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公开(公告)号:CN108281410A
公开(公告)日:2018-07-13
申请号:CN201711462241.8
申请日:2013-06-05
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/538 , H01L21/768
CPC分类号: H01L24/02 , H01L21/4853 , H01L21/76885 , H01L23/49811 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02125 , H01L2224/02141 , H01L2224/02145 , H01L2224/0215 , H01L2224/0401 , H01L2224/05114 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05647 , H01L2224/10125 , H01L2224/11013 , H01L2224/11019 , H01L2224/1112 , H01L2224/11462 , H01L2224/11472 , H01L2224/13012 , H01L2224/13015 , H01L2224/13017 , H01L2224/13023 , H01L2224/13026 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13551 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/13582 , H01L2224/136 , H01L2224/13686 , H01L2224/1369 , H01L2224/14051 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/81007 , H01L2224/81143 , H01L2224/81191 , H01L2224/81203 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/8181 , H01L2224/81895 , H01L2224/8192 , H01L2224/81948 , H01L2225/06513 , H01L2924/04941 , H01L2924/07025 , H01L2924/181 , H01L2924/301 , H01L2924/35 , Y10T29/49144 , H01L2924/00014 , H01L2924/014 , H01L2924/05432 , H01L2924/053 , H01L2924/00 , H01L2924/00012
摘要: 本发明公开了凸块导线直连(BOT)结构的一个实施例,包括:由集成电路支撑的接触元件、与接触元件电连接的凸块下金属(UBM)部件、设置在凸块下金属部件和集成电路之间的绝缘层和钝化层;安装在凸块下金属部件上的金属梯状凸块和安装在衬底上的衬底导线,其中,金属梯状凸块具有第一楔形轮廓,并具有最接近集成电路的安装端和离集成电路最远的末端,末端的宽度介于10μm至80μm之间,安装端的宽度介于20μm至90μm之间,该衬底导线具有第二楔形轮廓并且通过直接金属与金属接合连接至金属梯状凸块。可以以类似的方式制造芯片与芯片结构的实施例。本发明还提供了互连结构及其形成方法。
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公开(公告)号:CN106688085A
公开(公告)日:2017-05-17
申请号:CN201480081816.X
申请日:2014-09-09
申请人: 千住金属工业株式会社
IPC分类号: H01L21/60 , B22F1/00 , H01L21/3205 , H01L21/768 , H01L23/50 , H01L23/522 , H05K3/34
CPC分类号: H01L24/13 , B22F1/00 , B23K35/0227 , B23K35/26 , B23K35/262 , B23K35/30 , B23K35/302 , B23K35/3615 , B32B15/01 , B32B15/20 , B32B2255/06 , B32B2255/205 , C22C9/00 , C22C13/00 , C25D5/10 , C25D5/12 , C25D7/00 , H01B1/026 , H01L21/2885 , H01L21/76885 , H01L23/481 , H01L23/50 , H01L23/522 , H01L24/11 , H01L2224/11825 , H01L2224/13005 , H01L2224/13147 , H01L2224/1357 , H01L2224/1358 , H01L2224/13582 , H01L2224/13655 , H01L2224/13657 , H01L2224/1366 , H01L2224/1369 , H01L2924/0002 , H01L2924/01015 , H01L2924/01016 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01048 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0109 , H01L2924/01092 , H01L2924/35 , H05K3/4015 , H05K2201/10242
摘要: 本发明提供维氏硬度低、且算术平均粗糙度小的Cu柱、Cu芯柱、钎焊接头及硅穿孔电极。本发明的Cu柱1的纯度为99.9%以上且99.995%以下,算术平均粗糙度为0.3μm以下,维氏硬度为20HV以上且60HV以下。Cu柱1在软钎焊温度下不熔融,能够确保一定的焊点高度(基板间的空间),因此适用于三维安装、窄间距安装。
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公开(公告)号:CN102237317B
公开(公告)日:2016-05-11
申请号:CN201010527780.7
申请日:2010-10-28
申请人: 台湾积体电路制造股份有限公司
