公开(公告)号：KR1020140134303A

公开(公告)日：2014-11-21

申请号：KR1020147026856

申请日：2013-08-20

申请人： 가켄 테크 가부시키가이샤

发明人： 호리시게오 ,  후루이히로히코 ,  후지타아키라

IPC分类号： H01B1/22 ,  H01B1/00 ,  H01L21/52

CPC分类号： H01L24/83 ,  B22F1/0051 ,  B22F1/0062 ,  B22F1/0074 ,  B22F9/24 ,  B23K1/0008 ,  B23K1/0016 ,  B23K31/12 ,  B23K35/025 ,  B23K35/3006 ,  B23K35/3613 ,  H01B1/22 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/27312 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29395 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/8323 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/066

摘要： XRD 분석으로 규정되는 소정의 결정 변화 특성을 갖는 은 입자를 사용함에 의해, 도전성 페이스트 중에서의 은 입자의 소결성을 용이하게 제어할 수 있으며, 나아가서는 소결 처리 후에 있어서, 우수한 전기 전도성 및 열전도성을, 안정적으로 얻을 수 있는 도전성 페이스트 및 그것을 사용한 다이 본딩 방법을 제공한다. 소결성 도전재로서의 체적 평균 입자경이 0.1∼30㎛인 은 입자와, 페이스트상으로 하기 위한 분산매를 함유하는 도전성 페이스트 등으로서, 은 입자의 소결 전의 XRD 분석에 의하여 얻어지는 X선 회절 차트에 있어서의 2θ=38°±0.2°의 피크 적분 강도를 S1로 하고, 은 입자의 소결 처리 후(250℃, 60분)의 XRD 분석에 의하여 얻어지는 X선 회절 차트에 있어서의 2θ=38°±0.2°의 피크의 적분 강도를 S2로 했을 때에, S2/S1의 값을 0.2∼0.8의 범위 내의 값으로 한다.

公开(公告)号：KR1020140109134A

公开(公告)日：2014-09-15

申请号：KR1020130023461

申请日：2013-03-05

申请人： 삼성전자주식회사

发明人： 곽민근

IPC分类号： H01L23/48 ,  H01L23/12

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/5381 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/06135 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48681 ,  H01L2224/48684 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48781 ,  H01L2224/48784 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85466 ,  H01L2224/85469 ,  H01L2224/85476 ,  H01L2224/85481 ,  H01L2224/85484 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2924/07802 ,  H01L2924/10161 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/0715 ,  H01L2924/066 ,  H01L2924/07001 ,  H01L2924/0635 ,  H01L2924/00

摘要： Arranged is a substrate which first to fourth quadrant are defined thereof, and has a plurality of inner wirings, a plurality of first finger electrodes, and a plurality of second electrodes. Formed are outside terminals connected to the first finger electrodes and the second finger electrodes after being connected to the inner wirings at the bottom of the substrate. Formed is a first tower having a plurality of first semiconductor chips on the substrate. First conductive wires are formed between the first semiconductor chips and the first finger electrodes. Formed is a second tower separated from the first tower on the substrate, having a plurality of second semiconductor chips. Second conductive wires are formed between the second semiconductor chips and the second finger electrodes. Outer terminals include a first group, which is connected to the first finger electrodes and forms a first channel; and a second group which is separated from the first group, is connected to the second finger electrodes, and forms a second channel. The first finger electrodes are formed on the third quadrant of the substrate, and the second finger electrodes are formed on the first quadrant of the substrate.

摘要翻译： 排列是由第一至第四象限定义的衬底，并且具有多个内部布线，多个第一指状电极和多个第二电极。 形成在连接到基板底部的内部布线之后连接到第一指状电极和第二指状电极的外部端子。 形成在基板上具有多个第一半导体芯片的第一塔架。 第一导电线形成在第一半导体芯片和第一指状电极之间。 形成了与衬底上的第一塔分离的第二塔，具有多个第二半导体芯片。 在第二半导体芯片和第二指状电极之间形成第二导线。 外部端子包括第一组，其连接到第一指状电极并形成第一通道; 并且与第一组分离的第二组连接到第二指状电极，并形成第二通道。 第一指状电极形成在基板的第三象限上，第二指状电极形成在基板的第一象限上。

