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1.射頻識別標籤及其製造方法(一) RFID TAG AND METHOD OF MANUFACTURING THE SAME 失效
简体标题: 射频识别标签及其制造方法(一) RFID TAG AND METHOD OF MANUFACTURING THE SAME公开(公告)号:TWI297125B
公开(公告)日:2008-05-21
申请号:TW094109083
申请日:2005-03-24
CPC分类号: H01L24/12 , G06K19/07749 , G06K19/0775 , H01L23/49855 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/10135 , H01L2224/10165 , H01L2224/1134 , H01L2224/131 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/2929 , H01L2224/293 , H01L2224/73203 , H01L2224/81136 , H01L2224/81139 , H01L2224/8114 , H01L2224/81191 , H01L2224/8159 , H01L2224/816 , H01L2224/81801 , H01L2224/81903 , H01L2224/83192 , H01L2224/83851 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , Y10T29/49018 , H01L2224/13099 , H01L2924/00012 , H01L2224/29075 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: 本發明係提供一以非接觸方式與一外部裝置交換資訊之射頻識別(RFID)標籤,其中使用一膏劑作為用於一天線之一材料,且其設計成可避免凸塊的沉降。一用於限制當電路晶片連接至一天線時由於一壓抵力造成一電路晶片的凸塊產生沉降之阻止器係在一與凸塊相鄰之位置處設置於電路晶片或一基底上。
简体摘要: 本发明系提供一以非接触方式与一外部设备交换信息之射频识别(RFID)标签,其中使用一膏剂作为用于一天线之一材料,且其设计成可避免凸块的沉降。一用于限制当电路芯片连接至一天线时由于一压抵力造成一电路芯片的凸块产生沉降之阻止器系在一与凸块相邻之位置处设置于电路芯片或一基底上。
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公开(公告)号:TWI582915B
公开(公告)日:2017-05-11
申请号:TW102113676
申请日:2013-04-17
发明人: 岸新 , KISHI, ARATA , 宗像宏典 , MUNAKATA, HIRONORI , 本村耕治 , MOTOMURA, KOJI , 圓尾弘樹 , MARUO, HIROKI
CPC分类号: H05K1/181 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/10156 , H01L2224/16238 , H01L2224/2929 , H01L2224/293 , H01L2224/32052 , H01L2224/32057 , H01L2224/32225 , H01L2224/73203 , H01L2224/81052 , H01L2224/81191 , H01L2224/8159 , H01L2224/81609 , H01L2224/81611 , H01L2224/81613 , H01L2224/81639 , H01L2224/81647 , H01L2224/81815 , H01L2224/81935 , H01L2224/81951 , H01L2224/81986 , H01L2224/83104 , H01L2224/83192 , H01L2224/9211 , H01L2224/92125 , H01L2924/00014 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/384 , H05K3/3436 , H05K3/3463 , H05K3/3484 , H05K2201/10734 , H05K2201/10977 , H05K2201/10992 , H05K2201/2009 , H05K2201/2036 , H05K2201/2045 , Y02P70/613 , H01L2924/00012 , H01L2924/00
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公开(公告)号:TWI532131B
公开(公告)日:2016-05-01
申请号:TW102148605
申请日:2013-12-27
发明人: 鄭世杰 , CHENG, SHIH JYE , 盧東寶 , LU, TUNG BAO
CPC分类号: H01L24/13 , H01L21/76898 , H01L23/3192 , H01L23/488 , H01L23/49541 , H01L23/49572 , H01L23/49816 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/742 , H01L24/81 , H01L25/0657 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/02379 , H01L2224/0239 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05005 , H01L2224/05022 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05548 , H01L2224/05572 , H01L2224/05639 , H01L2224/1132 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11849 , H01L2224/11901 , H01L2224/13005 , H01L2224/13025 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16238 , H01L2224/16245 , H01L2224/17181 , H01L2224/2919 , H01L2224/32225 , H01L2224/45144 , H01L2224/48639 , H01L2224/48839 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/81948 , H01L2224/83104 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00011 , H01L2924/12042 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/381 , H01L2924/01079 , H01L2924/00012 , H01L2924/01046 , H01L2924/206 , H01L2924/00014 , H01L2924/01074 , H01L2924/014 , H01L2924/0665 , H01L2924/013 , H01L2924/01047 , H01L2924/00 , H01L2924/01033 , H01L2224/1146
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公开(公告)号:TWI462204B
公开(公告)日:2014-11-21
申请号:TW102142573
申请日:2013-11-22
发明人: 鄭世杰 , CHENG, SHIH JYE , 盧東寶 , LU, TUNG BAO
IPC分类号: H01L21/60 , H01L21/288
CPC分类号: H01L21/4853 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/742 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/039 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05576 , H01L2224/05578 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/119 , H01L2224/11901 , H01L2224/11906 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81801 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/00014 , H01L2924/01074 , H01L2924/01079 , H01L2924/01046 , H01L2924/01082 , H01L2924/00012 , H01L2224/1182 , H01L2924/0665 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
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5.電子機器、電子零件、太陽能電池、太陽光發電裝置、發光二極體、發光裝置、照明裝置、號誌燈及液晶顯示器 有权
简体标题: 电子机器、电子零件、太阳能电池、太阳光发电设备、发光二极管、发光设备、照明设备、信号灯灯及液晶显示器公开(公告)号:TWI412303B
公开(公告)日:2013-10-11
申请号:TW100147025
申请日:2011-12-19
申请人: 納普拉有限公司 , NAPRA CO., LTD.
