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公开(公告)号:TW201733058A
公开(公告)日:2017-09-16
申请号:TW105127767
申请日:2016-08-30
Inventor: 李宗徽 , LEE, TZUNG-HUI , 郭宏瑞 , KUO, HUNG-JUI , 何明哲 , HO, MING-CHE , 黃子芸 , HUANG, TZU-YUN
IPC: H01L23/488
CPC classification number: H01L24/02 , H01L21/568 , H01L21/6835 , H01L23/544 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/19 , H01L24/20 , H01L2221/68318 , H01L2221/68359 , H01L2221/68381 , H01L2223/54426 , H01L2223/54453 , H01L2224/02315 , H01L2224/02331 , H01L2224/02373 , H01L2224/02379 , H01L2224/0401 , H01L2224/05024 , H01L2224/11015 , H01L2224/12105 , H01L2224/13026 , H01L2224/131 , H01L2224/14181 , H01L2224/16225 , H01L2224/16265 , H01L2924/014
Abstract: 一種重佈線路結構,電性連接於位於其下方的至少一導體。重佈線路結構包括一介電層、一對位標記及一重佈導電層。介電層覆蓋導體且包括用來暴露該導體的至少一接觸開口。對位標記配置在介電層上,對位標記包括位在介電層上的一基部及位在基部上的一凸出部,其中凸出部的一最大厚度與基部的一厚度的比值小於25%。重佈導電層配置在介電層上,重佈導電層包括一導通孔,且導通孔透過接觸開口電性連接至導體。本發明一實施例更提供一種重佈線路結構及整合扇出型封裝的製造方法。
Abstract in simplified Chinese: 一种重布线路结构,电性连接于位于其下方的至少一导体。重布线路结构包括一介电层、一对位标记及一重布导电层。介电层覆盖导体且包括用来暴露该导体的至少一接触开口。对位标记配置在介电层上,对位标记包括位在介电层上的一基部及位在基部上的一凸出部,其中凸出部的一最大厚度与基部的一厚度的比值小于25%。重布导电层配置在介电层上,重布导电层包括一导通孔,且导通孔透过接触开口电性连接至导体。本发明一实施例更提供一种重布线路结构及集成扇出型封装的制造方法。
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公开(公告)号:TWI419285B
公开(公告)日:2013-12-11
申请号:TW099137735
申请日:2010-11-03
Inventor: 鄭明達 , CHENG, MING DA , 呂文雄 , LU, WEN HSIUNG , 林志偉 , LIN, CHIH WEI , 陳靜雯 , CHEN, CHING WEN , 吳逸文 , WU, YI WEN , 張家棟 , CHANG, CHIA TUNG , 何明哲 , HO, MING CHE , 劉重希 , LIU, CHUNG SHI
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L2224/11 , H01L2924/01047 , H01L2924/01049 , H01L2924/014 , H01L2924/00012
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公开(公告)号:TW201320209A
公开(公告)日:2013-05-16
申请号:TW101112182
申请日:2012-04-06
Inventor: 吳逸文 , WU, YI WEN , 林正怡 , LIM, ZHENG-YI , 何明哲 , HO, MING CHE , 劉重希 , LIU, CHUNG SHI
CPC classification number: H01L23/291 , H01L23/293 , H01L23/3171 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02313 , H01L2224/02331 , H01L2224/02381 , H01L2224/0239 , H01L2224/03424 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05111 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/05583 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/08503 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16237 , H01L2224/16503 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/2064 , H01L2924/00 , H01L2224/05552
Abstract: 本發明提供一種半導體元件,其包括藉由浸鍍錫製程形成導電層於後保護層內連線(PPI)結構之上。高分子層形成於導電層之上且被圖案化形成開口,開口暴露導電層的一部份。焊料凸塊形成於高分子層的開口中,以電性連接到後保護層內連線(PPI)結構。
Abstract in simplified Chinese: 本发明提供一种半导体组件,其包括借由浸镀锡制程形成导电层于后保护层内连接(PPI)结构之上。高分子层形成于导电层之上且被图案化形成开口,开口暴露导电层的一部份。焊料凸块形成于高分子层的开口中,以电性连接到后保护层内连接(PPI)结构。
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公开(公告)号:TWI630695B
公开(公告)日:2018-07-21
申请号:TW105137576
申请日:2016-11-17
Inventor: 余振華 , YU, CHEN-HUA , 郭宏瑞 , KUO, HUNG-JUI , 何明哲 , HO, MING-CHE , 吳逸文 , WU, YI-WEN , 李宗徽 , LEE, TZUNG-HUI
IPC: H01L23/525 , H01L23/528 , H01L21/60
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公开(公告)号:TWI567900B
公开(公告)日:2017-01-21
申请号:TW101147091
申请日:2012-12-13