公开(公告)号：KR101299773B1

公开(公告)日：2013-08-23

申请号：KR1020117025251

申请日：2007-08-07

申请人： 린텍 가부시키가이샤

发明人： 야마자키오사무 ,  이치카와이사오 ,  사이키나오야

IPC分类号： H01L21/58 ,  H01L21/52 ,  H01L21/60

CPC分类号： H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/31 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/16 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/0715 ,  H01L2924/0675 ,  H01L2924/069 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： 본 발명의 반도체장치의 제조방법은, 칩과 미경화의 접착제층이 적층된 배선 기판을 가열하여, 상기 미경화의 접착제층을 경화시켜서 반도체장치를 제조하는 방법으로서, 상기 경화 전에, 상기 칩과 미경화의 접착제층이 적층된 배선 기판을 상압에 대해 0.05 MPa 이상의 정압(靜壓)에 의해 가압하는 정압 가압 공정을 포함하는 것을 특징으로 한다. 상기 반도체장치의 제조방법은, 기판 디자인에 의존하지 않고 간편하게 보이드를 소멸할 수 있고, 또한, 이때 접착제의 말려 올라감도 발생하지 않는다.

公开(公告)号：KR101235532B1

公开(公告)日：2013-02-21

申请号：KR1020087019439

申请日：2007-02-08

申请人： 데쿠세리아루즈 가부시키가이샤

发明人： 마쯔무라다까시

IPC分类号： H01L21/60

CPC分类号： H05K3/303 ,  B30B5/02 ,  B30B15/024 ,  B30B15/065 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32157 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/753 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/75756 ,  H01L2224/7598 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/8323 ,  H01L2224/83855 ,  H01L2224/83868 ,  H01L2224/8388 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H05K2201/0133 ,  H05K2203/0191 ,  H05K2203/0278 ,  H05K2203/1572 ,  Y02P70/613 ,  Y10T156/1089 ,  H01L2924/0635 ,  H01L2924/069 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/0401

摘要： 기판의 양면에 전기 부품을 실장 가능한 압착 장치를 제공한다. 본 발명의 압착 장치(1)는 제1, 제2 압박 고무(15, 25)를 갖고 있고, 제1, 제2 압박 고무(15, 25) 사이에 기판(31)을 끼워 넣음으로써, 기판(31)의 표면과 이면에 전기 부품(32, 33)을 동시에 실장할 수 있다. 제1, 제2 압박 고무(15, 25)는 제1 댐 부재(16)에 의해 수평 방향의 확대가 방지되므로, 전기 부품(32, 33)에 수평 방향으로 작용하는 힘이 가해지지 않는다. 따라서, 전기 부품(32, 33)은 위치 어긋남 없이 기판(31)에 접속되므로, 신뢰성이 높은 전기 장치(30a)를 얻을 수 있다.
압착 장치, 보호 필름, 압박판, 압박 고무, 댐 부재, 접착 필름

公开(公告)号：KR101181140B1

公开(公告)日：2012-09-14

申请号：KR1020077020987

申请日：2006-03-16

申请人： 파나소닉 주식회사

发明人： 가라시마세이지 ,  기타에다카시 ,  나카타니세이이치

IPC分类号： H01L21/60

CPC分类号： H01L24/83 ,  H01L21/563 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/13339 ,  H01L2224/13347 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/165 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/83047 ,  H01L2224/83091 ,  H01L2224/83097 ,  H01L2224/83192 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83886 ,  H01L2224/83887 ,  H01L2225/06513 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/1579 ,  H01L2924/30105 ,  H01L2924/381 ,  H05K3/323 ,  H05K2201/10674 ,  H05K2203/087 ,  Y10T156/1744 ,  H01L2924/00011 ,  H01L2924/066 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/00014

摘要： A flip chip mounting method which is applicable to the flip chip mounting of a next-generation LSI and high in productivity and reliability as well as a method for connecting substrates are provided. A circuit board 10 having a plurality of connecting terminals 11 and a semiconductor chip 20 having a plurality of electrode terminals 21 are disposed in mutually facing relation and a resin 13 containing conductive particles 12 and a gas bubble generating agent is supplied into the space therebetween. In this state, the resin 13 is heated to generate gas bubbles 30 from the gas bubble generating agent contained in the resin 13. The resin 13 is pushed toward the outside of the generated gas bubbles 30 by the growth thereof. The resin 13 pushed to the outside is self-assembled in the form of columns between the respective terminals of the circuit board 10 and the semiconductor chip 20. In this state, by pressing the semiconductor chip 20 against the circuit board 10, the conductive particles 12 contained in the resin 13 self-assembled between the facing terminals are brought into contact with each other to provide electrical connection between the terminals.