CPC分类号: H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/0401 , H01L2224/05023 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05541 , H01L2224/05568 , H01L2224/05582 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05681 , H01L2224/05687 , H01L2224/10145 , H01L2224/11002 , H01L2224/1112 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11827 , H01L2224/11831 , H01L2224/11849 , H01L2224/11912 , H01L2224/13005 , H01L2224/13007 , H01L2224/13023 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13123 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13181 , H01L2224/13551 , H01L2224/13561 , H01L2224/13565 , H01L2224/1357 , H01L2224/1358 , H01L2224/13582 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/13686 , H01L2224/13687 , H01L2224/13688 , H01L2224/1369 , H01L2224/81192 , H01L2224/81193 , H01L2224/814 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/05442 , H01L2924/0665 , H01L2924/07025 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/3841 , H01L2924/0105 , H01L2224/11 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/00 , H01L2224/05552
摘要: 本发明提供一种集成电路元件与封装组件,集成电路元件包括:半导体基底;导电柱,设置于半导体基底之上,具有侧壁表面与上表面;凸块下金属层,设置于半导体基底与导电柱之间,具有一表面区域邻接至导电柱的侧壁表面且由侧壁表面延伸;以及保护结构,设置于铜柱的该侧壁表面上与凸块下金属层的表面区域上,其中保护结构由非金属材料形成,且导电柱由含铜层形成。本发明的侧壁保护结构,覆盖凸块结构的侧壁表面的至少一部分,在铜柱侧壁上以及凸块下金属层的表面区域上的保护结构由至少一非金属材料层形成,例如介电材料层、高分子材料层或前述的组合。本发明能够避免铜柱侧壁被氧化,以及增加在铜柱侧壁与后续形成的底部填胶材料之间的粘着力。
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公开(公告)号:CN101894772A
公开(公告)日:2010-11-24
申请号:CN201010213052.9
申请日:2010-06-28
申请人: 华为终端有限公司
发明人: 罗德威
IPC分类号: H01L21/60 , H01L23/498 , H05K1/18 , H05K3/34
CPC分类号: H05K13/04 , H01L21/563 , H01L23/293 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/03828 , H01L2224/0401 , H01L2224/11822 , H01L2224/131 , H01L2224/1369 , H01L2224/16225 , H01L2224/16227 , H01L2224/81011 , H01L2224/81355 , H01L2224/81815 , H01L2224/81862 , H01L2224/81905 , H01L2924/01006 , H01L2924/0105 , H01L2924/01057 , H01L2924/014 , H05K1/181
摘要: 本发明涉及PCBA加工,公开了增强芯片焊点可靠性的方法、印刷电路板及电子设备,其中,增强芯片焊点可靠性的方法包括:将环氧树脂助焊剂蘸到芯片的焊脚上或将环氧树脂助焊剂涂到芯片焊脚对应的焊盘上,将所述芯片贴装到焊盘;对贴装了所述芯片的焊盘进行回流处理,完成环氧树脂助焊剂的固化。使用本发明不需要使用Underfill工艺,从而降低设备成本投入,提高制造效率。
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公开(公告)号:CN106688085B
公开(公告)日:2019-06-18
申请号:CN201480081816.X
申请日:2014-09-09
申请人: 千住金属工业株式会社
IPC分类号: H01L21/60 , B22F1/00 , H01L21/3205 , H01L21/768 , H01L23/50 , H01L23/522 , H05K3/34
CPC分类号: H01L24/13 , B22F1/00 , B23K35/0227 , B23K35/26 , B23K35/262 , B23K35/30 , B23K35/302 , B23K35/3615 , B32B15/01 , B32B15/20 , B32B2255/06 , B32B2255/205 , C22C9/00 , C22C13/00 , C25D5/10 , C25D5/12 , C25D7/00 , H01B1/026 , H01L21/2885 , H01L21/76885 , H01L23/481 , H01L23/50 , H01L23/522 , H01L24/11 , H01L2224/11825 , H01L2224/13005 , H01L2224/13147 , H01L2224/1357 , H01L2224/1358 , H01L2224/13582 , H01L2224/13655 , H01L2224/13657 , H01L2224/1366 , H01L2224/1369 , H01L2924/0002 , H01L2924/01015 , H01L2924/01016 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01048 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0109 , H01L2924/01092 , H01L2924/35 , H05K3/4015 , H05K2201/10242
