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公开(公告)号：JP5437111B2
公开(公告)日：2014-03-12
申请号：JP2010044434
申请日：2010-03-01
申请人： 日東電工株式会社
IPC分类号： H01L25/18 , H01L21/52 , H01L25/065 , H01L25/07
CPC分类号： H01L24/27 , C09J7/10 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L21/6836 , H01L23/3121 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29386 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83191 , H01L2224/85206 , H01L2224/85207 , H01L2224/92247 , H01L2225/0651 , H01L2225/06568 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3025 , Y10T428/24959 , Y10T428/28 , Y10T428/2848 , Y10T428/287 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/0532 , H01L2924/05432 , H01L2924/05032 , H01L2924/0503 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： The present invention provides a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element and that enables loading of the other semiconductor element and improvement in the manufacturing yield of a semiconductor device by preventing deformation and cutting of the bonding wire, and a dicing die bond film. The die bond film of the present invention is a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element, in which at least a first adhesive layer that enables a portion of the bonding wire to pass through inside thereof by burying the portion upon press bonding and a second adhesive layer that prevents the other semiconductor element from contacting with the bonding wire are laminated.
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公开(公告)号：JP5023225B1
公开(公告)日：2012-09-12
申请号：JP2011052973
申请日：2011-03-10
申请人： 日東電工株式会社
IPC分类号： H01L21/52 , C09J7/02 , C09J201/00 , H01L21/301
CPC分类号： H01L21/56 , C09J2203/326 , H01L21/67132 , H01L21/6836 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2221/68327 , H01L2221/68377 , H01L2221/68381 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83862 , H01L2224/83906 , H01L2224/85205 , H01L2224/9205 , H01L2224/92247 , H01L2924/00013 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/3512 , H01L2924/00012
摘要： The present invention aims to provides a method of manufacturing a film for a semiconductor device in which a dicing film, a die bond film, and a protecting film are laminated in this order, including the steps of: irradiating the die bond film with a light ray having a wavelength of 400 to 800 nm to detect the position of the die bond film based on the obtained light transmittance and punching the dicing film out based on the detected position of the die bond film, and in which T2/T1 is 0.04 or more, wherein T1 is the light transmittance of the portion where the dicing film and the protecting film are laminated and T2 is the light transmittance of the portion where the dicing film, the die bond film, and the protecting film are laminated.
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公开(公告)号：JP5561949B2
公开(公告)日：2014-07-30
申请号：JP2009094150
申请日：2009-04-08
申请人： 日東電工株式会社
IPC分类号： H01L21/52 , C09J7/00 , C09J11/06 , C09J161/04 , C09J201/00
CPC分类号： H01L21/78 , C08L33/12 , C08L61/00 , C08L63/00 , C08L2203/162 , C08L2205/03 , H01L24/29 , H01L24/33 , H01L24/45 , H01L24/73 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29386 , H01L2224/29393 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2225/06565 , H01L2225/06568 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , Y10T428/2874 , C08L2666/04 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/05432 , H01L2924/0532 , H01L2924/04642 , H01L2924/05042 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： The present invention has been made and an object thereof is to provide a thermosetting die-bonding film which can remarkably reduce working hours at the time of die bonding of a semiconductor chip, and a dicing die-bonding film including the thermosetting die-bonding film and a dicing film layered to each other. The present invention relates to a thermosetting die-bonding film used to produce a semiconductor device, comprising a thermosetting catalyst in a non-crystalline state in an amount within a range from 0.2 to 1 part by weight based on 100 parts by weight of an organic component in the film.