公开(公告)号：KR101175482B1

公开(公告)日：2012-08-20

申请号：KR1020077024118

申请日：2006-03-16

申请人： 파나소닉 주식회사

发明人： 기타에다카시 ,  나카타니세이이치 ,  가라시마세이지 ,  야마시타요시히사 ,  이치류다카시

IPC分类号： H01L21/60 ,  H01L23/12

CPC分类号： H01L24/16 ,  H01L21/4853 ,  H01L21/563 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11001 ,  H01L2224/11003 ,  H01L2224/1141 ,  H01L2224/11502 ,  H01L2224/11522 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/165 ,  H01L2224/2741 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29299 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29316 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/83886 ,  H01L2224/83887 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1579 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K3/323 ,  H05K3/3436 ,  H05K3/3484 ,  H05K2201/10977 ,  H05K2203/0264 ,  H05K2203/087 ,  H05K2203/1178 ,  Y02P70/613 ,  H01L2924/01031 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/066 ,  H01L2924/06 ,  H01L2924/0675 ,  H01L2924/0695 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： 제1 전자부품(2) 상에땜납분말(5a)과수지(4)를포함하는땜납수지조성물(6)을탑재하고, 제1 전자부품(2)의접속단자(3)와제2 전자부품(8)의전극단자(7)가대향하도록배치하고, 제1 전자부품(2)과땜납수지조성물을가열하여제1 전자부품(2)에포함되는가스발생원(1)으로부터가스를분출시키고, 가스(9a)를땜납수지조성물(6) 중에서대류시킴으로써, 땜납분말(5a)을땜납수지조성물(6) 중에서유동시키고, 접속단자(3) 및전극단자(7) 상에자기집합시켜접속단자(3)와전극단자(7)를전기적으로접속시킨다. 이로인해, 협(狹)피치로배선된반도체칩의전극단자와회로기판의접속단자를높은접속신뢰성으로접속할수 있는플립칩 실장방법과회로기판상에실장하기위한범프형성방법을제공한다.

摘要翻译： 包括焊料粉5a和树脂4的焊料树脂组合物6被安装在第一电子部件2和第一电子部件2的连接端子3上，并且第二电子部件 第一电子部件2和焊料树脂组合物被加热以从包含在第一电子部件2中的气体发生源1喷出气体， 使焊料粉5a在焊料树脂组合物6中流动，并通过焊料树脂组合物6中的焊料粉组合物9a的对流而在连接端子3和电极端子7上自组装， ）终端电极端子（7）。 提供了一种倒装芯片安装方法，用于以较小的间距连接半导体芯片的电极端子和电路板的连接端子，并具有高连接可靠性，以及一种用于安装在电路板上的凸块形成方法。

公开(公告)号：KR101010418B1

公开(公告)日：2011-01-21

申请号：KR1020097017947

申请日：2008-01-28

申请人： 닛토덴코 가부시키가이샤

发明人： 아마노,야스히로 ,  미스미,사다히또 ,  마쯔무라,다께시

IPC分类号： C09J7/02 ,  C09J163/00 ,  H01L21/52 ,  H01L21/78

CPC分类号： H01L23/3121 ,  C08G18/4045 ,  C08G18/6254 ,  C08L33/08 ,  C09J175/04 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06572 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10T428/24355 ,  H01L2924/00014 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A dicing die-bonding film in which the adhesive properties during the dicing step and the peeling properties during the pickup step are controlled so that both become good, and a production method thereof, are provided. The dicing die-bonding film in the present invention is a dicing die-bonding film having a pressure-sensitive adhesive layer on a base material and a die bond layer on the pressure-sensitive adhesive layer, in which the arithmetic mean roughness X (μm) on the pressure-sensitive adhesive layer side in the die bond layer is 0.015 μm to 1 μm, the arithmetic mean roughness Y (μm) on the die bond layer side in the pressure-sensitive adhesive layer is 0.03 μm to 1 μm, and the absolute value of the difference of the X and Y is 0.015 or more.

