22F1/025 , B22F9/08 , B22F9/082 , B22F9/14 , B22F2009/0848 , B22F2301/10 , B22F2301/15 , B22F2998/10 , B22F2999/00 , B23K1/0016 , B23K1/008 , B23K3/0623 , B23K35/302 , B23K35/3033 , B23K2101/42 , C22C9/00 , C22C19/03 , C22F1/08 , C22F1/10 , H01L23/49816 , H01L23/556 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/111 , H01L2224/11334 , H01L2224/13014 , H01L2224/13016 , H01L2224/13105 , H01L2224/13109 , H01L2224/13117 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13138 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13163 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13172 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13183 , H01L2224/13184 , H01L2224/132 , H01L2224/13211 , H01L2224/13294 , H01L2224/133 , H01L2224/13305 , H01L2224/13309 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13338 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13363 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1337 , H01L2224/13371 , H01L2224/13372 , H01L2224/13373 , H01L2224/13376 , H01L2224/13378 , H01L2224/13379 , H01L2224/1338 , H01L2224/13381 , H01L2224/13383 , H01L2224/13384 , H01L2224/1339 , H01L2224/136 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2224/1369 , H01L2224/16145 , H01L2224/16225 , H01L2224/81011 , H01L2924/381 , H01L2924/3841 , H05K3/3436 , H05K3/3463 , H05K2203/041 , B22F2202/13 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01049 , H01L2924/01028 , H01L2924/01027 , H01L2924/01051 , H01L2924/01032 , H01L2924/01015 , H01L2924/01026 , H01L2924/01082 , H01L2924/01079 , H01L2924/01092 , H01L2924/0109 , H01L2924/01033 , H01L2924/00014 , H01L2924/01203 , H01L2924/01204 , H01L2924/0105 , H01L2924/01083 , H01L2924/0103 , H01L2924/01048 , H01L2924/01016 , H01L2924/01013 , H01L2924/01012 , H01L2924/01022 , H01L2924/01025 , H01L2924/0106 , H01L2924/01071 , H01L2924/01069 , H01L2924/01021 , H01L2924/01068 , H01L2924/01059 , H01L2924/01067 , H01L2924/01066 , H01L2924/01065 , H01L2924/01064 , H01L2924/01061 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/0107 , H01L2924/01058 , H01L2924/01038 , H01L2924/01056 , H01L2924/01052 , H01L2924/01076 , H01L2924/01072 , H01L2924/01043 , H01L2924/01004
摘要： 制造抑制了所释放的α射线量的金属球。包括如下工序：将纯金属在比作为去除对象的杂质的沸点高、比纯金属的熔点高、且比纯金属的沸点低的温度下进行加热而使纯金属熔融的工序；将熔融的纯金属造球成为球状的工序，其中，该纯金属与在纯金属所含的杂质中作为去除对象的杂质的对应于气压的沸点相比具有更高的沸点，U的含量为5ppb以下，Th的含量为5ppb以下，纯度为99.9％以上且99.995％以下，Pb或Bi中任一者的含量、或者Pb和Bi的总量为1ppm以上。
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公开(公告)号：CN103930990A
公开(公告)日：2014-07-16
申请号：CN201280055469.4
申请日：2012-12-14
申请人： 富士电机株式会社
CPC分类号： H01L23/5226 , H01L21/486 , H01L21/76877 , H01L23/24 , H01L23/3735 , H01L23/4334 , H01L23/49811 , H01L23/49833 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/072 , H01L2224/13011 , H01L2224/13015 , H01L2224/13076 , H01L2224/13082 , H01L2224/131 , H01L2224/13339 , H01L2224/13347 , H01L2224/16235 , H01L2224/291 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/73253 , H01L2224/73265 , H01L2224/81139 , H01L2224/81193 , H01L2224/8121 , H01L2224/81815 , H01L2224/8184 , H01L2224/81898 , H01L2224/83192 , H01L2224/8384 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/15787 , H01L2924/014 , H01L2924/00014 , H01L2924/00
摘要： 本发明提供一种半导体装置，能以较好的生产性来制造使植入基板与半导体搭载基板的半导体元件经由植入引脚相接合并电连接的半导体装置。在该半导体装置中，经由压入植入引脚(20)的另一端的筒状端子(10)，植入引脚(20)与半导体搭载基板的半导体元件(8)及/或电路图案(5)相接合。并且，植入引脚(20)的压入筒状端子(10)的压入深度L2可以调整。由此，使得处于被压入筒状端子(10)的状态的植入引脚(20)与筒状端子(10)的总长度与半导体搭载基板上的半导体元件(8)及/或电路图案(5)和植入基板(30)之间的距离相匹配。
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公开(公告)号：CN106457383B
公开(公告)日：2019-06-28
申请号：CN201580026546.7
