公开(公告)号：EP3657556A1

公开(公告)日：2020-05-27

申请号：EP19210679.7

申请日：2019-11-21

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： ALIANE, Abdelkader ,  OUVRIER-BUFFET, Jean-Louis ,  ANDRE, Luc ,  KAYA, Hacile

IPC分类号： H01L31/18 ,  H01L31/105 ,  H01L31/103 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0232

摘要： L'invention porte sur un procédé de fabrication d'au moins une photodiode 1 planaire passivée, comportant les étapes suivantes :
- réalisation d'une portion semiconductrice de détection 10 ;
- dépôt d'une couche diélectrique de passivation 20 ;
- réalisation d'une portion périphérique 21 réalisée en un matériau semiconducteur dopé
- recuit de diffusion des éléments dopants depuis la portion périphérique 21 dans la portion semiconductrice de détection 10, formant une région périphérique 14 dopée ;
- réalisation d'une région supérieure 11 dopée, entourée par la région périphérique 14 dopée.

公开(公告)号：EP3261132A1

公开(公告)日：2017-12-27

申请号：EP17186412.7

申请日：2013-08-07

申请人： Dimerond Technologies, LLC ,  Gruen, Dieter M.

发明人： Gruen,, Dieter M.

IPC分类号： H01L31/042 ,  B82Y40/00 ,  H01L31/0352 ,  H01L35/00 ,  H02S40/44 ,  H01L31/0312 ,  H01L31/054

CPC分类号： H01L31/035227 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/06 ,  H01L29/0676 ,  H01L29/15 ,  H01L29/1606 ,  H01L29/1608 ,  H01L31/00 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0543 ,  H01L31/0547 ,  H01L51/0048 ,  H02S10/10 ,  H02S40/44 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/60

摘要： There is provided a modality of solar energy conversion comprising: a plurality of cores consisting essentially of a wide band-gap material, wherein each core has at least one bisectional dimension that does not exceed 100 nanometres; a plurality of graphene shells, each consisting essentially of graphene, and each being disposed about at least a substantial portion of a respective core to form a core/shell structure; a first electrical pathway comprising a conducting base electrically connected to the cores, but not to the shells, at a first end of the core/shell structure; a second electrical pathway electrically connected to the graphene shells, but not to the cores, via graphene layers at a second end of the core/shell structure, wherein: in each core/shell structure, the wide band-gap material and the graphene shell form a photovoltaic junction, the first and second electrical pathways are arranged to couple to an electrical load.

摘要翻译： 提供了一种太阳能转换模式，包括：基本上由宽带隙材料组成的多个芯，其中每个芯具有不超过100纳米的至少一个二等分尺寸; 多个石墨烯外壳，每个石墨烯外壳基本上由石墨烯组成，并且各自围绕相应核心的至少大部分设置以形成核/壳结构; 第一电通路，其包括在所述核/壳结构的第一端处电连接到所述核而不与所述壳电连接的导电基座; 第二电通路，所述第二电通路经由所述核/壳结构的第二端处的石墨烯层而电连接到所述石墨烯壳，但不电连接到所述核，其中：在每个核/壳结构中，所述宽带隙材料和所述石墨烯壳 形成光伏结，第一和第二电路径被布置为耦合到电负载。

公开(公告)号：EP2286459A1

公开(公告)日：2011-02-23

申请号：EP09743007.8

申请日：2009-05-05

申请人： Carnegie Institution Of Washington

发明人： LIANG, Qi ,  YAN, Chih-Shiue ,  MAO, Ho-Kwang ,  HEMLEY, Russell

IPC分类号： H01L31/0312

CPC分类号： C23C16/278 ,  C23C16/274 ,  C30B23/00 ,  C30B25/00 ,  C30B25/105 ,  C30B25/16 ,  C30B25/165 ,  C30B29/04

摘要： The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 μm/h.

公开(公告)号：EP1744368A3

公开(公告)日：2010-12-01

申请号：EP06253486.2

申请日：2006-07-03

申请人： GENERAL ELECTRIC COMPANY

发明人： Sandvik, Peter Micah ,  Brown, Dale Marius ,  Burdick, William Edward ,  Rose, James Wilson ,  Sherman, Donna Marie ,  Short, Jonathan David ,  Rao, Naresh Kesavan

IPC分类号： H01L27/146 ,  H01L31/0312 ,  H01L31/101 ,  H01L31/0216 ,  H01L31/0203 ,  H01L25/16 ,  H01L23/498 ,  H01L23/538

CPC分类号： H01L31/02162 ,  H01L25/167 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14658 ,  H01L31/0203 ,  H01L31/0312 ,  H01L31/101 ,  H01L2224/48227 ,  H04N5/32

摘要： One photodetection system includes a wide bandgap photodetector array (10) which is physically and electrically integrated on a flexible interconnect layer (18) including electrical connections (20), which is packaged in a manner for being electrically integrated with processing electronics (14) such that the packaging and the processing electronics are configured for obtaining and processing signals detected by the photodetector array, or which includes both the flexible interconnect layer and processing electronics packaging features.