公开(公告)号：KR1020090126251A

公开(公告)日：2009-12-08

申请号：KR1020097017947

申请日：2008-01-28

申请人： 닛토덴코 가부시키가이샤

发明人： 아마노,야스히로 ,  미스미,사다히또 ,  마쯔무라,다께시

IPC分类号： C09J7/02 ,  C09J163/00 ,  H01L21/52 ,  H01L21/78

CPC分类号： H01L23/3121 ,  C08G18/4045 ,  C08G18/6254 ,  C08L33/08 ,  C09J175/04 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06572 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10T428/24355 ,  H01L2924/00014 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  C09J7/20 ,  C09J133/08 ,  C09J2203/326

摘要： Provided is a dicing/die bonding film which is controlled to have both excellent adhesiveness in dicing step and an excellent removal characteristic in a pickup step. A method for manufacturing such dicing/die bonding film is also provided. The dicing/die bonding film has an adhesive layer on a base material, and a die bonding layer on the adhesive layer. The arithmetic average roughness X (μm) of the die bonding layer on the adhesive layer side is 0.015μm-1μm, and the arithmetic average roughness Y (μm) of the adhesive layer on the die bonding layer side is 0.03μm-1μm, and the absolute value of a difference between the values X and Y is 0.015 or more.

摘要翻译： 提供了一种切割/芯片接合膜，其被控制为在切割步骤中具有优异的粘附性和在拾取步骤中具有优异的去除特性。 还提供了一种制造这种切割/芯片接合薄膜的方法。 切割/芯片接合膜在基材上具有粘合剂层，并且在粘合剂层上具有芯片接合层。 粘合剂层侧的芯片接合层的算术平均粗糙度X（μm）为0.015μm〜1μm，芯片接合层侧的粘合剂层的算术平均粗糙度Y（μm）为0.03μm〜1μm， 值X和Y之间的差的绝对值为0.015以上。

公开(公告)号：KR1020090055267A

公开(公告)日：2009-06-02

申请号：KR1020070122101

申请日：2007-11-28

申请人： 제일모직주식회사

发明人： 최한님 ,  송기태 ,  황치석 ,  김혜경 ,  정창범

IPC分类号： C09J7/00 ,  C09J9/00

CPC分类号： H01L24/27 ,  C08L2666/14 ,  C09J7/20 ,  C09J133/062 ,  C09J163/00 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/29388 ,  H01L2224/29393 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/181 ,  Y10T428/2848 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/05032 ,  H01L2924/05442 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： An adhesive composition is provided to minimize the generation of gap or void generated form the interface in bonding an adhesive film for die bonding and a semiconductor wafer and to form a film by increasing tensile strength of the film. An adhesive composition for semiconductor assembly comprises a binder part, a hardened part and solvent. The solvent is a binary mixed solvent consisting of low-boiling-point solvent of 40-100 °C and high-boiling-point solvent of 140-200 °C. The binder part is an acrylic polymer, an NCO-added polymer or an epoxy-added polymer. The hardened part is epoxy resin, phenol type hardened resin, urethane resin, silicon resin, polyester resin, amine-based hardened resin, melanin hardened resin, urea hardened resin or acid anhydride-based hardened resin.

摘要翻译： 提供粘合剂组合物以最小化在粘合用于芯片接合的粘合剂膜和半导体晶片时从界面产生的间隙或空隙的产生，并且通过增加膜的拉伸强度来形成膜。 用于半导体组件的粘合剂组合物包括粘合剂部分，硬化部分和溶剂。 溶剂是由40-100℃的低沸点溶剂和140-200℃的高沸点溶剂组成的二元混合溶剂。 粘合剂部分是丙烯酸聚合物，加入NCO的聚合物或加入环氧树脂的聚合物。 硬化部分是环氧树脂，苯酚型硬化树脂，聚氨酯树脂，硅树脂，聚酯树脂，胺类硬化树脂，黑色素硬化树脂，尿素硬化树脂或酸酐类硬化树脂。

公开(公告)号：KR1020090053954A

公开(公告)日：2009-05-28

申请号：KR1020097007517

申请日：2007-08-07

申请人： 린텍 가부시키가이샤

发明人： 야마자키오사무 ,  이치카와이사오 ,  사이키나오야

IPC分类号： H01L21/58 ,  H01L21/52 ,  H01L21/60

CPC分类号： H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/31 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/16 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/0715 ,  H01L2924/0675 ,  H01L2924/069 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： In a process for manufacturing a semiconductor device comprising heating a wiring board on which a chip and an uncured adhesive layer are laminated for curing the adhesive layer, the improvement includes performing a statically pressurizing step before the adhesive layer is cured, in which step the wiring board on which the chip and the uncured adhesive layer are laminated is subjected to a static pressure greater than atmospheric pressure by not less than 0.05 MPa. According to the invention, voids are easily eliminated irrespective of a design of the wiring board, and the adhesive is prevented from curling up on the chip.