公开(公告)号：US20140061589A1

公开(公告)日：2014-03-06

申请号：US14057204

申请日：2013-10-18

申请人： Ravi Pillarisetty ,  Been-Yin Jin ,  Benjamin Chu-Kung ,  Matthew V. Metz ,  Jack T. Kavalieros ,  Marko Radosavljevic ,  Roza Kotlyar ,  Willy Rachmady ,  Niloy Mukherjee ,  Gilbert Dewey ,  Robert S. Chau

发明人： Ravi Pillarisetty ,  Been-Yin Jin ,  Benjamin Chu-Kung ,  Matthew V. Metz ,  Jack T. Kavalieros ,  Marko Radosavljevic ,  Roza Kotlyar ,  Willy Rachmady ,  Niloy Mukherjee ,  Gilbert Dewey ,  Robert S. Chau

IPC分类号： H01L29/775

CPC分类号： H01L27/092 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/283 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/155 ,  H01L29/165 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66522 ,  H01L29/66553 ,  H01L29/775 ,  H01L29/7782

摘要： A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.

摘要翻译： 量子阱晶体管具有锗量子阱沟道区域。 含硅蚀刻停止层提供了靠近通道的栅电介质的容易放置。 III-V族阻挡层增加了通道的应变。 通道区域上方和下方的分级硅锗层提高性能。 多栅极电介质材料允许使用高k值栅极电介质。

公开(公告)号：US20110156005A1

公开(公告)日：2011-06-30

申请号：US12655468

申请日：2009-12-30

申请人： Ravi Pillarisetty ,  Been-Yih Jin ,  Benjamin Chu-Kung ,  Matthew V. Metz ,  Jack T. Kavalieros ,  Marko Radosavljevic ,  Roza Kotlyar ,  Willy Rachmady ,  Niloy Mukherjee ,  Gilbert Dewey ,  Robert S. Chau

发明人： Ravi Pillarisetty ,  Been-Yih Jin ,  Benjamin Chu-Kung ,  Matthew V. Metz ,  Jack T. Kavalieros ,  Marko Radosavljevic ,  Roza Kotlyar ,  Willy Rachmady ,  Niloy Mukherjee ,  Gilbert Dewey ,  Robert S. Chau

IPC分类号： H01L29/772

CPC分类号： H01L27/092 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/283 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/155 ,  H01L29/165 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66522 ,  H01L29/66553 ,  H01L29/775 ,  H01L29/7782

摘要： A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.

摘要翻译： 量子阱晶体管具有锗量子阱沟道区域。 含硅蚀刻停止层提供了靠近通道的栅电介质的容易放置。 III-V族阻挡层增加了通道的应变。 通道区域上方和下方的分级硅锗层提高性能。 多栅极电介质材料允许使用高k值栅极电介质。

公开(公告)号：US20220190135A1

公开(公告)日：2022-06-16

申请号：US17117337

申请日：2020-12-10

申请人： Roza Kotlyar ,  Stephanie A. Bojarski ,  Hubert C. George ,  Payam Amin ,  Patrick H. Keys ,  Ravi Pillarisetty ,  Roman Caudillo ,  Florian Luethi ,  James S. Clarke

发明人： Roza Kotlyar ,  Stephanie A. Bojarski ,  Hubert C. George ,  Payam Amin ,  Patrick H. Keys ,  Ravi Pillarisetty ,  Roman Caudillo ,  Florian Luethi ,  James S. Clarke

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/15 ,  G06N10/00

摘要： Disclosed herein are lateral gate material arrangements for quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; and a gate above the quantum well stack, wherein the gate includes a gate electrode, the gate electrode includes a first material proximate to side faces of the gate and a second material proximate to a center of the gate, and the first material has a different material composition than the second material.

公开(公告)号：US09583602B2

公开(公告)日：2017-02-28

申请号：US15209552

申请日：2016-07-13

申请人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, Jr. ,  Ian A. Young ,  Kelin J. Kuhn

发明人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, Jr. ,  Ian A. Young ,  Kelin J. Kuhn

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/739 ,  H01L29/16 ,  H01L29/161 ,  H01L29/06 ,  H01L29/24 ,  H01L29/267 ,  H01L27/092 ,  H01L29/04 ,  H01L29/10 ,  H01L29/165 ,  H01L29/20 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/66977 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