摘要: 本发明提供维氏硬度低、且算术平均粗糙度小的Cu柱、Cu芯柱、钎焊接头及硅穿孔电极。本发明的Cu柱1的纯度为99.9%以上且99.995%以下,算术平均粗糙度为0.3μm以下,维氏硬度为20HV以上且60HV以下。Cu柱1在软钎焊温度下不熔融,能够确保一定的焊点高度(基板间的空间),因此适用于三维安装、窄间距安装。
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公开(公告)号:CN103035618B
公开(公告)日:2015-12-16
申请号:CN201210032013.8
申请日:2012-02-13
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/544
CPC分类号: H01L22/32 , H01L23/3192 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05024 , H01L2224/05027 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/11823 , H01L2224/13022 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13565 , H01L2224/13566 , H01L2224/13578 , H01L2224/13644 , H01L2224/13655 , H01L2224/1369 , H01L2224/16148 , H01L2224/73204 , H01L2224/81193 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/181 , H01L2924/01029 , H01L2224/81 , H01L2224/05552 , H01L2924/00
摘要: 一种工件,包括:第一含铜柱,该第一含铜柱具有顶面和侧壁;第一保护层,该第一保护层位于第一含铜柱的侧壁上而不位于第一含铜柱的顶面上方;测试焊盘,该测试焊盘包括第二含铜柱,该第二含铜柱具有顶面和侧壁,该测试焊盘电连接至第一含铜柱;以及第二保护层,该第二保护层被设置在第二含铜柱的侧壁上,而不设置在第二含铜柱的顶面上方,第一保护层和第二保护层包含铜和聚合物的化合物,并且是介电层。本发明还提供了用于3DIC测试的结构设计。
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公开(公告)号:CN102881666B
公开(公告)日:2015-07-08
申请号:CN201210295014.1
申请日:2012-08-17
申请人: 香港应用科技研究院有限公司
IPC分类号: H01L23/31 , H01L23/488 , H01L27/146 , H01L21/56
CPC分类号: H01L27/14618 , H01L23/3114 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/81 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L27/14632 , H01L27/14687 , H01L2224/03464 , H01L2224/0401 , H01L2224/04105 , H01L2224/05155 , H01L2224/05644 , H01L2224/10156 , H01L2224/1132 , H01L2224/1182 , H01L2224/1183 , H01L2224/11849 , H01L2224/12105 , H01L2224/131 , H01L2224/13147 , H01L2224/1319 , H01L2224/13565 , H01L2224/1369 , H01L2224/16106 , H01L2224/16108 , H01L2224/16148 , H01L2224/16157 , H01L2224/16168 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17181 , H01L2224/2101 , H01L2224/211 , H01L2224/214 , H01L2224/215 , H01L2224/32225 , H01L2224/73203 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81447 , H01L2224/81801 , H01L2224/8185 , H01L2224/81895 , H01L2224/9202 , H01L2224/92222 , H01L2224/92224 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/10156 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/0665 , H01L2924/00014 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2224/19 , H01L21/78 , H01L2924/00
摘要: 本发明提供一种晶圆级封装的半导体器件,整个封装器件形成后才分离成单个器件。该半导体器件封装包括半导体芯片,有一个或多个焊盘与该芯片连接,还有一保护层连接在该半导体芯片之上。至少在半导体芯片的侧边缘和底表面上有一隔离层。有互连金属化凸点靠近该半导体芯片的一个或多个侧边缘,并电连接到至少一个焊盘上。一个小型化的图像传感器可以和数字信号处理器和存储器芯片以及透镜和保护盖垂直集成在一起。
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公开(公告)号:CN101859786B
公开(公告)日:2015-07-01
申请号:CN201010149978.6
申请日:2010-04-08
申请人: 海力士半导体有限公司
IPC分类号: H01L27/146 , H01L23/485 , H01L23/498 , H01L21/60
