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    Low-K dielectric material
    4.
    发明授权
    Low-K dielectric material 有权
    低K电介质材料

    公开(公告)号：US07646081B2

    公开(公告)日：2010-01-12

    申请号：US10563801

    申请日：2004-07-08

    申请人： Juha T. Rantala

    发明人： Juha T. Rantala

    IPC分类号： H01L23/58

    CPC分类号： H01L21/31633 ,  C07B2200/11 ,  C07F7/1804 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02345

    摘要： Method for forming a low dielectric constant structure on a semiconductor substrate by CVD processing. The method comprises using a precursor containing chemical compound having the formula of (R1-R2)n-Si—(X1)4-n, wherein X1 is hydrogen, halogen, acyloxy, alkoxy or OH group, R2 is an optional group and comprises an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2 selected from an alkyl group having from 1 to 4 carbon atoms, an alkenyl group having from 2 to 5 carbon atoms, an alkynyl group having from 2 to 5 carbon atoms, Cl or F; n is an integer 1-3. The present precursors allow for a lowering of the electronic dielectric constant compared to conventional dielectric materials, such as silicon dioxide or phenyl modified organo-containing silicon dioxide.

    摘要翻译： 通过CVD处理在半导体衬底上形成低介电常数结构的方法。 该方法包括使用含有式（R1-R2）n-Si-（X1）4-n的化合物的前体，其中X 1是氢，卤素，酰氧基，烷氧基或OH基，R 2是任选的基团， 具有6个碳原子的芳族基团，R 1是选自具有1至4个碳原子的烷基，具有2至5个碳原子的烯基，具有2至5个碳原子的炔基的第4位的取代基 原子，Cl或F; n是整数1-3。 与常规电介质材料相比，本发明的前体允许降低电子介电常数，例如二氧化硅或苯基改性的含有机硅的二氧化硅。

    High silicon content siloxane polymers for integrated circuits
    6.
    发明申请
    High silicon content siloxane polymers for integrated circuits 有权
    高含硅硅氧烷聚合物用于集成电路

    公开(公告)号：US20080206578A1

    公开(公告)日：2008-08-28

    申请号：US12071500

    申请日：2008-02-21

    申请人： Juha T. Rantala ,  Thomas Gadda ,  Jyri Paulasaari

    发明人： Juha T. Rantala ,  Thomas Gadda ,  Jyri Paulasaari

    IPC分类号： B32B9/04 ,  C08G77/06

    CPC分类号： H01L21/3122 ,  C08G77/06 ,  C08G77/16 ,  C08G77/20 ,  C08G77/70 ,  C09D183/04 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02282 ,  Y10T428/31663

    摘要： Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.

    摘要翻译： 公开了适用于IC中的薄膜和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成高硅含量的膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。

    Stable organic-inorganic materials for waveguides, optical devices, and other applications
    7.
    发明授权
    Stable organic-inorganic materials for waveguides, optical devices, and other applications 有权
    用于波导，光学器件和其他应用的稳定的有机 - 无机材料

    公开(公告)号：US07280731B2

    公开(公告)日：2007-10-09

    申请号：US10190127

    申请日：2002-07-05

    申请人： Juha T. Rantala

    发明人： Juha T. Rantala

    IPC分类号： G02B6/10

    CPC分类号： G02B6/122 ,  G02B6/1221

    摘要： Waveguides having high stability are disclosed (and other devices and materials including but not limited to coatings, passivation materials, glob top materials, underfill materials, materials for IC and other applications, microlenses and any of a wide variety of optical devices) that benefit by being formed of a novel hybrid organic-inorganic material. In one embodiment of the invention, a method for making a waveguide includes: forming a lower cladding layer on a substrate; forming a core layer after the lower cladding layer; and forming an upper cladding layer after the core layer; wherein the lower cladding layer, core layer and/or upper cladding layer comprises a stable material with a relatively high glass transition temperature. Preferably the material is one that does not degrade or otherwise physically and/or chemically change upon further processing or when in use. Preferably the stable waveguide material of the invention can be heated in supercritical water vapor at 2 atm and at 120 C. for 2 hours without degradation (e.g. after which optical absorption, polarization dependent loss and/or refractive index change remains unchanged ±5%).