发明人: 關根重信 , SEKINE, SHIGENOBU , 關根由莉奈 , SEKINE, YURINA
IPC分类号: H05K1/05
CPC分类号: H05K1/097 , H01L23/49866 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L31/022425 , H01L31/0682 , H01L33/62 , H01L2224/16145 , H01L2224/16225 , H01L2224/2929 , H01L2224/293 , H01L2224/81191 , H01L2224/81193 , H01L2224/81395 , H01L2224/81903 , H01L2224/83191 , H01L2224/83192 , H01L2224/8359 , H01L2224/83605 , H01L2224/83609 , H01L2224/83611 , H01L2224/83613 , H01L2224/83618 , H01L2224/83624 , H01L2224/83639 , H01L2224/83644 , H01L2224/83647 , H01L2224/83655 , H01L2224/8366 , H01L2224/83666 , H01L2224/83669 , H01L2224/83701 , H01L2224/83799 , H01L2224/83815 , H01L2224/83825 , H01L2224/83851 , H01L2224/83886 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/00011 , H01L2924/01327 , H01L2924/12041 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H05K1/111 , H05K2201/0338 , H05K2201/099 , Y02E10/547 , Y02P70/611 , H01L2924/00 , H01L2224/8159 , H01L2924/00014 , H01L2224/81799 , H01L2924/00012 , H01L2224/81639 , H01L2224/81647 , H01L2224/81644 , H01L2224/81669 , H01L2224/81666 , H01L2224/81624 , H01L2224/81618 , H01L2224/8166 , H01L2224/81655 , H01L2224/81611 , H01L2224/81609 , H01L2224/81613 , H01L2224/81605 , H01L2224/29075
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6.射頻識別標籤及其製造方法(一) RFID TAG AND METHOD OF MANUFACTURING THE SAME 失效
简体标题: 射频识别标签及其制造方法(一) RFID TAG AND METHOD OF MANUFACTURING THE SAME公开(公告)号:TW200620124A
公开(公告)日:2006-06-16
申请号:TW094109083
申请日:2005-03-24
CPC分类号: H01L24/12 , G06K19/07749 , G06K19/0775 , H01L23/49855 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/10135 , H01L2224/10165 , H01L2224/1134 , H01L2224/131 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/2929 , H01L2224/293 , H01L2224/73203 , H01L2224/81136 , H01L2224/81139 , H01L2224/8114 , H01L2224/81191 , H01L2224/8159 , H01L2224/816 , H01L2224/81801 , H01L2224/81903 , H01L2224/83192 , H01L2224/83851 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , Y10T29/49018 , H01L2224/13099 , H01L2924/00012 , H01L2224/29075 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: 本發明係提供一以非接觸方式與一外部裝置交換資訊之射頻識別(RFID)標籤,其中使用一膏劑作為用於一天線之一材料,且其設計成可避免凸塊的沉降。一用於限制當電路晶片連接至一天線時由於一壓抵力造成一電路晶片的凸塊產生沉降之阻止器係在一與凸塊相鄰之位置處設置於電路晶片或一基底上。
简体摘要: 本发明系提供一以非接触方式与一外部设备交换信息之射频识别(RFID)标签,其中使用一膏剂作为用于一天线之一材料,且其设计成可避免凸块的沉降。一用于限制当电路芯片连接至一天线时由于一压抵力造成一电路芯片的凸块产生沉降之阻止器系在一与凸块相邻之位置处设置于电路芯片或一基底上。
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公开(公告)号:TW546808B
公开(公告)日:2003-08-11
申请号:TW091103583
申请日:2002-02-27
申请人: 億恒科技公司
IPC分类号: H01L
CPC分类号: H01L24/31 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/05573 , H01L2224/13016 , H01L2224/16237 , H01L2224/2919 , H01L2224/81136 , H01L2224/81141 , H01L2224/8159 , H01L2224/816 , H01L2224/81801 , H01L2224/81903 , H01L2224/83192 , H01L2224/8385 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/0781 , H01L2924/14 , H01L2224/29075 , H01L2224/05599
摘要: 本發明提供一種載體元件,其具有用於連接至一晶片之內部接觸區。在此實例中,本發明之重點在於內部接觸區具有用於容納導電性黏著劑之凹部。
简体摘要: 本发明提供一种载体组件,其具有用于连接至一芯片之内部接触区。在此实例中,本发明之重点在于内部接触区具有用于容纳导电性黏着剂之凹部。
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公开(公告)号:TW201523819A
公开(公告)日:2015-06-16
申请号:TW102148605
申请日:2013-12-27
发明人: 鄭世杰 , CHENG, SHIH JYE , 盧東寶 , LU, TUNG BAO