申请日：2015-04-10
申请人： 阿尔法装配解决方案公司
CPC分类号： H01L24/29 , B22F1/0003 , B22F1/0014 , B22F1/0074 , B22F1/025 , B22F7/04 , B22F2007/047 , B22F2301/255 , B22F2302/45 , B23K1/0016 , B23K35/025 , B23K35/3006 , B23K35/3601 , B23K35/3613 , B23K35/3618 , B23K35/365 , B23K2101/40 , B23K2103/56 , H01B1/22 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L51/5246 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05644 , H01L2224/11003 , H01L2224/1132 , H01L2224/11334 , H01L2224/131 , H01L2224/13339 , H01L2224/13347 , H01L2224/13355 , H01L2224/13387 , H01L2224/1339 , H01L2224/13439 , H01L2224/1349 , H01L2224/13499 , H01L2224/16227 , H01L2224/27003 , H01L2224/271 , H01L2224/27332 , H01L2224/27436 , H01L2224/27505 , H01L2224/2929 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/29387 , H01L2224/2939 , H01L2224/29439 , H01L2224/2949 , H01L2224/29499 , H01L2224/32145 , H01L2224/32146 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/81075 , H01L2224/81192 , H01L2224/81203 , H01L2224/8121 , H01L2224/8184 , H01L2224/81948 , H01L2224/83075 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8321 , H01L2224/83439 , H01L2224/83447 , H01L2224/8384 , H01L2224/83948 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12044 , H01L2924/1461 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/206 , H01L2924/2064 , H05K3/321 , H01L2924/00012 , H01L2224/83 , H01L2924/0105 , H01L2924/01046 , H01L2924/01047 , H01L2924/01029 , H01L2924/01028 , H01L2924/0103 , H01L2924/0493 , H01L2924/01004 , H01L2224/27 , H01L2924/01074 , H01L2224/81 , H01L2224/11436 , H01L2224/11 , H01L2224/45099 , H01L2924/00
摘要： 一种烧结粉末，其包含：具有从100nm至50μm的平均最长尺寸的第一类型的金属颗粒。
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公开(公告)号：CN105980087B
公开(公告)日：2018-05-25
申请号：CN201480074919.3
申请日：2014-02-04
申请人： 千住金属工业株式会社
CPC分类号： B23K35/0244 , B22F1/0003 , B22F1/0048 , B22F1/025 , B22F9/08 , B22F9/082 , B22F9/14 , B22F2009/0848 , B22F2301/10 , B22F2301/15 , B22F2998/10 , B22F2999/00 , B23K1/0016 , B23K1/008 , B23K3/0623 , B23K35/302 , B23K35/3033 , B23K2101/42 , C22C9/00 , C22C19/03 , C22F1/08 , C22F1/10 , H01L23/49816 , H01L23/556 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/111 , H01L2224/11334 , H01L2224/13014 , H01L2224/13016 , H01L2224/13105 , H01L2224/13109 , H01L2224/13117 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13138 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13149 , H01L2224/13155 , H01L2224/13157 , H01L2224/1316 , H01L2224/13163 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13172 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13179 , H01L2224/1318 , H01L2224/13181 , H01L2224/13183 , H01L2224/13184 , H01L2224/132 , H01L2224/13211 , H01L2224/13294 , H01L2224/133 , H01L2224/13305 , H01L2224/13309 , H01L2224/13317 , H01L2224/13318 , H01L2224/1332 , H01L2224/13323 , H01L2224/13324 , H01L2224/13338 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13349 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13363 , H01L2224/13364 , H01L2224/13366 , H01L2224/13369 , H01L2224/1337 , H01L2224/13371 , H01L2224/13372 , H01L2224/13373 , H01L2224/13376 , H01L2224/13378 , H01L2224/13379 , H01L2224/1338 , H01L2224/13381 , H01L2224/13383 , H01L2224/13384 , H01L2224/1339 , H01L2224/136 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2224/1369 , H01L2224/16145 , H01L2224/16225 , H01L2224/81011 , H01L2924/381 , H01L2924/3841 , H05K3/3436 , H05K3/3463 , H05K2203/041 , B22F2202/13 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01049 , H01L2924/01028 , H01L2924/01027 , H01L2924/01051 , H01L2924/01032 , H01L2924/01015 , H01L2924/01026 , H01L2924/01082 , H01L2924/01079 , H01L2924/01092 , H01L2924/0109 , H01L2924/01033 , H01L2924/00014 , H01L2924/01203 , H01L2924/01204 , H01L2924/0105 , H01L2924/01083 , H01L2924/0103 , H01L2924/01048 , H01L2924/01016 , H01L2924/01013 , H01L2924/01012 , H01L2924/01022 , H01L2924/01025 , H01L2924/0106 , H01L2924/01071 , H01L2924/01069 , H01L2924/01021 , H01L2924/01068 , H01L2924/01059 , H01L2924/01067 , H01L2924/01066 , H01L2924/01065 , H01L2924/01064 , H01L2924/01061 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/0107 , H01L2924/01058 , H01L2924/01038 , H01L2924/01056 , H01L2924/01052 , H01L2924/01076 , H01L2924/01072 , H01L2924/01043 , H01L2924/01004
摘要： 制造抑制了所释放的α射线量的金属球。包括如下工序：将纯金属在比作为去除对象的杂质的沸点高、比纯金属的熔点高、且比纯金属的沸点低的温度下进行加热而使纯金属熔融的工序；将熔融的纯金属造球成为球状的工序，其中，该纯金属与在纯金属所含的杂质中作为去除对象的杂质的对应于气压的沸点相比具有更高的沸点，U的含量为5ppb以下，Th的含量为5ppb以下，纯度为99.9％以上且99.995％以下，Pb或Bi中任一者的含量、或者Pb和Bi的总量为1ppm以上。
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公开(公告)号：CN104952842A
公开(公告)日：2015-09-30
申请号：CN201510145577.6
申请日：2015-03-30
申请人： 恩智浦有限公司
发明人： 莱奥那德思·安托尼思·伊丽沙白·范吉莫特 , 西恩拉德·科内利斯·塔克 , 马藤·奥尔德森
IPC分类号： H01L23/538 , H01L21/768
CPC分类号： H01L24/17 , B81B7/0048 , B81B7/007 , H01L24/11 , H01L24/14 , H01L24/73 , H01L2224/10135 , H01L2224/10165 , H01L2224/131 , H01L2224/1329 , H01L2224/13339 , H01L2224/1401 , H01L2224/14134 , H01L2224/16238 , H01L2224/1701 , H01L2224/26165 , H01L2224/26175 , H01L2224/29013 , H01L2224/29035 , H01L2224/32225 , H01L2224/73103 , H01L2224/73203 , H01L2224/73204 , H01L2224/81201 , H01L2224/81801 , H01L2224/81855 , H01L2224/83855 , H01L2224/92125 , H01L2924/35 , H01L2924/351 , H01L2924/00014 , H01L2924/00012 , H01L2924/014
摘要： 本发明提供一种管芯互连体，包括：具有芯片区域的芯片，其中该芯片区域包括：悬垂区域；刚性耦合区域，其具有一组固定耦合点，位于悬垂区域的一侧；和柔性耦合区域，其具有一组活动耦合点，位于悬垂区域的与固定耦合区域相反的一侧。
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公开(公告)号：CN102347284B
公开(公告)日：2015-05-27
申请号：CN201110037676.4
申请日：2011-02-10
申请人： 台湾积体电路制造股份有限公司
IPC分类号： H01L23/00 , H01L21/60 , H01L23/488
CPC分类号： H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
摘要： 本发明一实施例提供一种半导体元件及其形成方法，其中半导体元件的形成方法包括：提供一基底；于该基底上形成一焊料凸块；将一少量元素导入至一区域中，该区域邻接该焊料凸块的一顶表面；以及对该焊料凸块进行一回焊工艺以驱使该少量元素进入该焊料凸块之中。采用本发明的实施例，在公知技术中不适合加进金属凸块中的许多类型的少量元素现可被添加。因此，金属凸块的性质可获显著的提升。
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公开(公告)号：CN104205312A
公开(公告)日：2014-12-10
申请号：CN201380017110.2
申请日：2013-03-21
申请人： 田中贵金属工业株式会社
CPC分类号： H01L24/83 , B22F1/0074 , B22F1/025 , B23K1/203 , B23K35/0222 , B23K35/0244 , B23K35/025 , B23K35/226 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K35/322 , B23K2101/40 , H01B1/22 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L2224/0401 , H01L2224/04026 , H01L2224/05082 , H01L2224/05166 , H01L2224/05169 , H01L2224/05644 , H01L2224/11312 , H01L2224/11318 , H01L2224/1132 , H01L2224/11416 , H01L2224/13294 , H01L2224/13339 , H01L2224/13347 , H01L2224/13364 , H01L2224/13444 , H01L2224/16227 , H01L2224/27312 , H01L2224/27318 , H01L2224/2732 , H01L2224/27416 , H01L2224/29294 , H01L2224/29339 , H01L2224/29347 , H01L2224/29364 , H01L2224/29444 , H01L2224/32225 , H01L2224/81192 , H01L2224/81203 , H01L2224/81444 , H01L2224/8184 , H01L2224/83192 , H01L2224/83203 , H01L2224/83444 , H01L2224/8384 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01203 , H01L2924/014 , H01L2924/10253 , H01L2924/15747 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： 本发明为一种导电性糊，其为由金属粉末和有机溶剂构成的芯片接合用导电性糊，其中，所述金属粉末由选自纯度为99.9质量％以上、平均粒径为0.01μm～1.0μm的银粉、钯粉、铜粉中的一种以上的金属粒子和包覆所述金属粒子的至少一部分的由金构成的包覆层构成。根据本发明的导电性糊，在将半导体元件等往衬底上进行芯片接合时，能够抑制在接合部产生空隙等缺陷。
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