公开(公告)号：EP1522106A4

公开(公告)日：2009-12-16

申请号：EP03718122

申请日：2003-04-01

申请人： NANOSYS INC

发明人： EMPEDOCLES STEPHEN ,  BOCK LARRY ,  CHOW CALVIN ,  DUAN XIANFENG ,  NIU CHUNGMING ,  PONTIS GEORGE ,  SAHI VIJENDRA ,  ROMANO LINDA T ,  STUMBO DAVID

IPC分类号： B81C99/00 ,  C23F1/00 ,  H01L51/30 ,  H01L51/40 ,  H01L31/0312 ,  H01J1/30 ,  H01L21/00

CPC分类号： H01L51/0048 ,  B01J23/52 ,  B81B2203/0361 ,  B81B2207/015 ,  B81C3/005 ,  B81C99/008 ,  B81C2203/057 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/743 ,  G11C2213/81 ,  H01L29/7869 ,  H01L51/0001 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/89 ,  H01L2924/00

公开(公告)号：EP0940854B1

公开(公告)日：2009-10-28

申请号：EP99301205.3

申请日：1999-02-18

申请人： International Business Machines Corporation

发明人： Chu, Jack Oon ,  Ismail, Khalid EzzEldin ,  Koester, Steven John ,  Klepser, Bernd-Ulrich H.

IPC分类号： H01L27/144 ,  H01L31/0352 ,  H01L31/0312

CPC分类号： B82Y20/00 ,  H01L27/1443 ,  H01L31/0312 ,  H01L31/035254

公开(公告)号：EP1759422A2

公开(公告)日：2007-03-07

申请号：EP05755193.9

申请日：2005-06-02

申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

发明人： NUZZO, Ralph, G. ,  ROGERS, John, A. ,  MENARD, Etienne ,  LEE, Keon Jae ,  KHANG, Dahl-Young ,  SUN, Yugang ,  MEITL, Matthew ,  ZHU, Zhengtao

IPC分类号： H01L31/0312

CPC分类号： H01L29/76 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

公开(公告)号：EP1721338A2

公开(公告)日：2006-11-15

申请号：EP05723572.3

申请日：2005-02-22

申请人： ACTEL CORPORATION

发明人： ISSAQ, A., Farid ,  HAWLEY, Frank ,  MCCOLLUM, John

IPC分类号： H01L31/0256 ,  H01L29/00 ,  H01L31/0312 ,  H01L23/48

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A reprogrammable metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. A lower barrier layer is formed from Ti. A lower adhesion-promoting layer is disposed over the lower Ti barrier layer. An antifuse material layer selected from a group comprising at least one of amorphous carbon and amorphous carbon doped with at least one of hydrogen and fluorine is disposed over the lower adhesion-promoting layer. An upper adhesion-promoting layer is disposed over the antifuse material layer. An upper Ti barrier layer is disposed over the upper adhesion-promoting layer.

公开(公告)号：EP1522106A2

公开(公告)日：2005-04-13

申请号：EP03718122.9

申请日：2003-04-01

申请人： Nanosys, Inc.

发明人： EMPEDOCLES, Stephen ,  BOCK, Larry ,  CHOW, Calvin ,  DUAN, Xianfeng ,  NIU, Chungming ,  PONTIS, George ,  SAHI, Vijendra ,  ROMANO, Linda, T. ,  STUMBO, David

IPC分类号： H01L31/0312 ,  H01L21/00 ,  H01J1/30

CPC分类号： H01L51/0048 ,  B01J23/52 ,  B81B2203/0361 ,  B81B2207/015 ,  B81C3/005 ,  B81C99/008 ,  B81C2203/057 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/743 ,  G11C2213/81 ,  H01L29/7869 ,  H01L51/0001 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/89 ,  H01L2924/00

摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements, such as junctions (850), arrays (830), and devices (800) are provided. Systems for practicing the methods are also provided.

公开(公告)号：EP1231648A3

公开(公告)日：2004-12-08

申请号：EP02076531.9

申请日：1996-06-05

申请人： Sharp Kabushiki Kaisha

发明人： Nakamura, Kazuyo ,  Hisamatsu, Tadashi

IPC分类号： H01L31/075 ,  H01L31/0312 ,  H01L31/072 ,  H01L31/052 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L31/06 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell comprises a crystalline Si substrate (1) of first type conductivity; a diffusion layer (2) of second type conductivity formed on a first main surface side of said substrate;    an Si 1-x Ge x (0 1-x Ge x alloy layer. The intermediate semiconductor layer has an intermediate refractive index smaller than that of Si and has an energy bandgap larger than the energy bandgap of said Si 1-x Ge x .

摘要翻译： 太阳能电池包括第一导电类型的晶体Si衬底（1） 在所述基板的第一主表面侧上形成的第二导电类型的扩散层（2） 在所述衬底的第二主表面侧上形成的Si1-xGex（0