CPC分类号: H01L27/14625 , H01L24/13 , H01L24/16 , H01L27/14618 , H01L27/14621 , H01L27/14636 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13562 , H01L2224/1369 , H01L2224/1379 , H01L2224/138 , H01L2224/16225 , H01L2224/16227 , H01L2924/00014 , H01L2924/07802 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: 本发明公开了一种图像传感器模块,包括:半导体芯片、固定座和耦合元件。半导体芯片具有:半导体芯片体、在半导体芯片体上的图像传感部、和在半导体芯片体上的焊垫。固定座安装于半导体芯片上,并且具有:在半导体芯片体上的绝缘部;在绝缘部上的连接图案,所述连接图案与焊垫电耦合;和在图像传感部上的透明盖,与绝缘部相连接。耦合元件介于固定座和半导体芯片之间从而固定座和半导体芯片耦合。
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公开(公告)号:CN102280423B
公开(公告)日:2014-06-04
申请号:CN201110025101.0
申请日:2011-01-20
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/488 , H01L21/60
CPC分类号: H01L24/11 , H01L23/488 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05099 , H01L2224/05571 , H01L2224/05599 , H01L2224/10126 , H01L2224/10145 , H01L2224/1182 , H01L2224/11823 , H01L2224/1191 , H01L2224/13017 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/13578 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2224/1369 , H01L2224/16058 , H01L2224/16148 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2224/81801 , H01L2224/81815 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/0002 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/37001 , H01L2924/00 , H01L2224/81 , H01L2224/16225 , H01L2924/00012 , H01L2224/16145 , H01L2924/00014 , H01L2924/01047 , H01L2224/05552 , H01L2224/81805
摘要: 本发明公开了一种集成电路装置及其制造方法。本发明的集成电路装置的工作件(work?piece)包括具有上表面和侧壁的铜凸块。在铜凸块的侧壁上形成保护层,但其上表面没有保护层。保护层包括铜的化合物和聚合物,且为介电层。本发明提供的集成电路装置及其制造方法,在裸片对晶片接合工艺中,即使工作件的温度高时,保护层也可避免铜凸块的氧化。
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公开(公告)号:CN102201375A
公开(公告)日:2011-09-28
申请号:CN201010257039.3
申请日:2010-08-17
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/00
CPC分类号: H01L21/76885 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/023 , H01L2224/0345 , H01L2224/0361 , H01L2224/03614 , H01L2224/03901 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05024 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05578 , H01L2224/05647 , H01L2224/0569 , H01L2224/10126 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11614 , H01L2224/1182 , H01L2224/11827 , H01L2224/11849 , H01L2224/11901 , H01L2224/11912 , H01L2224/13099 , H01L2224/13147 , H01L2224/13561 , H01L2224/13562 , H01L2224/13564 , H01L2224/13565 , H01L2224/13582 , H01L2224/13583 , H01L2224/13609 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/1369 , H01L2224/16238 , H01L2224/81024 , H01L2224/81191 , H01L2224/814 , H01L2224/81411 , H01L2224/81413 , H01L2224/81416 , H01L2224/81439 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/206 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/01028 , H01L2924/01022 , H01L2924/01046 , H01L2924/01083 , H01L2924/01051 , H01L2924/00
摘要: 本发明公开了一种集成电路装置及封装组件,该集成电路装置包括:半导体基板;第一凸块底金属层形成于半导体基板之上;第二凸块底金属层形成于第一凸块底金属层之上且具有侧面;导电柱形成于第二凸块底金属层之上且具有侧面与顶面;保护结构形成于导电柱的侧面与第二凸块底金属层的侧面之上;其中保护结构由非金属材料所形成而导电柱由含铜层所形成。本发明提供了用于铜柱凸块技术的侧壁保护工艺,其于铜柱凸块的侧壁上形成由例如一介电材料层、一聚合物层或上述膜层的组合的至少一种非金属的材料膜层所形成的一保护结构。本发明可调整基板的应力,避免了于回焊工艺中沿着凸块底金属层的周围的铜柱的焊锡湿润情形,因此适用于精细间距凸块技术。
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