摘要翻译： 描述了用于CMOS架构的隧道场效应晶体管（TFET）和制造N型和P型TFET的方法。 例如，隧道场效应晶体管（TFET）包括设置在衬底上方的均质有源区。 同质结有源区包括其中具有未掺杂沟道区的松弛Ge或GeSn体。 同质结有源区还包括设置在放大的Ge或GeSn体中，在沟道区两侧的掺杂源极和漏极区。 TFET还包括设置在沟道区域之间的源极和漏极区域之间的栅极堆叠。 栅极堆叠包括栅极电介质部分和栅极电极部分。

公开(公告)号：US20160322480A1

公开(公告)日：2016-11-03

申请号：US15209552

申请日：2016-07-13

申请人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

发明人： Roza Kotlyar ,  Stephen M. Cea ,  Gilbert Dewey ,  Benjamin Chu-Kung ,  Uygar E. Avci ,  Rafael Rios ,  Anurag Chaudhry ,  Thomas D. Linton, JR. ,  Ian A. Young ,  Kelin J. Kuhn

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/165 ,  H01L27/092 ,  H01L29/161 ,  H01L29/10 ,  H01L29/20 ,  H01L29/04 ,  H01L29/786 ,  H01L29/423

CPC分类号： H01L29/66977 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/7842 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

摘要： Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region disposed above a substrate. The homojunction active region includes a relaxed Ge or GeSn body having an undoped channel region therein. The homojunction active region also includes doped source and drain regions disposed in the relaxed Ge or GeSn body, on either side of the channel region. The TFET also includes a gate stack disposed on the channel region, between the source and drain regions. The gate stack includes a gate dielectric portion and gate electrode portion.

公开(公告)号：US20140027816A1

公开(公告)日：2014-01-30

申请号：US13560474

申请日：2012-07-27

申请人： Stephen M. Cea ,  Anand S. Murthy ,  Glenn A. Glass ,  Daniel B. Aubertine ,  Tahir Ghani ,  Jack T. Kavalieros ,  Roza Kotlyar

发明人： Stephen M. Cea ,  Anand S. Murthy ,  Glenn A. Glass ,  Daniel B. Aubertine ,  Tahir Ghani ,  Jack T. Kavalieros ,  Roza Kotlyar

IPC分类号： H01L29/78 ,  H01L29/165

CPC分类号： H01L29/1054 ,  H01L21/76224 ,  H01L29/06 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/7851

摘要： Techniques are disclosed for incorporating high mobility strained channels into fin-based transistors (e.g., FinFETs such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, silicon germanium (SiGe) is cladded onto silicon fins to provide a desired stress, although other fin and cladding materials can be used. The techniques are compatible with typical process flows, and the cladding deposition can occur at a plurality of locations within the process flow. In some cases, the built-in stress from the cladding layer may be enhanced with a source/drain stressor that compresses both the fin and cladding layers in the channel. In some cases, an optional capping layer can be provided to improve the gate dielectric/semiconductor interface. In one such embodiment, silicon is provided over a SiGe cladding layer to improve the gate dielectric/semiconductor interface.

摘要翻译： 公开了用于将高迁移率应变通道结合到鳍状晶体管（例如，诸如双栅极，三相等等的FinFET）中的技术，其中应力材料被包覆到鳍的沟道区域上。 在一个示例性实施例中，硅锗（SiGe）被包覆到硅散热片上以提供期望的应力，尽管可以使用其它鳍和包层材料。 这些技术与典型的工艺流程兼容，并且包层沉积可以发生在工艺流程内的多个位置处。 在一些情况下，来自包覆层的内置应力可以通过压缩通道中的鳍和覆层的源极/漏极应力来增强。 在一些情况下，可以提供可选的封盖层以改善栅极电介质/半导体界面。 在一个这样的实施例中，硅被提供在SiGe包覆层上以改善栅极电介质/半导体界面。

公开(公告)号：US20120153387A1

公开(公告)日：2012-06-21

申请号：US12975278

申请日：2010-12-21

申请人： Anand S. Murthy ,  Glenn A. Glass ,  Tahir Ghani ,  Ravi Pillarisetty ,  Niloy Mukherjee ,  Jack T. Kavalieros ,  Roza Kotlyar ,  Willy Rachmady ,  Mark Y. Liu

发明人： Anand S. Murthy ,  Glenn A. Glass ,  Tahir Ghani ,  Ravi Pillarisetty ,  Niloy Mukherjee ,  Jack T. Kavalieros ,  Roza Kotlyar ,  Willy Rachmady ,  Mark Y. Liu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0676 ,  H01L21/02532 ,  H01L21/28512 ,  H01L21/28525 ,  H01L21/3215 ,  H01L21/76831 ,  H01L23/535 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66681 ,  H01L29/66931 ,  H01L29/7785 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7833 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