Inventor: 陳玉芬 , CHEN, YU FENG , 林俊宏 , LIN, CHUN HUNG , 普翰屏 , PU, HAN PING , 董志航 , TUNG, CHIH-HANG , 吳凱強 , WU, KAI CHIANG , 何明哲 , HO, MING CHE
IPC: H01L23/488
CPC classification number: H01L24/13 , H01L23/488 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05027 , H01L2224/05111 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05551 , H01L2224/05555 , H01L2224/05572 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10125 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13012 , H01L2224/13076 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16237 , H01L2224/16238 , H01L2224/81191 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
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公开(公告)号:TW201401399A
公开(公告)日:2014-01-01
申请号:TW102119545
申请日:2013-06-03
Inventor: 林正怡 , LIM, ZHENG-YI , 吳逸文 , WU, YI WEN , 楊宗翰 , YANG, TZONG HANN , 何明哲 , HO, MING CHE , 劉重希 , LIU, CHUNG SHI
IPC: H01L21/60
CPC classification number: H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00
Abstract: 一種方法,包括將一封裝元件之一第一電連接器對準一第二封裝元件之一第二電連接器。在第一電連接器對準第二連接器後,將一金屬層電鍍至第一及第二電連接器上。金屬層將第一電連接器與第二連接器接合。
Abstract in simplified Chinese: 一种方法,包括将一封装组件之一第一电连接器对准一第二封装组件之一第二电连接器。在第一电连接器对准第二连接器后,将一金属层电镀至第一及第二电连接器上。金属层将第一电连接器与第二连接器接合。
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公开(公告)号:TWI419279B
公开(公告)日:2013-12-11
申请号:TW099130986
申请日:2010-09-14
Inventor: 劉重希 , LIU, CHUNG SHI , 黃見翎 , HWANG, CHIEN LING , 何明哲 , HO, MING CHE
IPC: H01L23/482
CPC classification number: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1357 , H01L2224/13611 , H01L2224/16507 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2224/13099 , H01L2924/01083 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
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公开(公告)号:TWI410531B
公开(公告)日:2013-10-01
申请号:TW099114609
申请日:2010-05-07
Inventor: 張家棟 , CHANG, CHIA TUNG , 鄭明達 , CHENG, MING DA , 何明哲 , HO, MING CHE , 劉重希 , LIU, CHUNG SHI
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公开(公告)号:TW201332073A
公开(公告)日:2013-08-01
申请号:TW101147091
申请日:2012-12-13
Inventor: 陳玉芬 , CHEN, YU FENG , 林俊宏 , LIN, CHUN HUNG , 普翰屏 , PU, HAN PING , 董志航 , TUNG, CHIH-HANG , 吳凱強 , WU, KAI CHIANG , 何明哲 , HO, MING CHE
IPC: H01L23/488
CPC classification number: H01L24/13 , H01L23/488 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05027 , H01L2224/05111 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05551 , H01L2224/05555 , H01L2224/05572 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10125 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13012 , H01L2224/13076 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16237 , H01L2224/16238 , H01L2224/81191 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
Abstract: 本發明提供一種半導體裝置,包括一止裂物設置於一凸塊底層金屬層上,此凸塊底層金屬層為具有至少二開口之空心圓柱體。
Abstract in simplified Chinese: 本发明提供一种半导体设备,包括一止裂物设置于一凸块底层金属层上,此凸块底层金属层为具有至少二开口之空心圆柱体。
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公开(公告)号:TWI697085B
公开(公告)日:2020-06-21
申请号:TW107125093
申请日:2018-07-20
Inventor: 曾士豪 , TSENG, SHIH-HAO , 郭宏瑞 , KUO, HUNG-JUI , 何明哲 , HO, MING-CHE
IPC: H01L23/485 , H01L23/31
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