摘要:
The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.
摘要:
Spring contact elements are fabricated by depositing at least one layer of metallic material into openings defined on a sacrificial substrate. The openings may be within the surface of the substrate, or in one or more layers deposited on the surface of the sacrificial substrate. Each spring contact element has a base end portion, a contact end portion, and a central body portion. The contact end portion is offset in the z-axis (at a different height) than the central body portion. The base end portion is preferably offset in an opposite direction along the z-axis from the central body portion. In this manner, a plurality of spring contact elements are fabricated in a prescribed spatial relationship with one another on the sacrificial substrate. The spring contact elements are suitably mounted by their base end portions to corresponding terminals on an electronic component, such as a space transformer or a semiconductor device, whereupon the sacrificial substrate is removed so that the contact ends of the spring contact elements extend above the surface of the electronic component. In an exemplary use, the spring contact elements are thereby disposed on a space transformer component of a probe card assembly so that their contact ends effect pressure connections to corresponding terminals on another electronic component, for the purpose of probing the electronic component.
摘要:
The probe card assembly (500) includes a probe card (502), and a space transformer (506) having resilient contact structures (524) mounted to and extending from terminals (522) on its surface. An interposer (504) is disposed between the space transformer and the probe card. The space transformer and interposer are stacked on the probe card and the resilient contact structures can be arranged to optimise probing of entire wafer.
摘要:
An apparatus and method providing improved interconnection elements and tip structures for effecting pressure connections between terminals of electronic components is described. The tip structure of the present invention has a sharpened blade oriented on the upper surface of the tip structure such that the length of the blade is substantially parallel to the direction of horizontal movement of the tip structure as the tip structure deflects across the terminal of an electronic component. In this manner, the sharpened substantially parallel oriented blade slices cleanly through any non-conductive layer(s) on the surface of the terminal and provides a reliable electrical connection between the interconnection element and the terminal of the electrical component.
摘要:
The probe card assembly (500) includes a probe card (502), and a space transformer (506) having resilient contact structures (524) mounted to and extending from terminals (522) on its surface. An interposer (504) is disposed between the space transformer and the probe card. The space transformer and interposer are stacked on the probe card and the resilient contact structures can be arranged to optimise probing of entire wafer.
摘要:
Resilient contact structures (430) are mounted directly to bond pads (410) on semiconductor dies (402a, 402b), prior to the dies (402a, 402b) being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies (402a, 402b) to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies (702, 704) with a circuit board (710) or the like having a plurality of terminals (712) disposed on a surface thereof. Subsequently, the semiconductor dies (402a, 402b) may be singulated from the semiconductor wafer, whereupon the same resilient contact structures (430) can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements (430) of the present invention as the resilient contact structures, burn-in (792) can be performed at temperatures of at least 150 °C, and can be completed in less than 60 minutes.
摘要:
A probe card assembly can include a probe head assembly having probes for contacting an electronic device to be tested. The probe head assembly can be electrically connected to a wiring substrate and mechanically attached to a stiffener plate. The wiring substrate can provide electrical connections to a testing apparatus, and the stiffener plate can provide structure for attaching the probe card assembly to the testing apparatus. The stiffener plate can have a greater mechanical strength than the wiring substrate and can be less susceptible to thermally induced movement than the wiring substrate. The wiring substrate may be attached to the stiffener plate at a central location of the wiring substrate. Space may be provided at other locations where the wiring substrate is attached to the stiffener plate so that the wiring substrate can expand and contract with respect to the stiffener plate.
摘要:
The probe card assembly (500) includes a probe card (502), and a space transformer (506) having resilient contact structures (524) mounted to and extending from terminals (522) on its surface. An interposer (504) is disposed between the space transformer and the probe card. The space transformer and interposer are stacked on the probe card and the resilient contact structures can be arranged to optimise probing of entire wafer.
摘要:
A method of designing and manufacturing a probe card assembly includes prefabricating one or more elements of the probe card assembly to one or more predefined designs. Thereafter, design data regarding a newly designed semiconductor device is received along with data describing the tester and testing algorithms to be used to test the semiconductor device. Using the received data, one or more of the prefabricated elements is selected. Again using the received data, one or more of the selected prefabricated elements is customized. The probe card assembly is then built using the selected and customized elements.
摘要:
A method of forming a probe array includes forming a layer of tip material (101) over a block of probe material. A first electron discharge machine (EDM) electrode (201) is positioned over the layer of tip material, the EDM electrode having a plurality of openings corresponding to a plurality of probes to be formed. Excess material from the layer of tip material and the block of probe material is removed to form the plurality of probes. A substrate having a plurality of through holes corresponding to the plurality of probes is positioned so that the probes penetrate the plurality of through holes. The substrate is bonded to the plurality of probes. Excess probe material is removed so as to planarize the substrate.