摘要： Techniques are disclosed for forming transistor devices having source and drain regions with high concentrations of boron doped germanium. In some embodiments, an in situ boron doped germanium, or alternatively, boron doped silicon germanium capped with a heavily boron doped germanium layer, are provided using selective epitaxial deposition in the source and drain regions and their corresponding tip regions. In some such cases, germanium concentration can be, for example, in excess of 50 atomic % and up to 100 atomic %, and the boron concentration can be, for instance, in excess of 1E20 cm−3. A buffer providing graded germanium and/or boron concentrations can be used to better interface disparate layers. The concentration of boron doped in the germanium at the epi-metal interface effectively lowers parasitic resistance without degrading tip abruptness. The techniques can be embodied, for instance, in planar or non-planar transistor devices.

摘要翻译： 公开了用于形成具有高掺杂硼掺杂锗的源区和漏区的晶体管器件的技术。 在一些实施例中，使用在源极和漏极区域及其对应的尖端区域中的选择性外延沉积来提供原位硼掺杂锗或者掺杂有硼掺杂锗层的硼掺杂硅锗。 在一些这样的情况下，锗浓度可以例如超过50原子％且高达100原子％，并且硼浓度可以例如超过1E20cm-3。 可以使用提供梯度锗和/或硼浓度的缓冲液来更好地接合不同的层。 锗在外延金属界面掺杂的硼的浓度有效地降低了寄生电阻而不降低尖端突然性。 这些技术可以例如在平面或非平面晶体管器件中实现。

公开(公告)号：US20060226453A1

公开(公告)日：2006-10-12

申请号：US11105215

申请日：2005-04-12

申请人： Everett Wang ,  Martin Giles ,  Philippe Matagne ,  Roza Kotlyar ,  Borna Obradovic ,  Mark Stettler

发明人： Everett Wang ,  Martin Giles ,  Philippe Matagne ,  Roza Kotlyar ,  Borna Obradovic ,  Mark Stettler

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/045 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a gate structure disposed on a substrate comprising at least one recess, wherein a channel region is in a direction, and then forming a compressive layer in the at least one recess.

摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例包括提供设置在包括至少一个凹部的基底上的栅极结构，其中沟道区在<110>方向上，然后在该至少一个凹部中形成压缩层。

公开(公告)号：US20180226509A1

公开(公告)日：2018-08-09

申请号：US15747925

申请日：2015-07-31

申请人： Elijah V. Karpov ,  Prashant Majhi ,  Roza Kotlyar ,  Niloy Mukherjee ,  Charles C. Kuo ,  Uday Shah ,  Ravi Pillarisetty ,  Robert S. Chau

发明人： Elijah V. Karpov ,  Prashant Majhi ,  Roza Kotlyar ,  Niloy Mukherjee ,  Charles C. Kuo ,  Uday Shah ,  Ravi Pillarisetty ,  Robert S. Chau

IPC分类号： H01L29/786 ,  H01L27/07 ,  H01L27/12 ,  H01L29/49 ,  H01L29/02

CPC分类号： H01L29/7869 ,  H01L27/0705 ,  H01L27/1225 ,  H01L27/2436 ,  H01L29/02 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78642 ,  H01L45/04 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： A microelectronic device having a functional metal oxide channel may be fabricated on a microelectronic substrate that can be utilized in very large scale integration, such as a silicon substrate, by forming a buffer transition layer between the microelectronic substrate and the functional metal oxide channel. In one embodiment, the microelectronic device may be a microelectronic transistor with a source structure and a drain structure formed on the buffer transition layer, wherein the source structure and the drain structure abut opposing sides of the functional metal oxide channel and a gate dielectric is disposed between a gate electrode and the functional metal oxide channel. In another embodiment, the microelectronic device may be a two-terminal microelectronic device.

公开(公告)号：US20160276347A1

公开(公告)日：2016-09-22

申请号：US15024347

申请日：2013-12-16

申请人： Stephen M. CEA ,  Roza KOTLYAR ,  Harold W. KENNEL ,  Kelin J. KUHN ,  Tahir GHANI

发明人： STEPHEN M CEA ,  ROZA KOTLYAR ,  HAROLD W KENNEL ,  KELIN J KUHN ,  TAHIR GHANI

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/78

CPC分类号： H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/785

摘要： Techniques and methods related to dual strained cladding layers for semiconductor devices, and systems incorporating such semiconductor devices.

摘要翻译： 与用于半导体器件的双应变包覆层有关的技术和方法以及包含这种半导体器件的系统。