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公开(公告)号：JP5456807B2
公开(公告)日：2014-04-02
申请号：JP2012025375
申请日：2012-02-08
申请人： 日東電工株式会社
IPC分类号： H01L21/301 , C09J7/00 , C09J11/00 , C09J133/00 , C09J161/04 , C09J163/00 , H01L21/52
CPC分类号： H01L24/29 , H01L24/27 , H01L24/83 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2224/83191 , H01L2224/85207 , H01L2224/92247 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
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公开(公告)号：JP5143196B2
公开(公告)日：2013-02-13
申请号：JP2010166068
申请日：2010-07-23
申请人： 日東電工株式会社
IPC分类号： H01L21/301 , C09J7/02 , C09J201/00 , H01L21/52
CPC分类号： H01L21/67132 , Y10T428/14
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6.发明专利
公开(公告)号：JP5425975B2
公开(公告)日：2014-02-26
申请号：JP2012145722
申请日：2012-06-28
申请人： 日東電工株式会社
CPC分类号： H01L24/85 , H01L23/3121 , H01L24/16 , H01L24/42 , H01L24/45 , H01L24/48 , H01L25/03 , H01L25/50 , H01L2224/05599 , H01L2224/16225 , H01L2224/16227 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/814 , H01L2224/81815 , H01L2224/85 , H01L2224/85205 , H01L2224/85399 , H01L2224/92247 , H01L2225/06506 , H01L2225/0651 , H01L2225/06517 , H01L2225/06575 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/014 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20754 , H01L2924/00012
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公开(公告)号：JP5368608B2
公开(公告)日：2013-12-18
申请号：JP2012149597
申请日：2012-07-03
申请人： 日東電工株式会社
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a dicing film with a protection film which shortens a down time, and can stick a dicing film onto a semiconductor wafer without positional deviation. SOLUTION: In the dicing film with the protection film in which a dicing film and a protection film are stacked, a difference between the transmissivity at a wavelength of 600-700 nm of the protection film and the transmissivity of the dicing film with the protection film in a portion through which light for film detection of the dicing film firstly transmits is 20% or more. COPYRIGHT: (C)2013,JPO&INPIT
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公开(公告)号：JP5219302B2
公开(公告)日：2013-06-26
申请号：JP2010023420
申请日：2010-02-04
申请人： 日東電工株式会社
IPC分类号： H01L21/52 , C09J7/00 , C09J7/02 , C09J133/04 , C09J161/06 , C09J163/00 , H01L21/301
CPC分类号： H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a thermosetting die-bonding film which limits warpage of an object to be bonded by thermosetting. SOLUTION: The thermosetting die-bonding film 3 used for bonding a semiconductor chip to an object to be bonded has an integrated value of tensile storage elastic modulus of 1-50 GPa, in the range of temperature of 25-120°C, after carrying out thermosetting on conditions of 1 hour at 120°C. The thermosetting die-bonding film 3 contains epoxy resin and/or phenol resin as the thermosetting resin, and contains acrylic resin as the thermoplastic resin. COPYRIGHT: (C)2011,JPO&INPIT
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公开(公告)号：JP5390209B2
公开(公告)日：2014-01-15
申请号：JP2009024023
申请日：2009-02-04
申请人： 日東電工株式会社
IPC分类号： H01L21/52 , C09J7/00 , C09J7/02 , C09J201/00
CPC分类号： H01L2224/32145 , H01L2224/32225 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
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公开(公告)号：JP5036887B1
公开(公告)日：2012-09-26
申请号：JP2011054304
申请日：2011-03-11
申请人： 日東電工株式会社
IPC分类号： H01L21/301
CPC分类号： H01L21/6836 , B32B7/02 , B32B7/12 , B32B27/20 , B32B27/281 , B32B27/36 , B32B27/365 , B32B2457/14 , C09J7/385 , C09J2203/326 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2221/68327 , H01L2221/68377 , H01L2221/68381 , H01L2224/27436 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29386 , H01L2224/29388 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/8385 , H01L2224/83862 , H01L2224/85 , H01L2224/9205 , H01L2224/92247 , H01L2224/94 , H01L2924/00013 , H01L2924/01012 , H01L2924/01015 , H01L2924/01029 , H01L2924/01047 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/3025 , Y10T428/1467 , Y10T428/1471 , Y10T428/24802 , Y10T428/24942 , H01L2224/27 , H01L2924/00014 , H01L2924/00 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/3512 , H01L2924/00012
摘要： The present invention provides a dicing film with a protecting film that enables to paste a dicing film to a semiconductor wafer without a shift in position while reducing a downtime. There is provided a dicing film with a protecting film in which a dicing film and a protecting film are laminated, wherein the difference between the transmittance of the protecting film and the transmittance of the dicing film with a protecting film at a portion of the dicing film where light for detecting a film transmits first is 20% or more in a wavelength of 600 to 700 nm.
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