CPC分类号: H01L24/13 , H01L21/76898 , H01L23/3192 , H01L23/488 , H01L23/49541 , H01L23/49572 , H01L23/49816 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/742 , H01L24/81 , H01L25/0657 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/02379 , H01L2224/0239 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05005 , H01L2224/05022 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05548 , H01L2224/05572 , H01L2224/05639 , H01L2224/1132 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11849 , H01L2224/11901 , H01L2224/13005 , H01L2224/13025 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16238 , H01L2224/16245 , H01L2224/17181 , H01L2224/2919 , H01L2224/32225 , H01L2224/45144 , H01L2224/48639 , H01L2224/48839 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/81948 , H01L2224/83104 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00011 , H01L2924/12042 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/381 , H01L2924/01079 , H01L2924/00012 , H01L2924/01046 , H01L2924/206 , H01L2924/00014 , H01L2924/01074 , H01L2924/014 , H01L2924/0665 , H01L2924/013 , H01L2924/01047 , H01L2924/00 , H01L2924/01033 , H01L2224/1146
摘要: 一種半導體結構包括:一裝置;在該裝置上方之一導電襯墊;及安置在該導電襯墊上之一Ag1-xYx合金柱,其中該Ag1-xYx合金之Y包含以任意重量百分比與Ag形成完全固溶體之金屬,且其中該Ag1-xYx合金之X在約0.005至約0.25之範圍內。
简体摘要: 一种半导体结构包括:一设备;在该设备上方之一导电衬垫;及安置在该导电衬垫上之一Ag1-xYx合金柱,其中该Ag1-xYx合金之Y包含以任意重量百分比与Ag形成完全固溶体之金属,且其中该Ag1-xYx合金之X在约0.005至约0.25之范围内。
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公开(公告)号:TWI462243B
公开(公告)日:2014-11-21
申请号:TW102141593
申请日:2013-11-15
发明人: 鄭世杰 , CHENG, SHIH JYE , 盧東寶 , LU, TUNG BAO
CPC分类号: H01L21/4825 , H01L23/15 , H01L23/49816 , H01L23/4985 , H01L23/49866 , H01L23/49894 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11901 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/01079 , H01L2924/01046 , H01L2924/00014 , H01L2924/01074 , H01L2924/01082 , H01L2924/00012 , H01L2924/0665 , H01L2924/0655 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
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公开(公告)号:TW201444004A
公开(公告)日:2014-11-16
申请号:TW102142573
申请日:2013-11-22
发明人: 鄭世杰 , CHENG, SHIH JYE , 盧東寶 , LU, TUNG BAO
IPC分类号: H01L21/60 , H01L21/288
CPC分类号: H01L21/4853 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/742 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/039 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05576 , H01L2224/05578 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/119 , H01L2224/11901 , H01L2224/11906 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81801 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/00014 , H01L2924/01074 , H01L2924/01079 , H01L2924/01046 , H01L2924/01082 , H01L2924/00012 , H01L2224/1182 , H01L2924/0665 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
摘要: 本發明提供一種用於製造一半導體結構之方法。該方法包括:在一半導體晶粒上形成一導電襯墊;在該導電襯墊上方形成一晶種層;在該晶種層上方界定一第一遮罩層;及在該第一遮罩層中形成一銀合金凸塊本體。該在該第一遮罩層中形成一銀合金凸塊本體包括以下操作:製備一第一基於氰化物之電鍍浴;將該第一基於氰化物之電鍍浴之一pH值控制在約6至約8之一範圍內;將該半導體晶粒浸沒至該第一基於氰化物之電鍍浴中;及將約0.1 ASD至約0.5 ASD之一電鍍電流密度施加至該半導體晶粒。
简体摘要: 本发明提供一种用于制造一半导体结构之方法。该方法包括:在一半导体晶粒上形成一导电衬垫;在该导电衬垫上方形成一晶种层;在该晶种层上方界定一第一遮罩层;及在该第一遮罩层中形成一银合金凸块本体。该在该第一遮罩层中形成一银合金凸块本体包括以下操作:制备一第一基于氰化物之电镀浴;将该第一基于氰化物之电镀浴之一pH值控制在约6至约8之一范围内;将该半导体晶粒浸没至该第一基于氰化物之电镀浴中;及将约0.1 ASD至约0.5 ASD之一电镀电流密度施加至该半导体晶粒。
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