    摘要翻译： 公开了具有高稳定性的波导（以及其他装置和材料，包括但不限于涂层，钝化材料，球形顶材料，底部填充材料，用于IC和其它应用的材料，微透镜以及各种光学装置中的任何一种），其受益于 由新型杂化有机 - 无机材料形成。 在本发明的一个实施例中，制造波导的方法包括：在衬底上形成下包层; 在下包层之后形成芯层; 以及在所述芯层之后形成上包层; 其中下包层，芯层和/或上覆层包括具有较高玻璃化转变温度的稳定材料。 优选地，材料是在进一步加工或使用时不会降解或物理和/或化学变化的材料。 优选地，本发明的稳定波导材料可以在2大气压和120℃的超临界水蒸气中加热2小时而不降解（例如，在此之后光学吸收，偏振相关损耗和/或折射率变化保持不变±5％） 。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06974970B2

    公开(公告)日：2005-12-13

    申请号：US10346449

    申请日：2003-01-17

    申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

    发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

    IPC分类号： C08G77/24 ,  C08G77/58 ,  C09K13/00 ,  H01L20060101 ,  H01L21/312 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L35/24

    CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

    摘要翻译： 公开了适合作为IC中的电介质和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。 在一个实例中，包含组合物的薄膜通过水解具有至少一个含有不饱和碳 - 碳键的烃基的单体硅化合物和至少一个与化合物的硅原子连接的可水解基团来获得， 具有至少一个芳基的至少一个单体硅化合物和至少一个与化合物的硅原子连接以形成硅氧烷材料的可水解基团。

    Optical light diffuser component and a method for manufacturing the same
    9.
    发明申请
    Optical light diffuser component and a method for manufacturing the same 有权
    光学光扩散​​器部件及其制造方法

    公开(公告)号：US20110134533A1

    公开(公告)日：2011-06-09

    申请号：US13058537

    申请日：2009-08-11

    申请人： Mikael Broman ,  Graeme Gordon ,  Juha T. Rantala

    发明人： Mikael Broman ,  Graeme Gordon ,  Juha T. Rantala

    IPC分类号： G02B5/02 ,  B05D5/06

    CPC分类号： G02B5/0278 ,  G02B5/001 ,  G02B5/021 ,  G02B5/0252 ,  G02B5/1809 ,  G02B5/1847

    摘要： An optical light diffuser component and a method of producing the same. The component comprises at least one substrate material with an index of refraction of n1 and at least one optical coating on the substrate with having an index of refraction of n2. The indices n1 and n2 are different. The optical light diffuser component produces uniform and diffuse light pattern from spot like light source, such as LED lamp, in terms of high optical transmission. The optical transmission is better than 90% at the visible spectrum of the light.

    摘要翻译： 光学光扩散​​器部件及其制造方法。 该组件包括折射率为n1的至少一种衬底材料和具有n2折射率的衬底上的至少一个光学涂层。 索引n1和n2不同。 在光传输方面，光扩散器部件从点状光源（例如LED灯）产生均匀的漫射光图案。 在光的可见光谱下，光透射率优于90％。

    Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits
    10.
    发明申请
    Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits 审中-公开
    具有有机 - 无机介电材料的集成电路和用于形成这种集成电路的方法

    公开(公告)号：US20100215839A1

    公开(公告)日：2010-08-26

    申请号：US12588364

    申请日：2009-10-13

    申请人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

    发明人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

    IPC分类号： H05K3/00

    CPC分类号： H01L21/3121 ,  C07F7/0874 ,  C07F7/12 ,  C07F7/123 ,  C07F7/1804 ,  C07F7/1888 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/31133 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76825

    摘要： A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R1R2R4MR5, wherein R1, R2 and R4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1, R2 and R4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R5 is either an alkoxy group, OR3, or a halogen (X).

    摘要翻译： 公开了一种用于制造集成电路的方法，其包括将导电材料和混合有机无机介电材料的交替区域沉积在基底上，其中介电材料的区域通过水解多个前体而形成，以形成由 氧化硅主链并具有与主链结合的有机取代基，并将杂化有机无机材料沉积在基材上，去除所选区域中的杂化有机 - 无机材料，以及在选定区域中沉积导电材料，其中 前体是通式为R 1 R 2 R 3 SiR 4的化合物，其中R 1，R 2，R 3各自与Si结合，独立地为芳基，可交联基团或具有1-14个碳原子的烷基，其中R4为 选自烷氧基，酰氧基，-OH基或卤素。 还公开了一种在基材上形成杂化有机无机层的方法，包括：将通式（IV）的化合物与四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷和二氯硅烷选自下列的硅烷水解： ：R1R2R4MR5，其中R1，R2和R4独立地是芳基，烷基，烯基，环氧基或炔基，其中R1，R2和R4中的至少一个是完全或部分氟化的，其中M选自周期表的第14族 ，其中R 5为烷氧基，OR 3或卤素（X）。